JP6751079B2 - 補正光学変数を求める方法及び装置 - Google Patents

補正光学変数を求める方法及び装置 Download PDF

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JP6751079B2
JP6751079B2 JP2017512438A JP2017512438A JP6751079B2 JP 6751079 B2 JP6751079 B2 JP 6751079B2 JP 2017512438 A JP2017512438 A JP 2017512438A JP 2017512438 A JP2017512438 A JP 2017512438A JP 6751079 B2 JP6751079 B2 JP 6751079B2
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function
correction
measurement
matrix
sensor
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JP2017524946A5 (enExample
JP2017524946A (ja
Inventor
ペトリ クリストフ
ペトリ クリストフ
ヴァルト クリスティアン
ヴァルト クリスティアン
ルンデ ダニエル
ルンデ ダニエル
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Studio Devices (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2017512438A 2014-05-16 2015-05-15 補正光学変数を求める方法及び装置 Active JP6751079B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014209348.1 2014-05-16
DE102014209348.1A DE102014209348A1 (de) 2014-05-16 2014-05-16 Ermittlung einer korrigierten Größe
PCT/EP2015/060770 WO2015173397A1 (de) 2014-05-16 2015-05-15 Ermittlung einer korrigierten grösse

Publications (3)

Publication Number Publication Date
JP2017524946A JP2017524946A (ja) 2017-08-31
JP2017524946A5 JP2017524946A5 (enExample) 2018-06-28
JP6751079B2 true JP6751079B2 (ja) 2020-09-02

Family

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JP2017512438A Active JP6751079B2 (ja) 2014-05-16 2015-05-15 補正光学変数を求める方法及び装置

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US (1) US9841685B2 (enExample)
JP (1) JP6751079B2 (enExample)
DE (1) DE102014209348A1 (enExample)
WO (1) WO2015173397A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3570110A1 (en) 2018-05-16 2019-11-20 ASML Netherlands B.V. Estimating a parameter of a substrate
EP3696605A1 (en) * 2019-02-13 2020-08-19 ASML Netherlands B.V. Method and lithograph apparatus for measuring a radiation beam
CN116710847A (zh) * 2021-01-19 2023-09-05 卡尔蔡司Smt有限责任公司 设置投射曝光系统的方法、投射曝光方法以及用于微光刻的投射曝光系统
US11609506B2 (en) * 2021-04-21 2023-03-21 Kla Corporation System and method for lateral shearing interferometry in an inspection tool
DE102023120807A1 (de) * 2023-08-04 2025-02-06 Asml Netherlands B.V. Verfahren und System zur Bestimmung feldabhängiger Aberrationen

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW550377B (en) * 2000-02-23 2003-09-01 Zeiss Stiftung Apparatus for wave-front detection
US7088458B1 (en) * 2002-12-23 2006-08-08 Carl Zeiss Smt Ag Apparatus and method for measuring an optical imaging system, and detector unit
JP4753009B2 (ja) * 2005-05-24 2011-08-17 株式会社ニコン 計測方法、露光方法、及び露光装置
US7580113B2 (en) * 2006-06-23 2009-08-25 Asml Netherlands B.V. Method of reducing a wave front aberration, and computer program product
JP2008186912A (ja) * 2007-01-29 2008-08-14 Nikon Corp 収差評価方法、調整方法、露光装置、露光方法、およびデバイス製造方法
JP5503193B2 (ja) * 2009-06-08 2014-05-28 キヤノン株式会社 波面収差の測定装置、露光装置及びデバイス製造方法
DE102009038558A1 (de) * 2009-08-24 2011-03-10 Carl Zeiss Sms Gmbh Verfahren zur Emulation eines fotolithographischen Prozesses und Maskeninspektionsmikroskop zur Durchführung des Verfahrens
KR101336399B1 (ko) * 2009-11-19 2013-12-04 캐논 가부시끼가이샤 계측 장치, 가공 방법 및 컴퓨터 판독가능한 저장 매체
DE102010062763A1 (de) * 2010-12-09 2012-06-14 Carl Zeiss Smt Gmbh Verfahren zum Vermessen eines optischen Systems
KR101529807B1 (ko) * 2011-01-20 2015-06-17 칼 짜이스 에스엠티 게엠베하 투영 노광 도구를 조작하는 방법
WO2013078638A1 (zh) * 2011-11-30 2013-06-06 中国科学院长春光学精密机械与物理研究所 检测光刻机投影物镜系统的波像差的装置及方法
DE102012202057B4 (de) * 2012-02-10 2021-07-08 Carl Zeiss Smt Gmbh Projektionsobjektiv für EUV-Mikrolithographie, Folienelement und Verfahren zur Herstellung eines Projektionsobjektivs mit Folienelement
DE102012111008B4 (de) * 2012-11-15 2014-05-22 Precitec Optronik Gmbh Optisches Messverfahren und optische Messvorrichtung zum Erfassen einer Oberflächentopographie
DE102013218991A1 (de) * 2013-09-20 2015-03-26 Carl Zeiss Smt Gmbh Vorrichtung zum Bestimmen einer optischen Eigenschaft eines optischen Abbildungssystems

Also Published As

Publication number Publication date
US20170068166A1 (en) 2017-03-09
US9841685B2 (en) 2017-12-12
DE102014209348A1 (de) 2015-11-19
WO2015173397A1 (de) 2015-11-19
JP2017524946A (ja) 2017-08-31

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