JP2017522731A - キャリアおよびキャリアを製造する方法 - Google Patents
キャリアおよびキャリアを製造する方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 229910000679 solder Inorganic materials 0.000 claims abstract description 114
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 6
- 230000000903 blocking effect Effects 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000000969 carrier Substances 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 12
- 230000008901 benefit Effects 0.000 description 6
- 238000005476 soldering Methods 0.000 description 5
- 238000007689 inspection Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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Abstract
Description
2 コンタクト領域
3 はんだパッド
4 はんだ阻止構造
5 第1領域部
6 第2領域部
7 連結部
8 表面
9 層
10 距離
11 部品
12 はんだ材料
13 側面
14 電気回路
Claims (14)
- 電気部品用、特に半導体レーザー用のキャリアであって、
表面(8)を有する基板(1)を備えており、
導電性コンタクト領域(2)は、前記基板(1)の前記表面(8)上に配置されており、 はんだパッド(3)は、前記コンタクト領域(2)上に配置されており、
はんだ阻止構造(4)は、前記はんだパッド(3)の側方に隣り合って設けられており、
前記はんだ阻止構造(4)は、前記コンタクト領域(2)と比べて液体はんだによる濡れをより困難にするように構成されており、
前記はんだ阻止構造(4)は、前記コンタクト領域(2)を前記はんだパッド(3)を有する第1領域部(5)と、第2領域部(6)とに細分しており、
前記はんだ阻止構造(4)は、前記コンタクト領域(2)の自由連結部(7)を残すように前記コンタクト領域(2)の全長の一部のみにわたって延在しており、
前記第1および第2領域部(5、6)は、前記連結部(7)によって相互に接続されている、キャリア。 - 前記はんだ阻止構造(4)は、前記コンタクト領域上に配置されている少なくとも1つの層(9)を備えている、
請求項1に記載のキャリア。 - 前記はんだ阻止構造(4)は、前記コンタクト領域(2)で覆われていない前記基板(1)の前記表面(8)の一部によって形成されており、
前記領域部(5,6)は、前記連結部(7)によって接続され一体に形成されている、 請求項1に記載のキャリア。 - 前記はんだ阻止構造(4)は、ケイ素、窒化ケイ素、または酸化ケイ素を含む、
請求項2または請求項3に記載のキャリア。 - 前記電気部品(11)は、前記第1領域部(5)上に配置されており、
前記電気部品(11)は、前記はんだパッド(3)によって機械的に前記コンタクト領域に接合されており、
前記はんだ阻止構造(4)は、前記部品(11)の側面(13)に沿った方向に配置されている、
請求項1から請求項4のいずれか一項に記載のキャリア。 - 前記連結部(7)は、前記部品(11)の前記側面(13)に配置されており、
はんだ材料(12)は、少なくとも前記連結部(7)上および前記第1領域部(5)上に配置されており、
はんだ材料は、前記第2領域部(6)の副領域上、特に前記連結部(7)に隣接して配置されている、
請求項1から請求項5のいずれか一項に記載のキャリア。 - 前記部品(11)は、側面(13)において前記はんだ阻止構造(4)に隣接しており、
前記部品(11)は、前記側面(13)において前記連結部(7)に隣接しており、
はんだ材料(12)は、側方に前記部品(11)を超えて前記連結部(7)領域に延在して少なくとも前記連結部(7)に配置されている、
請求項5または請求項6に記載のキャリア。 - 前記部品(11)は、オプロエレクトロニクス部品、特に半導体レーザー、発光ダイオード、またはパワー半導体として構成されている、
請求項5から請求項7のいずれか一項に記載のキャリア。 - 電気部品用、特に半導体レーザー用キャリアを製造する方法であって、
導電性コンタクト領域が基板の表面上に作製され、
はんだパッドが前記コンタクト領域上に設置され、
はんだ阻止構造が前記はんだパッドの側方に隣り合って形成され、
前記はんだ阻止構造は、前記コンタクト領域と比べて液体はんだによる濡れをより困難にするように構成され、
前記はんだ阻止構造は、前記コンタクト領域を前記はんだパッドを有する第1領域部と、第2領域部とに細分するように形成され、
前記はんだ阻止構造は、前記コンタクト領域に自由連結部を残すように前記コンタクト領域の全長の一部のみにわたって延在し、前記第1および第2領域部は、前記連結部によって相互に接続される、方法。 - 前記はんだ阻止構造は、前記コンタクト領域上に層の形態で設置される、
請求項9に記載の方法。 - 前記はんだ阻止構造は、前記コンタクト領域で覆われていない前記基板の前記表面の一部によって形成されるように前記コンタクト領域が前記基板上に設置される、
請求項9または請求項10に記載の方法。 - 電気部品が側面において前記はんだ阻止構造に沿った方向に配置されるように、前記部品が前記はんだパッド上に配置され、
前記電気部品は、前記はんだパッドによって機械的に前記コンタクト領域に接合され、 前記連結部は、前記部品の前記側面に配置され、前記部品の前記はんだパッドへの接合時にはんだ材料が少なくとも前記連結部に流出する、
請求項9から請求項11のいずれか一項に記載の方法。 - 前記部品の前記はんだパッドへの接合時に、はんだ材料が前記第2領域部の副領域に流出する、
請求項12に記載の方法。 - オプロエレクトロニクス部品、特に半導体レーザー、特に発光ダイオード、またはパワー半導体が電気部品として設置される、
請求項9から請求項13のいずれか一項に記載の方法。
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DE102014110473.0A DE102014110473A1 (de) | 2014-07-24 | 2014-07-24 | Träger für ein elektrisches Bauelement |
DE102014110473.0 | 2014-07-24 | ||
PCT/EP2015/066715 WO2016012479A1 (de) | 2014-07-24 | 2015-07-22 | Träger für ein elektrisches bauelement |
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JP5456209B2 (ja) * | 2011-08-01 | 2014-03-26 | 株式会社Steq | 半導体装置及びその製造方法 |
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JPS5459080A (en) * | 1977-10-19 | 1979-05-12 | Nec Corp | Semiconductor device |
US4835345A (en) * | 1987-09-18 | 1989-05-30 | Compaq Computer Corporation | Printed wiring board having robber pads for excess solder |
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2014
- 2014-07-24 DE DE102014110473.0A patent/DE102014110473A1/de not_active Withdrawn
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2015
- 2015-07-22 US US15/327,297 patent/US10008440B2/en active Active
- 2015-07-22 WO PCT/EP2015/066715 patent/WO2016012479A1/de active Application Filing
- 2015-07-22 DE DE112015003405.6T patent/DE112015003405B4/de active Active
- 2015-07-22 JP JP2017501252A patent/JP6490788B2/ja active Active
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JP2002314143A (ja) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
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Also Published As
Publication number | Publication date |
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US20170179016A1 (en) | 2017-06-22 |
DE112015003405B4 (de) | 2024-03-28 |
US10008440B2 (en) | 2018-06-26 |
DE112015003405A5 (de) | 2017-04-20 |
DE102014110473A1 (de) | 2016-01-28 |
JP6490788B2 (ja) | 2019-03-27 |
WO2016012479A1 (de) | 2016-01-28 |
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