JP2017516428A5 - - Google Patents

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JP2017516428A5
JP2017516428A5 JP2017506631A JP2017506631A JP2017516428A5 JP 2017516428 A5 JP2017516428 A5 JP 2017516428A5 JP 2017506631 A JP2017506631 A JP 2017506631A JP 2017506631 A JP2017506631 A JP 2017506631A JP 2017516428 A5 JP2017516428 A5 JP 2017516428A5
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cavity
ultrasonic transducer
semiconductor substrate
electrode
metallization layer
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JP2017506631A
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JP6636502B2 (ja
JP2017516428A (ja
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Priority claimed from PCT/US2015/026290 external-priority patent/WO2015161147A1/en
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JP2017506631A 2014-04-18 2015-04-17 相補型金属酸化膜半導体（ｃｍｏｓ）ウェーハにおける超音波トランスデューサ並びに関連装置及び方法 Expired - Fee Related JP6636502B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461981464P 2014-04-18 2014-04-18
US61/981,464 2014-04-18
PCT/US2015/026290 WO2015161147A1 (en) 2014-04-18 2015-04-17 Ultrasonic transducers in complementary metal oxide semiconductor (cmos) wafers and related apparatus and methods

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JP2017516428A JP2017516428A (ja) 2017-06-15
JP2017516428A5 true JP2017516428A5 (OSRAM) 2018-05-24
JP6636502B2 JP6636502B2 (ja) 2020-01-29

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JP2017506631A Expired - Fee Related JP6636502B2 (ja) 2014-04-18 2015-04-17 相補型金属酸化膜半導体（ｃｍｏｓ）ウェーハにおける超音波トランスデューサ並びに関連装置及び方法

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US (4) US9505030B2 (OSRAM)
EP (1) EP3132470B1 (OSRAM)
JP (1) JP6636502B2 (OSRAM)
KR (1) KR102237662B1 (OSRAM)
CN (1) CN106659464B (OSRAM)
AU (1) AU2015247484B2 (OSRAM)
CA (1) CA2946133A1 (OSRAM)
TW (2) TWI661534B (OSRAM)
WO (1) WO2015161147A1 (OSRAM)

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