JP2012085239A5 - - Google Patents
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- Publication number
- JP2012085239A5 JP2012085239A5 JP2010232046A JP2010232046A JP2012085239A5 JP 2012085239 A5 JP2012085239 A5 JP 2012085239A5 JP 2010232046 A JP2010232046 A JP 2010232046A JP 2010232046 A JP2010232046 A JP 2010232046A JP 2012085239 A5 JP2012085239 A5 JP 2012085239A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating layer
- forming
- semiconductor
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 35
- 239000000758 substrate Substances 0.000 claims 20
- 239000004020 conductor Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 3
- 230000001681 protective effect Effects 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010232046A JP5677016B2 (ja) | 2010-10-15 | 2010-10-15 | 電気機械変換装置及びその作製方法 |
| US13/248,440 US8653613B2 (en) | 2010-10-15 | 2011-09-29 | Electromechanical transducer and method of manufacturing the same |
| EP11184163.1A EP2441530A3 (en) | 2010-10-15 | 2011-10-06 | Electromechanical transducer and method of manufacturing the same |
| CN201110310468.7A CN102569306B (zh) | 2010-10-15 | 2011-10-14 | 电气机械变换器及其制造方法 |
| US14/146,853 US8980670B2 (en) | 2010-10-15 | 2014-01-03 | Electromechanical transducer and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010232046A JP5677016B2 (ja) | 2010-10-15 | 2010-10-15 | 電気機械変換装置及びその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012085239A JP2012085239A (ja) | 2012-04-26 |
| JP2012085239A5 true JP2012085239A5 (OSRAM) | 2013-11-28 |
| JP5677016B2 JP5677016B2 (ja) | 2015-02-25 |
Family
ID=44907744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010232046A Expired - Fee Related JP5677016B2 (ja) | 2010-10-15 | 2010-10-15 | 電気機械変換装置及びその作製方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8653613B2 (OSRAM) |
| EP (1) | EP2441530A3 (OSRAM) |
| JP (1) | JP5677016B2 (OSRAM) |
| CN (1) | CN102569306B (OSRAM) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5581106B2 (ja) * | 2009-04-27 | 2014-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5896665B2 (ja) * | 2011-09-20 | 2016-03-30 | キヤノン株式会社 | 電気機械変換装置の製造方法 |
| NL2009757C2 (en) * | 2012-11-05 | 2014-05-08 | Micronit Microfluidics Bv | Method for forming an electrically conductive via in a substrate. |
| CN104812504B (zh) * | 2012-11-20 | 2018-01-26 | 皇家飞利浦有限公司 | 电容性微加工换能器和制造所述电容性微加工换能器的方法 |
| US9499392B2 (en) | 2013-02-05 | 2016-11-22 | Butterfly Network, Inc. | CMOS ultrasonic transducers and related apparatus and methods |
| TWI623081B (zh) | 2013-03-15 | 2018-05-01 | 蝴蝶網路公司 | 互補式金屬氧化物半導體（ｃｍｏｓ）超音波換能器以及用於形成其之方法 |
| US9721832B2 (en) * | 2013-03-15 | 2017-08-01 | Kulite Semiconductor Products, Inc. | Methods of fabricating silicon-on-insulator (SOI) semiconductor devices using blanket fusion bonding |
| JP6381195B2 (ja) * | 2013-10-22 | 2018-08-29 | キヤノン株式会社 | 静電容量型トランスデューサ及びその作製方法 |
| CN105722609B (zh) * | 2013-11-18 | 2018-03-06 | 皇家飞利浦有限公司 | 超声换能器组件 |
| KR20150065067A (ko) * | 2013-12-04 | 2015-06-12 | 삼성전자주식회사 | 정전용량 미세가공 초음파 변환기 및 그 제조방법 |
| KR102155695B1 (ko) * | 2014-02-12 | 2020-09-21 | 삼성전자주식회사 | 전기 음향 변환기 |
| JP6545976B2 (ja) | 2014-03-07 | 2019-07-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10239093B2 (en) * | 2014-03-12 | 2019-03-26 | Koninklijke Philips N.V. | Ultrasound transducer assembly and method for manufacturing an ultrasound transducer assembly |
| US9067779B1 (en) | 2014-07-14 | 2015-06-30 | Butterfly Network, Inc. | Microfabricated ultrasonic transducers and related apparatus and methods |
| CN108698812A (zh) * | 2015-09-18 | 2018-10-23 | 韦斯伯技术公司 | 板弹簧 |
| JP6917700B2 (ja) | 2015-12-02 | 2021-08-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US11039814B2 (en) | 2016-12-04 | 2021-06-22 | Exo Imaging, Inc. | Imaging devices having piezoelectric transducers |
| US10512936B2 (en) | 2017-06-21 | 2019-12-24 | Butterfly Network, Inc. | Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections |
| US10656007B2 (en) | 2018-04-11 | 2020-05-19 | Exo Imaging Inc. | Asymmetrical ultrasound transducer array |
| US10648852B2 (en) | 2018-04-11 | 2020-05-12 | Exo Imaging Inc. | Imaging devices having piezoelectric transceivers |
| WO2019226547A1 (en) | 2018-05-21 | 2019-11-28 | Exo Imaging, Inc. | Ultrasonic transducers with q spoiling |
| EP3830877A4 (en) | 2018-08-01 | 2021-10-20 | Exo Imaging Inc. | SYSTEMS AND PROCEDURES FOR THE INTEGRATION OF ULTRASONIC CONVERTERS WITH HYBRID CONTACTS |
| WO2020190732A1 (en) * | 2019-03-15 | 2020-09-24 | Massachusetts Institute Of Technology | Microscale and nanoscale structured electromechanical transducers employing compliant dielectric spacers |
| TW202519098A (zh) | 2019-09-12 | 2025-05-01 | 美商艾克索影像股份有限公司 | 經由邊緣溝槽、虛擬樞軸及自由邊界而增強的微加工超音波傳感器(mut)耦合效率及頻寬 |
| WO2022211778A1 (en) * | 2021-03-29 | 2022-10-06 | Exo Imaging, Inc. | Trenches for the reduction of cross-talk in mut arrays |
| US11951512B2 (en) | 2021-03-31 | 2024-04-09 | Exo Imaging, Inc. | Imaging devices having piezoelectric transceivers with harmonic characteristics |
| US11819881B2 (en) | 2021-03-31 | 2023-11-21 | Exo Imaging, Inc. | Imaging devices having piezoelectric transceivers with harmonic characteristics |
| US12486159B2 (en) | 2021-06-30 | 2025-12-02 | Exo Imaging, Inc. | Micro-machined ultrasound transducers with insulation layer and methods of manufacture |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2765398B1 (fr) * | 1997-06-25 | 1999-07-30 | Commissariat Energie Atomique | Structure a composant microelectronique en materiau semi-conducteur difficile a graver et a trous metallises |
| DE69737262T2 (de) * | 1997-11-26 | 2007-11-08 | Stmicroelectronics S.R.L., Agrate Brianza | Herstellungsverfahren für einen Vorder-Hinterseiten-Durchkontakt in mikro-integrierten Schaltungen |
| US6430109B1 (en) * | 1999-09-30 | 2002-08-06 | The Board Of Trustees Of The Leland Stanford Junior University | Array of capacitive micromachined ultrasonic transducer elements with through wafer via connections |
| CN1545484A (zh) * | 2001-08-24 | 2004-11-10 | Ф�ء�����˹��˾ | 制造微机电构件的方法 |
| US6958255B2 (en) * | 2002-08-08 | 2005-10-25 | The Board Of Trustees Of The Leland Stanford Junior University | Micromachined ultrasonic transducers and method of fabrication |
| US6836020B2 (en) * | 2003-01-22 | 2004-12-28 | The Board Of Trustees Of The Leland Stanford Junior University | Electrical through wafer interconnects |
| JP2005109221A (ja) * | 2003-09-30 | 2005-04-21 | Toshiba Corp | ウェーハレベルパッケージ及びその製造方法 |
| JP4347885B2 (ja) * | 2004-06-03 | 2009-10-21 | オリンパス株式会社 | 静電容量型超音波振動子の製造方法、当該製造方法によって製造された静電容量型超音波振動子を備えた超音波内視鏡装置、静電容量型超音波プローブおよび静電容量型超音波振動子 |
| US7393758B2 (en) * | 2005-11-03 | 2008-07-01 | Maxim Integrated Products, Inc. | Wafer level packaging process |
| US8372680B2 (en) * | 2006-03-10 | 2013-02-12 | Stc.Unm | Three-dimensional, ultrasonic transducer arrays, methods of making ultrasonic transducer arrays, and devices including ultrasonic transducer arrays |
| US7741686B2 (en) | 2006-07-20 | 2010-06-22 | The Board Of Trustees Of The Leland Stanford Junior University | Trench isolated capacitive micromachined ultrasonic transducer arrays with a supporting frame |
| JP5188188B2 (ja) * | 2008-01-15 | 2013-04-24 | キヤノン株式会社 | 容量型超音波トランスデューサの製造方法 |
| JP2009291514A (ja) * | 2008-06-09 | 2009-12-17 | Canon Inc | 静電容量型トランスデューサの製造方法、及び静電容量型トランスデューサ |
| JP5376982B2 (ja) * | 2008-06-30 | 2013-12-25 | キヤノン株式会社 | 機械電気変換素子と機械電気変換装置および機械電気変換装置の作製方法 |
| JP5436013B2 (ja) * | 2009-04-10 | 2014-03-05 | キヤノン株式会社 | 機械電気変化素子 |
| US8445304B2 (en) * | 2009-06-02 | 2013-05-21 | Micralyne Inc. | Semi-conductor sensor fabrication |
-
2010
- 2010-10-15 JP JP2010232046A patent/JP5677016B2/ja not_active Expired - Fee Related
-
2011
- 2011-09-29 US US13/248,440 patent/US8653613B2/en not_active Expired - Fee Related
- 2011-10-06 EP EP11184163.1A patent/EP2441530A3/en not_active Withdrawn
- 2011-10-14 CN CN201110310468.7A patent/CN102569306B/zh not_active Expired - Fee Related
-
2014
- 2014-01-03 US US14/146,853 patent/US8980670B2/en not_active Expired - Fee Related
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