JP2017515885A5 - - Google Patents
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- Publication number
- JP2017515885A5 JP2017515885A5 JP2016575311A JP2016575311A JP2017515885A5 JP 2017515885 A5 JP2017515885 A5 JP 2017515885A5 JP 2016575311 A JP2016575311 A JP 2016575311A JP 2016575311 A JP2016575311 A JP 2016575311A JP 2017515885 A5 JP2017515885 A5 JP 2017515885A5
- Authority
- JP
- Japan
- Prior art keywords
- butyl
- hydrogen
- trimethylsilyl
- group
- tert
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052739 hydrogen Inorganic materials 0.000 claims 17
- 239000001257 hydrogen Substances 0.000 claims 17
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 claims 12
- 150000002431 hydrogen Chemical class 0.000 claims 11
- 125000002524 organometallic group Chemical group 0.000 claims 11
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 8
- 125000004665 trialkylsilyl group Chemical group 0.000 claims 7
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 6
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims 6
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 6
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims 6
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 6
- 125000000217 alkyl group Chemical group 0.000 claims 5
- 238000005229 chemical vapour deposition Methods 0.000 claims 5
- 238000000231 atomic layer deposition Methods 0.000 claims 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims 4
- 125000005103 alkyl silyl group Chemical group 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 3
- 238000007740 vapor deposition Methods 0.000 claims 3
- 210000002381 Plasma Anatomy 0.000 claims 2
- 230000000875 corresponding Effects 0.000 claims 2
- 238000002347 injection Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 claims 2
- CBENFWSGALASAD-UHFFFAOYSA-N ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 2
- 239000000376 reactant Substances 0.000 claims 2
- 125000001981 tert-butyldimethylsilyl group Chemical group [H]C([H])([H])[Si]([H])(C([H])([H])[H])[*]C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 claims 2
- QXTIBZLKQPJVII-UHFFFAOYSA-N triethylsilicon Chemical group CC[Si](CC)CC QXTIBZLKQPJVII-UHFFFAOYSA-N 0.000 claims 2
- 125000000025 triisopropylsilyl group Chemical group C(C)(C)[Si](C(C)C)(C(C)C)* 0.000 claims 2
- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 claims 1
- 239000003570 air Substances 0.000 claims 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims 1
- 150000004696 coordination complex Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461952633P | 2014-03-13 | 2014-03-13 | |
| US61/952,633 | 2014-03-13 | ||
| PCT/US2015/019604 WO2015138390A1 (en) | 2014-03-13 | 2015-03-10 | Molybdenum silylcyclopentadienyl and silylallyl complexes and use thereof in thin film deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017515885A JP2017515885A (ja) | 2017-06-15 |
| JP2017515885A5 true JP2017515885A5 (US06244707-20010612-C00007.png) | 2018-04-26 |
| JP6471371B2 JP6471371B2 (ja) | 2019-02-20 |
Family
ID=52829313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016575311A Active JP6471371B2 (ja) | 2014-03-13 | 2015-03-10 | モリブデンシルシクロペンタジエニル錯体、シリルアリル錯体、及び、薄膜堆積におけるその使用 |
Country Status (9)
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10155783B2 (en) | 2013-05-28 | 2018-12-18 | Merck Patent Gmbh | Manganese complexes and use thereof for preparing thin films |
| KR102030104B1 (ko) * | 2016-09-09 | 2019-10-08 | 메르크 파텐트 게엠베하 | 알릴 리간드를 포함하는 금속 착화합물 |
| US10361118B2 (en) * | 2016-10-07 | 2019-07-23 | Samsung Electronics Co., Ltd. | Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same |
| US10453744B2 (en) | 2016-11-23 | 2019-10-22 | Entegris, Inc. | Low temperature molybdenum film deposition utilizing boron nucleation layers |
| US20180142345A1 (en) * | 2016-11-23 | 2018-05-24 | Entegris, Inc. | Low temperature molybdenum film deposition utilizing boron nucleation layers |
| KR102355507B1 (ko) | 2018-11-14 | 2022-01-27 | (주)디엔에프 | 몰리브덴 함유 박막의 제조방법 및 이로부터 제조된 몰리브덴함유 박막 |
| JP7433132B2 (ja) * | 2020-05-19 | 2024-02-19 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| CN111777649A (zh) * | 2020-07-16 | 2020-10-16 | 苏州欣溪源新材料科技有限公司 | 二烷基二茂钼类配合物及其制备方法与应用 |
| US11434254B2 (en) | 2021-01-12 | 2022-09-06 | Applied Materials, Inc. | Dinuclear molybdenum precursors for deposition of molybdenum-containing films |
| US11390638B1 (en) | 2021-01-12 | 2022-07-19 | Applied Materials, Inc. | Molybdenum(VI) precursors for deposition of molybdenum films |
| US11459347B2 (en) | 2021-01-12 | 2022-10-04 | Applied Materials, Inc. | Molybdenum(IV) and molybdenum(III) precursors for deposition of molybdenum films |
| US11760768B2 (en) | 2021-04-21 | 2023-09-19 | Applied Materials, Inc. | Molybdenum(0) precursors for deposition of molybdenum films |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE613119A (US06244707-20010612-C00007.png) * | 1961-01-25 | |||
| JPH07107190B2 (ja) | 1984-03-30 | 1995-11-15 | キヤノン株式会社 | 光化学気相成長方法 |
| JPS63196243A (ja) | 1987-02-09 | 1988-08-15 | Hiroyuki Hamano | 肉の削り節及びその製造方法 |
| US5352488A (en) * | 1993-05-14 | 1994-10-04 | Syracuse University | Chemical vapor deposition process employing metal pentadienyl complexes |
| US6491978B1 (en) * | 2000-07-10 | 2002-12-10 | Applied Materials, Inc. | Deposition of CVD layers for copper metallization using novel metal organic chemical vapor deposition (MOCVD) precursors |
| TWI425110B (zh) * | 2007-07-24 | 2014-02-01 | Sigma Aldrich Co | 以化學相沉積法製造含金屬薄膜之方法 |
| US20090203928A1 (en) * | 2008-01-24 | 2009-08-13 | Thompson David M | Organometallic compounds, processes for the preparation thereof and methods of use thereof |
| US20090209777A1 (en) * | 2008-01-24 | 2009-08-20 | Thompson David M | Organometallic compounds, processes for the preparation thereof and methods of use thereof |
| US20090205538A1 (en) * | 2008-01-24 | 2009-08-20 | Thompson David M | Organometallic compounds, processes for the preparation thereof and methods of use thereof |
| DE102008036247A1 (de) | 2008-08-04 | 2010-02-11 | Merck Patent Gmbh | Elektronische Vorrichtungen enthaltend Metallkomplexe |
| KR101538982B1 (ko) | 2009-08-07 | 2015-07-23 | 시그마-알드리치 컴퍼니., 엘엘씨 | 고분자량 알킬알릴 코발트트리카르보닐 착체 및 유전체 박막 제조를 위한 그 용도 |
| WO2012027575A1 (en) | 2010-08-27 | 2012-03-01 | Sigma-Aldrich Co. Llc | Molybdenum (iv) amide precursors and use thereof in atomic layer deposition |
| SG11201404375PA (en) * | 2012-01-26 | 2014-10-30 | Sigma Aldrich Co Llc | Molybdenum allyl complexes and use thereof in thin film deposition |
| US8530348B1 (en) * | 2012-05-29 | 2013-09-10 | Intermolecular, Inc. | Integration of non-noble DRAM electrode |
| US9194040B2 (en) | 2012-07-25 | 2015-11-24 | Applied Materials, Inc. | Methods for producing nickel-containing films |
| US10155783B2 (en) | 2013-05-28 | 2018-12-18 | Merck Patent Gmbh | Manganese complexes and use thereof for preparing thin films |
| GB201318595D0 (en) | 2013-10-21 | 2013-12-04 | Zephyros Inc | Improvements in or relating to laminates |
| WO2015065823A1 (en) | 2013-10-28 | 2015-05-07 | Sigma-Aldrich Co. Llc | Metal complexes containing amidoimine ligands |
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2015
- 2015-03-10 CN CN201580024681.8A patent/CN106460170B/zh active Active
- 2015-03-10 WO PCT/US2015/019604 patent/WO2015138390A1/en active Application Filing
- 2015-03-10 KR KR1020167028173A patent/KR101819482B1/ko active IP Right Grant
- 2015-03-10 SG SG11201607587YA patent/SG11201607587YA/en unknown
- 2015-03-10 US US15/124,783 patent/US10745430B2/en active Active
- 2015-03-10 JP JP2016575311A patent/JP6471371B2/ja active Active
- 2015-03-10 EP EP15716201.7A patent/EP3116884B1/en active Active
- 2015-03-13 TW TW104108214A patent/TWI660958B/zh active
-
2016
- 2016-09-08 IL IL247719A patent/IL247719A/en active IP Right Grant
