JP2017514319A5 - - Google Patents

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Publication number
JP2017514319A5
JP2017514319A5 JP2017507937A JP2017507937A JP2017514319A5 JP 2017514319 A5 JP2017514319 A5 JP 2017514319A5 JP 2017507937 A JP2017507937 A JP 2017507937A JP 2017507937 A JP2017507937 A JP 2017507937A JP 2017514319 A5 JP2017514319 A5 JP 2017514319A5
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JP
Japan
Prior art keywords
layer
type
semiconductor device
substrate
semiconductor
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JP2017507937A
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English (en)
Japanese (ja)
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JP6657183B2 (ja
JP2017514319A (ja
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Priority claimed from US14/555,330 external-priority patent/US9385187B2/en
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Publication of JP2017514319A5 publication Critical patent/JP2017514319A5/ja
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Publication of JP6657183B2 publication Critical patent/JP6657183B2/ja
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JP2017507937A 2014-04-25 2015-04-27 高ブレークダウンｎ型埋め込み層 Active JP6657183B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461984205P 2014-04-25 2014-04-25
US61/984,205 2014-04-25
US14/555,330 2014-11-26
US14/555,330 US9385187B2 (en) 2014-04-25 2014-11-26 High breakdown N-type buried layer
PCT/US2015/027699 WO2015164853A1 (en) 2014-04-25 2015-04-27 High breakdown n-type buried layer

Publications (3)

Publication Number Publication Date
JP2017514319A JP2017514319A (ja) 2017-06-01
JP2017514319A5 true JP2017514319A5 (cg-RX-API-DMAC7.html) 2018-06-07
JP6657183B2 JP6657183B2 (ja) 2020-03-04

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ID=54333345

Family Applications (1)

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JP2017507937A Active JP6657183B2 (ja) 2014-04-25 2015-04-27 高ブレークダウンｎ型埋め込み層

Country Status (4)

Country Link
US (2) US9385187B2 (cg-RX-API-DMAC7.html)
JP (1) JP6657183B2 (cg-RX-API-DMAC7.html)
CN (1) CN106233439B (cg-RX-API-DMAC7.html)
WO (1) WO2015164853A1 (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9385187B2 (en) * 2014-04-25 2016-07-05 Texas Instruments Incorporated High breakdown N-type buried layer
DE102017103782B4 (de) * 2017-02-23 2021-03-25 Infineon Technologies Ag Halbleitervorrichtung mit einer vergrabenen Schicht und Herstellungsverfahren hierfür
FR3089679A1 (fr) 2018-12-11 2020-06-12 Stmicroelectronics (Tours) Sas Dispositif de commutation et procédé de fabrication d'un tel dispositif
CN114695505B (zh) * 2020-12-29 2025-01-24 无锡华润上华科技有限公司 电子设备、半导体器件及其制备方法
CN118041270A (zh) * 2022-11-04 2024-05-14 广州乐仪投资有限公司 半导体结构的制备方法、半导体结构及电子设备
US20240363394A1 (en) * 2023-04-28 2024-10-31 Texas Instruments Incorporated Integrated circuit with improved isolation

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