JP2017513344A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2017513344A5 JP2017513344A5 JP2016557627A JP2016557627A JP2017513344A5 JP 2017513344 A5 JP2017513344 A5 JP 2017513344A5 JP 2016557627 A JP2016557627 A JP 2016557627A JP 2016557627 A JP2016557627 A JP 2016557627A JP 2017513344 A5 JP2017513344 A5 JP 2017513344A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- region
- stack
- forming
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14161057.6 | 2014-03-21 | ||
EP14161057 | 2014-03-21 | ||
PCT/EP2015/054801 WO2015139979A1 (en) | 2014-03-21 | 2015-03-09 | Cmut device and manufacturing method |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017513344A JP2017513344A (ja) | 2017-05-25 |
JP2017513344A5 true JP2017513344A5 (enrdf_load_stackoverflow) | 2017-09-21 |
JP6422991B2 JP6422991B2 (ja) | 2018-11-14 |
Family
ID=50391021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016557627A Expired - Fee Related JP6422991B2 (ja) | 2014-03-21 | 2015-03-09 | Cmutデバイス及び製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9889472B2 (enrdf_load_stackoverflow) |
EP (1) | EP3119533B1 (enrdf_load_stackoverflow) |
JP (1) | JP6422991B2 (enrdf_load_stackoverflow) |
CN (1) | CN106132568B (enrdf_load_stackoverflow) |
WO (1) | WO2015139979A1 (enrdf_load_stackoverflow) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108348217B (zh) * | 2015-11-02 | 2021-07-20 | 皇家飞利浦有限公司 | 超声换能器阵列、探头和系统 |
CN106865483A (zh) * | 2017-01-06 | 2017-06-20 | 中北大学 | 医用微电容超声换能器面阵探头及其制备方法 |
CN106744642A (zh) * | 2017-01-06 | 2017-05-31 | 中北大学 | 收发平衡的宽频带混合式超声换能器面阵探头及制备方法 |
US11440794B2 (en) * | 2018-09-12 | 2022-09-13 | Stmicroelectronics S.R.L. | Process for manufacturing a microelectromechanical device with a mobile structure, in particular a micromirror |
US11329098B2 (en) | 2018-11-08 | 2022-05-10 | Vanguard International Semiconductor Singapore Pte. Ltd. | Piezoelectric micromachined ultrasonic transducers and methods for fabricating thereof |
DE102018222749A1 (de) * | 2018-12-21 | 2020-06-25 | Robert Bosch Gmbh | Verfahren zum Verschließen von Zugängen in einem MEMS-Element |
US11050012B2 (en) * | 2019-04-01 | 2021-06-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to protect electrodes from oxidation in a MEMS device |
CN110174453B (zh) * | 2019-05-08 | 2021-08-03 | 中国科学院微电子研究所 | 一种微电极结构及其制作方法及包括该器件的电子设备 |
EP4021649A1 (en) * | 2019-08-30 | 2022-07-06 | Vermon S.A. | Cmut transducer |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5591678A (en) * | 1993-01-19 | 1997-01-07 | He Holdings, Inc. | Process of manufacturing a microelectric device using a removable support substrate and etch-stop |
US6165896A (en) | 1998-06-25 | 2000-12-26 | Siemens Aktiengesellschaft | Self-aligned formation and method for semiconductors |
KR101027979B1 (ko) * | 2003-09-22 | 2011-04-13 | 티피오 홍콩 홀딩 리미티드 | 액정 디스플레이 디바이스 제조 방법 |
EP1713399A4 (en) * | 2004-02-06 | 2010-08-11 | Georgia Tech Res Inst | CMUT DEVICES AND MANUFACTURING METHOD |
WO2005114820A2 (en) * | 2004-05-14 | 2005-12-01 | The University Of Georgia Research Foundation, Inc. | Implantable ultrasonic transducer systems and methods |
EP1789816A1 (en) * | 2004-08-18 | 2007-05-30 | Koninklijke Philips Electronics N.V. | Two-dimensional ultrasound transducer arrays |
US8309428B2 (en) | 2004-09-15 | 2012-11-13 | Sonetics Ultrasound, Inc. | Capacitive micromachined ultrasonic transducer |
US8047995B2 (en) | 2007-08-28 | 2011-11-01 | Olympus Medical Systems Corp. | Ultrasonic transducer, method of manufacturing ultrasonic transducer, ultrasonic diagnostic apparatus, and ultrasonic microscope |
JP4891182B2 (ja) * | 2007-08-28 | 2012-03-07 | オリンパスメディカルシステムズ株式会社 | 超音波トランスデューサ、超音波診断装置及び超音波顕微鏡 |
US7843022B2 (en) * | 2007-10-18 | 2010-11-30 | The Board Of Trustees Of The Leland Stanford Junior University | High-temperature electrostatic transducers and fabrication method |
US7898081B2 (en) * | 2008-07-03 | 2011-03-01 | United Microelectronics Corp. | MEMS device and method of making the same |
JP5317826B2 (ja) * | 2009-05-19 | 2013-10-16 | キヤノン株式会社 | 容量型機械電気変換素子の製造方法 |
JP5875243B2 (ja) | 2011-04-06 | 2016-03-02 | キヤノン株式会社 | 電気機械変換装置及びその作製方法 |
JP2013219303A (ja) * | 2012-04-12 | 2013-10-24 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP6262496B2 (ja) * | 2013-11-08 | 2018-01-17 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US9067779B1 (en) * | 2014-07-14 | 2015-06-30 | Butterfly Network, Inc. | Microfabricated ultrasonic transducers and related apparatus and methods |
-
2015
- 2015-03-09 EP EP15708226.4A patent/EP3119533B1/en active Active
- 2015-03-09 WO PCT/EP2015/054801 patent/WO2015139979A1/en active Application Filing
- 2015-03-09 US US15/126,089 patent/US9889472B2/en active Active
- 2015-03-09 CN CN201580015010.5A patent/CN106132568B/zh active Active
- 2015-03-09 JP JP2016557627A patent/JP6422991B2/ja not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2017513344A5 (enrdf_load_stackoverflow) | ||
TWI661466B (zh) | 使用具有多種材料之一層的基板圖案化方法 | |
KR101045090B1 (ko) | 반도체 소자의 미세 패턴 형성방법 | |
JP2014146802A5 (enrdf_load_stackoverflow) | ||
CN108028268B (zh) | 没有伪栅极的图案化方法 | |
JP2018531506A (ja) | サブ解像度基板パターニングのためのエッチングマスクを形成する方法 | |
JP2018531506A6 (ja) | サブ解像度基板パターニングのためのエッチングマスクを形成する方法 | |
US9142641B1 (en) | Method for manufacturing finFET | |
CN111762753A (zh) | 微机电系统装置及其形成方法 | |
US8835314B2 (en) | Method for fabricating semiconductor memory device | |
KR101105431B1 (ko) | 미세 패턴 제조 방법 | |
TWI665715B (zh) | 使用具有多種材料之一層的基板圖案化方法 | |
TWI646629B (zh) | 用於積體電路裝置之間隔物啟用之主動隔離 | |
JP6422991B2 (ja) | Cmutデバイス及び製造方法 | |
WO2008027593A3 (en) | Improved structure and method for fabrication of field effect transistor gates with or without field plates | |
JP2014063866A (ja) | シリコン基板の加工方法及び荷電粒子線レンズの製造方法 | |
US9324760B2 (en) | CMOS integrated method for fabrication of thermopile pixel on semiconductor substrate with buried insulation regions | |
KR20130005185A (ko) | 미세 홀 배열 및 미세 전극 배열 형성 방법 | |
CN106229298A (zh) | 一种阵列基板及其制作方法 | |
US20150170997A1 (en) | Mems device and manufacturing method of the same | |
CN108198751B (zh) | 光阻层剥离方法 | |
CN107833889A (zh) | 3d nand闪存的台阶接触孔的构建方法 | |
CN103578970B (zh) | 制造半导体器件的方法 | |
CN103208458B (zh) | 嵌入式闪存的制造方法 | |
CN105430585A (zh) | 可追踪芯片及其制作方法和电子设备 |