JP2017513344A5 - - Google Patents

Download PDF

Info

Publication number
JP2017513344A5
JP2017513344A5 JP2016557627A JP2016557627A JP2017513344A5 JP 2017513344 A5 JP2017513344 A5 JP 2017513344A5 JP 2016557627 A JP2016557627 A JP 2016557627A JP 2016557627 A JP2016557627 A JP 2016557627A JP 2017513344 A5 JP2017513344 A5 JP 2017513344A5
Authority
JP
Japan
Prior art keywords
dielectric layer
region
stack
forming
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016557627A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017513344A (ja
JP6422991B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/EP2015/054801 external-priority patent/WO2015139979A1/en
Publication of JP2017513344A publication Critical patent/JP2017513344A/ja
Publication of JP2017513344A5 publication Critical patent/JP2017513344A5/ja
Application granted granted Critical
Publication of JP6422991B2 publication Critical patent/JP6422991B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2016557627A 2014-03-21 2015-03-09 Cmutデバイス及び製造方法 Expired - Fee Related JP6422991B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14161057.6 2014-03-21
EP14161057 2014-03-21
PCT/EP2015/054801 WO2015139979A1 (en) 2014-03-21 2015-03-09 Cmut device and manufacturing method

Publications (3)

Publication Number Publication Date
JP2017513344A JP2017513344A (ja) 2017-05-25
JP2017513344A5 true JP2017513344A5 (enrdf_load_stackoverflow) 2017-09-21
JP6422991B2 JP6422991B2 (ja) 2018-11-14

Family

ID=50391021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016557627A Expired - Fee Related JP6422991B2 (ja) 2014-03-21 2015-03-09 Cmutデバイス及び製造方法

Country Status (5)

Country Link
US (1) US9889472B2 (enrdf_load_stackoverflow)
EP (1) EP3119533B1 (enrdf_load_stackoverflow)
JP (1) JP6422991B2 (enrdf_load_stackoverflow)
CN (1) CN106132568B (enrdf_load_stackoverflow)
WO (1) WO2015139979A1 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108348217B (zh) * 2015-11-02 2021-07-20 皇家飞利浦有限公司 超声换能器阵列、探头和系统
CN106865483A (zh) * 2017-01-06 2017-06-20 中北大学 医用微电容超声换能器面阵探头及其制备方法
CN106744642A (zh) * 2017-01-06 2017-05-31 中北大学 收发平衡的宽频带混合式超声换能器面阵探头及制备方法
US11440794B2 (en) * 2018-09-12 2022-09-13 Stmicroelectronics S.R.L. Process for manufacturing a microelectromechanical device with a mobile structure, in particular a micromirror
US11329098B2 (en) 2018-11-08 2022-05-10 Vanguard International Semiconductor Singapore Pte. Ltd. Piezoelectric micromachined ultrasonic transducers and methods for fabricating thereof
DE102018222749A1 (de) * 2018-12-21 2020-06-25 Robert Bosch Gmbh Verfahren zum Verschließen von Zugängen in einem MEMS-Element
US11050012B2 (en) * 2019-04-01 2021-06-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method to protect electrodes from oxidation in a MEMS device
CN110174453B (zh) * 2019-05-08 2021-08-03 中国科学院微电子研究所 一种微电极结构及其制作方法及包括该器件的电子设备
EP4021649A1 (en) * 2019-08-30 2022-07-06 Vermon S.A. Cmut transducer

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5591678A (en) * 1993-01-19 1997-01-07 He Holdings, Inc. Process of manufacturing a microelectric device using a removable support substrate and etch-stop
US6165896A (en) 1998-06-25 2000-12-26 Siemens Aktiengesellschaft Self-aligned formation and method for semiconductors
KR101027979B1 (ko) * 2003-09-22 2011-04-13 티피오 홍콩 홀딩 리미티드 액정 디스플레이 디바이스 제조 방법
EP1713399A4 (en) * 2004-02-06 2010-08-11 Georgia Tech Res Inst CMUT DEVICES AND MANUFACTURING METHOD
WO2005114820A2 (en) * 2004-05-14 2005-12-01 The University Of Georgia Research Foundation, Inc. Implantable ultrasonic transducer systems and methods
EP1789816A1 (en) * 2004-08-18 2007-05-30 Koninklijke Philips Electronics N.V. Two-dimensional ultrasound transducer arrays
US8309428B2 (en) 2004-09-15 2012-11-13 Sonetics Ultrasound, Inc. Capacitive micromachined ultrasonic transducer
US8047995B2 (en) 2007-08-28 2011-11-01 Olympus Medical Systems Corp. Ultrasonic transducer, method of manufacturing ultrasonic transducer, ultrasonic diagnostic apparatus, and ultrasonic microscope
JP4891182B2 (ja) * 2007-08-28 2012-03-07 オリンパスメディカルシステムズ株式会社 超音波トランスデューサ、超音波診断装置及び超音波顕微鏡
US7843022B2 (en) * 2007-10-18 2010-11-30 The Board Of Trustees Of The Leland Stanford Junior University High-temperature electrostatic transducers and fabrication method
US7898081B2 (en) * 2008-07-03 2011-03-01 United Microelectronics Corp. MEMS device and method of making the same
JP5317826B2 (ja) * 2009-05-19 2013-10-16 キヤノン株式会社 容量型機械電気変換素子の製造方法
JP5875243B2 (ja) 2011-04-06 2016-03-02 キヤノン株式会社 電気機械変換装置及びその作製方法
JP2013219303A (ja) * 2012-04-12 2013-10-24 Hitachi Ltd 半導体装置およびその製造方法
JP6262496B2 (ja) * 2013-11-08 2018-01-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9067779B1 (en) * 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods

Similar Documents

Publication Publication Date Title
JP2017513344A5 (enrdf_load_stackoverflow)
TWI661466B (zh) 使用具有多種材料之一層的基板圖案化方法
KR101045090B1 (ko) 반도체 소자의 미세 패턴 형성방법
JP2014146802A5 (enrdf_load_stackoverflow)
CN108028268B (zh) 没有伪栅极的图案化方法
JP2018531506A (ja) サブ解像度基板パターニングのためのエッチングマスクを形成する方法
JP2018531506A6 (ja) サブ解像度基板パターニングのためのエッチングマスクを形成する方法
US9142641B1 (en) Method for manufacturing finFET
CN111762753A (zh) 微机电系统装置及其形成方法
US8835314B2 (en) Method for fabricating semiconductor memory device
KR101105431B1 (ko) 미세 패턴 제조 방법
TWI665715B (zh) 使用具有多種材料之一層的基板圖案化方法
TWI646629B (zh) 用於積體電路裝置之間隔物啟用之主動隔離
JP6422991B2 (ja) Cmutデバイス及び製造方法
WO2008027593A3 (en) Improved structure and method for fabrication of field effect transistor gates with or without field plates
JP2014063866A (ja) シリコン基板の加工方法及び荷電粒子線レンズの製造方法
US9324760B2 (en) CMOS integrated method for fabrication of thermopile pixel on semiconductor substrate with buried insulation regions
KR20130005185A (ko) 미세 홀 배열 및 미세 전극 배열 형성 방법
CN106229298A (zh) 一种阵列基板及其制作方法
US20150170997A1 (en) Mems device and manufacturing method of the same
CN108198751B (zh) 光阻层剥离方法
CN107833889A (zh) 3d nand闪存的台阶接触孔的构建方法
CN103578970B (zh) 制造半导体器件的方法
CN103208458B (zh) 嵌入式闪存的制造方法
CN105430585A (zh) 可追踪芯片及其制作方法和电子设备