JP2017509153A - 太陽電池の受光面のパッシベーション - Google Patents

太陽電池の受光面のパッシベーション Download PDF

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Publication number
JP2017509153A
JP2017509153A JP2016554622A JP2016554622A JP2017509153A JP 2017509153 A JP2017509153 A JP 2017509153A JP 2016554622 A JP2016554622 A JP 2016554622A JP 2016554622 A JP2016554622 A JP 2016554622A JP 2017509153 A JP2017509153 A JP 2017509153A
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Prior art keywords
layer
solar cell
silicon layer
receiving surface
substrate
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JP2016554622A
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English (en)
Japanese (ja)
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JP2017509153A5 (enExample
Inventor
バム リム、スン
バム リム、スン
エー． ソロモン、ジェネビエーブ
エー． ソロモン、ジェネビエーブ
シー． ジョンソン、マイケル
シー． ジョンソン、マイケル
デーモン−ラコステ、ジェローム
マリー オリヴィエ サロモン、アントワン
マリー オリヴィエ サロモン、アントワン
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SunPower Corp
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SunPower Corp
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Publication of JP2017509153A publication Critical patent/JP2017509153A/ja
Publication of JP2017509153A5 publication Critical patent/JP2017509153A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2016554622A 2014-03-26 2015-03-24 太陽電池の受光面のパッシベーション Pending JP2017509153A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/226,368 2014-03-26
US14/226,368 US20150280018A1 (en) 2014-03-26 2014-03-26 Passivation of light-receiving surfaces of solar cells
PCT/US2015/022331 WO2015148568A1 (en) 2014-03-26 2015-03-24 Passivation of light-receiving surfaces of solar cells

Publications (2)

Publication Number Publication Date
JP2017509153A true JP2017509153A (ja) 2017-03-30
JP2017509153A5 JP2017509153A5 (enExample) 2018-12-27

Family

ID=54191550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016554622A Pending JP2017509153A (ja) 2014-03-26 2015-03-24 太陽電池の受光面のパッシベーション

Country Status (8)

Country Link
US (2) US20150280018A1 (enExample)
JP (1) JP2017509153A (enExample)
KR (2) KR20210043013A (enExample)
CN (2) CN110808293A (enExample)
AU (2) AU2015236203A1 (enExample)
DE (1) DE112015001440T5 (enExample)
TW (1) TWI675490B (enExample)
WO (1) WO2015148568A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109983586B (zh) * 2016-11-03 2024-03-12 道达尔销售服务公司 太阳能电池的表面处理
KR101995833B1 (ko) * 2016-11-14 2019-07-03 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US20190386158A1 (en) * 2016-12-16 2019-12-19 Sunpower Corporation Plasma-curing of light-receiving surfaces of solar cells
CN115692544B (zh) * 2021-07-28 2025-09-23 环晟光伏(江苏)有限公司 一种Topcon电池钝化结构的制备方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163952A (ja) * 1992-11-26 1994-06-10 Kyocera Corp 太陽電池素子
JPH08274356A (ja) * 1995-03-29 1996-10-18 Kyocera Corp 太陽電池素子
JPH08298332A (ja) * 1995-04-26 1996-11-12 Sanyo Electric Co Ltd 光起電力装置の製造方法
JPH1084125A (ja) * 1996-07-08 1998-03-31 Semiconductor Energy Lab Co Ltd 光電変換装置およびその製造方法
JP2003258287A (ja) * 2002-03-05 2003-09-12 Sanyo Electric Co Ltd 半導体装置及び光起電力装置並びにその製造方法
JP2010521824A (ja) * 2007-03-16 2010-06-24 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド 太陽電池
JP2012501550A (ja) * 2008-08-27 2012-01-19 アプライド マテリアルズ インコーポレイテッド 印刷誘電体障壁を使用するバックコンタクト太陽電池
JP2012049156A (ja) * 2010-08-24 2012-03-08 Osaka Univ 太陽電池およびその製造方法
CN103346211A (zh) * 2013-06-26 2013-10-09 英利集团有限公司 一种背接触太阳能电池及其制作方法

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US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
NL1030200C2 (nl) * 2005-10-14 2007-04-17 Stichting Energie Werkwijze voor het vervaardigen van n-type multikristallijn silicium zonnecellen.
US20070169808A1 (en) * 2006-01-26 2007-07-26 Kherani Nazir P Solar cell
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
KR101293162B1 (ko) * 2007-11-09 2013-08-12 선프림, 리미티드 저-비용 태양 전지 및 그 제조 방법
US8076175B2 (en) * 2008-02-25 2011-12-13 Suniva, Inc. Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation
US9564542B2 (en) * 2009-09-17 2017-02-07 Tetrasun, Inc. Selective transformation in functional films, and solar cell applications thereof
US20110068367A1 (en) * 2009-09-23 2011-03-24 Sierra Solar Power, Inc. Double-sided heterojunction solar cell based on thin epitaxial silicon
US8084280B2 (en) * 2009-10-05 2011-12-27 Akrion Systems, Llc Method of manufacturing a solar cell using a pre-cleaning step that contributes to homogeneous texture morphology
KR20110128619A (ko) * 2010-05-24 2011-11-30 삼성전자주식회사 태양 전지 및 이의 제조 방법
KR101275575B1 (ko) * 2010-10-11 2013-06-14 엘지전자 주식회사 후면전극형 태양전지 및 이의 제조 방법
US8492253B2 (en) * 2010-12-02 2013-07-23 Sunpower Corporation Method of forming contacts for a back-contact solar cell
JP5723143B2 (ja) * 2010-12-06 2015-05-27 シャープ株式会社 裏面電極型太陽電池の製造方法、および裏面電極型太陽電池
WO2012132615A1 (ja) * 2011-03-25 2012-10-04 三洋電機株式会社 光電変換装置及びその製造方法
WO2012132758A1 (ja) * 2011-03-28 2012-10-04 三洋電機株式会社 光電変換装置及び光電変換装置の製造方法
US20130130430A1 (en) * 2011-05-20 2013-05-23 Solexel, Inc. Spatially selective laser annealing applications in high-efficiency solar cells

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163952A (ja) * 1992-11-26 1994-06-10 Kyocera Corp 太陽電池素子
JPH08274356A (ja) * 1995-03-29 1996-10-18 Kyocera Corp 太陽電池素子
JPH08298332A (ja) * 1995-04-26 1996-11-12 Sanyo Electric Co Ltd 光起電力装置の製造方法
JPH1084125A (ja) * 1996-07-08 1998-03-31 Semiconductor Energy Lab Co Ltd 光電変換装置およびその製造方法
JP2003258287A (ja) * 2002-03-05 2003-09-12 Sanyo Electric Co Ltd 半導体装置及び光起電力装置並びにその製造方法
JP2010521824A (ja) * 2007-03-16 2010-06-24 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド 太陽電池
JP2012501550A (ja) * 2008-08-27 2012-01-19 アプライド マテリアルズ インコーポレイテッド 印刷誘電体障壁を使用するバックコンタクト太陽電池
JP2012049156A (ja) * 2010-08-24 2012-03-08 Osaka Univ 太陽電池およびその製造方法
CN103346211A (zh) * 2013-06-26 2013-10-09 英利集团有限公司 一种背接触太阳能电池及其制作方法

Also Published As

Publication number Publication date
AU2015236203A1 (en) 2016-06-16
KR20210043013A (ko) 2021-04-20
US20190051769A1 (en) 2019-02-14
CN106133916A (zh) 2016-11-16
US20150280018A1 (en) 2015-10-01
CN110808293A (zh) 2020-02-18
CN106133916B (zh) 2019-11-12
TWI675490B (zh) 2019-10-21
KR20160138183A (ko) 2016-12-02
WO2015148568A1 (en) 2015-10-01
DE112015001440T5 (de) 2017-01-26
AU2019283886A1 (en) 2020-01-23
TW201611309A (zh) 2016-03-16

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