KR20160138183A - 태양 전지의 수광 표면의 패시베이션 - Google Patents

태양 전지의 수광 표면의 패시베이션 Download PDF

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Publication number
KR20160138183A
KR20160138183A KR1020167029440A KR20167029440A KR20160138183A KR 20160138183 A KR20160138183 A KR 20160138183A KR 1020167029440 A KR1020167029440 A KR 1020167029440A KR 20167029440 A KR20167029440 A KR 20167029440A KR 20160138183 A KR20160138183 A KR 20160138183A
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KR
South Korea
Prior art keywords
layer
solar cell
silicon layer
type
receiving surface
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Ceased
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KR1020167029440A
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English (en)
Korean (ko)
Inventor
승범 임
제네비에브 에이 솔로몬
마이클 씨 존슨
제롬 다몬-라코스테
안트완 마리 올리비에 살로몬
Original Assignee
선파워 코포레이션
토탈 마케팅 서비스
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Publication of KR20160138183A publication Critical patent/KR20160138183A/ko
Ceased legal-status Critical Current

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    • H01L31/02168—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H01L31/02366—
    • H01L31/0682—
    • H01L31/0745—
    • H01L31/186—
    • H01L31/1868—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020167029440A 2014-03-26 2015-03-24 태양 전지의 수광 표면의 패시베이션 Ceased KR20160138183A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/226,368 2014-03-26
US14/226,368 US20150280018A1 (en) 2014-03-26 2014-03-26 Passivation of light-receiving surfaces of solar cells
PCT/US2015/022331 WO2015148568A1 (en) 2014-03-26 2015-03-24 Passivation of light-receiving surfaces of solar cells

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020217010733A Division KR20210043013A (ko) 2014-03-26 2015-03-24 태양 전지의 수광 표면의 패시베이션

Publications (1)

Publication Number Publication Date
KR20160138183A true KR20160138183A (ko) 2016-12-02

Family

ID=54191550

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020167029440A Ceased KR20160138183A (ko) 2014-03-26 2015-03-24 태양 전지의 수광 표면의 패시베이션
KR1020217010733A Ceased KR20210043013A (ko) 2014-03-26 2015-03-24 태양 전지의 수광 표면의 패시베이션

Family Applications After (1)

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KR1020217010733A Ceased KR20210043013A (ko) 2014-03-26 2015-03-24 태양 전지의 수광 표면의 패시베이션

Country Status (8)

Country Link
US (2) US20150280018A1 (enExample)
JP (1) JP2017509153A (enExample)
KR (2) KR20160138183A (enExample)
CN (2) CN106133916B (enExample)
AU (2) AU2015236203A1 (enExample)
DE (1) DE112015001440T5 (enExample)
TW (1) TWI675490B (enExample)
WO (1) WO2015148568A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102531037B1 (ko) * 2016-11-03 2023-05-09 토탈에너지스 마케팅 써비씨즈 태양 전지의 표면 처리
KR101995833B1 (ko) * 2016-11-14 2019-07-03 엘지전자 주식회사 태양 전지 및 이의 제조 방법
WO2018112067A1 (en) * 2016-12-16 2018-06-21 Sunpower Corporation Plasma-curing of light-receiving surfaces of solar cells
CN115692544B (zh) * 2021-07-28 2025-09-23 环晟光伏(江苏)有限公司 一种Topcon电池钝化结构的制备方法

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JPH06163952A (ja) * 1992-11-26 1994-06-10 Kyocera Corp 太陽電池素子
JPH08274356A (ja) * 1995-03-29 1996-10-18 Kyocera Corp 太陽電池素子
JP3281760B2 (ja) * 1995-04-26 2002-05-13 三洋電機株式会社 光起電力装置の製造方法
JP4197193B2 (ja) * 1996-07-08 2008-12-17 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP4070483B2 (ja) * 2002-03-05 2008-04-02 三洋電機株式会社 光起電力装置並びにその製造方法
US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
NL1030200C2 (nl) * 2005-10-14 2007-04-17 Stichting Energie Werkwijze voor het vervaardigen van n-type multikristallijn silicium zonnecellen.
US20070169808A1 (en) * 2006-01-26 2007-07-26 Kherani Nazir P Solar cell
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
JP2010521824A (ja) * 2007-03-16 2010-06-24 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド 太陽電池
WO2009062117A1 (en) * 2007-11-09 2009-05-14 Sunpreme, Inc. Low-cost solar cells and methods for their production
US8076175B2 (en) * 2008-02-25 2011-12-13 Suniva, Inc. Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation
JP2012501550A (ja) * 2008-08-27 2012-01-19 アプライド マテリアルズ インコーポレイテッド 印刷誘電体障壁を使用するバックコンタクト太陽電池
WO2011035090A1 (en) * 2009-09-17 2011-03-24 Tetrasun, Inc. Selective transformation in functional films, and solar cell applications thereof
US20110068367A1 (en) * 2009-09-23 2011-03-24 Sierra Solar Power, Inc. Double-sided heterojunction solar cell based on thin epitaxial silicon
US8084280B2 (en) * 2009-10-05 2011-12-27 Akrion Systems, Llc Method of manufacturing a solar cell using a pre-cleaning step that contributes to homogeneous texture morphology
KR20110128619A (ko) * 2010-05-24 2011-11-30 삼성전자주식회사 태양 전지 및 이의 제조 방법
JP2012049156A (ja) * 2010-08-24 2012-03-08 Osaka Univ 太陽電池およびその製造方法
KR101275575B1 (ko) * 2010-10-11 2013-06-14 엘지전자 주식회사 후면전극형 태양전지 및 이의 제조 방법
US8492253B2 (en) * 2010-12-02 2013-07-23 Sunpower Corporation Method of forming contacts for a back-contact solar cell
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JPWO2012132758A1 (ja) * 2011-03-28 2014-07-28 三洋電機株式会社 光電変換装置及び光電変換装置の製造方法
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Also Published As

Publication number Publication date
AU2019283886A1 (en) 2020-01-23
KR20210043013A (ko) 2021-04-20
JP2017509153A (ja) 2017-03-30
WO2015148568A1 (en) 2015-10-01
US20190051769A1 (en) 2019-02-14
CN110808293A (zh) 2020-02-18
TWI675490B (zh) 2019-10-21
US20150280018A1 (en) 2015-10-01
DE112015001440T5 (de) 2017-01-26
CN106133916B (zh) 2019-11-12
CN106133916A (zh) 2016-11-16
AU2015236203A1 (en) 2016-06-16
TW201611309A (zh) 2016-03-16

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