JP2017506830A5 - - Google Patents
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- Publication number
- JP2017506830A5 JP2017506830A5 JP2016552321A JP2016552321A JP2017506830A5 JP 2017506830 A5 JP2017506830 A5 JP 2017506830A5 JP 2016552321 A JP2016552321 A JP 2016552321A JP 2016552321 A JP2016552321 A JP 2016552321A JP 2017506830 A5 JP2017506830 A5 JP 2017506830A5
- Authority
- JP
- Japan
- Prior art keywords
- fin
- region
- stress
- stressor element
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 12
- 239000004065 semiconductor Substances 0.000 claims 10
- 230000006835 compression Effects 0.000 claims 8
- 238000007906 compression Methods 0.000 claims 8
- 230000003647 oxidation Effects 0.000 claims 6
- 238000007254 oxidation reaction Methods 0.000 claims 6
- 235000012239 silicon dioxide Nutrition 0.000 claims 6
- 239000000377 silicon dioxide Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 238000000034 method Methods 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 2
- 238000002347 injection Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 238000001953 recrystallisation Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461946105P | 2014-02-28 | 2014-02-28 | |
| US61/946,105 | 2014-02-28 | ||
| US14/281,660 | 2014-05-19 | ||
| US14/281,660 US9306066B2 (en) | 2014-02-28 | 2014-05-19 | Method and apparatus of stressed FIN NMOS FinFET |
| PCT/US2015/016081 WO2015130507A1 (en) | 2014-02-28 | 2015-02-17 | Method and apparatus of stressed fin nmos finfet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017506830A JP2017506830A (ja) | 2017-03-09 |
| JP2017506830A5 true JP2017506830A5 (enExample) | 2018-03-15 |
Family
ID=54007149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016552321A Pending JP2017506830A (ja) | 2014-02-28 | 2015-02-17 | 応力フィンＮＭＯＳ−ＦｉｎＦＥＴの方法および装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9306066B2 (enExample) |
| EP (1) | EP3111481A1 (enExample) |
| JP (1) | JP2017506830A (enExample) |
| CN (1) | CN106068565B (enExample) |
| WO (1) | WO2015130507A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9391074B1 (en) * | 2015-04-21 | 2016-07-12 | International Business Machines Corporation | Structure for FinFET fins |
| CN106549053B (zh) * | 2015-09-17 | 2021-07-27 | 联华电子股份有限公司 | 半导体结构及其制作方法 |
| US9904758B2 (en) * | 2016-05-18 | 2018-02-27 | Samsung Electronics Co., Ltd. | Using deep sub-micron stress effects and proximity effects to create a high performance standard cell |
| WO2018063194A1 (en) * | 2016-09-28 | 2018-04-05 | Intel Corporation | Systems, methods and devices for isolation for subfin leakage |
| US10276693B1 (en) * | 2017-10-31 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10374089B2 (en) | 2017-12-22 | 2019-08-06 | International Business Machines Corporation | Tensile strain in NFET channel |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6806151B2 (en) | 2001-12-14 | 2004-10-19 | Texas Instruments Incorporated | Methods and apparatus for inducing stress in a semiconductor device |
| US6887751B2 (en) | 2003-09-12 | 2005-05-03 | International Business Machines Corporation | MOSFET performance improvement using deformation in SOI structure |
| US8450806B2 (en) * | 2004-03-31 | 2013-05-28 | International Business Machines Corporation | Method for fabricating strained silicon-on-insulator structures and strained silicon-on insulator structures formed thereby |
| JP2007088158A (ja) * | 2005-09-21 | 2007-04-05 | Toshiba Corp | 半導体装置およびその製造方法 |
| US20070257310A1 (en) | 2006-05-02 | 2007-11-08 | Honeywell International Inc. | Body-tied MOSFET device with strained active area |
| US7462916B2 (en) | 2006-07-19 | 2008-12-09 | International Business Machines Corporation | Semiconductor devices having torsional stresses |
| US20080121948A1 (en) | 2006-08-16 | 2008-05-29 | International Business Machines Corporation | FINFET drive strength de-quantization using multiple orientation fins |
| US8623728B2 (en) | 2009-07-28 | 2014-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming high germanium concentration SiGe stressor |
| US8518757B2 (en) | 2010-02-18 | 2013-08-27 | International Business Machines Corporation | Method of fabricating strained semiconductor structures from silicon-on-insulator (SOI) |
| WO2011121776A1 (ja) | 2010-03-31 | 2011-10-06 | 株式会社 東芝 | 半導体装置の製造方法 |
| US8278175B2 (en) | 2010-06-10 | 2012-10-02 | International Business Machines Corporation | Compressively stressed FET device structures |
| CN101924107B (zh) * | 2010-07-15 | 2012-09-26 | 电子科技大学 | 一种应力增强的cmos晶体管结构 |
| US8647935B2 (en) | 2010-12-17 | 2014-02-11 | International Business Machines Corporation | Buried oxidation for enhanced mobility |
| US8492235B2 (en) * | 2010-12-29 | 2013-07-23 | Globalfoundries Singapore Pte. Ltd. | FinFET with stressors |
| US8981481B2 (en) | 2012-06-28 | 2015-03-17 | Intel Corporation | High voltage three-dimensional devices having dielectric liners |
| US8823060B1 (en) | 2013-02-20 | 2014-09-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for inducing strain in FinFET channels |
| US8969155B2 (en) * | 2013-05-10 | 2015-03-03 | International Business Machines Corporation | Fin structure with varying isolation thickness |
-
2014
- 2014-05-19 US US14/281,660 patent/US9306066B2/en not_active Expired - Fee Related
-
2015
- 2015-02-17 WO PCT/US2015/016081 patent/WO2015130507A1/en not_active Ceased
- 2015-02-17 JP JP2016552321A patent/JP2017506830A/ja active Pending
- 2015-02-17 EP EP15710619.6A patent/EP3111481A1/en not_active Withdrawn
- 2015-02-17 CN CN201580010571.6A patent/CN106068565B/zh not_active Expired - Fee Related
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