JP2017506000A - Uv光検出器を製造する方法 - Google Patents
Uv光検出器を製造する方法 Download PDFInfo
- Publication number
- JP2017506000A JP2017506000A JP2016549446A JP2016549446A JP2017506000A JP 2017506000 A JP2017506000 A JP 2017506000A JP 2016549446 A JP2016549446 A JP 2016549446A JP 2016549446 A JP2016549446 A JP 2016549446A JP 2017506000 A JP2017506000 A JP 2017506000A
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- Prior art keywords
- photodetector
- metal
- ligand
- precursor
- manufacturing
- Prior art date
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- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims description 21
- 239000002243 precursor Substances 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000003446 ligand Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 18
- 229910044991 metal oxide Inorganic materials 0.000 claims description 15
- 150000004706 metal oxides Chemical class 0.000 claims description 15
- 229910052733 gallium Inorganic materials 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 12
- 239000011701 zinc Substances 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910021645 metal ion Inorganic materials 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical group [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 229910001195 gallium oxide Inorganic materials 0.000 claims 1
- 239000012705 liquid precursor Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 12
- 239000006096 absorbing agent Substances 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 239000007791 liquid phase Substances 0.000 abstract description 3
- 239000002250 absorbent Substances 0.000 abstract description 2
- 230000002745 absorbent Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 22
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 15
- 239000000976 ink Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 12
- 230000004044 response Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 7
- 238000000137 annealing Methods 0.000 description 7
- -1 methoxyimino Chemical group 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 6
- 239000002105 nanoparticle Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- 238000005118 spray pyrolysis Methods 0.000 description 5
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000002835 absorbance Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(iii) oxide Chemical compound O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000002070 nanowire Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000012707 chemical precursor Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- LHENQXAPVKABON-UHFFFAOYSA-N 1-methoxypropan-1-ol Chemical compound CCC(O)OC LHENQXAPVKABON-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N Propionic acid Chemical compound CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 239000002127 nanobelt Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- NOGDCTMYKWGZPZ-UHFFFAOYSA-N 2-methoxyiminopropanoic acid Chemical compound CON=C(C)C(O)=O NOGDCTMYKWGZPZ-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 201000004569 Blindness Diseases 0.000 description 1
- FERIUCNNQQJTOY-UHFFFAOYSA-M Butyrate Chemical compound CCCC([O-])=O FERIUCNNQQJTOY-UHFFFAOYSA-M 0.000 description 1
- FYRYVGMEFVLHRU-UHFFFAOYSA-K CON=C(C(=O)[O-])C.CON=C(C(=O)[O-])C.CON=C(C(=O)[O-])C.[In+3] Chemical compound CON=C(C(=O)[O-])C.CON=C(C(=O)[O-])C.CON=C(C(=O)[O-])C.[In+3] FYRYVGMEFVLHRU-UHFFFAOYSA-K 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 208000000453 Skin Neoplasms Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000004703 alkoxides Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- RJMMFJHMVBOLGY-UHFFFAOYSA-N indium(3+) Chemical compound [In+3] RJMMFJHMVBOLGY-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000004790 ingeo Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910003455 mixed metal oxide Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- WLZCAHBBQPTPRQ-UHFFFAOYSA-N n-hydroxy-2-methylpropanamide Chemical compound CC(C)C(=O)NO WLZCAHBBQPTPRQ-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000002524 organometallic group Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 125000003595 primary aliphatic amine group Chemical group 0.000 description 1
- OGHBATFHNDZKSO-UHFFFAOYSA-N propan-2-olate Chemical compound CC(C)[O-] OGHBATFHNDZKSO-UHFFFAOYSA-N 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000005619 secondary aliphatic amines Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 201000000849 skin cancer Diseases 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 150000003510 tertiary aliphatic amines Chemical class 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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Abstract
Description
光検出器は、入射する電磁放射線に応答し、それによって入射する放射線の強度の測定を可能にするデバイスとして広く定義される。光検出器は、典型的にはある種の光伝導性デバイスおよび外部の測定回路類を含む。
金属酸化物薄膜を、ゾル−ゲルを使用して容易に生成することができる。ゾル−ゲルフィルムの真空堆積したフィルムに対する比較によって、溶液加工したデバイスが改善された性能を有し得ることが示される(J. Vac. Sci. Technol. B 30, 031206, 2012)。ゾル−ゲル堆積後の焼きなまし条件を調整することによって、様々なナノ構造体をアクセスすることができ、それは、垂直に整列したZnO NWを含む(Bai et al., Current Applied Physics 13 (2013) 165e169)。
− 堆積した組成物を加工し、UV光検出器材料を得、および、
− 電極を光検出器材料に供給する。
なお本発明の別の態様は、本発明のプロセスによって作成されたUV検出器に関する。
本発明は、深UV光検出器における使用に適している金属酸化物薄膜、例えばIZOおよびGa2O3薄膜の生成のための、金属オキシメートおよび金属ヒドロキサメート前駆体の使用を特に開示する。
本発明に従って作成した光検出器の1つの態様を、図1に描写する。光検出器は、外部回路に接続した電極(任意に互いにかみ合った)を有するデバイスを含む。外部回路は、典型的にはバイアス(電圧)源および測定機器、例えば流速計を含む。好ましい態様において、源は、5〜25Vの範囲内で動作する電圧源である。流速計は、任意の好適に感受性の流速計であり得る。動作において、光子(入射光の形態において)は、デバイスの活性な半導体表面を打つ。好適な波長の光子は吸収され、電子正孔対を生じる。デバイスの電気伝導性は、光子束(秒あたりの光子の数)に比例して増大する。
本発明のプロセスについて前駆体組成物において使用する液体担体は、好ましくは有機溶媒、より好ましくはジメチルホルムアミド(DMF)、ジメチルスルホキシド(DMSO)、アルコール(例えばエタノール、ブタノール、2−メトキシエタノール、ジエチレングリコール)、N,N,ジメチルホルムアミドまたはそれらの、および他の溶媒との混合物を含む。
式中、R1は、C1〜C10脂肪族、オレフィン系または芳香族基のいずれかを表し、R2は、H原子、C1〜C10アルキル鎖またはフェニル基のいずれかを表し、mは、n〜4nの数である。特に好ましいのは、R1=メチル、エチル、n−プロピル、i−プロピルおよびtert−ブチル、ならびにR2=H、メチルおよびエチルである。Mは、族2、13もしくは14 PSEの元素または遷移金属のいずれかを表し、nは、少なくとも1(例えば1、2、3、好ましくは1)であり、Xは、負に荷電した配位子、例えば水酸化物もしくはアルコキシド基、または末端もしくは架橋オキソ配位子を表し、oは、0〜2nの数であり、Yは、荷電していない供与体配位子、例えば水、アルコール、第一、第二もしくは第三脂肪族アミンまたはピリジンを表し、ならびにpは、0〜2nの数である。好ましい金属ヒドロキサメートは、式(R1C(=O)NR2O)mMYpで表される。前駆体としてのヒドロキサマト配位子と組み合わせにおける金属は、好ましくはアルミニウム、ガリウム、カドミウム、銅、ゲルマニウム、ネオジム、ルテニウム、マグネシウム、ハフニウム、インジウム、銀、スズ、ジルコニウムおよび亜鉛、好ましくは銅、インジウム、ガリウム、インジウム、亜鉛、アルミニウム、ゲルマニウムまたはスズから選択される。
例1。インジウムおよび亜鉛オキシメートを含むインクをスピンコートすることにより形成した酸化インジウム亜鉛(IZO)活性層を備えたUV光検出器の形成
ガラスバイアル中で、48.0mgの亜鉛ビス(2−メトキシイミノプロパノエート)を、3mlのメトキシプロパノールに溶解した。別個のバイアル中で、125.5mgのインジウムトリス(2−メトキシイミノプロパノエート)を、3mlのメトキシプロパノールに溶解した。溶液を、透明になるまで短時間超音波処理した。0.5mlの各溶液を、新たなガラスバイアル中で合わせて、5:2比率でのIn:Znを有するオキシメートの3wt%溶液を達成する。
ガラスバイアル中で、282mgのガリウムトリス(2−メトキシイミノプロパノエート)を、3.6mlのメトキシエタノールに溶解して、オキシメートの4wt%溶液を達成した。混合物を、透明になるまで短時間超音波処理した。
図1は、250℃で焼きなました後のGa2O3フィルムの吸光度スペクトルをフィルム厚さの関数として描写する。石英基板を、基準値として使用した。
図4において、暗状態におけるIV曲線と比較しての、254nmでの照射の際のGa2O3フィルムのIV応答を描写する。
ガラスバイアル中で、144mgのガリウムトリス(N−メチル−アセトヒドロキサメート)を、3.6mlのメトキシエタノールに溶解して、ヒドロキサメートの4wt%溶液を達成した。溶液を、透明になるまで短時間超音波処理した。インクを、清浄な石英スライド上に、層あたり50μLのインクおよび2000rpmの速度を使用してスピンコートした。各層の後、フィルムを350℃で4分間焼きなまして、酸化ガリウム(III)を含む半導体材料を得た。
Claims (10)
- UV光検出器を製造する方法であって、以下のステップ
− 液体担体、金属イオンを含む液体組成物の堆積、ここで金属イオンの1種以上は、オキシメートおよびヒドロキサメートから選択された配位子に結合する、
− 堆積した組成物を加工し、UV光検出器材料を得ること、および
− 電極を光検出器材料に提供すること
を含む、前記方法。 - 堆積した組成物を加工することが液体担体を蒸発させ、任意に残留物質を加熱することを含むことを特徴とする、請求項1に記載のUV光検出器を製造する方法。
- 堆積した組成物を加工することが酸素の存在下で加熱することを含むことを特徴とする、請求項1または2に記載のUV光検出器を製造する方法。
- 堆積した組成物を加工することが150〜600℃の温度に加熱することを含むことを特徴とする、請求項1〜3のいずれか一項に記載のUV光検出器を製造する方法。
- オキシメートおよびヒドロキサメートから選択された配位子に結合する金属イオンが元素Ga、In、Zn、Al、Be、Mg、Sn、Cu、Ni、TiまたはMnから選択されることを特徴とする、請求項1〜4のいずれか一項に記載のUV光検出器を製造する方法。
- 液体組成物がオキシメート配位子を含むことを特徴とする、請求項1〜5のいずれか一項に記載のUV光検出器を製造する方法。
- 液体組成物がヒドロキサメート配位子を含むことを特徴とする、請求項1〜6のいずれか一項に記載のUV光検出器を製造する方法。
- 印刷されたUV光検出器であって、
基板、
金属酸化物の印刷された層、および
酸化物の層に接続された1対の電極、ここで電極は、入射するUV光が電極間の金属酸化物の層によって吸収され得るように構成される、
を含む、前記印刷されたUV光検出器。 - 酸化物の層が酸化ガリウムまたは酸化インジウム亜鉛であることを特徴とする、請求項8に記載の印刷されたUV検出器。
- 液体担体および1つ以上の配位子を有する金属前駆体を含み、ここで配位子がオキシメートまたはヒドロキサメート配位子を含む組成物であって、金属前駆体が金属インジウムおよびスズの混合物であることを特徴とする、前記組成物。
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JP2013530540A (ja) * | 2010-06-29 | 2013-07-25 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 半導体フィルムの調製 |
WO2013110434A1 (de) * | 2012-01-27 | 2013-08-01 | Merck Patent Gmbh | Verfahren zur herstellung elektrisch halbleitender oder leitender schichten mit verbesserter leitfähigkeit |
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US9112074B2 (en) * | 2013-03-22 | 2015-08-18 | University Of Central Florida Research Foundation, Inc. | UV photodetectors having semiconductor metal oxide layer |
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KR20160118286A (ko) | 2016-10-11 |
CN105934535A (zh) | 2016-09-07 |
EP3099838A1 (en) | 2016-12-07 |
US20170170345A1 (en) | 2017-06-15 |
WO2015113737A1 (en) | 2015-08-06 |
US10431704B2 (en) | 2019-10-01 |
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