JP2017505545A - バックゲートを有し、パンチスルーなしで、フィン高さのばらつきを減少させたＦｉｎＦＥＴ - Google Patents

バックゲートを有し、パンチスルーなしで、フィン高さのばらつきを減少させたＦｉｎＦＥＴ Download PDF

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JP2017505545A
JP2017505545A JP2016550526A JP2016550526A JP2017505545A JP 2017505545 A JP2017505545 A JP 2017505545A JP 2016550526 A JP2016550526 A JP 2016550526A JP 2016550526 A JP2016550526 A JP 2016550526A JP 2017505545 A JP2017505545 A JP 2017505545A
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finfet
layer
semiconductor
band gap
type
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JP2017505545A5 (enExample
Inventor
ビン・ヤン
シア・リ
プル・チダムバラム
チョー・フェイ・イェプ
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クアルコム，インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6215—Fin field-effect transistors [FinFET] having multiple independently-addressable gate electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6211—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6878—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using multi-gate field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0054—Gating switches, e.g. pass gates

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2016550526A 2014-02-12 2015-02-11 バックゲートを有し、パンチスルーなしで、フィン高さのばらつきを減少させたＦｉｎＦＥＴ Pending JP2017505545A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/179,311 2014-02-12
US14/179,311 US9236483B2 (en) 2014-02-12 2014-02-12 FinFET with backgate, without punchthrough, and with reduced fin height variation
PCT/US2015/015426 WO2015123305A1 (en) 2014-02-12 2015-02-11 Finfet with backgate, without punchthrough, and with reduced fin height variation

Publications (2)

Publication Number Publication Date
JP2017505545A true JP2017505545A (ja) 2017-02-16
JP2017505545A5 JP2017505545A5 (enExample) 2018-03-08

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JP2016550526A Pending JP2017505545A (ja) 2014-02-12 2015-02-11 バックゲートを有し、パンチスルーなしで、フィン高さのばらつきを減少させたＦｉｎＦＥＴ

Country Status (5)

Country Link
US (1) US9236483B2 (enExample)
EP (1) EP3105796A1 (enExample)
JP (1) JP2017505545A (enExample)
CN (1) CN105981174A (enExample)
WO (1) WO2015123305A1 (enExample)

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EP3314666A4 (en) 2015-06-26 2019-02-13 INTEL Corporation SOURCE-DRAN-SPACER WITH HIGH-MOBILE SEMICONDUCTOR
US10446685B2 (en) 2015-09-25 2019-10-15 Intel Corporation High-electron-mobility transistors with heterojunction dopant diffusion barrier
US10388764B2 (en) 2015-09-25 2019-08-20 Intel Corporation High-electron-mobility transistors with counter-doped dopant diffusion barrier
CN108028281B (zh) 2015-09-25 2022-04-15 英特尔公司 具有带偏移半导体源极/漏极衬垫的高迁移率场效应晶体管
WO2017218015A1 (en) 2016-06-17 2017-12-21 Intel Corporation High-mobility field effect transistors with wide bandgap fin cladding
US20180337228A1 (en) * 2017-05-18 2018-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Novel seal ring for iii-v compound semiconductor-based devices
US10872794B2 (en) 2017-06-20 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Automatic in-line inspection system
WO2019005111A1 (en) * 2017-06-30 2019-01-03 Intel Corporation VARIOUS TRANSISTOR CHANNEL MATERIALS ACTIVATED BY A REVERSE GRADIENT GERMANIUM THIN LAYER
US20190371891A1 (en) * 2018-06-01 2019-12-05 Qualcomm Incorporated Bulk layer transfer based switch with backside silicidation
US10756205B1 (en) 2019-02-13 2020-08-25 International Business Machines Corporation Double gate two-dimensional material transistor

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JP2007287913A (ja) * 2006-04-17 2007-11-01 Matsushita Electric Ind Co Ltd 電界効果型トランジスタ及びその製造方法
US20130011983A1 (en) * 2011-07-07 2013-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. In-Situ Doping of Arsenic for Source and Drain Epitaxy
US20130056795A1 (en) * 2011-09-06 2013-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET Design Controlling Channel Thickness
JP2013513250A (ja) * 2009-12-23 2013-04-18 インテル コーポレイション 非平面ゲルマニウム量子井戸デバイス

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US7411252B2 (en) 2005-06-21 2008-08-12 International Business Machines Corporation Substrate backgate for trigate FET
DE102005059231B4 (de) 2005-12-12 2011-01-13 Infineon Technologies Ag Verfahren zum Herstellen eines Verbindungshalbleiter-Feldeffekttransistors mit einer Fin-Struktur und Verbindungshalbleiter-Feldeffekttransistor mit einer Fin-Struktur
US7569869B2 (en) 2007-03-29 2009-08-04 Intel Corporation Transistor having tensile strained channel and system including same
US7485520B2 (en) 2007-07-05 2009-02-03 International Business Machines Corporation Method of manufacturing a body-contacted finfet
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JP2002110963A (ja) * 2000-09-28 2002-04-12 Toshiba Corp 半導体装置
JP2007287913A (ja) * 2006-04-17 2007-11-01 Matsushita Electric Ind Co Ltd 電界効果型トランジスタ及びその製造方法
JP2013513250A (ja) * 2009-12-23 2013-04-18 インテル コーポレイション 非平面ゲルマニウム量子井戸デバイス
US20130011983A1 (en) * 2011-07-07 2013-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. In-Situ Doping of Arsenic for Source and Drain Epitaxy
US20130056795A1 (en) * 2011-09-06 2013-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET Design Controlling Channel Thickness

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Publication number Publication date
US9236483B2 (en) 2016-01-12
EP3105796A1 (en) 2016-12-21
US20150228795A1 (en) 2015-08-13
CN105981174A (zh) 2016-09-28
WO2015123305A1 (en) 2015-08-20

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