CN105981174A - 具有背栅、无穿通且具有减小的鳍高度变化的FinFET - Google Patents

具有背栅、无穿通且具有减小的鳍高度变化的FinFET Download PDF

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Publication number
CN105981174A
CN105981174A CN201580007861.5A CN201580007861A CN105981174A CN 105981174 A CN105981174 A CN 105981174A CN 201580007861 A CN201580007861 A CN 201580007861A CN 105981174 A CN105981174 A CN 105981174A
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CN
China
Prior art keywords
layer
finfet
semiconductor
bandgap
type
Prior art date
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Pending
Application number
CN201580007861.5A
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English (en)
Chinese (zh)
Inventor
B·杨
X·李
P·齐达姆巴兰姆
C·F·耶普
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Qualcomm Inc
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Qualcomm Inc
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Filing date
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Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN105981174A publication Critical patent/CN105981174A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6215—Fin field-effect transistors [FinFET] having multiple independently-addressable gate electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6211—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6878—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using multi-gate field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0054—Gating switches, e.g. pass gates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN201580007861.5A 2014-02-12 2015-02-11 具有背栅、无穿通且具有减小的鳍高度变化的FinFET Pending CN105981174A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/179,311 US9236483B2 (en) 2014-02-12 2014-02-12 FinFET with backgate, without punchthrough, and with reduced fin height variation
US14/179,311 2014-02-12
PCT/US2015/015426 WO2015123305A1 (en) 2014-02-12 2015-02-11 Finfet with backgate, without punchthrough, and with reduced fin height variation

Publications (1)

Publication Number Publication Date
CN105981174A true CN105981174A (zh) 2016-09-28

Family

ID=52577996

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580007861.5A Pending CN105981174A (zh) 2014-02-12 2015-02-11 具有背栅、无穿通且具有减小的鳍高度变化的FinFET

Country Status (5)

Country Link
US (1) US9236483B2 (enExample)
EP (1) EP3105796A1 (enExample)
JP (1) JP2017505545A (enExample)
CN (1) CN105981174A (enExample)
WO (1) WO2015123305A1 (enExample)

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TWI764910B (zh) * 2017-05-18 2022-05-21 台灣積體電路製造股份有限公司 半導體裝置及其形成方法

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US10388764B2 (en) 2015-09-25 2019-08-20 Intel Corporation High-electron-mobility transistors with counter-doped dopant diffusion barrier
CN108028281B (zh) 2015-09-25 2022-04-15 英特尔公司 具有带偏移半导体源极/漏极衬垫的高迁移率场效应晶体管
DE112015006945T5 (de) * 2015-09-25 2018-06-21 Intel Corporation Transistoren mit hoher Elektronenbeweglichkeit mit Heteroübergang-Dotierstoffdiffusionsbarriere
US10957769B2 (en) 2016-06-17 2021-03-23 Intel Corporation High-mobility field effect transistors with wide bandgap fin cladding
US10872794B2 (en) 2017-06-20 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Automatic in-line inspection system
US11404575B2 (en) * 2017-06-30 2022-08-02 Intel Corporation Diverse transistor channel materials enabled by thin, inverse-graded, germanium-based layer
US20190371891A1 (en) * 2018-06-01 2019-12-05 Qualcomm Incorporated Bulk layer transfer based switch with backside silicidation
US10756205B1 (en) 2019-02-13 2020-08-25 International Business Machines Corporation Double gate two-dimensional material transistor

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US20110051535A1 (en) * 2009-09-02 2011-03-03 Qualcomm Incorporated Fin-Type Device System and Method
US20110068407A1 (en) * 2009-09-24 2011-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. Germanium FinFETs with Metal Gates and Stressors
CN102983165A (zh) * 2011-09-06 2013-03-20 台湾积体电路制造股份有限公司 控制沟道厚度的FinFET设计

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US20110051535A1 (en) * 2009-09-02 2011-03-03 Qualcomm Incorporated Fin-Type Device System and Method
US20110068407A1 (en) * 2009-09-24 2011-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. Germanium FinFETs with Metal Gates and Stressors
CN102983165A (zh) * 2011-09-06 2013-03-20 台湾积体电路制造股份有限公司 控制沟道厚度的FinFET设计

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI764910B (zh) * 2017-05-18 2022-05-21 台灣積體電路製造股份有限公司 半導體裝置及其形成方法

Also Published As

Publication number Publication date
WO2015123305A1 (en) 2015-08-20
EP3105796A1 (en) 2016-12-21
JP2017505545A (ja) 2017-02-16
US9236483B2 (en) 2016-01-12
US20150228795A1 (en) 2015-08-13

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