JP2017505464A - 感光性ポリイミドをマイクロ波処理する方法 - Google Patents

感光性ポリイミドをマイクロ波処理する方法 Download PDF

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Publication number
JP2017505464A
JP2017505464A JP2016563899A JP2016563899A JP2017505464A JP 2017505464 A JP2017505464 A JP 2017505464A JP 2016563899 A JP2016563899 A JP 2016563899A JP 2016563899 A JP2016563899 A JP 2016563899A JP 2017505464 A JP2017505464 A JP 2017505464A
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film
pspi
curing
photosensitive
oxygen
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Japanese (ja)
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JP2017505464A5 (https=
Inventor
ロバート エル ハバード
ロバート エル ハバード
イフティカル アハマド
イフティカル アハマド
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2017505464A publication Critical patent/JP2017505464A/ja
Publication of JP2017505464A5 publication Critical patent/JP2017505464A5/ja
Priority to JP2020003625A priority Critical patent/JP7504595B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254—After-treatment
    • B05D3/029—After-treatment with microwaves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12—Chemical modification
    • C08J7/123—Treatment by wave energy or particle radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2505/00—Polyamides
    • B05D2505/50—Polyimides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma & Fusion (AREA)
  • Engineering & Computer Science (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2016563899A 2014-01-13 2015-01-13 感光性ポリイミドをマイクロ波処理する方法 Pending JP2017505464A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2020003625A JP7504595B2 (ja) 2014-01-13 2020-01-14 感光性ポリイミドをマイクロ波処理する方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461964748P 2014-01-13 2014-01-13
US61/964,748 2014-01-13
PCT/US2015/011107 WO2015106234A1 (en) 2014-01-13 2015-01-13 Method for microwave processing of photosensitive polyimides

Related Child Applications (1)

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JP2020003625A Division JP7504595B2 (ja) 2014-01-13 2020-01-14 感光性ポリイミドをマイクロ波処理する方法

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JP2017505464A true JP2017505464A (ja) 2017-02-16
JP2017505464A5 JP2017505464A5 (https=) 2018-03-01

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JP2016563899A Pending JP2017505464A (ja) 2014-01-13 2015-01-13 感光性ポリイミドをマイクロ波処理する方法
JP2020003625A Active JP7504595B2 (ja) 2014-01-13 2020-01-14 感光性ポリイミドをマイクロ波処理する方法
JP2022080732A Pending JP2022113685A (ja) 2014-01-13 2022-05-17 感光性ポリイミドをマイクロ波処理する方法

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JP2022080732A Pending JP2022113685A (ja) 2014-01-13 2022-05-17 感光性ポリイミドをマイクロ波処理する方法

Country Status (6)

Country Link
US (2) US9519221B2 (https=)
JP (3) JP2017505464A (https=)
KR (1) KR101842691B1 (https=)
CN (2) CN105940347B (https=)
SG (2) SG10201903646WA (https=)
WO (1) WO2015106234A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022113685A (ja) * 2014-01-13 2022-08-04 アプライド マテリアルズ インコーポレイテッド 感光性ポリイミドをマイクロ波処理する方法

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JP2019118626A (ja) * 2017-12-29 2019-07-22 株式会社三洋物産 遊技機
JP2019122460A (ja) * 2018-01-12 2019-07-25 株式会社三洋物産 遊技機
JP2019136397A (ja) * 2018-02-14 2019-08-22 株式会社三洋物産 遊技機
JP2019136395A (ja) * 2018-02-14 2019-08-22 株式会社三洋物産 遊技機
JP2019136400A (ja) * 2018-02-14 2019-08-22 株式会社三洋物産 遊技機
JP2019136398A (ja) * 2018-02-14 2019-08-22 株式会社三洋物産 遊技機
JP2019136396A (ja) * 2018-02-14 2019-08-22 株式会社三洋物産 遊技機
JP2019136399A (ja) * 2018-02-14 2019-08-22 株式会社三洋物産 遊技機
JP2019136401A (ja) * 2018-02-14 2019-08-22 株式会社三洋物産 遊技機
CN108582606B (zh) * 2018-04-13 2020-07-03 南京航空航天大学 大厚度复合材料微波固化工艺方法
US12048948B2 (en) * 2018-12-26 2024-07-30 Applied Materials, Inc. Methods for forming microwave tunable composited thin-film dielectric layer
EP4041803A4 (en) * 2019-10-04 2022-11-30 FUJIFILM Electronic Materials U.S.A., Inc. METHOD AND COMPOSITION FOR PLANARIZATION

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JPH05119478A (ja) * 1991-10-29 1993-05-18 Asahi Chem Ind Co Ltd ポリイミドパターンの製造方法
JPH05224419A (ja) * 1992-02-07 1993-09-03 Asahi Chem Ind Co Ltd ポリイミド微細パターンの形成方法
US6159666A (en) * 1998-01-14 2000-12-12 Fijitsu Limited Environmentally friendly removal of photoresists used in wet etchable polyimide processes
JP2000347401A (ja) * 1999-06-09 2000-12-15 Sumitomo Bakelite Co Ltd ポジ型感光性樹脂組成物の硬化方法及びその方法により製作された半導体装置
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JP2006308765A (ja) * 2005-04-27 2006-11-09 Hitachi Chemical Dupont Microsystems Ltd ネガ型感光性樹脂組成物、パターンの製造方法及び電子部品
JP2012150508A (ja) * 2012-04-05 2012-08-09 Hitachi Chem Co Ltd ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子デバイス

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JPH05119478A (ja) * 1991-10-29 1993-05-18 Asahi Chem Ind Co Ltd ポリイミドパターンの製造方法
JPH05224419A (ja) * 1992-02-07 1993-09-03 Asahi Chem Ind Co Ltd ポリイミド微細パターンの形成方法
US6159666A (en) * 1998-01-14 2000-12-12 Fijitsu Limited Environmentally friendly removal of photoresists used in wet etchable polyimide processes
JP2000347401A (ja) * 1999-06-09 2000-12-15 Sumitomo Bakelite Co Ltd ポジ型感光性樹脂組成物の硬化方法及びその方法により製作された半導体装置
JP2006030413A (ja) * 2004-07-13 2006-02-02 Hitachi Chemical Dupont Microsystems Ltd マイクロ波硬化用ポジ型感光性樹脂組成物、及びこれを用いた電子部品
JP2006308765A (ja) * 2005-04-27 2006-11-09 Hitachi Chemical Dupont Microsystems Ltd ネガ型感光性樹脂組成物、パターンの製造方法及び電子部品
JP2012150508A (ja) * 2012-04-05 2012-08-09 Hitachi Chem Co Ltd ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子デバイス

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022113685A (ja) * 2014-01-13 2022-08-04 アプライド マテリアルズ インコーポレイテッド 感光性ポリイミドをマイクロ波処理する方法

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Publication number Publication date
SG11201604992QA (en) 2016-07-28
CN111013967A (zh) 2020-04-17
US9519221B2 (en) 2016-12-13
US20150198890A1 (en) 2015-07-16
US10139728B2 (en) 2018-11-27
CN105940347A (zh) 2016-09-14
CN105940347B (zh) 2019-12-13
JP2020074023A (ja) 2020-05-14
SG10201903646WA (en) 2019-05-30
KR20160107282A (ko) 2016-09-13
JP2022113685A (ja) 2022-08-04
WO2015106234A1 (en) 2015-07-16
JP7504595B2 (ja) 2024-06-24
KR101842691B1 (ko) 2018-03-27
US20170090284A1 (en) 2017-03-30

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