JP2017227892A5 - - Google Patents
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- JP2017227892A5 JP2017227892A5 JP2017116554A JP2017116554A JP2017227892A5 JP 2017227892 A5 JP2017227892 A5 JP 2017227892A5 JP 2017116554 A JP2017116554 A JP 2017116554A JP 2017116554 A JP2017116554 A JP 2017116554A JP 2017227892 A5 JP2017227892 A5 JP 2017227892A5
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- 238000000034 method Methods 0.000 claims description 123
- 238000013461 design Methods 0.000 claims description 64
- 229920002120 photoresistant polymer Polymers 0.000 claims description 42
- 238000005530 etching Methods 0.000 claims description 40
- 238000012545 processing Methods 0.000 claims description 38
- 230000004907 flux Effects 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000001228 spectrum Methods 0.000 claims description 19
- 238000000206 photolithography Methods 0.000 claims description 10
- 238000000985 reflectance spectrum Methods 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 7
- 238000005326 angular distribution function Methods 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 238000010801 machine learning Methods 0.000 claims description 2
- 230000007935 neutral effect Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/188,910 | 2016-06-21 | ||
| US15/188,910 US10197908B2 (en) | 2016-06-21 | 2016-06-21 | Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017227892A JP2017227892A (ja) | 2017-12-28 |
| JP2017227892A5 true JP2017227892A5 (enExample) | 2018-02-15 |
Family
ID=60660150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017116554A Pending JP2017227892A (ja) | 2016-06-21 | 2017-06-14 | 物理学ベースのエッチングプロファイルモデリングフレームワークを用いた高速エッジ配置誤差予測によるフォトレジスト設計レイアウトパターン近接効果補正 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10197908B2 (enExample) |
| JP (1) | JP2017227892A (enExample) |
| KR (1) | KR102415463B1 (enExample) |
| CN (2) | CN107526864B (enExample) |
| SG (1) | SG10201705049VA (enExample) |
| TW (1) | TWI738796B (enExample) |
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| US10254641B2 (en) | 2016-12-01 | 2019-04-09 | Lam Research Corporation | Layout pattern proximity correction through fast edge placement error prediction |
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