JP2017188528A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2017188528A
JP2017188528A JP2016075046A JP2016075046A JP2017188528A JP 2017188528 A JP2017188528 A JP 2017188528A JP 2016075046 A JP2016075046 A JP 2016075046A JP 2016075046 A JP2016075046 A JP 2016075046A JP 2017188528 A JP2017188528 A JP 2017188528A
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JP
Japan
Prior art keywords
electrode member
plate
semiconductor device
power semiconductor
main surface
Prior art date
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Pending
Application number
JP2016075046A
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English (en)
Japanese (ja)
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JP2017188528A5 (enExample
Inventor
準 徳丸
Jun Tokumaru
準 徳丸
藤野 純司
Junji Fujino
純司 藤野
貴雅 岩井
Takamasa Iwai
貴雅 岩井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2016075046A priority Critical patent/JP2017188528A/ja
Publication of JP2017188528A publication Critical patent/JP2017188528A/ja
Publication of JP2017188528A5 publication Critical patent/JP2017188528A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45565Single coating layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664Palladium (Pd) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4846Connecting portions with multiple bonds on the same bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2016075046A 2016-04-04 2016-04-04 半導体装置 Pending JP2017188528A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016075046A JP2017188528A (ja) 2016-04-04 2016-04-04 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016075046A JP2017188528A (ja) 2016-04-04 2016-04-04 半導体装置

Publications (2)

Publication Number Publication Date
JP2017188528A true JP2017188528A (ja) 2017-10-12
JP2017188528A5 JP2017188528A5 (enExample) 2019-05-09

Family

ID=60045716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016075046A Pending JP2017188528A (ja) 2016-04-04 2016-04-04 半導体装置

Country Status (1)

Country Link
JP (1) JP2017188528A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021100199A1 (ja) * 2019-11-22 2021-05-27 三菱電機株式会社 半導体装置およびその製造方法ならびに電力変換装置
JP2022048877A (ja) * 2020-09-15 2022-03-28 株式会社東芝 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01156560U (enExample) * 1988-04-21 1989-10-27
JPH05315490A (ja) * 1992-05-07 1993-11-26 Fuji Electric Co Ltd 半導体素子
JP2007096004A (ja) * 2005-09-29 2007-04-12 Toshiba Corp 半導体装置
WO2015107871A1 (ja) * 2014-01-15 2015-07-23 パナソニックIpマネジメント株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01156560U (enExample) * 1988-04-21 1989-10-27
JPH05315490A (ja) * 1992-05-07 1993-11-26 Fuji Electric Co Ltd 半導体素子
JP2007096004A (ja) * 2005-09-29 2007-04-12 Toshiba Corp 半導体装置
WO2015107871A1 (ja) * 2014-01-15 2015-07-23 パナソニックIpマネジメント株式会社 半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021100199A1 (ja) * 2019-11-22 2021-05-27 三菱電機株式会社 半導体装置およびその製造方法ならびに電力変換装置
JPWO2021100199A1 (enExample) * 2019-11-22 2021-05-27
JP7237192B2 (ja) 2019-11-22 2023-03-10 三菱電機株式会社 半導体装置およびその製造方法ならびに電力変換装置
JP2022048877A (ja) * 2020-09-15 2022-03-28 株式会社東芝 半導体装置
JP7438071B2 (ja) 2020-09-15 2024-02-26 株式会社東芝 半導体装置

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