JP2017188528A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP2017188528A
JP2017188528A JP2016075046A JP2016075046A JP2017188528A JP 2017188528 A JP2017188528 A JP 2017188528A JP 2016075046 A JP2016075046 A JP 2016075046A JP 2016075046 A JP2016075046 A JP 2016075046A JP 2017188528 A JP2017188528 A JP 2017188528A
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electrode member
plate
semiconductor device
power semiconductor
substrate
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JP2017188528A5 (en
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準 徳丸
Jun Tokumaru
準 徳丸
藤野　純司
Junji Fujino
純司 藤野
貴雅 岩井
Takamasa Iwai
貴雅 岩井
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving connection reliability of a bonding part at a plate-like electrode member in a semiconductor device compared with the conventional art.SOLUTION: A semiconductor device has: a substrate 3 that has conductor patterns respectively on a first principal surface 3a and a second principal surface 3b opposed to each other; and a plate-like electrode member 1 that has a bonding region where a second surface 1b is bonded to the conductor pattern 31b on the first principal surface of the substrate. The plate-like electrode member has a recessed part 11 on its first surface, and has a protruding part 12 on its second surface. The recessed part and the protruding part are located in a projection region obtained by projecting the bonding region onto the first and second surfaces, in a thickness direction of the plate-like electrode member.SELECTED DRAWING: Figure 1A

Description

本発明は、半導体装置、特に電力半導体装置に関する。   The present invention relates to a semiconductor device, and more particularly to a power semiconductor device.

電気鉄道車両及び風力発電設備等の大電力を扱う電力半導体装置における内部配線として、板状の電極部材を用いることが多い。その理由は、アルミニウムなどを用いたワイヤボンド配線に比べて板状電極部材は、電流密度を高く設定できるためである。板状電極部材と基板の導体部との接続には、一般的にソルダペーストを用いたはんだ付けが用いられる。ソルダペーストには、被接合材表面の酸化被膜を除去する還元剤、ディスペンスなどで供給し易いように粘度調整するための増粘剤、及び揮発成分などが含まれており、はんだ付けの際の熱により、これらの成分は気体となり蒸発する。このような気体がはんだ中に残留することで空隙であるボイドとなり、接合部近傍に残留する。接合部にボイドが存在した場合には接合面積が減少し、接合部の接続信頼性が低下する場合がある。   In many cases, plate-like electrode members are used as internal wiring in power semiconductor devices that handle large amounts of power such as electric railway vehicles and wind power generation facilities. The reason is that the plate-like electrode member can set the current density higher than the wire bond wiring using aluminum or the like. In general, soldering using a solder paste is used to connect the plate electrode member and the conductor portion of the substrate. The solder paste contains a reducing agent that removes the oxide film on the surface of the material to be joined, a thickener for adjusting the viscosity so that it can be easily supplied by dispensing, and a volatile component. With heat, these components become gas and evaporate. When such gas remains in the solder, it becomes a void which is a void and remains in the vicinity of the joint. When a void exists in a junction part, a junction area reduces and the connection reliability of a junction part may fall.

電力半導体装置のはんだ接合部における接続信頼性の低下を防ぐ方法が特許文献１及び特許文献２に提案されている。   Patent Documents 1 and 2 propose a method for preventing a decrease in connection reliability at a solder joint portion of a power semiconductor device.

特開２０１５−０５０３４０号公報Japanese Patent Laying-Open No. 2015-050340 特開２０１０−０５０３６４号公報JP 2010-0050364 A

上記特許文献１では、はんだ接合部に対応して板状電極部材（端子）に突起を設けることで接合材厚を一定にして接続信頼性の確保を図っている。しかしながら、突起により端子におけるみかけの板厚が増加し、熱応力が増大して、接続信頼性を担保することができない。また、上記特許文献２では、板状電極部材（リード）に曲げ形状部分を設けることで、はんだフィレット高さを制御して接続信頼性の確保を意図している。しかしながらこの方法では、はんだ厚さを制御することはできない。   In the above-mentioned patent document 1, a projection is provided on a plate-like electrode member (terminal) corresponding to a solder joint portion, thereby securing a connection reliability by keeping the joint material thickness constant. However, the apparent plate thickness at the terminal increases due to the protrusion, and the thermal stress increases, so that connection reliability cannot be ensured. Further, in Patent Document 2, it is intended to secure the connection reliability by controlling the height of the solder fillet by providing a bent portion on the plate-like electrode member (lead). However, this method cannot control the solder thickness.

本発明は、上述したような問題点を解決するためになされたもので、半導体装置内の板状電極部材における接合部の接続信頼性を、従来に比べて向上可能な半導体装置を提供することを目的とする。   The present invention has been made to solve the above-described problems, and provides a semiconductor device capable of improving the connection reliability of a joint portion in a plate-like electrode member in a semiconductor device as compared with the conventional one. With the goal.

上記目的を達成するため、本発明は以下のように構成する。
即ち、本発明の一態様における半導体装置は、半導体素子実装用の基板であって、対向する第１主面と第２主面とにそれぞれ導体パターンを有する基板と、対向する第１面及び第２面を有し、上記第１主面における導体パターンに上記第２面を接合した接合領域を有する板状電極部材と、を備え、上記板状電極部材は、上記第１面に凹部を上記第２面に凸部をそれぞれ有し、この凹部及び凸部は、当該板状電極部材の厚み方向において上記接合領域を上記第１面及び上記第２面に投影した投影領域に位置することを特徴とする。 In order to achieve the above object, the present invention is configured as follows.
That is, a semiconductor device according to one embodiment of the present invention is a substrate for mounting a semiconductor element, which includes a substrate having a conductor pattern on each of a first main surface and a second main surface facing each other, and a first surface and a second surface facing each other. And a plate-like electrode member having a joining region obtained by joining the second surface to the conductor pattern on the first main surface, and the plate-like electrode member has a recess on the first surface. Each of the second surfaces has a convex portion, and the concave portion and the convex portion are located in a projection region obtained by projecting the joining region onto the first surface and the second surface in the thickness direction of the plate-like electrode member. Features.

本発明の一態様における半導体装置によれば、板状電極部材の第２面に凸部を設け、この第２面を基板の導体パターンに接合することから、凸部により、接合材厚さを一定以上にすることができ、接合材内にボイドが発生した場合でも接合材外へ排出することができる。また、凸部によって、接合材が薄くなる領域に対応して凹部を設けることで、凸部のみを設ける場合に比べて、見かけの板状電極部材の厚さを小さくすることができる。よって、板状電極部材と接合材との間に生じる熱応力を低減することができ、接合部の熱疲労寿命、ひいては接続信頼性を、従来に比べて向上することができる。   According to the semiconductor device of one embodiment of the present invention, the convex portion is provided on the second surface of the plate-like electrode member, and the second surface is joined to the conductor pattern of the substrate. Even if a void is generated in the bonding material, it can be discharged out of the bonding material. Further, by providing the concave portions corresponding to the regions where the bonding material is thinned by the convex portions, the apparent plate-like electrode member can be made thinner than when only the convex portions are provided. Therefore, the thermal stress generated between the plate-like electrode member and the bonding material can be reduced, and the thermal fatigue life of the bonded portion and thus the connection reliability can be improved as compared with the conventional case.

実施の形態１における電力半導体装置の断面図である。1 is a cross-sectional view of a power semiconductor device in a first embodiment. 図１Ａに示す電力半導体装置の平面図である。1B is a plan view of the power semiconductor device shown in FIG. 1A. FIG. 実施の形態２における電力半導体装置の断面図である。FIG. 6 is a cross-sectional view of a power semiconductor device in a second embodiment. 実施の形態３における電力半導体装置の断面図であり、板状電極部材に関する部分のみを示した図である。It is sectional drawing of the electric power semiconductor device in Embodiment 3, and is the figure which showed only the part regarding a plate-shaped electrode member. 図３Ａに示す電力半導体装置の平面図である。FIG. 3B is a plan view of the power semiconductor device shown in FIG. 3A. 図３Ａに示す電力半導体装置を封止した状態を示す断面図である。It is sectional drawing which shows the state which sealed the power semiconductor device shown to FIG. 3A. 実施の形態４における電力半導体装置の断面図であり、板状電極部材に関する部分のみを示した図である。It is sectional drawing of the electric power semiconductor device in Embodiment 4, and is the figure which showed only the part regarding a plate-shaped electrode member. 図５Ａに示す電力半導体装置の平面図である。FIG. 5B is a plan view of the power semiconductor device shown in FIG. 5A. 実施の形態５における電力半導体装置の断面図であり、板状電極部材に関する部分のみを示した図である。It is sectional drawing of the electric power semiconductor device in Embodiment 5, and is the figure which showed only the part regarding a plate-shaped electrode member. 図６Ａに示す電力半導体装置の平面図である。FIG. 6B is a plan view of the power semiconductor device shown in FIG. 6A. 図１に示す凹部及び凸部を説明するための断面図であり、板状電極部材に関する部分のみを示した図である。It is sectional drawing for demonstrating the recessed part and convex part which are shown in FIG. 1, and is the figure which showed only the part regarding a plate-shaped electrode member. 図７Ａに示す断面図の平面図である。It is a top view of sectional drawing shown to FIG. 7A.

実施形態である半導体装置について、図を参照しながら以下に説明する。尚、各図において、同一又は同様の構成部分については同じ符号を付している。また、以下の説明が不必要に冗長になるのを避け当業者の理解を容易にするため、既によく知られた事項の詳細説明及び実質的に同一の構成に対する重複説明を省略する場合がある。また、以下の説明及び添付図面の内容は、特許請求の範囲に記載の主題を限定することを意図するものではない。   A semiconductor device according to an embodiment will be described below with reference to the drawings. In each figure, the same or similar components are denoted by the same reference numerals. In addition, in order to avoid the following description from becoming unnecessarily redundant and to facilitate understanding by those skilled in the art, a detailed description of already well-known matters and a duplicate description of substantially the same configuration may be omitted. . Further, the contents of the following description and the accompanying drawings are not intended to limit the subject matter described in the claims.

また以下の各実施の形態では、大電流を扱うことに起因してより大きな応力が接合部に作用することから、より高い接続信頼性が要求される電力半導体装置を例に採る。しかしながら各実施形態における構成は、電力半導体装置用に限定するものではなく、通常電流を扱う一般的な半導体装置にも適用可能である。   Further, in each of the following embodiments, since a larger stress acts on the joint due to handling a large current, a power semiconductor device that requires higher connection reliability is taken as an example. However, the configuration in each embodiment is not limited to a power semiconductor device, but can be applied to a general semiconductor device that handles a normal current.

実施の形態１．
図１Ａ及び図１Ｂ（総称して図１と記す場合もある）には、本実施の形態１における電力半導体装置１０１の構成の一例が示されている。当該電力半導体装置１０１は、基本的構成部分として、板状電極部材１と、絶縁材料で形成された基板３と、電力半導体素子８とを有する。ここで金属製で短冊状の板状電極部材１は、対向する第１面１ａと第２面１ｂとを有する。基板３は、対向する第１主面３ａと第２主面３ｂとを有し、第１主面３ａ及び第２主面３ｂにはそれぞれ導体パターン３１が設けられている。第１主面３ａ側には電力半導体装置８及び板状電極部材１が、第２主面３ｂ側にはヒートスプレッダ５が接合される。 Embodiment 1 FIG.
1A and 1B (also collectively referred to as FIG. 1) show an example of the configuration of the power semiconductor device 101 according to the first embodiment. The power semiconductor device 101 includes a plate electrode member 1, a substrate 3 formed of an insulating material, and a power semiconductor element 8 as basic components. Here, the strip-like plate-like electrode member 1 made of metal has a first surface 1a and a second surface 1b facing each other. The substrate 3 has a first main surface 3a and a second main surface 3b facing each other, and a conductor pattern 31 is provided on each of the first main surface 3a and the second main surface 3b. The power semiconductor device 8 and the plate electrode member 1 are joined to the first main surface 3a side, and the heat spreader 5 is joined to the second main surface 3b side.

以下に説明する各実施の形態において、板状電極部材１は次の部材を意味する。即ち、電力半導体装置の外面には、モータなどの外部機器と接続するための端子が設けられるが、板状電極部材１は、この端子に該当する。また板状電極部材１は、一般的に通電によるジュール発熱を考慮して、上記端子となる部分から、電力半導体装置内における、以下で説明する導体パターン３１ｂとの接合部（接合領域１５）に至るまでの間、同じ断面積を有する部材であることが多い。また、上記端子となる部分から接合部までの間で、電磁ノイズ対策などのため、分岐する場合もある。このような分岐を有する形態では、分岐部分から上記接合部までの間が板状電極部材１に相当する。尚、後述の実施の形態４，５では、板状電極部材１に切欠き部を設けた構成を説明するが、この切欠き部は上記接合部に位置することから、上記分岐部分に該当するものではない。   In each embodiment described below, the plate-like electrode member 1 means the following member. That is, a terminal for connecting to an external device such as a motor is provided on the outer surface of the power semiconductor device, and the plate electrode member 1 corresponds to this terminal. The plate-like electrode member 1 generally takes into account Joule heat generation due to energization, from the portion serving as the terminal to a joint portion (joint region 15) with a conductor pattern 31b described below in the power semiconductor device. In many cases, the members have the same cross-sectional area. Further, there may be a branch between the portion serving as the terminal and the joint for electromagnetic noise countermeasures. In the form having such a branch, the portion from the branch portion to the joint corresponds to the plate electrode member 1. In Embodiments 4 and 5 to be described later, a configuration in which a notch portion is provided in the plate-like electrode member 1 will be described. Since the notch portion is located at the joint portion, it corresponds to the branch portion. It is not a thing.

また詳細後述するが、板状電極部材１は、特徴的構成部分の一つとして本実施の形態１では、第１面１ａに凹部１１を、第２面１ｂに凸部１２をそれぞれ有する。   As will be described in detail later, the plate-like electrode member 1 has a concave portion 11 on the first surface 1a and a convex portion 12 on the second surface 1b as one of the characteristic components in the first embodiment.

電力半導体装置８は、例えばＩＧＢＴ（絶縁ゲートバイポーラトランジスタ）あるいはダイオードなどが相当し、ダイボンド工程において一般的にはリフロー工法などを用いて、導体パターン３１における一方の導体パターン３１ａに第２接合材２２によって接合され、電気的接続が図られる。第２接合材２２は、例えばはんだである。また、この接合によって、電力半導体装置８とヒートスプレッダ５とは一体化され、電力半導体装置８がスイッチング動作する際に生じる熱を、ヒートスプレッダ５を介してさらに放熱器へと逃がすことが可能となる。   The power semiconductor device 8 corresponds to, for example, an IGBT (insulated gate bipolar transistor) or a diode, and the second bonding material 22 is formed on one conductor pattern 31a in the conductor pattern 31 by using a reflow method or the like in a die bonding process. Are joined to form an electrical connection. The second bonding material 22 is, for example, solder. Further, by this joining, the power semiconductor device 8 and the heat spreader 5 are integrated, and heat generated when the power semiconductor device 8 performs a switching operation can be further released to the radiator via the heat spreader 5.

また電力半導体装置８における電極は、例えばアルミニウムワイヤ６などを用いたワイヤボンディングにより、第１主面３ａに存在する、導体パターン３１における他方の導体パターン３１ｂに電気的接続される。
またこの導体パターン３１ｂには、板状電極部材１が第１接合材２１によって接合される。よって板状電極部材１は、導体パターン３１ｂとの接合領域１５を有する。尚、第１接合材２１は、一例として下記のように、主にはんだ合金から成るソルダペーストである。 The electrode in the power semiconductor device 8 is electrically connected to the other conductor pattern 31b in the conductor pattern 31 that exists on the first main surface 3a by wire bonding using, for example, an aluminum wire 6 or the like.
In addition, the plate electrode member 1 is joined to the conductor pattern 31 b by the first joining material 21. Therefore, the plate-shaped electrode member 1 has the joining area | region 15 with the conductor pattern 31b. As an example, the first bonding material 21 is a solder paste mainly made of a solder alloy as described below.

上述したように端子となる板状電極部材１の接続工程では、まずディスペンサーなどを用いて第１接合材２１が導体パターン３１ｂの必要箇所に供給される。このとき第１接合材２１上に板状電極部材１を配置する。次に、ホットプレートなどを用いて、ヒートスプレッダ５から入熱させて、第１接合材２１及び板状電極部材１を加熱する。第１接合材２１として、例えば、主にはんだ合金から成るソルダペーストを用いた場合、ソルダペーストは、はんだ合金、及び、高級カルボン酸あるいはアルコール類を成分とするフラックスであり、加熱により、第１接合材２１から揮発成分などが気体に変化し始める。さらに加熱を続けることで、第１接合材２１のはんだ合金が溶融し、導体パターン３１ｂ及び板状電極部材１へと濡れ広がり、両者間の接合が完了する。そして第１接合材２１が凝固するタイミングでボイド７が発生し、接合部近傍に残留する場合がある。   As described above, in the connection process of the plate-like electrode member 1 serving as a terminal, first, the first bonding material 21 is first supplied to a necessary portion of the conductor pattern 31b using a dispenser or the like. At this time, the plate electrode member 1 is disposed on the first bonding material 21. Next, using a hot plate or the like, heat is input from the heat spreader 5 to heat the first bonding material 21 and the plate electrode member 1. For example, when a solder paste mainly composed of a solder alloy is used as the first bonding material 21, the solder paste is a flux containing solder alloy and higher carboxylic acid or alcohol as a component. Volatile components and the like start to change from the bonding material 21 to gas. By further heating, the solder alloy of the first bonding material 21 is melted and spreads to the conductor pattern 31b and the plate-like electrode member 1, and the bonding between the two is completed. And the void 7 may generate | occur | produce at the timing which the 1st joining material 21 solidifies, and it may remain in the joining part vicinity.

本実施の形態１では、上述のように、板状電極部材１は、第１接合材２１にて導体パターン３１ｂと接合される接合領域１５、並びに、その第１面１ａに凹部１１、及び第２面１ｂに凸部１２をそれぞれ有する。この凹部１１及び凸部１２は、板状電極部材１の厚み方向１ｃにおいて接合領域１５を第１面１ａ及び第２面１ｂに投影した投影領域１７内に位置する。また図１Ａに示すように、板状電極部材１の厚み方向１ｃにおいて、板状電極部材１の厚さに対する凹部１１の深さ及び凸部１２の高さは、板状電極部材１の厚さと同等もしくは小さくしている。   In the first embodiment, as described above, the plate-like electrode member 1 includes the bonding region 15 bonded to the conductor pattern 31b by the first bonding material 21, the concave portion 11 and the first surface 1a. Each of the two surfaces 1b has a convex portion 12. The concave portion 11 and the convex portion 12 are located in a projection region 17 in which the joining region 15 is projected onto the first surface 1a and the second surface 1b in the thickness direction 1c of the plate-like electrode member 1. 1A, in the thickness direction 1c of the plate electrode member 1, the depth of the concave portion 11 and the height of the convex portion 12 with respect to the thickness of the plate electrode member 1 are the same as the thickness of the plate electrode member 1. Equal or smaller.

上述のように板状電極部材１の第２面１ｂに凸部１２を設け、この第２面１ｂを基板３の導体パターン３１ｂに接合することから、凸部１２により、第１接合材２１の厚さを一定以上にすることができ、第１接合材２１内にボイド７が発生した場合でも、第１接合材２１外へ排出することができる。したがって、板状電極部材１と導体パターン３１ｂとの間に十分な接合面積を確保することができ、従来に比べて接合部の接続信頼性を高めることができる。   As described above, the convex portion 12 is provided on the second surface 1b of the plate-like electrode member 1, and this second surface 1b is joined to the conductor pattern 31b of the substrate 3. The thickness can be made a certain value or more, and even when the void 7 is generated in the first bonding material 21, it can be discharged out of the first bonding material 21. Therefore, a sufficient bonding area can be ensured between the plate electrode member 1 and the conductor pattern 31b, and the connection reliability of the bonding portion can be increased as compared with the conventional case.

図７Ａ及び図７Ｂ（総称して、図７と記す場合もある。）に示すように、凸部１２の外周面側に存在する第１接合材２１の部材延在方向１ｄにおける長さ１３は、凸部１２を設けることで、板状電極部材１の凹凸加工前における長さと同等もしくは小さくなっている。このことで、凸部１２及び長さ１３に対応した板状電極部材１の領域に凹部１１を設けることで、凸部１２のみを備える場合よりも、板状電極部材１の見かけの厚さを薄くすることができる。よって板状電極部材１の剛性が下がることから、板状電極部材１と第１接合材２１との間に生じる熱応力を低減することができ、第１接合材２１の熱疲労寿命を延ばすことができる。したがって、接続信頼性の高い電力半導体装置１０１を得ることが可能となる。   As shown in FIG. 7A and FIG. 7B (generally referred to as FIG. 7), the length 13 in the member extending direction 1d of the first bonding material 21 existing on the outer peripheral surface side of the convex portion 12 is By providing the convex portion 12, the length of the plate electrode member 1 is equal to or smaller than the length before the uneven processing. Thus, by providing the concave portion 11 in the region of the plate electrode member 1 corresponding to the convex portion 12 and the length 13, the apparent thickness of the plate electrode member 1 can be reduced as compared with the case where only the convex portion 12 is provided. Can be thinned. Therefore, since the rigidity of the plate electrode member 1 is lowered, the thermal stress generated between the plate electrode member 1 and the first bonding material 21 can be reduced, and the thermal fatigue life of the first bonding material 21 can be extended. Can do. Therefore, the power semiconductor device 101 with high connection reliability can be obtained.

さらに凸部１２及び長さ１３に対応した板状電極部材１の領域では、第１接合材２１の厚みが板状電極部材１と同等もしくは薄くなっているので、第１接合材２１及び導体パターン３１ｂで発生した熱を効率よく大気中へ放出することも可能になる。   Further, in the region of the plate electrode member 1 corresponding to the convex portion 12 and the length 13, the thickness of the first bonding material 21 is equal to or thinner than that of the plate electrode member 1, so the first bonding material 21 and the conductor pattern It also becomes possible to efficiently release the heat generated in 31b into the atmosphere.

また、凹部１１及び凸部１２は、板状電極部材１の抜き加工を行う際に、一体的に成型することができるため、凸部１２のみを設ける場合よりも、生産性が高い。
凸部１２について、本実施の形態１では一例として半円球状としたが、これに限定するものではなく、バスタブ形状、角柱形状などの他の形状でもかまわない。
また凸部１２の半円球状の直径は、一例として板状電極部材１の板厚程度であるが、これに限定するものではない。 Moreover, since the recessed part 11 and the convex part 12 can be shape | molded integrally when performing the punching process of the plate-shaped electrode member 1, productivity is higher than the case where only the convex part 12 is provided.
In the first embodiment, the convex portion 12 has a semi-spherical shape as an example. However, the shape is not limited to this, and other shapes such as a bathtub shape and a prism shape may be used.
Moreover, although the hemispherical diameter of the convex part 12 is about the plate | board thickness of the plate-shaped electrode member 1 as an example, it is not limited to this.

また、第１接合材２１に作用する応力及び歪みを考慮すると、第１接合材２１が薄くなる領域、つまり図１Ａにおいて凹部１１を第１接合材２１に投影した部分は、できるだけ小さい方が良く、凹部１１及び凸部１２の板状電極部材１における幅方向１ｅ（図７Ｂ）の寸法は、凹部１１及び凸部１２の形状に関わらず、一例として板状電極部材１の幅を超えないものである。
また、凹部１１及び凸部１２を設ける場所は、第１接合材２１内であれば、どこに備えても良い。
また、ジュール発熱の観点から、凸部１２の突出高さ、及び凹部１１の凹み深さは、それぞれ板状電極部材１の、一例として板厚の５０％以下であるが、これに限定するものではない。
また、第１接合材２１として、はんだを用いる場合、はんだが濡れ広がる際に、隣接するワイヤボンド部などに付着することが懸念される場合には、はんだ接合部外周にソルダレジストを設けても良い。ソルダレジストとしては、エポキシ樹脂、アルミニウム、はんだの濡れない金属及びその酸化物、例えば酸化銅など、を用いることができる。 In consideration of the stress and strain acting on the first bonding material 21, the region where the first bonding material 21 is thin, that is, the portion where the recess 11 is projected onto the first bonding material 21 in FIG. 1A should be as small as possible. The dimensions of the concave electrode 11 and the convex part 12 in the width direction 1e (FIG. 7B) of the plate electrode member 1 do not exceed the width of the plate electrode member 1 as an example, regardless of the shape of the concave part 11 and the convex part 12. It is.
Further, the place where the concave portion 11 and the convex portion 12 are provided may be provided anywhere within the first bonding material 21.
From the viewpoint of Joule heat generation, the protruding height of the convex portion 12 and the concave depth of the concave portion 11 are 50% or less of the plate thickness of the plate-like electrode member 1, respectively, but are limited to this. is not.
Further, when solder is used as the first bonding material 21, when there is a concern that the solder adheres to an adjacent wire bond portion or the like when the solder spreads wet, a solder resist may be provided on the outer periphery of the solder bonding portion. good. As the solder resist, an epoxy resin, aluminum, a metal that does not wet solder and an oxide thereof, such as copper oxide, can be used.

第１接合材２１は、Ｓｎ−Ｓｂ系はんだ、Ｓｎ−Ｃｕ系はんだ、Ｓｎ−Ａｇ系はんだ、Ｓｎ−Ａｇ−Ｃｕ系はんだ、Ｓｎ−Ａｇ−Ｉｎ系はんだ、Ｓｎ−Ｚｎ系はんだ、Ｓｎ−Ｂｉ系はんだ、又は、Ｓｎ−Ｐｂ系はんだのいずれか、もしくは、これらを組み合わせたものを用いることができる。これらのはんだの場合、再溶融が可能という利点がある。
また、第１接合材２１は、一例として、第２接合材２２と同じ融点か、より低い融点のはんだである。これにより、第１接合材２１のはんだ付け中に、第２接合材２２が再溶融することが無くなるため、はんだボールの発生によるパターンショート、あるいは電力半導体素子の耐圧低下が発生しないという効果がある。
導体パターン３１ａ，３１ｂとしては銅、アルミニウム、Ｎｉ／Ａｕフラッシュめっき銅、Ｎｉめっき銅、Ｎｉめっきアルミニウム、Ｓｕめっき銅を用いることができる。
絶縁材料から形成される基板３として、紙フェノール、紙エポキシ、ガラスエポキシ、テフロン（登録商標）、ポリイミド、セラミック（ＡｌＮ、Ａｌ２Ｏ３、Ｓｉ３Ｎ４）を用いることができる。
ヒートスプレッダ５としては、アルミニウム、銅、アルミニウム含浸ＳｉＣ、マグネシウム含浸ＳｉＣを用いることができる。また、ヒートスプレッダ５、及びヒートスプレッダ５上の第２接合材２２は省略しても良い。
また、ワイヤ６としては、アルミニウム、アルミニウム合金、銅、パラジウム被覆銅などを用いることができる。 The first bonding material 21 is Sn-Sb solder, Sn-Cu solder, Sn-Ag solder, Sn-Ag-Cu solder, Sn-Ag-In solder, Sn-Zn solder, Sn-Bi. Either a solder based on Sn, Pb based solder, or a combination of these can be used. These solders have the advantage that they can be remelted.
Moreover, the 1st joining material 21 is a solder with the same melting | fusing point as the 2nd joining material 22, or a lower melting | fusing point as an example. As a result, the second bonding material 22 is not remelted during the soldering of the first bonding material 21, so that there is no effect of pattern shorting due to the generation of solder balls or a decrease in the breakdown voltage of the power semiconductor element. .
As the conductive patterns 31a and 31b, copper, aluminum, Ni / Au flash plated copper, Ni plated copper, Ni plated aluminum, or Su plated copper can be used.
As the substrate 3 formed of an insulating material, paper phenol, paper epoxy, glass epoxy, Teflon (registered trademark), polyimide, ceramic (AlN, Al 2 O 3 , Si 3 N 4 ) can be used.
As the heat spreader 5, aluminum, copper, aluminum-impregnated SiC, or magnesium-impregnated SiC can be used. Further, the heat spreader 5 and the second bonding material 22 on the heat spreader 5 may be omitted.
As the wire 6, aluminum, aluminum alloy, copper, palladium-coated copper, or the like can be used.

実施の形態２．
本実施の形態２では、図１Ａに示す電力半導体装置１０１においてケース付け工程まで完了したものに、図２に示すように封止材９を注入した電力半導体装置１０２が示される。電力半導体装置１０２におけるその他の構成は、実施の形態１における電力半導体装置１０１に同じであり、その説明は省略する。 Embodiment 2. FIG.
In the second embodiment, the power semiconductor device 102 in which the sealing material 9 is injected as shown in FIG. 2 is shown in the power semiconductor device 101 shown in FIG. The other configuration of power semiconductor device 102 is the same as that of power semiconductor device 101 in the first embodiment, and a description thereof is omitted.

ここで封止材９として、シリコーン系封止材を用いることで、その誘電率により、封止材９が無い場合よりも絶縁耐電圧が高い電力半導体装置を得ることができるという効果がある。
また、封止材９としてエポキシ系封止材を用いた場合には、第１接合材２１及び第２接合材２２における接合力を封止材９による接着力によって補強することができる。言い換えると、板状電極部材１における接合領域１５の周囲をエポキシ系封止材によって機械的に補強することができ、接合領域１５に発生する応力及び歪みを低減し、はんだの疲労寿命を延ばすことができる。よって、より接続信頼性の高い電力半導体装置１０２を得ることができるという効果がある。 Here, by using a silicone-based sealing material as the sealing material 9, there is an effect that a power semiconductor device having a higher withstand voltage than that without the sealing material 9 can be obtained due to its dielectric constant.
Further, when an epoxy-based sealing material is used as the sealing material 9, the bonding force in the first bonding material 21 and the second bonding material 22 can be reinforced by the adhesive force of the sealing material 9. In other words, the periphery of the joining region 15 in the plate-shaped electrode member 1 can be mechanically reinforced by the epoxy-based sealing material, reducing stress and strain generated in the joining region 15 and extending the fatigue life of the solder. Can do. Therefore, there is an effect that the power semiconductor device 102 with higher connection reliability can be obtained.

また、実施の形態１における電力半導体装置１０１にて説明した効果及び変形例については、当該実施の形態２における電力半導体装置１０２においても同様に得ることができ、また適用可能である。   Further, the effects and modifications described in the power semiconductor device 101 in the first embodiment can be similarly obtained and applied to the power semiconductor device 102 in the second embodiment.

実施の形態３．
本実施の形態３では、実施の形態１の電力半導体装置１０１に対して図３Ａ及び図３Ｂ（総称して、図３と記す場合もある。）に示すように、板状電極部材１の凹部１１と凸部１２とを、板状電極部材１の厚み方向１ｃに貫通する穴１４をさらに設けた電力半導体装置１０３が示される。尚、図３では、板状電極部材１に関する構成部分のみを抜粋して図示している。また、電力半導体装置１０３におけるその他の構成は、実施の形態１における電力半導体装置１０１に同じであり、その説明は省略する。 Embodiment 3 FIG.
In the third embodiment, as shown in FIGS. 3A and 3B (generally referred to as FIG. 3 in general) with respect to the power semiconductor device 101 of the first embodiment, the concave portion of the plate electrode member 1 is used. 11 shows a power semiconductor device 103 further provided with a hole 14 penetrating through the protrusion 11 and the protrusion 12 in the thickness direction 1c of the plate electrode member 1. In FIG. 3, only the components related to the plate electrode member 1 are extracted and shown. Other configurations of power semiconductor device 103 are the same as those of power semiconductor device 101 in the first embodiment, and a description thereof is omitted.

穴１４を設けることで、第１接合材２１内で発生したボイド７を穴１４を通じて、第１接合材２１の外へ排出することが可能になる。したがって、接合部における接合面積は確保され、より接続信頼性の高い電力半導体装置１０３を得ることが可能になるという効果がある。   By providing the hole 14, the void 7 generated in the first bonding material 21 can be discharged out of the first bonding material 21 through the hole 14. Therefore, there is an effect that the junction area at the junction is ensured and the power semiconductor device 103 with higher connection reliability can be obtained.

また、本実施の形態３の電力半導体装置１０３においても、図４に示すように封止材９にて封止した構成を採ることができる。このように封止した場合、実施の形態２で説明した、封止材９の接着による補強効果が得られると共に、本実施の形態３ではさらに、穴１４内にも封止材９が進入することによるアンカー効果により、封止材９の接着寿命を延ばすことができ、より補強効果を増すことができる。したがって、より接続信頼性の高い電力半導体装置１０３を得ることができるという効果がある。   Further, the power semiconductor device 103 according to the third embodiment can also employ a configuration sealed with the sealing material 9 as shown in FIG. When the sealing is performed in this manner, the reinforcing effect by the adhesion of the sealing material 9 described in the second embodiment is obtained, and in the third embodiment, the sealing material 9 further enters the hole 14. Due to the anchor effect, the adhesion life of the sealing material 9 can be extended, and the reinforcing effect can be further increased. Therefore, there is an effect that the power semiconductor device 103 with higher connection reliability can be obtained.

穴１４は、凹部１１及び凸部１２を板状電極部材１から抜き加工を行う際に、凹部１１及び凸部１２と一体的に成型することができるため、追加の工数を必要とせずに成型可能である。また穴１４の形状は、一例として円形状であるが、成型の制約上、角柱形状など他の形状としてもかまわない。また、円形状の穴１４の場合、穴１４の直径の最小値は、一例として板状電極部材１の板厚程度である。また、穴１４の位置は、一例として、凹部１１及び凸部１２の重心を通る位置であるが、これに限定するものではない。   The hole 14 can be molded integrally with the concave portion 11 and the convex portion 12 when the concave portion 11 and the convex portion 12 are punched from the plate-like electrode member 1, so that it does not require additional man-hours. Is possible. The shape of the hole 14 is circular as an example, but other shapes such as a prismatic shape may be used due to molding restrictions. In the case of the circular hole 14, the minimum value of the diameter of the hole 14 is about the plate thickness of the plate electrode member 1 as an example. Moreover, although the position of the hole 14 is a position which passes the gravity center of the recessed part 11 and the convex part 12 as an example, it is not limited to this.

また、穴１４を設けることで、余剰な第１接合材２１を穴１４内へ吸収することができる。また、第１接合材２１に、はんだを用いた場合、穴１４内に形成されたフィレット形状を穴１４の上から見ることができ、板状電極部材１と、はんだとの濡れ状態を目視で検査することが可能となる。よって外観検査を利用して、接合状態に不具合がある製品を排除することができるという効果もある。   Further, by providing the hole 14, it is possible to absorb the excessive first bonding material 21 into the hole 14. When solder is used for the first bonding material 21, the fillet shape formed in the hole 14 can be seen from above the hole 14, and the wet state between the plate electrode member 1 and the solder can be visually observed. It becomes possible to inspect. Therefore, there is an effect that products having defects in the joining state can be eliminated by using the appearance inspection.

さらに、穴１４内に形成されるフィレットによって接合部に作用する応力が分散され、はんだ接合部の応力及び歪みを低減することができる。この点からも、より接続信頼性の高い電力半導体装置１０３を得ることができるという効果が得られる。   Further, the stress acting on the joint is dispersed by the fillet formed in the hole 14, and the stress and distortion of the solder joint can be reduced. Also from this point, the effect that the power semiconductor device 103 with higher connection reliability can be obtained is obtained.

また穴１４を設けることで、導体パターン３１ｂと封止材９とを直接接着することができ、はんだ接合部を補強すると共に、その周辺部へ応力を分散することも可能になる。よって、はんだ接合部の応力及び歪みを低減することができる。さらにこの点からも、より接続信頼性の高い電力半導体装置１０３を得ることができるという効果が得られる。   Also, by providing the holes 14, the conductor pattern 31b and the sealing material 9 can be directly bonded, and the solder joint can be reinforced and the stress can be dispersed to the periphery thereof. Therefore, the stress and distortion of the solder joint can be reduced. Furthermore, also from this point, there is an effect that the power semiconductor device 103 with higher connection reliability can be obtained.

また、実施の形態１における電力半導体装置１０１にて説明した効果及び変形例について、当該実施の形態３における電力半導体装置１０３においても同様に得ることができ、また適用可能である。   Further, the effects and modifications described in the power semiconductor device 101 in the first embodiment can be similarly obtained and applied to the power semiconductor device 103 in the third embodiment.

実施の形態４．
本実施の形態４では、板状電極部材１における凹部１１及び凸部１２の変形例を有する電力半導体装置が示されている。
本実施の形態４では、図５Ａ及び図５Ｂ（総称して図５と記す場合もある。）に示す電力半導体装置１０４において、板状電極部材１は、舌片４１を接合領域１５に有する。詳しく説明すると、板状電極部材１の端部から板状電極部材１の延在方向に沿って２本の切り込みを入れ、切り込み間の切欠き片を導体パターン３１ｂの方へ折り曲げることで、舌片４１を形成する。この舌片４１を導体パターン３１ｂに接触させた状態で板状電極部材１と導体パターン３１ｂとの接合を行う。よって、舌片４１が上述の凸部１２に相当し、舌片４１に成った切欠き部分が上述の穴１４に相当する。
尚、電力半導体装置１０４におけるその他の構成は、実施の形態１における電力半導体装置１０１に同じであり、その説明は省略する。 Embodiment 4 FIG.
In the fourth embodiment, a power semiconductor device having a modification of the concave portion 11 and the convex portion 12 in the plate electrode member 1 is shown.
In the fourth embodiment, in the power semiconductor device 104 shown in FIG. 5A and FIG. 5B (may be collectively referred to as FIG. 5), the plate-like electrode member 1 has the tongue piece 41 in the bonding region 15. More specifically, by making two cuts along the extending direction of the plate electrode member 1 from the end of the plate electrode member 1, and bending the cut piece between the cuts toward the conductor pattern 31b, A piece 41 is formed. The plate-like electrode member 1 and the conductor pattern 31b are joined in a state where the tongue piece 41 is in contact with the conductor pattern 31b. Therefore, the tongue piece 41 corresponds to the convex portion 12 described above, and the notched portion formed in the tongue piece 41 corresponds to the hole 14 described above.
The rest of the configuration of power semiconductor device 104 is the same as that of power semiconductor device 101 in the first embodiment, and a description thereof is omitted.

本実施の形態４におけるこのような構成によれば、舌片４１の折り曲げにより形成された折り曲げ領域４１ａからボイド７を放出することができ、かつ、舌片４１の折り曲げ量によって第１接合材２１の厚さを制御することができる。よって、第１接合材２１の厚さを一定以上にすることができる。   According to such a configuration in the fourth embodiment, the void 7 can be released from the bent region 41 a formed by bending the tongue piece 41, and the first bonding material 21 depends on the bending amount of the tongue piece 41. The thickness of the can be controlled. Therefore, the thickness of the first bonding material 21 can be set to a certain level or more.

また、折り曲げ領域４１ａは、切欠き部分とみなすことができるので、第１接合材２１として、はんだ等、濡れ性を有する材料を用いた場合、実施の形態３で説明したように、フィレット長を長くすることができる。これにより板状電極部材１と第１接合材２１との間に生じる熱応力を低減し、第１接合材２１の熱疲労寿命を延ばすことができる。したがって、より接続信頼性の高い電力半導体装置１０４を得ることができるという効果がある。   Further, since the bent region 41a can be regarded as a notch portion, when a material having wettability such as solder is used as the first bonding material 21, the fillet length is set as described in the third embodiment. Can be long. Thereby, the thermal stress generated between the plate-like electrode member 1 and the first bonding material 21 can be reduced, and the thermal fatigue life of the first bonding material 21 can be extended. Therefore, there is an effect that the power semiconductor device 104 with higher connection reliability can be obtained.

舌片４１及び折り曲げ領域４１ａの大きさの一例としては、図５に示すように、高さＨ＝０．１ｍｍ、折り曲げ領域４１ａの長さＬ１＝３ｍｍ、舌片４１と導体パターン３１ｂとの部材延在方向１ｄにおける長さＬ２、及び、幅方向１ｅにおける領域４１ａの幅Ｗ１は、共に板状電極部材１の厚さ程度である。しかしながら、これらの各寸法は、上述の寸法に限定するものではない。   As an example of the size of the tongue piece 41 and the bent region 41a, as shown in FIG. 5, the height H = 0.1 mm, the length L1 of the bent region 41a = 3 mm, and the members of the tongue piece 41 and the conductor pattern 31b The length L2 in the extending direction 1d and the width W1 of the region 41a in the width direction 1e are both about the thickness of the plate electrode member 1. However, these dimensions are not limited to the above dimensions.

このように本実施の形態４の電力半導体装置１０４では、板状電極部材１において、はんだ接合部以外の部分の断面積に対して、はんだ接合部内の板状電極部材１の断面積は、同じ、あるいは小さくすることができる。その結果、はんだ接合部における角部の応力及び歪みを低減することができ、より接続信頼性の高い電力半導体装置１０４を得ることができるという効果がある。尚、この効果は、以下に説明する実施の形態５でも得ることができる。   As described above, in the power semiconductor device 104 according to the fourth embodiment, in the plate-like electrode member 1, the cross-sectional area of the plate-like electrode member 1 in the solder joint portion is the same as that of the portion other than the solder joint portion. Or it can be made smaller. As a result, the stress and distortion at the corners in the solder joint can be reduced, and the power semiconductor device 104 with higher connection reliability can be obtained. This effect can also be obtained in the fifth embodiment described below.

また、実施の形態１における電力半導体装置１０１にて説明した効果及び変形例について、当該実施の形態４における電力半導体装置１０４においても同様に得ることができ、また適用可能である。   Further, the effects and modifications described in the power semiconductor device 101 in the first embodiment can be similarly obtained and applied to the power semiconductor device 104 in the fourth embodiment.

実施の形態５．
本実施の形態５の電力半導体装置も、実施の形態４と同様に板状電極部材１における凹部１１及び凸部１２の変形例に関する。図６Ａ及び図６Ｂ（総称して図６と記す場合もある。）に示す本実施の形態５の電力半導体装置１０５では、板状電極部材１は、実施の形態４で説明した舌片４１を有さず、折り曲げ領域４１ａに相当する切欠き部４２のみを有する。尚、電力半導体装置１０５におけるその他の構成は、実施の形態１における電力半導体装置１０１に同じであり、その説明は省略する。 Embodiment 5. FIG.
The power semiconductor device according to the fifth embodiment also relates to a modification of the concave portion 11 and the convex portion 12 in the plate electrode member 1 as in the fourth embodiment. In the power semiconductor device 105 according to the fifth embodiment shown in FIGS. 6A and 6B (may be collectively referred to as FIG. 6), the plate-like electrode member 1 has the tongue piece 41 described in the fourth embodiment. It does not have and has only the notch part 42 corresponded to the bending area | region 41a. The other configuration of power semiconductor device 105 is the same as that of power semiconductor device 101 in the first embodiment, and a description thereof is omitted.

切欠き部４２は、板状電極部材１の端部から板状電極部材１の部材延在方向１ｄに沿って延在する凹部であり、本実施の形態５では、板状電極部材１において一箇所に存在する。その結果、本実施の形態５では、板状電極部材１の端部は二股形状であるが、複数の切欠き部４２を設けて三つ股以上としてもよい。即ち、板状電極部材１と第１接合材２１との接合面積が大きくなるほど、ボイド７が発生し易くなり、さらに各材料の角部の応力及び歪みが大きくなる。よって板状電極部材１と第１接合材２１との接続信頼性が低下してしまう。これを防止するために、板状電極部材１の端部つまり接合部に切欠き部４２を形成し、接合部を複数に分割する。
このように構成することで、接合部の角部の応力及び歪みを低減することができ、より接続信頼性の高い電力半導体装置１０５を得ることができるという効果が得られる。 The notch 42 is a recess extending from the end of the plate electrode member 1 along the member extending direction 1 d of the plate electrode member 1. It exists in the place. As a result, in the fifth embodiment, the end portion of the plate-like electrode member 1 has a bifurcated shape, but a plurality of notches 42 may be provided to form three or more forks. That is, as the bonding area between the plate-like electrode member 1 and the first bonding material 21 increases, the void 7 is more likely to be generated, and the stress and strain at the corners of each material increase. Therefore, the connection reliability between the plate electrode member 1 and the first bonding material 21 is lowered. In order to prevent this, a notch 42 is formed at the end of the plate-like electrode member 1, that is, the joint, and the joint is divided into a plurality of parts.
With this configuration, it is possible to reduce the stress and distortion at the corners of the joint, and the power semiconductor device 105 with higher connection reliability can be obtained.

ここで、部材延在方向１ｄにおける切欠き部４２の長さＬ３について、図６Ｂでは第１接合材２１との接合領域１５を超えて延在する形態を示すが、接合領域１５と同じ、あるいは接合領域１５よりも小さい長さであってもよい。   Here, regarding the length L3 of the notch 42 in the member extending direction 1d, FIG. 6B shows a form extending beyond the joining region 15 with the first joining material 21, but the same as the joining region 15 or The length may be smaller than the joining region 15.

実施の形態４、５では、舌片４１及び折り曲げ領域４１ａ、並びに、切欠き部４２は、部材延在方向１ｄに沿う板状電極部材１の中心線に対して対称になるように形成しているが、非対称になるように形成した場合でも、上述と同様の効果が得られる。   In the fourth and fifth embodiments, the tongue piece 41, the bent region 41a, and the notch 42 are formed so as to be symmetric with respect to the center line of the plate electrode member 1 along the member extending direction 1d. However, even when formed so as to be asymmetrical, the same effect as described above can be obtained.

板状電極部材１に電流を流したときの板状電極部材１の過熱を防止するため、通電に伴う発熱と、大気中及び封止材９への放熱とのバランスを取る必要がある。一般的には、板状電極部材からの発熱量を制御するため、板状電極部材の延在方向において板状電極部材の断面積は、一定に設定している。一方、上述したように実施の形態４、５では、板状電極部材１において、はんだ接合部以外の部分の断面積に対して、はんだ接合部内の板状電極部材１の断面積を同じあるいは小さくしている。
この構成に関して、実施の形態４，５においても、実施の形態１〜３における構成と同様に、板状電極部材１と導体パターン３１ｂとの接合部に対応して、厚み方向１ｃにおいて基板３及びヒートスプレッダ５を配置している。よって、板状電極部材１の接合部近傍では、大気中及び封止材９への放熱量よりも、基板３及びヒートスプレッダ５への放熱量が大きくなる。その結果、実施の形態４，５においても、板状電極部材１が過熱することは無い。 In order to prevent overheating of the plate-like electrode member 1 when a current is passed through the plate-like electrode member 1, it is necessary to balance the heat generated by energization with the heat release to the atmosphere and the sealing material 9. Generally, in order to control the amount of heat generated from the plate electrode member, the cross-sectional area of the plate electrode member is set to be constant in the extending direction of the plate electrode member. On the other hand, as described above, in Embodiments 4 and 5, the plate-like electrode member 1 has the same or smaller cross-sectional area of the plate-like electrode member 1 in the solder joint portion than the cross-sectional area of the portion other than the solder joint portion. doing.
With respect to this configuration, in the fourth and fifth embodiments, similarly to the configurations in the first to third embodiments, the substrate 3 and the substrate 3 in the thickness direction 1c correspond to the joint portion between the plate electrode member 1 and the conductor pattern 31b. A heat spreader 5 is arranged. Therefore, in the vicinity of the joint portion of the plate-like electrode member 1, the heat radiation amount to the substrate 3 and the heat spreader 5 is larger than the heat radiation amount to the atmosphere and the sealing material 9. As a result, in the fourth and fifth embodiments, the plate electrode member 1 is not overheated.

また、実施の形態１における電力半導体装置１０１にて説明した効果及び変形例について、当該実施の形態５における電力半導体装置１０５においても同様に得ることができ、また適用可能である。   Further, the effects and modifications described in the power semiconductor device 101 in the first embodiment can be similarly obtained and applied to the power semiconductor device 105 in the fifth embodiment.

また、上述した各実施の形態を組み合わせた構成を採ることも可能であり、また、異なる実施の形態に示される構成部分同士を組み合わせることも可能である。   Moreover, it is also possible to take the structure which combined each embodiment mentioned above, and it is also possible to combine the component parts shown by different embodiment.

１ 板状電極部材、１ａ 第１面、１ｂ 第２面、３ 基板、
３ａ 第１主面、３ｂ 第２主面、８ 電力半導体素子、９ 封止材、
１１ 凹部、１２ 凸部、１４ 穴、１５ 接合領域、１７ 投影領域、
３１ｂ 導体パターン、４１ 舌片、４２ 切欠き部、
１０１〜１０５ 電力半導体装置。 1 plate electrode member, 1a first surface, 1b second surface, 3 substrate,
3a 1st main surface, 3b 2nd main surface, 8 electric power semiconductor element, 9 sealing material,
11 concave portion, 12 convex portion, 14 holes, 15 joint region, 17 projection region,
31b Conductor pattern, 41 Tongue piece, 42 Notch,
101-105 Power semiconductor device.

Claims (5)

半導体素子実装用の基板であって、対向する第１主面と第２主面とにそれぞれ導体パターンを有する基板と、
対向する第１面及び第２面を有し、上記第１主面における導体パターンに上記第２面を接合した接合領域を有する板状電極部材と、を備え、
上記板状電極部材は、上記第１面に凹部を上記第２面に凸部をそれぞれ有し、この凹部及び凸部は、当該板状電極部材の厚み方向において上記接合領域を上記第１面及び上記第２面に投影した投影領域に位置する、
ことを特徴とする半導体装置。 A substrate for mounting a semiconductor element, the substrate having a conductive pattern on each of the first main surface and the second main surface facing each other;
A plate-like electrode member having a first surface and a second surface facing each other, and having a joining region obtained by joining the second surface to the conductor pattern on the first main surface,
The plate-like electrode member has a concave portion on the first surface and a convex portion on the second surface, and the concave portion and the convex portion serve as the first surface in the thickness direction of the plate-like electrode member. And located in the projection area projected on the second surface,
A semiconductor device. 上記板状電極部材は、当該板状電極部材の厚み方向において上記凹部と上記凸部とを貫通する穴を有する、請求項１に記載の半導体装置。   The semiconductor device according to claim 1, wherein the plate electrode member has a hole penetrating the concave portion and the convex portion in a thickness direction of the plate electrode member. 上記基板の第１主面、上記接合領域、及び上記板状電極部材を封止する封止材をさらに備える、請求項１又は２に記載の半導体装置。   The semiconductor device according to claim 1, further comprising a sealing material that seals the first main surface of the substrate, the bonding region, and the plate-like electrode member. 半導体素子実装用の基板であって、対向する第１主面と第２主面とにそれぞれ導体パターンを有する基板と、
対向する第１面及び第２面を有し、上記第１主面における導体パターンに上記第２面を接合した接合領域を有する板状電極部材と、を備え、
上記板状電極部材は、当該板状電極部材の端部に設けた複数の切り込み間に位置する切欠き片を折り曲げた状態の舌片を上記接合領域に有する、
ことを特徴とする半導体装置。 A substrate for mounting a semiconductor element, the substrate having a conductive pattern on each of the first main surface and the second main surface facing each other;
A plate-like electrode member having a first surface and a second surface facing each other, and having a joining region obtained by joining the second surface to the conductor pattern on the first main surface,
The plate-like electrode member has a tongue piece in a state in which a notch piece located between a plurality of cuts provided at an end of the plate-like electrode member is bent in the joining region.
A semiconductor device. 半導体素子実装用の基板であって、対向する第１主面と第２主面とにそれぞれ導体パターンを有する基板と、
対向する第１面及び第２面を有し、上記第１主面における導体パターンに上記第２面を接合した接合領域を有する板状電極部材と、を備え、
上記板状電極部材は、上記接合領域に切欠き部を有し、かつ、上記接合領域における当該板状電極部材の断面積が接合領域外における当該板状電極部材の断面積に比して同じあるいは小さい、
ことを特徴とする半導体装置。 A substrate for mounting a semiconductor element, the substrate having a conductive pattern on each of the first main surface and the second main surface facing each other;
A plate-like electrode member having a first surface and a second surface facing each other, and having a joining region obtained by joining the second surface to the conductor pattern on the first main surface,
The plate-like electrode member has a notch in the joining region, and the cross-sectional area of the plate-like electrode member in the joining region is the same as the cross-sectional area of the plate-like electrode member outside the joining region Or small,
A semiconductor device.
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JPWO2021100199A1 (en) * 2019-11-22 2021-05-27
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JP7237192B2 (en) 2019-11-22 2023-03-10 三菱電機株式会社 Semiconductor device, manufacturing method thereof, and power conversion device
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