JP2017183700A5 - - Google Patents

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Publication number
JP2017183700A5
JP2017183700A5 JP2016241887A JP2016241887A JP2017183700A5 JP 2017183700 A5 JP2017183700 A5 JP 2017183700A5 JP 2016241887 A JP2016241887 A JP 2016241887A JP 2016241887 A JP2016241887 A JP 2016241887A JP 2017183700 A5 JP2017183700 A5 JP 2017183700A5
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JP
Japan
Prior art keywords
wafer
plasma processing
processing apparatus
dielectric film
plasma
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JP2016241887A
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English (en)
Japanese (ja)
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JP2017183700A (ja
JP6877133B2 (ja
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Priority to KR1020170037372A priority Critical patent/KR101995812B1/ko
Priority to US15/469,684 priority patent/US20170278730A1/en
Priority to TW106110164A priority patent/TWI666679B/zh
Publication of JP2017183700A publication Critical patent/JP2017183700A/ja
Publication of JP2017183700A5 publication Critical patent/JP2017183700A5/ja
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Publication of JP6877133B2 publication Critical patent/JP6877133B2/ja
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JP2016241887A 2016-03-28 2016-12-14 プラズマ処理装置およびプラズマ処理方法 Active JP6877133B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020170037372A KR101995812B1 (ko) 2016-03-28 2017-03-24 플라스마 처리 장치 및 플라스마 처리 방법
US15/469,684 US20170278730A1 (en) 2016-03-28 2017-03-27 Plasma processing apparatus and plasma processing method
TW106110164A TWI666679B (zh) 2016-03-28 2017-03-27 電漿處理裝置及電漿處理方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016062978 2016-03-28
JP2016062978 2016-03-28

Publications (3)

Publication Number Publication Date
JP2017183700A JP2017183700A (ja) 2017-10-05
JP2017183700A5 true JP2017183700A5 (fr) 2020-01-30
JP6877133B2 JP6877133B2 (ja) 2021-05-26

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ID=60006448

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JP2016241887A Active JP6877133B2 (ja) 2016-03-28 2016-12-14 プラズマ処理装置およびプラズマ処理方法

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JP (1) JP6877133B2 (fr)
KR (1) KR101995812B1 (fr)
TW (1) TWI666679B (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7073098B2 (ja) * 2017-12-27 2022-05-23 株式会社日立ハイテク ウエハ処理方法およびウエハ処理装置
JP7083080B2 (ja) * 2018-01-11 2022-06-10 株式会社日立ハイテク プラズマ処理装置
JP7018801B2 (ja) * 2018-03-29 2022-02-14 東京エレクトロン株式会社 プラズマ処理装置、及び被処理体の搬送方法
JP7214021B2 (ja) * 2018-03-29 2023-01-27 東京エレクトロン株式会社 プラズマ処理装置、及び被処理体の搬送方法
JP7170449B2 (ja) * 2018-07-30 2022-11-14 東京エレクトロン株式会社 載置台機構、処理装置及び載置台機構の動作方法
JP7236845B2 (ja) * 2018-11-15 2023-03-10 株式会社Kelk 温調装置
KR102211817B1 (ko) * 2018-12-14 2021-02-05 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN111383885B (zh) * 2018-12-27 2023-03-31 中微半导体设备(上海)股份有限公司 一种能提高控温精度的基片安装台及等离子体处理设备
KR102370471B1 (ko) * 2019-02-08 2022-03-03 주식회사 히타치하이테크 플라스마 처리 장치
TWI701751B (zh) * 2019-03-12 2020-08-11 力晶積成電子製造股份有限公司 晶圓夾盤裝置、晶圓形變量的量測方法及半導體製造方法
CN112951739A (zh) * 2019-12-10 2021-06-11 圆益Ips股份有限公司 基板支撑架及基板处理装置
US20230141653A1 (en) * 2021-06-14 2023-05-11 Lam Research Corporation Frontside and backside pressure monitoring for substrate movement prevention

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264626A (ja) 1994-04-28 1996-10-11 Hitachi Ltd 試料保持方法及び試料表面の流体処理方法並びにそれらの装置
JPH09143674A (ja) * 1995-11-24 1997-06-03 Tokyo Electron Ltd 成膜装置及びその使用方法
GB0108002D0 (en) * 2001-03-30 2001-05-23 Trikon Holdings Ltd A method of etching a substrate
JP4815298B2 (ja) * 2006-07-31 2011-11-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
US8057602B2 (en) * 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
JP4929150B2 (ja) * 2007-12-27 2012-05-09 新光電気工業株式会社 静電チャック及び基板温調固定装置
JP5745812B2 (ja) * 2010-10-27 2015-07-08 東京エレクトロン株式会社 プラズマ処理装置
US8941969B2 (en) * 2012-12-21 2015-01-27 Applied Materials, Inc. Single-body electrostatic chuck
JP6159172B2 (ja) * 2013-06-26 2017-07-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
CN104377155B (zh) * 2013-08-14 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 静电卡盘以及等离子体加工设备
GB201402126D0 (en) * 2014-02-07 2014-03-26 Spts Technologies Ltd Method of processing a substrate
KR20160015510A (ko) * 2014-07-30 2016-02-15 삼성전자주식회사 정전척 어셈블리, 이를 구비하는 반도체 제조장치, 및 이를 이용한 플라즈마 처리방법

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