JP2017162851A - 凹部内の結晶成長方法および処理装置 - Google Patents
凹部内の結晶成長方法および処理装置 Download PDFInfo
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Abstract
Description
最初に、本発明に係る凹部内の結晶成長方法の一実施形態について、図1のフロー図および図2の工程断面図に基づいて説明する。
次に、本発明の凹部内の結晶成長方法の実施に用いることができる処理装置の一例について説明する。図3は、そのような処理装置の一例である成膜装置を示す縦断面図である。
・ウエハ枚数:150枚
・1回目のアモルファスシリコン膜成膜
温度:500℃
圧力:2.0Torr(267Pa)
SiH4ガス流量:1000sccm
・1回目のエッチング
温度:400℃
圧力:0.3Torr(40Pa)
Cl2ガス流量:1000sccm
・1回目のアニール(結晶性シリコン層の形成)
温度:650℃
圧力:8.8×10−3Torr(1.2Pa)
N2ガス流量:1500sccm
・2回目のアモルファスシリコン膜成膜
温度:400℃
圧力:1.0Torr(133Pa)
Si2H6ガス流量:200sccm
・2回目のアニール(SPE工程)
温度:550℃
圧力:8.8×10−3Torr(1.2Pa)
N2ガス流量:1500sccm
・2回目のエッチング
温度:300℃
圧力:0.5Torr(67Pa)
Cl2ガス流量:1000sccm
以上、本発明の実施形態について説明したが、この発明は、上記の実施形態に限定されることはなく、その趣旨を逸脱しない範囲で種々変形可能である。
2;加熱炉
4;ヒータ
10;処理容器
20;ウエハボート
21;Si原料ガス供給機構
22;不純物含有ガス供給機構
23;エッチングガス供給機構
45;排気管
46;真空ポンプ
50;制御部
200;Si基体
201;絶縁膜
202;凹部(トレンチまたはホール)
203,205;アモルファスシリコン膜
204;結晶性シリコン層
206;エピタキシャル結晶層
W;半導体ウエハ(被処理基板)
Claims (13)
- 表面に凹部が形成された絶縁膜を有する被処理基板に対し、前記凹部内に結晶を成長させる、凹部内の結晶成長方法であって、
(a)前記絶縁膜の表面に、前記凹部を完全に埋め込まない程度に第1の膜を成膜する工程と、
(b)次いで、前記第1の膜をエッチングガスによりエッチングして、前記凹部内の底部のみに前記第1の膜を残存させる工程と、
(c)次いで、前記被処理基板をアニールして、前記凹部内の底部に残存する第1の膜を結晶性層とする工程と、
(d)次いで、前記絶縁膜の表面および前記結晶性層の表面に、前記凹部を完全に埋め込まない程度に第2の膜を成膜する工程と、
(e)次いで、前記被処理基板をアニールして、前記第2の膜を前記凹部内の底部から固相エピタキシャル成長により結晶成長させ、エピタキシャル結晶層を形成する工程と、
(f)次いで、残存する前記第2の膜をエッチングガスによりエッチングして除去する工程と
を有することを特徴とする凹部内の結晶成長方法。 - 前記(d)工程、前記(e)工程、および前記(f)工程のシーケンスを複数回繰り返すことを特徴とする請求項1に記載の凹部内の結晶成長方法。
- 前記第1の膜は、シリコン膜であり、前記第2の膜は、シリコン膜、ゲルマニウム膜、シリコンゲルマニウム膜のいずれかであることを特徴とする請求項1または請求項2に記載の凹部内の結晶成長方法。
- 前記シリコン膜は、シリコン原料ガスを用いたCVD法により形成され、前記ゲルマニウム膜は、ゲルマニウム原料ガスを用いたCVD法により形成され、前記シリコンゲルマニウム膜は、シリコン原料ガスおよびゲルマニウム原料ガスを用いたCVD法により形成されることを特徴とする請求項3に記載の凹部内の結晶成長方法。
- 前記シリコン原料ガスは、シラン系ガスまたはアミノシラン系ガスであり、前記ゲルマニウム原料ガスは、ゲルマン系ガスまたはアミノゲルマン系ガスであることを特徴とする請求項4に記載の凹部内の結晶成長方法。
- 前記(b)工程および前記(f)工程は、前記第1の膜および前記第2の膜がシリコン膜である場合に、前記エッチングガスは、Cl2、HCl、F2、Br2、HBrから選択されたものであることを特徴とする請求項3から請求項5のいずれか1項に記載の凹部内の結晶成長方法。
- 前記(b)工程は、前記被処理基板の温度を200〜500℃にして行われることを特徴とする請求項6に記載の凹部内の結晶成長方法。
- 前記(a)工程および前記(d)工程は、前記第1の膜および前記第2の膜がシリコン膜である場合に、前記被処理基板の温度を300〜700℃の範囲内にして行われることを特徴とする請求項3から請求項7のいずれか1項に記載の凹部内の結晶成長方法。
- 前記(c)工程は、前記第1の膜がシリコン膜である場合に、前記被処理基板の温度を500℃以上にして行われることを特徴とする請求項3から請求項8のいずれか1項に記載の凹部内の結晶成長方法。
- 前記(e)工程は、前記第2の膜がシリコン膜である場合に、前記被処理基板の温度を300〜600℃の範囲で行われることを特徴とする請求項3から請求項9のいずれか1項に記載の凹部内の結晶成長方法。
- 表面に凹部が形成された絶縁膜を有する被処理基板に対し、前記凹部内に結晶を成長させる処理装置であって、
前記被処理基板を収容する処理容器と、
前記処理容器内にガスを供給するガス供給部と、
前記処理容器内を加熱する加熱機構と、
前記処理容器内を排気して減圧状態とする排気機構と、
前記ガス供給部、前記加熱機構、および前記排気機構を制御する制御部と
を具備し、
前記制御部は、
前記排気機構により前記処理容器内を所定の減圧状態に制御し、前記加熱機構により前記処理容器内を所定温度に制御し、
前記ガス供給部から前記処理容器内に第1のガスを供給させて、前記絶縁膜の表面に、前記凹部を完全に埋め込まない程度に第1の膜を成膜させ、
次いで、前記ガス供給部から前記処理容器内にエッチングガスを供給させ、前記第1の膜をエッチングさせて、前記凹部内の底部のみに前記第1の膜を残存させ、
次いで、前記ガス供給部から前記処理容器内にアニールガスを供給させて、前記被処理基板をアニールさせ、前記凹部内の底部に残存する第1の膜を結晶性層とさせ、
次いで、前記ガス供給部から前記処理容器内に第2のガスを供給させて、前記絶縁膜の表面および前記結晶性層の表面に、前記凹部を完全に埋め込まない程度に第2の膜を成膜させ、
次いで、前記ガス供給部から前記処理容器内にアニールガスを供給させて、前記被処理基板をアニールさせ、前記第2の膜を前記凹部内の底部から固相エピタキシャル成長により結晶成長させ、
次いで、前記ガス供給部から前記処理容器内にエッチングガスを供給させて、前記第2の膜をエッチングにより除去させることを特徴とする処理装置。 - 前記処理容器は、前記被処理基板が複数保持された基板保持具が収容され、複数の基板に対して処理が行われることを特徴とする請求項11に記載の処理装置。
- コンピュータ上で動作し、処理装置を制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項1から請求項10のいずれかの凹部内の結晶成長方法が行われるように、コンピュータに前記処理装置を制御させることを特徴とする記憶媒体。
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