JP6584348B2 - 凹部の埋め込み方法および処理装置 - Google Patents
凹部の埋め込み方法および処理装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 40
- 229910052732 germanium Inorganic materials 0.000 claims description 61
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 58
- 238000005530 etching Methods 0.000 claims description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 44
- 229910052710 silicon Inorganic materials 0.000 claims description 44
- 239000010703 silicon Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 29
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 26
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000003860 storage Methods 0.000 claims description 9
- 229910000078 germane Inorganic materials 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 4
- GMEFXBFKMIZRMO-UHFFFAOYSA-N aminogermanium Chemical compound [Ge]N GMEFXBFKMIZRMO-UHFFFAOYSA-N 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 126
- 235000012431 wafers Nutrition 0.000 description 33
- 229910021417 amorphous silicon Inorganic materials 0.000 description 25
- 239000011261 inert gas Substances 0.000 description 16
- 150000001875 compounds Chemical class 0.000 description 10
- -1 silane compound Chemical class 0.000 description 10
- 239000002994 raw material Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 2
- AWFPGKLDLMAPMK-UHFFFAOYSA-N dimethylaminosilicon Chemical compound CN(C)[Si] AWFPGKLDLMAPMK-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- GWFYHOXZOBEFTG-UHFFFAOYSA-N [GeH3]N Chemical compound [GeH3]N GWFYHOXZOBEFTG-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/24—Deposition of silicon only
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Description
最初に、本発明に係る凹部の埋め込み方法の一実施形態について、図1のフロー図および図2の工程断面図に基づいて説明する。
次に、本発明の凹部の埋め込み方法の実施に用いることができる処理装置の一例について説明する。図3は、そのような処理装置の一例である成膜装置を示す縦断面図である。
・ウエハ枚数:150枚
・アモルファスシリコン膜成膜
温度:500℃
圧力:2.0Torr(267Pa)
SiH4ガス流量:1000sccm
・エッチング
温度:400℃
圧力:0.3Torr(40Pa)
Cl2ガス流量:1000sccm
・Ge膜埋め込み
温度:300℃
圧力:1.5Torr(200Pa)
GeH4ガス流量:700sccm
・SiGe膜埋め込み
温度:350℃
圧力:1.5Torr(200Pa)
GeH4ガス流量:900sccm
SiH4ガス流量:225sccm
次に実験例について説明する。
図4は実験例におけるサンプルウエハの各工程の断面を示すSEM写真である。
図4(a)に示すような、Si基体上に形成されたSiO2膜に間口の幅が40nm、深さが300nmのトレンチが所定パターンで形成されたサンプルウエハを準備し、このサンプルウエハに対し図3の成膜装置を用いて埋め込み処理を行った。
以上、本発明の実施形態について説明したが、この発明は、上記の実施形態に限定されることはなく、その趣旨を逸脱しない範囲で種々変形可能である。
2;加熱炉
4;ヒータ
10;処理容器
20;ウエハボート
21;Si原料ガス供給機構
22;Ge原料ガス供給機構
23;エッチングガス供給機構
41;排気管
42;真空ポンプ
50;制御部
200;Si基体
201;絶縁膜
202;凹部(トレンチまたはホール)
203;アモルファスシリコン膜
204;ゲルマニウム系膜
W;半導体ウエハ(被処理基板)
Claims (12)
- 凹部が形成された絶縁膜を表面に有する被処理基板に対し、前記凹部にゲルマニウムまたはシリコンゲルマニウムからなるゲルマニウム系膜を埋め込む凹部の埋め込み方法であって、
前記絶縁膜の表面に、前記凹部を完全に埋め込まない程度にシリコン膜を成膜する工程と、
次いで、前記シリコン膜をエッチングして、前記凹部内の底部のみに前記シリコン膜を残存させる工程と、
次いで、前記凹部内の底部に残存する前記シリコン膜上に選択的にゲルマニウムまたはシリコンゲルマニウムからなるゲルマニウム系膜を成長させ、前記凹部に選択的に前記ゲルマニウム系膜を埋め込む工程と
を有することを特徴とする凹部の埋め込み方法。 - 前記シリコン膜は、シリコン原料ガスを用いたCVD法により形成され、前記ゲルマニウム系膜は、ゲルマニウム原料ガス、またはゲルマニウム原料ガスおよびシリコン原料ガスを用いたCVD法により形成されることを特徴とする請求項1に記載の凹部の埋め込み方法。
- 前記シリコン原料ガスは、シラン系ガスまたはアミノシラン系ガスであることを特徴とする請求項2に記載の凹部の埋め込み方法。
- 前記ゲルマニウム原料ガスは、ゲルマン系ガスまたはアミノゲルマン系ガスであることを特徴とする請求項2または請求項3に記載の凹部の埋め込み方法。
- 前記シリコン膜をエッチングする工程は、被処理基板に前記シリコン膜をエッチング可能なエッチングガスを供給することによりなされることを特徴とする請求項1から請求項4のいずれか1項に記載の凹部の埋め込み方法。
- 前記エッチングガスは、Cl2、HCl、F2、Br2、HBrから選択されたものであることを特徴とする請求項5に記載の凹部の埋め込み方法。
- 前記シリコン膜を成膜する工程は、前記被処理基板の温度を300〜700℃の範囲内にして行われることを特徴とする請求項1から請求項6のいずれか1項に記載の凹部の埋め込み方法。
- 前記シリコン膜をエッチングする工程は、前記被処理基板の温度を200〜500℃にして行われることを特徴とする請求項1から請求項7のいずれか1項に記載の凹部の埋め込み方法。
- 前記凹部に選択的に前記ゲルマニウム系膜を埋め込む工程は、前記被処理基板の温度を200〜500℃にして行われることを特徴とする請求項1から請求項8のいずれか1項に記載の凹部の埋め込み方法。
- 凹部が形成された絶縁膜を表面に有する被処理基板に対し、前記凹部にゲルマニウムまたはシリコンゲルマニウムからなるゲルマニウム系膜を埋め込む処理装置であって、
前記被処理基板を収容する処理容器と、
前記処理容器内に所定のガスを供給するガス供給部と、
前記処理容器内を加熱する加熱機構と、
前記処理容器内を排気して減圧状態とする排気機構と、
前記ガス供給部、前記加熱機構、および前記排気機構を制御する制御部と
を具備し、
前記制御部は、
前記排気機構により前記処理容器内を所定の減圧状態に制御し、前記加熱機構により前記処理容器内を所定温度に制御し、
前記ガス供給部から前記処理容器内にシリコン原料ガスを供給させて、前記絶縁膜の表面に、前記凹部を完全に埋め込まない程度にシリコン膜を成膜させ、
次いで、前記ガス供給部から前記処理容器内にエッチングガスを供給させ、前記シリコン膜をエッチングして、前記凹部内の底部のみに前記シリコン膜を残存させ、
次いで、前記ガス供給部から前記処理容器内にゲルマニウム原料ガス、またはゲルマニウム原料ガスおよび前記シリコン原料ガスを供給させて、前記凹部内の底部に残存する前記シリコン膜上に選択的にゲルマニウムまたはシリコンゲルマニウムからなるゲルマニウム系膜を成長させることを特徴とする処理装置。 - 前記処理容器は、前記被処理基板が複数保持された基板保持具が収容され、複数の基板に対して処理が行われることを特徴とする請求項10に記載の処理装置。
- コンピュータ上で動作し、処理装置を制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項1から請求項9のいずれかの凹部の埋め込み方法が行われるように、コンピュータに前記処理装置を制御させることを特徴とする記憶媒体。
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