JP2017152541A5 - - Google Patents
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- JP2017152541A5 JP2017152541A5 JP2016033597A JP2016033597A JP2017152541A5 JP 2017152541 A5 JP2017152541 A5 JP 2017152541A5 JP 2016033597 A JP2016033597 A JP 2016033597A JP 2016033597 A JP2016033597 A JP 2016033597A JP 2017152541 A5 JP2017152541 A5 JP 2017152541A5
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- 238000005530 etching Methods 0.000 description 1
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Description
また、特開２０１３−９８１９２号公報（特許文献２）の［０１２８］段落〜［０１３５］段落および図３９〜図４１には、等方性のエッチングを用いて、サイドウォール長を短くする技術が開示されている。
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016033597A JP6620034B2 (ja) | 2016-02-24 | 2016-02-24 | 半導体装置の製造方法 |
| TW106101084A TW201810533A (zh) | 2016-02-24 | 2017-01-13 | 半導體裝置之製造方法 |
| US15/409,947 US10546946B2 (en) | 2016-02-24 | 2017-01-19 | Method for manufacturing semiconductor device having thinned fins |
| CN201710086452.XA CN107123649B (zh) | 2016-02-24 | 2017-02-17 | 用于制造半导体器件的方法 |
| KR1020170022867A KR20170099769A (ko) | 2016-02-24 | 2017-02-21 | 반도체 장치의 제조 방법 |
| US16/707,985 US11217682B2 (en) | 2016-02-24 | 2019-12-09 | Method for manufacturing semiconductor device having thinned fins |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016033597A JP6620034B2 (ja) | 2016-02-24 | 2016-02-24 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017152541A JP2017152541A (ja) | 2017-08-31 |
| JP2017152541A5 true JP2017152541A5 (ja) | 2018-11-01 |
| JP6620034B2 JP6620034B2 (ja) | 2019-12-11 |
Family
ID=59631201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016033597A Active JP6620034B2 (ja) | 2016-02-24 | 2016-02-24 | 半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10546946B2 (ja) |
| JP (1) | JP6620034B2 (ja) |
| KR (1) | KR20170099769A (ja) |
| CN (1) | CN107123649B (ja) |
| TW (1) | TW201810533A (ja) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180151716A1 (en) | 2016-11-28 | 2018-05-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and forming method thereof |
| US10727343B2 (en) * | 2017-09-28 | 2020-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having fin structures |
| US10170577B1 (en) | 2017-12-04 | 2019-01-01 | International Business Machines Corporation | Vertical transport FETs having a gradient threshold voltage |
| CN109979943B (zh) * | 2017-12-28 | 2022-06-21 | 联华电子股份有限公司 | 半导体元件及其制造方法 |
| US10468428B1 (en) * | 2018-04-19 | 2019-11-05 | Silicon Storage Technology, Inc. | Split gate non-volatile memory cells and logic devices with FinFET structure, and method of making same |
| US10535529B2 (en) | 2018-06-05 | 2020-01-14 | International Business Machines Corporation | Semiconductor fin length variability control |
| US10727240B2 (en) | 2018-07-05 | 2020-07-28 | Silicon Store Technology, Inc. | Split gate non-volatile memory cells with three-dimensional FinFET structure |
| KR102472571B1 (ko) * | 2018-07-20 | 2022-12-01 | 삼성전자주식회사 | 반도체 소자 |
| CN110858565B (zh) * | 2018-08-24 | 2022-06-28 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
| JP2020043103A (ja) * | 2018-09-06 | 2020-03-19 | キオクシア株式会社 | 半導体記憶装置およびその製造方法 |
| US10797142B2 (en) | 2018-12-03 | 2020-10-06 | Silicon Storage Technology, Inc. | FinFET-based split gate non-volatile flash memory with extended source line FinFET, and method of fabrication |
| US10937794B2 (en) * | 2018-12-03 | 2021-03-02 | Silicon Storage Technology, Inc. | Split gate non-volatile memory cells with FinFET structure and HKMG memory and logic gates, and method of making same |
| JP7232081B2 (ja) * | 2019-03-01 | 2023-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| EP3840036A1 (en) | 2019-12-19 | 2021-06-23 | Imec VZW | Cointegration method for forming a semiconductor device |
| US11114451B1 (en) * | 2020-02-27 | 2021-09-07 | Silicon Storage Technology, Inc. | Method of forming a device with FinFET split gate non-volatile memory cells and FinFET logic devices |
| US11362100B2 (en) | 2020-03-24 | 2022-06-14 | Silicon Storage Technology, Inc. | FinFET split gate non-volatile memory cells with enhanced floating gate to floating gate capacitive coupling |
| US11552085B2 (en) * | 2020-09-28 | 2023-01-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including memory cell and fin arrangements |
| US11776816B2 (en) * | 2020-12-02 | 2023-10-03 | Synopsys, Inc. | Fin patterning to reduce fin collapse and transistor leakage |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6885055B2 (en) * | 2003-02-04 | 2005-04-26 | Lee Jong-Ho | Double-gate FinFET device and fabricating method thereof |
| US7115974B2 (en) * | 2004-04-27 | 2006-10-03 | Taiwan Semiconductor Manfacturing Company, Ltd. | Silicon oxycarbide and silicon carbonitride based materials for MOS devices |
| JP2006041354A (ja) | 2004-07-29 | 2006-02-09 | Renesas Technology Corp | 半導体装置及びその製造方法 |
| KR100598109B1 (ko) * | 2004-10-08 | 2006-07-07 | 삼성전자주식회사 | 비휘발성 기억 소자 및 그 형성 방법 |
| US7494858B2 (en) * | 2005-06-30 | 2009-02-24 | Intel Corporation | Transistor with improved tip profile and method of manufacture thereof |
| US7396711B2 (en) * | 2005-12-27 | 2008-07-08 | Intel Corporation | Method of fabricating a multi-cornered film |
| US7781306B2 (en) * | 2007-06-20 | 2010-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor substrate and method for manufacturing the same |
| JP5847537B2 (ja) | 2011-10-28 | 2016-01-27 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| KR101964262B1 (ko) | 2011-11-25 | 2019-04-02 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
| KR101823105B1 (ko) * | 2012-03-19 | 2018-01-30 | 삼성전자주식회사 | 전계 효과 트랜지스터의 형성 방법 |
| US9368388B2 (en) | 2012-04-13 | 2016-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for FinFETs |
| KR101912582B1 (ko) | 2012-04-25 | 2018-12-28 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
| US8697515B2 (en) | 2012-06-06 | 2014-04-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making a FinFET device |
| TWI540650B (zh) * | 2014-08-06 | 2016-07-01 | 聯華電子股份有限公司 | 鰭狀場效電晶體元件製造方法 |
| US9437445B1 (en) * | 2015-02-24 | 2016-09-06 | International Business Machines Corporation | Dual fin integration for electron and hole mobility enhancement |
| US20170140992A1 (en) * | 2015-11-16 | 2017-05-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field effect transistor and method for fabricating the same |
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2016
- 2016-02-24 JP JP2016033597A patent/JP6620034B2/ja active Active
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2017
- 2017-01-13 TW TW106101084A patent/TW201810533A/zh unknown
- 2017-01-19 US US15/409,947 patent/US10546946B2/en active Active
- 2017-02-17 CN CN201710086452.XA patent/CN107123649B/zh active Active
- 2017-02-21 KR KR1020170022867A patent/KR20170099769A/ko unknown
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2019
- 2019-12-09 US US16/707,985 patent/US11217682B2/en active Active