JP2018190803A5 - - Google Patents

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JP2018190803A5
JP2018190803A5 JP2017090592A JP2017090592A JP2018190803A5 JP 2018190803 A5 JP2018190803 A5 JP 2018190803A5 JP 2017090592 A JP2017090592 A JP 2017090592A JP 2017090592 A JP2017090592 A JP 2017090592A JP 2018190803 A5 JP2018190803 A5 JP 2018190803A5
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japanese patent
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japanese
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JP2017090592A
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JP2018190803A (ja
JP6892577B2 (ja
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Priority claimed from JP2017090592A external-priority patent/JP6892577B2/ja
Priority to CN201810180180.4A priority patent/CN108807433B/zh
Priority to US15/938,008 priority patent/US10741606B2/en
Publication of JP2018190803A publication Critical patent/JP2018190803A/ja
Publication of JP2018190803A5 publication Critical patent/JP2018190803A5/ja
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特開2015−90957号公報 特開2011−211171号公報 特開平2−180071号公報 特開2009−147056号公報
JP2017090592A 2017-04-28 2017-04-28 イメージセンサ及びセンサ装置 Active JP6892577B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017090592A JP6892577B2 (ja) 2017-04-28 2017-04-28 イメージセンサ及びセンサ装置
CN201810180180.4A CN108807433B (zh) 2017-04-28 2018-03-05 图像传感器及传感器装置
US15/938,008 US10741606B2 (en) 2017-04-28 2018-03-28 Image sensor and sensor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017090592A JP6892577B2 (ja) 2017-04-28 2017-04-28 イメージセンサ及びセンサ装置

Publications (3)

Publication Number Publication Date
JP2018190803A JP2018190803A (ja) 2018-11-29
JP2018190803A5 true JP2018190803A5 (ja) 2020-04-16
JP6892577B2 JP6892577B2 (ja) 2021-06-23

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JP2017090592A Active JP6892577B2 (ja) 2017-04-28 2017-04-28 イメージセンサ及びセンサ装置

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US (1) US10741606B2 (ja)
JP (1) JP6892577B2 (ja)
CN (1) CN108807433B (ja)

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* Cited by examiner, † Cited by third party
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CN108305874B (zh) * 2017-01-12 2022-03-08 株式会社日本有机雷特显示器 半导体装置
CN109276268A (zh) * 2018-11-21 2019-01-29 京东方科技集团股份有限公司 X射线探测装置及其制造方法
WO2020129712A1 (ja) * 2018-12-20 2020-06-25 ソニーセミコンダクタソリューションズ株式会社 撮像装置
CN110047859A (zh) * 2019-04-24 2019-07-23 北京京东方传感技术有限公司 传感器及其制备方法
CN110391308B (zh) * 2019-09-19 2019-12-27 南京迪钛飞光电科技有限公司 一种平板探测器及其制造方法
CN111430386B (zh) * 2020-04-01 2023-11-10 京东方科技集团股份有限公司 光电探测器、显示基板及光电探测器的制作方法
JP7464447B2 (ja) * 2020-06-05 2024-04-09 Tianma Japan株式会社 イメージセンサ
CN116547817A (zh) * 2021-12-02 2023-08-04 京东方科技集团股份有限公司 光电传感器和基板

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JP2692218B2 (ja) 1988-12-29 1997-12-17 ソニー株式会社 固体撮像素子
US5408113A (en) 1992-06-30 1995-04-18 Ricoh Company, Ltd. High sensitivity improved photoelectric imaging device with a high signal to noise ratio
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JP4323827B2 (ja) * 2003-02-14 2009-09-02 キヤノン株式会社 固体撮像装置及び放射線撮像装置
US20070161165A1 (en) * 2006-01-12 2007-07-12 Toppoly Optoelectronics Corp. Systems and methods involving thin film transistors
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JP2009147056A (ja) 2007-12-13 2009-07-02 Seiko Epson Corp 半導体装置及びその製造方法
TWI529942B (zh) * 2009-03-27 2016-04-11 半導體能源研究所股份有限公司 半導體裝置
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