JP2017139411A - 半導体装置の製造装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 142
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 230000003287 optical effect Effects 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000010438 heat treatment Methods 0.000 claims description 9
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000012815 thermoplastic material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000004886 head movement Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000011410 subtraction method Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
Description
前記認識マークが形成された面に接触して前記被実装部材を吸着保持する吸着保持部材と、
前記吸着保持部材で吸着保持した前記被実装部材を加熱する第1加熱装置と、
前記実装ヘッドの外側に、前記被実装部材の前記認識マークを同時に認識して画像認識の情報を取得する画像認識装置と、
前記実装ヘッドの内側に、吸着保持した前記被実装部材の前記複数の認識マークの画像情報を前記画像認識装置に同時に導く複数の光学部品と、
前記画像認識装置で取得した前記画像認識の情報に基づき前記被実装部材の位置を算出する位置算出部とを備え、
前記複数の光学部品が、全て、1つのベース上の同一平面に固定されている。
図1は、本発明の第1実施の形態における半導体装置の製造装置の構成を示す概略断面図である。図1に示す本発明の第1実施の形態における半導体装置の製造装置は、半導体素子2を吸着可能な吸着孔5aを有する透明な吸着ノズル5を備えた実装ヘッド1と、実装ヘッド1に対向するように設けられた基板13を固定するステージ12と、ステージ12の平面に対し垂直方向に実装ヘッド1を駆動するヘッド昇降駆動機構40とを備えている。半導体素子2は被実装部材の一例として機能する。吸着ノズル5は吸着保持部材の一例として機能する。制御装置51は、ヘッド昇降駆動機構40と、後述するヒーター6と真空ポンプ41とヘッド移動機構52と画像処理装置42と位置算出部50とをそれぞれ駆動制御する。
0.5 ≦ α2×(T2−RT)/{α1×(T1−RT)} ≦ 2.0
・・・・・・式(1)
となるように、半導体素子2とベース9との線膨張係数を設定するとよい。α2×(T2−RT)/{α1×(T1−RT)}が0.5未満になると、半導体素子2の熱膨張量がベース9の熱膨張量を大きく上回るため、視野から外れる。また、α2×(T2−RT)/{α1×(T1−RT)}>2.0の場合、ベース9の熱膨張量が半導体素子2の熱膨張量を大きく上回るため、視野から外れる。
第1実施の形態において、実装ヘッド1には光透過性に優れた膜が形成されたヒーター6を有することについて述べたが、これに限られるものではない。より高温に加熱できるように光透過膜よりも熱容量を大きくするために、ヒーター6は、局所的に光透過部が設けられたヒーターであってもよい。
また、熱膨張量をより精緻に制御できるように、ベース9に接するように第2のヒーター32をベース9の上面に設けても構わない。第2のヒーター32は第2加熱装置の一例として機能する。図8は、本発明の第3実施の形態における半導体装置の製造装置を示す概略断面図である。ベース9に接するように、温度制御機能が付いた第2のヒーター32が設けられている。制御装置51で制御することにより、第2のヒーター32によりベース9の温度を所定の温度に設定できるため、ベース9の熱膨張量を制御することができるようになり、例えば10mm×10mmのように外形の大きな半導体素子であっても、視野から外れることなく認識カメラ11で認識でき、高精度で実装できるようになる。
2 半導体素子
3、3a、3b 認識マーク
4 接着層
5 吸着ノズル
5a 吸着孔
6、31、32 ヒーター
7 真空室
8 透明板
9 ベース
10、10a、10b、10c、10d、10e、10f 光学部品
11 認識カメラ
12 ステージ
13 基板
14 窓部
15 移載ステージ
31a 光透過部
31b 光透過材
40 ヘッド昇降駆動機構
41 真空ポンプ
42 画像処理装置
50 位置算出部
51 制御装置
52 ヘッド移動機構
53 吸着用認識カメラ
54 支柱
Claims (3)
- 複数の位置合わせ用の認識マークが形成された被実装部材を、実装ヘッドを用いて、接合層を介して基板に実装する半導体装置の製造装置において、
前記認識マークが形成された面に接触して前記被実装部材を吸着保持する吸着保持部材と、
前記吸着保持部材で吸着保持した前記被実装部材を加熱する第1加熱装置と、
前記実装ヘッドの外側に、前記被実装部材の前記認識マークを同時に認識して画像認識の情報を取得する画像認識装置と、
前記実装ヘッドの内側に、吸着保持した前記被実装部材の前記複数の認識マークの画像情報を前記画像認識装置に同時に導く複数の光学部品と、
前記画像認識装置で取得した前記画像認識の情報に基づき前記被実装部材の位置を算出する位置算出部とを備え、
前記複数の光学部品が、全て、1つのベース上の同一平面に固定されている半導体装置の製造装置。 - 前記被実装部材の線膨張係数をα1とし、前記ベースの線膨張係数をα2とし、前記被実装部材の温度をT1とし、前記ベースの温度をT2とし、室温をRTとすると、
0.5 ≦ α2×(T2−RT)/{α1×(T1−RT)} ≦ 2.0
である請求項1に記載の半導体装置の製造装置。 - 前記ベースを加熱する第2加熱装置をさらに備える請求項1又は2に記載の半導体装置の製造装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016020883A JP6390978B2 (ja) | 2016-02-05 | 2016-02-05 | 半導体装置の製造装置 |
TW105133408A TWI627683B (zh) | 2016-02-05 | 2016-10-17 | 半導體裝置的製造裝置 |
CN201611069217.3A CN107045988B (zh) | 2016-02-05 | 2016-11-28 | 半导体装置的制造装置 |
KR1020160173409A KR101858368B1 (ko) | 2016-02-05 | 2016-12-19 | 반도체 장치의 제조 장치 |
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JP2016020883A JP6390978B2 (ja) | 2016-02-05 | 2016-02-05 | 半導体装置の製造装置 |
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JP2017139411A true JP2017139411A (ja) | 2017-08-10 |
JP6390978B2 JP6390978B2 (ja) | 2018-09-19 |
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JP (1) | JP6390978B2 (ja) |
KR (1) | KR101858368B1 (ja) |
CN (1) | CN107045988B (ja) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2020034362A (ja) * | 2018-08-29 | 2020-03-05 | ヤマハ発動機株式会社 | 認識装置、表面実装機および認識対象の位置認識方法 |
WO2020090957A1 (ja) * | 2018-11-01 | 2020-05-07 | ヤマハモーターロボティクスホールディングス株式会社 | 電子部品実装装置 |
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CN107734958A (zh) * | 2017-10-11 | 2018-02-23 | 广州煌牌自动设备有限公司 | 一种全透明的贴片机吸嘴 |
CN107734957A (zh) * | 2017-10-11 | 2018-02-23 | 广州煌牌自动设备有限公司 | 一种集成定位识别相机的贴片头部装置 |
CN108155125B (zh) * | 2017-12-25 | 2020-07-21 | 北京中电科电子装备有限公司 | 一种半导体芯片贴片装置 |
JP7112341B2 (ja) * | 2019-01-23 | 2022-08-03 | 東レエンジニアリング株式会社 | 実装装置および実装方法 |
CN111669961A (zh) * | 2019-03-06 | 2020-09-15 | 苏州旭创科技有限公司 | 用于自动贴片机的吸嘴及自动贴片机 |
JP7291577B2 (ja) * | 2019-08-28 | 2023-06-15 | 芝浦メカトロニクス株式会社 | 移送装置および実装装置 |
KR102427131B1 (ko) * | 2019-10-25 | 2022-07-29 | 정라파엘 | 칩 본딩 장치 |
KR102387983B1 (ko) * | 2020-01-13 | 2022-04-18 | 정라파엘 | 이송 유닛 및 이를 포함하는 칩 본딩 장치 |
CN113053765A (zh) * | 2021-03-08 | 2021-06-29 | 常州雷射激光设备有限公司 | 一种用于半导体二极管芯片的检测设备 |
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WO2003041478A1 (fr) * | 2001-11-05 | 2003-05-15 | Toray Engineering Co., Ltd. | Procede et dispositif de montage |
US20050274869A1 (en) * | 2002-04-04 | 2005-12-15 | Toray Engineering Co., Ltd. | Alignment method and mounting method using the alignment method |
JP2011071225A (ja) * | 2009-09-24 | 2011-04-07 | Bondtech Inc | アライメント装置 |
JP2012138423A (ja) * | 2010-12-24 | 2012-07-19 | Bondtech Inc | 接合装置および接合方法 |
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JP4315752B2 (ja) * | 2003-08-21 | 2009-08-19 | Juki株式会社 | 電子部品実装装置 |
IT1392992B1 (it) * | 2009-02-23 | 2012-04-02 | Applied Materials Inc | Procedimento e apparecchiatura per la stampa serigrafica di uno schema a strato multiplo |
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JP2020034362A (ja) * | 2018-08-29 | 2020-03-05 | ヤマハ発動機株式会社 | 認識装置、表面実装機および認識対象の位置認識方法 |
JP7181027B2 (ja) | 2018-08-29 | 2022-11-30 | ヤマハ発動機株式会社 | 認識装置、表面実装機および認識対象の位置認識方法 |
WO2020090957A1 (ja) * | 2018-11-01 | 2020-05-07 | ヤマハモーターロボティクスホールディングス株式会社 | 電子部品実装装置 |
CN113287191A (zh) * | 2018-11-01 | 2021-08-20 | 株式会社新川 | 电子零件封装装置 |
JPWO2020090957A1 (ja) * | 2018-11-01 | 2021-09-02 | 株式会社新川 | 電子部品実装装置 |
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CN107045988B (zh) | 2019-04-19 |
TWI627683B (zh) | 2018-06-21 |
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