JP2017112238A5 - - Google Patents

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Publication number
JP2017112238A5
JP2017112238A5 JP2015245786A JP2015245786A JP2017112238A5 JP 2017112238 A5 JP2017112238 A5 JP 2017112238A5 JP 2015245786 A JP2015245786 A JP 2015245786A JP 2015245786 A JP2015245786 A JP 2015245786A JP 2017112238 A5 JP2017112238 A5 JP 2017112238A5
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JP
Japan
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time
processing apparatus
plasma processing
series data
component
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JP2015245786A
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English (en)
Japanese (ja)
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JP2017112238A (ja
JP6650258B2 (ja
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Priority to JP2015245786A priority Critical patent/JP6650258B2/ja
Priority claimed from JP2015245786A external-priority patent/JP6650258B2/ja
Priority to KR1020160122799A priority patent/KR101835437B1/ko
Priority to US15/277,272 priority patent/US9934946B2/en
Priority to TW105131351A priority patent/TWI612554B/zh
Publication of JP2017112238A publication Critical patent/JP2017112238A/ja
Publication of JP2017112238A5 publication Critical patent/JP2017112238A5/ja
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Publication of JP6650258B2 publication Critical patent/JP6650258B2/ja
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JP2015245786A 2015-12-17 2015-12-17 プラズマ処理装置及びプラズマ処理装置の運転方法 Active JP6650258B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015245786A JP6650258B2 (ja) 2015-12-17 2015-12-17 プラズマ処理装置及びプラズマ処理装置の運転方法
KR1020160122799A KR101835437B1 (ko) 2015-12-17 2016-09-26 플라스마 처리 장치 및 플라스마 처리 장치의 운전 방법
US15/277,272 US9934946B2 (en) 2015-12-17 2016-09-27 Plasma processing apparatus and operating method of plasma processing apparatus
TW105131351A TWI612554B (zh) 2015-12-17 2016-09-29 電漿處理裝置及電漿處理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015245786A JP6650258B2 (ja) 2015-12-17 2015-12-17 プラズマ処理装置及びプラズマ処理装置の運転方法

Publications (3)

Publication Number Publication Date
JP2017112238A JP2017112238A (ja) 2017-06-22
JP2017112238A5 true JP2017112238A5 (https=) 2019-02-14
JP6650258B2 JP6650258B2 (ja) 2020-02-19

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JP2015245786A Active JP6650258B2 (ja) 2015-12-17 2015-12-17 プラズマ処理装置及びプラズマ処理装置の運転方法

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US (1) US9934946B2 (https=)
JP (1) JP6650258B2 (https=)
KR (1) KR101835437B1 (https=)
TW (1) TWI612554B (https=)

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Publication number Priority date Publication date Assignee Title
JP6239294B2 (ja) * 2013-07-18 2017-11-29 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法
JP6173851B2 (ja) * 2013-09-20 2017-08-02 株式会社日立ハイテクノロジーズ 分析方法およびプラズマエッチング装置
WO2019099541A1 (en) * 2017-11-16 2019-05-23 Applied Materials, Inc. Predictive filter for polishing pad wear rate monitoring
CN111801774B (zh) * 2019-02-08 2023-06-23 株式会社日立高新技术 蚀刻处理装置、蚀刻处理方法及检测器
CN112885694B (zh) * 2019-11-29 2025-10-03 东京毅力科创株式会社 夹具、处理系统及处理方法
KR102429079B1 (ko) * 2019-12-23 2022-08-03 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리에 이용하는 파장 선택 방법
JP7467292B2 (ja) * 2020-03-13 2024-04-15 東京エレクトロン株式会社 解析装置、解析方法及び解析プログラム
TWI895368B (zh) * 2020-03-13 2025-09-01 日商東京威力科創股份有限公司 解析裝置、解析方法及解析程式
US12062530B2 (en) * 2020-06-25 2024-08-13 Hitachi High-Tech Corporation Vacuum processing apparatus and vacuum processing method
KR102515864B1 (ko) * 2020-09-17 2023-03-31 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
CN115349164B (zh) * 2021-03-15 2026-03-20 株式会社日立高新技术 等离子处理装置以及等离子处理方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6160621A (en) * 1999-09-30 2000-12-12 Lam Research Corporation Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
CN1287430C (zh) * 2001-06-15 2006-11-29 东京毅力科创株式会社 干蚀刻方法
US6903826B2 (en) * 2001-09-06 2005-06-07 Hitachi, Ltd. Method and apparatus for determining endpoint of semiconductor element fabricating process
JP4833687B2 (ja) * 2006-02-27 2011-12-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2008218898A (ja) * 2007-03-07 2008-09-18 Hitachi High-Technologies Corp プラズマ処理装置
AU2008333886A1 (en) * 2007-12-03 2009-06-11 Abbott Medical Optics Inc. Medical product management methods
US8858727B2 (en) 2008-07-28 2014-10-14 Bsh Bosch Und Siemens Hausgeraete Gmbh Dishwasher machine comprising a sorption drying device
JP5383265B2 (ja) * 2009-03-17 2014-01-08 株式会社日立ハイテクノロジーズ エッチング装置、分析装置、エッチング処理方法、およびエッチング処理プログラム
JP5665746B2 (ja) * 2009-08-06 2015-02-04 芝浦メカトロニクス株式会社 プラズマエッチング装置及びプラズマエッチング方法
JP5411215B2 (ja) * 2011-08-01 2014-02-12 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9887071B2 (en) * 2011-12-16 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-zone EPD detectors
JP6177513B2 (ja) * 2012-09-28 2017-08-09 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN104736744B (zh) 2012-10-17 2017-06-06 东京毅力科创株式会社 使用多变量分析的等离子体蚀刻终点检测
JP6186152B2 (ja) * 2013-03-29 2017-08-23 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6239294B2 (ja) * 2013-07-18 2017-11-29 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法

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