JP2015211139A5 - - Google Patents

Download PDF

Info

Publication number
JP2015211139A5
JP2015211139A5 JP2014092095A JP2014092095A JP2015211139A5 JP 2015211139 A5 JP2015211139 A5 JP 2015211139A5 JP 2014092095 A JP2014092095 A JP 2014092095A JP 2014092095 A JP2014092095 A JP 2014092095A JP 2015211139 A5 JP2015211139 A5 JP 2015211139A5
Authority
JP
Japan
Prior art keywords
frequency power
wafer
amount
dry etching
heat input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014092095A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015211139A (ja
JP6200849B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2014092095A priority Critical patent/JP6200849B2/ja
Priority claimed from JP2014092095A external-priority patent/JP6200849B2/ja
Publication of JP2015211139A publication Critical patent/JP2015211139A/ja
Publication of JP2015211139A5 publication Critical patent/JP2015211139A5/ja
Application granted granted Critical
Publication of JP6200849B2 publication Critical patent/JP6200849B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014092095A 2014-04-25 2014-04-25 プラズマ処理装置およびドライエッチング方法 Active JP6200849B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014092095A JP6200849B2 (ja) 2014-04-25 2014-04-25 プラズマ処理装置およびドライエッチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014092095A JP6200849B2 (ja) 2014-04-25 2014-04-25 プラズマ処理装置およびドライエッチング方法

Publications (3)

Publication Number Publication Date
JP2015211139A JP2015211139A (ja) 2015-11-24
JP2015211139A5 true JP2015211139A5 (https=) 2017-01-19
JP6200849B2 JP6200849B2 (ja) 2017-09-20

Family

ID=54613121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014092095A Active JP6200849B2 (ja) 2014-04-25 2014-04-25 プラズマ処理装置およびドライエッチング方法

Country Status (1)

Country Link
JP (1) JP6200849B2 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017127233A1 (en) * 2016-01-20 2017-07-27 Applied Materials, Inc. Hybrid carbon hardmask for lateral hardmask recess reduction
WO2018037799A1 (ja) * 2016-08-25 2018-03-01 日本ゼオン株式会社 プラズマエッチング方法
JP6928548B2 (ja) * 2017-12-27 2021-09-01 東京エレクトロン株式会社 エッチング方法
US20200203234A1 (en) * 2018-12-14 2020-06-25 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Method of forming high aspect ratio features in semiconductor substrate
JP6959999B2 (ja) * 2019-04-19 2021-11-05 株式会社日立ハイテク プラズマ処理方法
JP7296277B2 (ja) * 2019-08-22 2023-06-22 東京エレクトロン株式会社 エッチングする方法、デバイス製造方法、及びプラズマ処理装置
WO2021162871A1 (en) * 2020-02-13 2021-08-19 Lam Research Corporation High aspect ratio etch with infinite selectivity
KR102866849B1 (ko) 2020-02-19 2025-10-01 램 리써치 코포레이션 그래핀 통합 (graphene integration)
US11295960B1 (en) * 2021-03-09 2022-04-05 Hitachi High-Tech Corporation Etching method
WO2023199371A1 (ja) * 2022-04-11 2023-10-19 株式会社日立ハイテク プラズマ処理方法
WO2026070514A1 (ja) * 2024-09-25 2026-04-02 東京エレクトロン株式会社 プラズマ処理装置及びエッチング方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置
JP2008071951A (ja) * 2006-09-14 2008-03-27 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP5491648B2 (ja) * 2006-10-06 2014-05-14 東京エレクトロン株式会社 プラズマエッチング装置およびプラズマエッチング方法
JP2009193989A (ja) * 2008-02-12 2009-08-27 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
JP2010205967A (ja) * 2009-03-04 2010-09-16 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体

Similar Documents

Publication Publication Date Title
JP2015211139A5 (https=)
JP2016092342A5 (https=)
JP2015154047A5 (https=)
JP2019165123A5 (https=)
SG10201804322UA (en) Variable frequency microwave (vfm) processes and applications in semiconductor thin film fabrications
EA201692450A1 (ru) Способ получения подложки, покрытой функциональным слоем при помощи жертвенного слоя
JP2020017565A5 (https=)
JP2017143261A5 (https=)
JP2018120925A5 (https=)
SG10201804282PA (en) Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof
SG10201908096UA (en) Ultrathin atomic layer deposition film accuracy thickness control
JP2015070045A5 (https=)
JP2015023104A5 (https=)
TW201130042A (en) Substrate processing method and substrate processing apparatus
JP2013511128A5 (https=)
WO2014137905A3 (en) Method and apparatus for plasma dicing a semi-conductor wafer
JP2014045063A5 (https=)
JP2011096700A5 (https=)
JP2015018885A5 (https=)
US9412565B2 (en) Temperature measuring method and plasma processing system
CN110854010A (zh) 冷却晶圆的方法、装置和半导体处理设备
JP2015065393A5 (https=)
JP2018017902A5 (https=)
JP2014175509A5 (ja) 半導体装置の製造方法、基板処理装置およびプログラム
JP2015061005A5 (ja) 分析方法およびプラズマエッチング装置