JP6200849B2 - プラズマ処理装置およびドライエッチング方法 - Google Patents

プラズマ処理装置およびドライエッチング方法 Download PDF

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JP6200849B2
JP6200849B2 JP2014092095A JP2014092095A JP6200849B2 JP 6200849 B2 JP6200849 B2 JP 6200849B2 JP 2014092095 A JP2014092095 A JP 2014092095A JP 2014092095 A JP2014092095 A JP 2014092095A JP 6200849 B2 JP6200849 B2 JP 6200849B2
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etching
wafer
film
amount
frequency power
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JP2015211139A5 (https=
JP2015211139A (ja
Inventor
栗原　優
優 栗原
森　政士
政士 森
荒瀬　高男
高男 荒瀬
慎也 河村
慎也 河村
忠雄 森本
忠雄 森本
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Hitachi High Tech Corp
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JP2014092095A 2014-04-25 2014-04-25 プラズマ処理装置およびドライエッチング方法 Active JP6200849B2 (ja)

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JP2015211139A JP2015211139A (ja) 2015-11-24
JP2015211139A5 JP2015211139A5 (https=) 2017-01-19
JP6200849B2 true JP6200849B2 (ja) 2017-09-20

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017127233A1 (en) * 2016-01-20 2017-07-27 Applied Materials, Inc. Hybrid carbon hardmask for lateral hardmask recess reduction
EP3506335A4 (en) * 2016-08-25 2020-04-08 Zeon Corporation PLASMA ETCHING PROCESS
JP6928548B2 (ja) * 2017-12-27 2021-09-01 東京エレクトロン株式会社 エッチング方法
US20200203234A1 (en) * 2018-12-14 2020-06-25 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Method of forming high aspect ratio features in semiconductor substrate
CN112119484B (zh) * 2019-04-19 2024-03-22 株式会社日立高新技术 等离子体处理方法
JP7296277B2 (ja) * 2019-08-22 2023-06-22 東京エレクトロン株式会社 エッチングする方法、デバイス製造方法、及びプラズマ処理装置
CN115380365A (zh) 2020-02-13 2022-11-22 朗姆研究公司 具有无穷大选择性的高深宽比蚀刻
CN115428141A (zh) 2020-02-19 2022-12-02 朗姆研究公司 石墨烯整合
US11295960B1 (en) * 2021-03-09 2022-04-05 Hitachi High-Tech Corporation Etching method
US12374532B2 (en) 2022-04-11 2025-07-29 Hitachi High-Tech Corporation Plasma processing method
WO2026070514A1 (ja) * 2024-09-25 2026-04-02 東京エレクトロン株式会社 プラズマ処理装置及びエッチング方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置
JP2008071951A (ja) * 2006-09-14 2008-03-27 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP5491648B2 (ja) * 2006-10-06 2014-05-14 東京エレクトロン株式会社 プラズマエッチング装置およびプラズマエッチング方法
JP2009193989A (ja) * 2008-02-12 2009-08-27 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
JP2010205967A (ja) * 2009-03-04 2010-09-16 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体

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