SG10201804282PA - Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof - Google Patents

Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof

Info

Publication number
SG10201804282PA
SG10201804282PA SG10201804282PA SG10201804282PA SG10201804282PA SG 10201804282P A SG10201804282P A SG 10201804282PA SG 10201804282P A SG10201804282P A SG 10201804282PA SG 10201804282P A SG10201804282P A SG 10201804282PA SG 10201804282P A SG10201804282P A SG 10201804282PA
Authority
SG
Singapore
Prior art keywords
plasma processing
optical fiber
component
processing apparatus
processing chamber
Prior art date
Application number
SG10201804282PA
Inventor
Singh Harmeet
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201804282PA publication Critical patent/SG10201804282PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)

Abstract

OF THE DISCLOSURE PLASMA PROCESSING APPARATUS AND COMPONENT THEREOF INCLUDING AN OPTICAL FIBER FOR DETERMINING A TEMPERATURE THEREOF A plasma processing apparatus for processing semiconductor substrates comprises a plasma processing chamber in which a semiconductor substrate is processed. A process gas source is in fluid communication with the plasma processing chamber and is adapted to supply a process gas into the plasma processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the plasma processing chamber. Process gas and bypro ducts of the plasma processing are exhausted from the plasma processing chamber through a vacuum port. At least one component of the plasma processing apparatus comprises a laterally extending optical fiber beneath a plasma exposed surface of the component wherein spatial temperature measurements of the surface are desired to be taken, and a temperature monitoring arrangement coupled to the optical fiber so as to monitor temperatures at different locations along the optical fiber. FIG. 1
SG10201804282PA 2013-12-16 2014-11-25 Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof SG10201804282PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/107,641 US10217615B2 (en) 2013-12-16 2013-12-16 Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof

Publications (1)

Publication Number Publication Date
SG10201804282PA true SG10201804282PA (en) 2018-07-30

Family

ID=53369398

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201407823YA SG10201407823YA (en) 2013-12-16 2014-11-25 Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof
SG10201804282PA SG10201804282PA (en) 2013-12-16 2014-11-25 Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201407823YA SG10201407823YA (en) 2013-12-16 2014-11-25 Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof

Country Status (4)

Country Link
US (1) US10217615B2 (en)
KR (1) KR102378049B1 (en)
SG (2) SG10201407823YA (en)
TW (1) TWI649823B (en)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
TW201448108A (en) 2013-03-12 2014-12-16 Applied Materials Inc Multi zone heating and cooling ESC for plasma process chamber
WO2014164449A1 (en) 2013-03-13 2014-10-09 Applied Materials, Inc. Multi-zone heated esc with independent edge zones
TW201518538A (en) 2013-11-11 2015-05-16 Applied Materials Inc Pixelated cooling, temperature controlled substrate support assembly
US10460968B2 (en) 2013-12-02 2019-10-29 Applied Materials, Inc. Electrostatic chuck with variable pixelated magnetic field
US9622375B2 (en) 2013-12-31 2017-04-11 Applied Materials, Inc. Electrostatic chuck with external flow adjustments for improved temperature distribution
US9520315B2 (en) 2013-12-31 2016-12-13 Applied Materials, Inc. Electrostatic chuck with internal flow adjustments for improved temperature distribution
US11158526B2 (en) 2014-02-07 2021-10-26 Applied Materials, Inc. Temperature controlled substrate support assembly
US9472410B2 (en) 2014-03-05 2016-10-18 Applied Materials, Inc. Pixelated capacitance controlled ESC
US9543171B2 (en) * 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
US9415519B2 (en) * 2014-07-01 2016-08-16 Varian Semiconductor Equipment Associates, Inc. Composite end effector and method of making a composite end effector
CN106471609B (en) 2014-07-02 2019-10-15 应用材料公司 For using the apparatus, system and method for the substrate temperature control of insertion optical fiber optical device and epoxy resin optical diffuser
JP6335341B2 (en) 2014-07-23 2018-05-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Variable temperature controlled substrate support assembly
US10861682B2 (en) 2014-07-31 2020-12-08 iSenseCloud, Inc. Test wafer with optical fiber with Bragg Grating sensors
US9872341B2 (en) 2014-11-26 2018-01-16 Applied Materials, Inc. Consolidated filter arrangement for devices in an RF environment
CN106653670B (en) * 2015-07-17 2019-03-12 中微半导体设备(上海)有限公司 A kind of electro-static sucker device
KR102423818B1 (en) 2015-12-18 2022-07-21 삼성전자주식회사 A electrostatic chuck assembly, a semiconductor manufacturing apparatus having the same, and a temperature mesuring method for electrostatic chuck
US20170211185A1 (en) * 2016-01-22 2017-07-27 Applied Materials, Inc. Ceramic showerhead with embedded conductive layers
US10973088B2 (en) * 2016-04-18 2021-04-06 Applied Materials, Inc. Optically heated substrate support assembly with removable optical fibers
JP6238097B1 (en) * 2016-07-20 2017-11-29 Toto株式会社 Electrostatic chuck
US10685861B2 (en) 2016-08-26 2020-06-16 Applied Materials, Inc. Direct optical heating of substrates through optical guide
US10403476B2 (en) 2016-11-09 2019-09-03 Lam Research Corporation Active showerhead
US11069545B2 (en) * 2017-01-19 2021-07-20 Tokyo Electron Limited Substrate processing apparatus, temperature control method, and temperature control program
USD875054S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD875053S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD875055S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
KR102435888B1 (en) 2017-07-04 2022-08-25 삼성전자주식회사 Electro-static chuck, apparatus for processing substrate and manufacturing method of semiconductor device using the same
CN109427635B (en) * 2017-08-29 2020-09-11 创意电子股份有限公司 Semiconductor element test equipment and its carrying device
US11236422B2 (en) * 2017-11-17 2022-02-01 Lam Research Corporation Multi zone substrate support for ALD film property correction and tunability
JP6578391B2 (en) * 2018-02-23 2019-09-18 日本特殊陶業株式会社 Semiconductor manufacturing equipment component, semiconductor manufacturing equipment component temperature distribution measuring method, and semiconductor manufacturing equipment temperature distribution measuring device
US10851458B2 (en) * 2018-03-27 2020-12-01 Lam Research Corporation Connector for substrate support with embedded temperature sensors
US10930478B2 (en) * 2018-05-24 2021-02-23 Lam Research Corporation Apparatus with optical cavity for determining process rate
KR102524258B1 (en) * 2018-06-18 2023-04-21 삼성전자주식회사 Temperature control unit, temperature measurement unit and plasma processing apparatus including the same
WO2020010153A1 (en) 2018-07-05 2020-01-09 Lam Research Corporation Dynamic temperature control of substrate support in substrate processing system
CN111009454B (en) * 2018-10-05 2024-05-17 东京毅力科创株式会社 Plasma processing apparatus, monitoring method, and recording medium
KR102161537B1 (en) * 2018-11-16 2020-10-05 (주)엠크래프츠 Sample table for electron microscope
KR20240028468A (en) * 2021-07-08 2024-03-05 어플라이드 머티어리얼스, 인코포레이티드 Showerhead assembly with circulating gas channels
JP2023018347A (en) * 2021-07-27 2023-02-08 キオクシア株式会社 Substrate support device and substrate processing device
TWI796780B (en) * 2021-09-07 2023-03-21 南韓商自適應等離子體技術公司 An electrostatic chuck with multi heating areas
WO2023192405A1 (en) * 2022-03-31 2023-10-05 Lam Research Corporation Dual sensor wafer temperature measurement system
CN116153842B (en) * 2023-04-20 2023-06-23 涌淳半导体(无锡)有限公司 Adsorption device for temperature measurement, temperature measurement method thereof and electronic device

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS601918A (en) 1983-06-17 1985-01-08 Fuji Electric Co Ltd Matrix-type selecting circuit
JPS621176A (en) 1985-06-26 1987-01-07 Hitachi Ltd Head supporting device
JP3440475B2 (en) 1992-06-29 2003-08-25 アイシン精機株式会社 Human body cleaning device
US5361130A (en) * 1992-11-04 1994-11-01 The United States Of America As Represented By The Secretary Of The Navy Fiber grating-based sensing system with interferometric wavelength-shift detection
JP3565231B2 (en) * 1994-08-03 2004-09-15 住友電気工業株式会社 Optical fiber temperature sensor and fixture
KR200159921Y1 (en) 1996-11-23 1999-11-01 이세원 Up/down control circuit of lifter
US6204920B1 (en) * 1996-12-20 2001-03-20 Mcdonnell Douglas Corporation Optical fiber sensor system
US6891124B2 (en) * 2000-01-05 2005-05-10 Tokyo Electron Limited Method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer
US6733594B2 (en) 2000-12-21 2004-05-11 Lam Research Corporation Method and apparatus for reducing He backside faults during wafer processing
EP1391140B1 (en) 2001-04-30 2012-10-10 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6847014B1 (en) 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6921724B2 (en) 2002-04-02 2005-07-26 Lam Research Corporation Variable temperature processes for tunable electrostatic chuck
JP4102311B2 (en) 2002-04-17 2008-06-18 株式会社ハタ研削 Optical fiber array
US6647160B1 (en) * 2002-06-17 2003-11-11 National Chiao Tung University Fiber bragg grating sensor system
US7734439B2 (en) 2002-06-24 2010-06-08 Mattson Technology, Inc. System and process for calibrating pyrometers in thermal processing chambers
JP3924524B2 (en) 2002-10-29 2007-06-06 京セラ株式会社 Wafer heating apparatus and manufacturing method thereof
KR20060026027A (en) * 2003-05-29 2006-03-22 어플라이드 머티어리얼스, 인코포레이티드 Serial routing of optical signals
US7567740B2 (en) 2003-07-14 2009-07-28 Massachusetts Institute Of Technology Thermal sensing fiber devices
KR20050053464A (en) 2003-12-01 2005-06-08 정준호 Two terminal semiconductor memory using cascaded diodes
KR20050121913A (en) 2004-06-23 2005-12-28 삼성전자주식회사 Apparatus for baking
KR100550019B1 (en) * 2004-07-21 2006-02-08 주식회사 코미코 Ceramic electrostatic chuck equipment having edge projected portion for preventing arc and method for manufacturing the equipment
CA2518173A1 (en) 2004-09-02 2006-03-02 National Research Council Of Canada Simultaneous interrogation of multi wavelength-modulated fiber optical sensors by modulating an arrayed waveguide grating based demultiplexer
US7187816B2 (en) 2004-12-13 2007-03-06 Purdue Research Foundation In-fiber whitelight interferometry using long-period fiber grating
KR100632544B1 (en) 2004-12-15 2006-10-09 현대자동차주식회사 DC driver gate driver circuit
US20070032081A1 (en) 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
JP2007081160A (en) 2005-09-14 2007-03-29 Fujitsu Ltd Method for manufacturing semiconductor device
JP4483751B2 (en) 2005-09-16 2010-06-16 株式会社デンソー Power supply reverse connection protection circuit
US7956310B2 (en) 2005-09-30 2011-06-07 Tokyo Electron Limited Stage, substrate processing apparatus, plasma processing apparatus, control method for stage, control method for plasma processing apparatus, and storage media
US8157951B2 (en) 2005-10-11 2012-04-17 Applied Materials, Inc. Capacitively coupled plasma reactor having very agile wafer temperature control
EP1974200A2 (en) 2006-01-03 2008-10-01 The Trustees of Columbia University in the City of New York Systems and methods for sensing properties of a workpiece and embedding a photonic sensor in metal
US7266260B2 (en) 2006-01-05 2007-09-04 The Hong Kong Polytechnic University FBG sensor interrogation method using semiconductor optical amplifier in ring cavity configuration
US7883632B2 (en) 2006-03-22 2011-02-08 Tokyo Electron Limited Plasma processing method
US20070280605A1 (en) 2006-05-31 2007-12-06 Mendoza Edgar A Fiber bragg grating sensor interrogator and manufacture thereof
US7297894B1 (en) * 2006-09-25 2007-11-20 Tokyo Electron Limited Method for multi-step temperature control of a substrate
JPWO2008084637A1 (en) * 2007-01-10 2010-04-30 住友電気工業株式会社 Method for measuring temperature distribution of object and sensor unit
US7732728B2 (en) 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
US7787726B2 (en) * 2007-03-14 2010-08-31 General Electric Company Temperature sensing fabric
TWI508129B (en) 2007-10-31 2015-11-11 Lam Res Corp Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body
KR20100103627A (en) 2007-12-21 2010-09-27 어플라이드 머티어리얼스, 인코포레이티드 Method and apparatus for controlling temperature of a substrate
JP4450106B1 (en) * 2008-03-11 2010-04-14 東京エレクトロン株式会社 Mounting table structure and processing device
JP5307445B2 (en) 2008-04-28 2013-10-02 日本碍子株式会社 Substrate holder and method for manufacturing the same
US8240913B2 (en) 2008-09-24 2012-08-14 General Electric Company Fiber optic sensing device and method
US9155134B2 (en) 2008-10-17 2015-10-06 Applied Materials, Inc. Methods and apparatus for rapidly responsive heat control in plasma processing devices
WO2010072293A2 (en) 2008-12-23 2010-07-01 Waterford Institute Of Technology Fiber bragg grating temperature and strain sensor
JP2010153730A (en) 2008-12-26 2010-07-08 Omron Corp Wiring structure, heater driving device, measuring device, and control system
EP2202472A1 (en) 2008-12-29 2010-06-30 Ludwig-Maximilians-Universität München Freeze dryer monitoring device
CN102483337B (en) 2009-07-16 2015-11-25 哈米德瑞萨·埃洛莫哈迈德 A kind of Fibre Optical Sensor and manufacture method
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
KR101841378B1 (en) 2009-12-15 2018-03-22 램 리써치 코포레이션 Adjusting substrate temperature to improve cd uniformity
US20110267598A1 (en) 2010-04-30 2011-11-03 Vestas Wind Systems A/S Optical sensor system and detecting method for an enclosed semiconductor device module
US8303176B2 (en) 2010-05-11 2012-11-06 Vladimir Kochergin Cryogenic fiber optic temperature sensor and method of manufacturing the same
US8879067B2 (en) 2010-09-01 2014-11-04 Lake Shore Cryotronics, Inc. Wavelength dependent optical force sensing
US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
US8389416B2 (en) 2010-11-22 2013-03-05 Tokyo Electron Limited Process for etching silicon with selectivity to silicon-germanium
US8971359B2 (en) 2011-04-29 2015-03-03 Bae Systems Information And Electronic Systems Integration Inc. Temperature control of a fiber laser system
US9046417B2 (en) 2011-06-24 2015-06-02 Tokyo Electron Limited Temperature measuring system, substrate processing apparatus and temperature measuring method
US8624168B2 (en) 2011-09-20 2014-01-07 Lam Research Corporation Heating plate with diode planar heater zones for semiconductor processing
US8461674B2 (en) 2011-09-21 2013-06-11 Lam Research Corporation Thermal plate with planar thermal zones for semiconductor processing
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
JP5891006B2 (en) 2011-11-01 2016-03-22 東京エレクトロン株式会社 Optical interference system, substrate processing apparatus, and measuring method
NL2009824A (en) 2011-12-21 2013-06-24 Asml Netherlands Bv Lithographic apparatus with a deformation sensor.
US9007227B2 (en) 2012-01-04 2015-04-14 The Boeing Company Multimode fiber interrogator
US9324589B2 (en) 2012-02-28 2016-04-26 Lam Research Corporation Multiplexed heater array using AC drive for semiconductor processing
JP6014661B2 (en) * 2012-05-25 2016-10-25 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
US10049948B2 (en) 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
US20140356985A1 (en) 2013-06-03 2014-12-04 Lam Research Corporation Temperature controlled substrate support assembly

Also Published As

Publication number Publication date
US20150170977A1 (en) 2015-06-18
TWI649823B (en) 2019-02-01
SG10201407823YA (en) 2015-07-30
TW201539607A (en) 2015-10-16
US10217615B2 (en) 2019-02-26
KR20150070036A (en) 2015-06-24
KR102378049B1 (en) 2022-03-23

Similar Documents

Publication Publication Date Title
SG10201804282PA (en) Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof
SG10201402882PA (en) Chamber wall of a plasma processing apparatus including a flowing protective liquid layer
TW200943459A (en) Advanced process sensing and control using near infrared spectral reflectometry
WO2012125275A3 (en) Apparatus for monitoring and controlling substrate temperature
TWD189313S (en) Susceptor for semiconductor substrate processing apparatus
WO2014158370A3 (en) Temperature measurement in multi-zone heater
PH12016502600A1 (en) Component handling assembly and method of handling components
WO2014025719A3 (en) Test specimen holder for high temperature environments
WO2014158253A3 (en) Thermal treated sandwich structure layer to improve adhesive strength
WO2012166727A3 (en) Substrate freeze dry apparatus and method
GB201209024D0 (en) Method of handling a substrate
SG11201406391YA (en) Apparatus for growing diamonds by microwave plasma chemical vapour deposition process and substrate stage used therein
SG11201808114VA (en) Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
MX348874B (en) Methods for forming absorbent articles with nonwoven substrates.
WO2012134070A3 (en) Gas-injection apparatus, atomic layer deposition apparatus, and atomic layer deposition method using the apparatus
IN2015DN01149A (en)
TW201612976A (en) Etching method and storage medium
MY168827A (en) Apparatus and method for isolating articles
SG11201901034XA (en) Substrate processing apparatus, metal member, and method of manufacturing semiconductor device
SG10201701124TA (en) Substrate treating apparatus and substrate treating method
WO2011093617A3 (en) Vacuum deposition apparatus
SG10201810902WA (en) Dual auxiliary dopant inlets on epi chamber
JP2012089591A5 (en) Vacuum processing method
TWD183008S (en) Heater for substrate processing equipment
TW201613114A (en) Method and apparatus for structuring the topside and underside of a semiconductor substrate