WO2012134070A3 - Gas-injection apparatus, atomic layer deposition apparatus, and atomic layer deposition method using the apparatus - Google Patents

Gas-injection apparatus, atomic layer deposition apparatus, and atomic layer deposition method using the apparatus Download PDF

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Publication number
WO2012134070A3
WO2012134070A3 PCT/KR2012/001659 KR2012001659W WO2012134070A3 WO 2012134070 A3 WO2012134070 A3 WO 2012134070A3 KR 2012001659 W KR2012001659 W KR 2012001659W WO 2012134070 A3 WO2012134070 A3 WO 2012134070A3
Authority
WO
WIPO (PCT)
Prior art keywords
gas
atomic layer
layer deposition
injection apparatus
injection
Prior art date
Application number
PCT/KR2012/001659
Other languages
French (fr)
Korean (ko)
Other versions
WO2012134070A2 (en
Inventor
전형탁
박태용
이재상
최동진
전희영
박진규
Original Assignee
한양대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한양대학교 산학협력단 filed Critical 한양대학교 산학협력단
Priority to CN201280016242.9A priority Critical patent/CN103649368B/en
Publication of WO2012134070A2 publication Critical patent/WO2012134070A2/en
Publication of WO2012134070A3 publication Critical patent/WO2012134070A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

The present invention relates to a gas-injection apparatus, to an atomic layer deposition apparatus, and to an atomic layer deposition method using the apparatus. The gas-injection apparatus is configured in the shape of a single pipe. Gas is supplied onto a substrate through the central portion of the gas-injection apparatus, and simultaneously, gas supplied through gas-intake holes formed in specific portions along an outer surface of a gas supply pipe is suctioned. Thus, when the gas-injection apparatus is disposed near the substrate, the supply and suction of the gas may be performed at the same time. Here, since a deposition process is performed at a normal pressure, it is unnecessary to provide an additional apparatus and set aside time to produce a vacuum state. Also, since consecutive processes are able to be carried out, pre- or post-processes may be performed together at the same time. In addition, a plurality of source injection apparatuses may be provided to form a multi-component compound. In this case, the type of heat source and supplied heat energy may be individually adapted for each source decomposition temperature.
PCT/KR2012/001659 2011-03-31 2012-03-07 Gas-injection apparatus, atomic layer deposition apparatus, and atomic layer deposition method using the apparatus WO2012134070A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201280016242.9A CN103649368B (en) 2011-03-31 2012-03-07 Gas injection device, apparatus for atomic layer deposition and use the Atomic layer deposition method of this apparatus for atomic layer deposition

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0029416 2011-03-31
KR1020110029416A KR101311983B1 (en) 2011-03-31 2011-03-31 Gas injection apparatus, atomic layer deposition apparatus and the method of atomic layer deposition using the same

Publications (2)

Publication Number Publication Date
WO2012134070A2 WO2012134070A2 (en) 2012-10-04
WO2012134070A3 true WO2012134070A3 (en) 2012-11-29

Family

ID=46932043

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/001659 WO2012134070A2 (en) 2011-03-31 2012-03-07 Gas-injection apparatus, atomic layer deposition apparatus, and atomic layer deposition method using the apparatus

Country Status (3)

Country Link
KR (1) KR101311983B1 (en)
CN (1) CN103649368B (en)
WO (1) WO2012134070A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101541155B1 (en) * 2012-12-13 2015-08-06 엘아이지인베니아 주식회사 atomic layer deposition apparatus
KR101538372B1 (en) * 2012-12-13 2015-07-22 엘아이지인베니아 주식회사 atomic layer deposition apparatus
KR101541154B1 (en) * 2012-12-13 2015-08-03 엘아이지인베니아 주식회사 atomic layer deposition apparatus
KR101407068B1 (en) * 2013-01-14 2014-06-13 한양대학교 산학협력단 FAST REMOTE PLASMA ATOmic layer deposition apparatus
KR101557483B1 (en) * 2014-02-10 2015-10-07 엘아이지인베니아 주식회사 Atomic layer deposition apparatus
KR20160072630A (en) 2014-12-15 2016-06-23 인베니아 주식회사 Apparatus for depositing atomic layer
KR102007866B1 (en) * 2015-05-07 2019-08-06 에이피시스템 주식회사 Apparatus for atomic layer depositing and the method for atomic layer depositing using the same
KR101715223B1 (en) * 2015-05-15 2017-03-14 고려대학교 산학협력단 Apparatus for selectively depositing atomic layer for local area on the substrate

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0927482A (en) * 1995-07-11 1997-01-28 Speedfam Co Ltd Plasma etching apparatus
US6022414A (en) * 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
JP2001230211A (en) * 2000-02-17 2001-08-24 Sharp Corp Film forming equipment
US20040035358A1 (en) * 2002-08-23 2004-02-26 Cem Basceri Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
KR100805345B1 (en) * 2006-11-10 2008-02-20 주식회사 비아트론 Apparatus for doping metal in atmospheric pressure
JP2010092952A (en) * 2008-10-06 2010-04-22 Ihi Corp Device and method for manufacturing white led

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101818334B (en) * 2002-01-17 2012-12-12 松德沃技术公司 ALD apparatus and method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6022414A (en) * 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
JPH0927482A (en) * 1995-07-11 1997-01-28 Speedfam Co Ltd Plasma etching apparatus
JP2001230211A (en) * 2000-02-17 2001-08-24 Sharp Corp Film forming equipment
US20040035358A1 (en) * 2002-08-23 2004-02-26 Cem Basceri Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
KR100805345B1 (en) * 2006-11-10 2008-02-20 주식회사 비아트론 Apparatus for doping metal in atmospheric pressure
JP2010092952A (en) * 2008-10-06 2010-04-22 Ihi Corp Device and method for manufacturing white led

Also Published As

Publication number Publication date
CN103649368B (en) 2016-03-02
WO2012134070A2 (en) 2012-10-04
KR20120111108A (en) 2012-10-10
KR101311983B1 (en) 2013-09-30
CN103649368A (en) 2014-03-19

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