JP5307445B2 - Substrate holder and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate retainer, capable of suppressing a temperature distribution on a surface of the substrate retainer and obtaining high uniform heating, and to provide a method for manufacturing the retainer. <P>SOLUTION: The system includes a base 11, constituted of a ceramic sintered compact, on an upper surface of which the substrate is loaded; a heater 13 embedded in the base 11; a cooling plate 20 that cools the substrate; and a binding film 30, where thermal conductivity of a substance disposed between the substrate 11 and the cooling plate 20 is varied. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a substrate holder and a method for manufacturing the same.

  In a manufacturing process of an electronic device such as a semiconductor device or a liquid crystal device, a substrate such as a semiconductor substrate or a glass substrate is processed by the manufacturing device. In a plasma etching apparatus such as reactive ion etching (RIE), processing is performed by placing a substrate on a substrate holder. The substrate holder includes a ceramic substrate having high corrosion resistance. An electrostatic chuck (ESC) electrode and a heating element are embedded in the ceramic substrate. The ceramic substrate is mounted on a cooling plate. During the plasma etching process, the substrate adsorbed on the upper surface of the substrate holder is heated by a heating element and controlled to a processing temperature while being cooled by flowing a coolant through a flow path provided in a cooling plate.

  Ideally, the heating element should be placed so that the entire surface generates heat uniformly, but in practice it is necessary to provide an insulation distance between the wires, and it is necessary to avoid lift pin holes, gas holes, etc. Therefore, the pattern of the heating element is restricted, and the temperature distribution on the surface of the substrate holder is generated between the portion where the heating element is present and the portion where the heating element is absent, so that the heat uniformity is deteriorated. Further, the resistance of the heating element embedded in the ceramic substrate changes during firing, but the degree of change is different in the plane, so that the heat uniformity deteriorates.

  In order to alleviate this temperature distribution, the thermal conductivity of the bonding film that joins the ceramic substrate and the cooling plate is changed to a circumferential shape, a gap is provided in part of the bonding film, and the gap There is known a method of flowing a gas through (see, for example, Patent Document 1).

However, the temperature distribution is unique for each product, and it is difficult to suppress the temperature distribution on the surface of the substrate holder and obtain high thermal uniformity.
Utility Model Registration No. 3129419

  An object of the present invention is to provide a substrate holder that can suppress the temperature distribution on the surface of the substrate holder and obtain high thermal uniformity and a method for manufacturing the same.

  According to one aspect of the present invention, (a) a base made of a ceramic sintered body on which a substrate is placed, (b) a heating element embedded in the base, and (c) a cooling plate for cooling the substrate And (d) a substrate holder provided with a bonding film that is disposed between the substrate and the cooling plate and has a distribution of thermal conductivity changed.

  According to another aspect of the present invention, there is provided a first step between (a) a step of producing a base body made of a ceramic sintered body on which a substrate is placed, and (b) a cooling plate for cooling the base body and the substrate. (C) a step of measuring the temperature distribution on the surface of the substrate, (d) a step of separating the substrate and the cooling plate from the first bonding film, and (e) a temperature distribution. And (f) sandwiching the second bonding film between the substrate and the cooling plate, and a step of producing the second bonding film in which the thermal conductivity distribution of the first bonding film is changed so as to relax There is provided a method of manufacturing a substrate holder including a step of bonding each of a base body and a cooling plate to a second bonding film.

  ADVANTAGE OF THE INVENTION According to this invention, the substrate holder which can suppress the temperature distribution of the substrate holder surface, and can obtain high thermal uniformity can be provided, and its manufacturing method.

  Next, embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like are different from the actual ones. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

  Further, the embodiments described below exemplify apparatuses and methods for embodying the technical idea of the present invention, and the technical idea of the present invention includes the material, shape, structure, The layout is not specified as follows. The technical idea of the present invention can be variously modified within the scope of the claims.

  As shown in FIGS. 1 and 2, a substrate holder 10 according to an embodiment of the present invention includes a base body 11 made of a ceramic sintered body on which a substrate is placed, and a heating element embedded in the base body 11. 13, a cooling plate 20 that cools the substrate, and a bonding film 30 that is disposed between the base 11 and the cooling plate 20 and has a changed thermal conductivity distribution.

  Inside the base 11, an electrostatic chuck electrode (ESC electrode) 12 is embedded on the upper surface side, and a heating element 13 is embedded on the lower surface side. Electrode terminals 40 and 41 are connected to the ESC electrode 12 and the heating element 13, respectively. The cooling plate 20 is provided with a flow path 21 for flowing a coolant for cooling the substrate.

As materials for the ESC electrode 12 and the heating element 13, conductive materials such as refractory metals such as tungsten (W), molybdenum (Mo), niobium (Nb), refractory metal carbides such as tungsten carbide (WC), or the like A mixture of ceramic powder such as alumina (Al ₂ O ₃ ) or aluminum nitride (AlN) with refractory metal or refractory metal carbide is used. As the shape of the heating element 13, various shapes such as a coil shape, a planar shape such as a mesh, a screen printing body, or a foil can be adopted.

  The film thickness of the bonding film 30 is about 0.05 to 0.5 mm. As a material for the bonding film 30, a silicone-based or acrylic-based adhesive having a thermal conductivity of about 0.2 to 1.0 W / mK can be used.

As the base 11, aluminum nitride (AlN), alumina (Al ₂ O ₃ ), silicon carbide (SiC), silicon nitride (Si ₃ N ₄ ), sialon (SiAlON), beryllia (BeO), boron nitride (BN), etc. A ceramic sintered body is used.

  As shown in FIG. 3, the substrate holder 10 shown in FIGS. 1 and 2 is mounted on a holding member 57 of a processing chamber 51 of a plasma etching apparatus, for example. The ESC electrode 12 is connected to a DC power source 42 outside the processing chamber 51 through an electrode terminal 40. The heating element 13 is connected to an external AC power supply 43 through the electrode terminal 41. The cooling plate 44 is connected to an external high frequency power supply 44. The flow path 21 is connected to an external supply device (not shown) that supplies and circulates the refrigerant.

  The substrate 50 is placed on the upper surface of the base 11 and electrostatically chucked by the ESC electrode 12. A coolant is supplied to the flow path 21 and the substrate 50 is cooled. The temperature of the substrate 50 is controlled by the heating element 13. A counter electrode 52 is provided so as to face the substrate 50. Etching gas or the like is introduced into the counter electrode 52 from the gas pipe 54. A plurality of gas introduction holes 53 are provided on the surface of the counter electrode 52 facing the substrate. An etching gas is introduced into the processing chamber 51 from the gas introduction hole 53, and plasma is excited between the surface of the substrate 50 and the grounded counter electrode 52 by the high frequency power supply 44 connected to the cooling plate 20.

  Next, an example of a method for manufacturing the substrate holder 10 shown in FIGS. 1 and 2 will be described with reference to FIGS.

  First, a binder, water, a dispersing agent, etc. are added and mixed with the raw material powder of an alumina sintered compact, and a slurry is produced. As the raw material powder, alumina powder, mixed powder of alumina powder and zirconia powder, mixed powder of alumina powder and magnesia powder, mixed powder of alumina powder and silica powder, and the like can be used. However, the amount of alumina contained in the raw material powder is preferably 95% by mass or more, and more preferably 98% by mass or more. The purity of the alumina powder is preferably 99.5% by mass or more, and more preferably 99.9% by mass or more. Moreover, it is preferable that the average particle diameter of an alumina powder or mixed powder is 0.2-1.0 micrometer.

  Furthermore, you may add carbon, the organic binder used as carbon, etc. so that the carbon amount contained in the alumina sintered body obtained may be 500-5000 ppm. Thereby, the alumina sintered compact which has high intensity | strength and exhibits uniform black can be obtained.

  Then, the slurry is granulated by a spray granulation method or the like to obtain granulated granules. Using the granulated granules, an alumina molded body is produced by a molding method such as a die molding method, a cold isostatic pressing (CIP) method, a slip casting method, or the like. The alumina molded body is fired by a sintering method such as a hot press method or an atmospheric pressure sintering method in an inert gas atmosphere such as nitrogen gas or argon gas, under reduced pressure, or in an oxidizing atmosphere such as air. As shown in FIG. 4, an alumina sintered body 11a is formed.

  The firing temperature of the alumina molded body is preferably 1500-1800 ° C, and the firing temperature of the alumina molded body is more preferably 1700-1800 ° C. By firing the alumina molded body at a high temperature in this way, the alumina sintered body 11a can be sintered more densely, and the volume resistivity of the alumina sintered body 11a can be improved.

  Next, as shown in FIG. 5, the ESC electrode 12 is formed on the alumina sintered body 11a. For example, the ESC electrode 12 can be formed by printing a printing paste containing electrode material powder (high melting point material powder) on the surface of the alumina sintered body 11a by using a screen printing method or the like. This is preferable because the flatness of the ESC electrode 12 can be improved and various shapes of the ESC electrode 12 can be easily formed with high accuracy.

  In this case, it is preferable to use a printing paste in which alumina powder is mixed with electrode material powder (high melting point material powder). According to this, the thermal expansion coefficients of the ESC electrode 12 and the alumina sintered body 11a can be made closer, and the adhesion between the alumina sintered body 11a and the ESC electrode 12 can be improved. Moreover, the thermal contraction rate of the printing paste in the subsequent baking step can be reduced. In this case, the total amount of alumina powder contained in the printing paste is preferably 5 to 30% by mass. According to this, a high adhesion improvement effect can be obtained without affecting the function as the ESC electrode 12.

  Alternatively, a bulk body or a sheet (foil) of electrode material (high melting point material) is placed on the surface of the alumina sintered body 11a, or a thin film of electrode material (high melting point material) is placed on the surface of the alumina sintered body 11a. The ESC electrode 12 can also be formed by forming by CVD or PVD. Before forming the ESC electrode 12, it is preferable to grind the surface of the alumina sintered body 11a on which the electrostatic electrode is formed to form a smooth surface having a flatness of 10 μm or less.

  Next, the raw material powder of an alumina sintered body is prepared, and the granulated granule 11b is produced. As shown in FIG. 6, the alumina sintered body 11 a on which the ESC electrode 12 is formed is accommodated in the mold accommodating portion 61. The granulated granule 11b is filled on the alumina sintered body 11a and the ESC electrode 12.

  And it presses from the upper direction of the granulated granule 11b using the cover body part 62, and as shown in FIG. 7, the alumina molded object 11b is shape | molded by the metal mold | die molding method. At the same time, the alumina sintered body 11a, the ESC electrode 12, and the alumina molded body 11b can be integrated. In addition, the alumina molded body 11b is formed using the granulated granule 11b, and is placed on the alumina sintered body 11a and the ESC electrode 12 and pressed to thereby obtain the alumina sintered body 11a, the ESC electrode 12, and the alumina. The molded body 11b may be integrated.

  Next, the alumina sintered body 11a, the ESC electrode 12, and the alumina molded body 11b are integrally fired by a hot press method, and the alumina sintered body 11a, the ESC electrode 12, and the alumina sintered body 11b are integrated. A sintered body is produced. Thus, a part of formation process of the alumina sintered body 11b and an integration process are performed simultaneously.

  For example, firing can be performed in an inert gas atmosphere such as nitrogen gas or argon gas while applying pressure in a uniaxial direction. The firing temperature at the time of producing the integral sintered body, which is also the firing temperature of the alumina molded body, is preferably 1400 to 1700 ° C, and more preferably 1400 to 1600 ° C. By producing the integrally sintered body by low-temperature firing in this way, excessive grain growth of the alumina sintered body 11b can be prevented, and the mechanical strength of the alumina sintered body 11b can be improved. The temperature increase rate and the pressure applied during firing can be the same as when the alumina sintered body 11a is fired.

  In place of the alumina sintered body 11a, an alumina calcined body is formed, an ESC electrode 12 is formed on the alumina calcined body, and an alumina molded body is formed on the alumina calcined body and the ESC electrode 12. The calcined body, the ESC electrode 12, and the alumina molded body may be fired integrally. In this case, the alumina calcined body is formed by setting the firing temperature lower than when the alumina sintered body 11a is formed or by setting the firing time shorter than when the alumina sintered body 11a is formed. it can.

  Next, as shown in FIG. 8, the heating element 13 is formed on the alumina sintered body 11b. For example, the heating element 13 can be formed by printing a printing paste containing electrode material powder (high melting point material powder) on the surface of the alumina sintered body 11b using a screen printing method or the like.

  Next, the raw material powder of an alumina sintered compact is prepared, and the granulated granule 11c is produced. As shown in FIG. 9, the alumina sintered bodies 11 a and 11 b in which the ESC electrode 12 is embedded and the heating element 13 is formed are accommodated in the mold accommodating portion 63. The granulated granule 11 c is filled on the alumina sintered body 11 b and the heating element 13.

  And it presses from the upper direction of the granulated granule 11c using the cover part 64, and as shown in FIG. 10, the alumina molded object 11c is shape | molded by the metal mold | die molding method. At the same time, the alumina sintered bodies 11a and 11b, the ESC electrode 12, the heating element 13 and the alumina molded body 11c can be integrated. In addition, the alumina molded body 11c is formed using the granulated granule 11c, and is placed on the alumina sintered body 11b and the heat generating body 13 and pressed, whereby the alumina sintered bodies 11a and 11b, the ESC electrode 12, and the heat generated. The body 13 and the alumina molded body 11c may be integrated.

  Next, the alumina sintered bodies 11a and 11b, the ESC electrode 12, the heating element 13 and the alumina molded body 11c are integrally fired by a hot press method, and the alumina sintered bodies 11a, 11b and 11c, the ESC electrode 12 and the heating element are fired. 13 integral sintered bodies are produced. Thus, a part of formation process of the alumina sintered body 11c and an integration process are performed simultaneously.

  Next, as shown in FIG. 11, openings for exposing the ESC electrodes 12 and openings for exposing the heating elements 13 are opened in the alumina sintered bodies 11b and 11c. Electrode terminals 40 and 41 are connected to the ESC electrode 12 and the heating element 13 through the openings, respectively.

  Next, a bonding film (first bonding film) 30 such as a silicone or acrylic adhesive having a thickness of about 0.05 mm to about 0.5 mm is prepared. As shown in FIG. The first bonding film 30 is sandwiched between the lower surface of the substrate and the upper surface of the cooling plate 20. Then, using the clamping device 60 comprising the clamping member 61 in contact with the substrate 11, the pin 62 penetrating the clamping member 61 and the cooling plate 20, and the fastening bolts 63 and 64 attached to both ends of the pin 62, the substrate is used. 11. Clamp the first bonding film 30 and the cooling plate 20.

  With the substrate 11, the first bonding film 30, and the cooling plate 20 clamped, the thermal uniformity evaluation of the surface of the substrate 11 is performed. As shown in FIG. 13, the substrate holder 10 is mounted in the processing chamber 51. A coolant is passed through the flow path 21 of the cooling plate 20. After the processing chamber 51 is evacuated, the heater power is turned on and the surface of the substrate 11 is heated by the heating element 13. When the temperature is stabilized, the temperature distribution on the surface of the substrate 11 is measured through the measurement window 55 using a temperature measuring device 56 such as an infrared radiation thermometer (IR camera). For example, a temperature distribution as shown in FIG. 14 is measured. Thereafter, the first bonding film 30 is removed from the base 11 and the cooling plate 20.

  Based on the measured temperature distribution on the surface of the substrate 11, by using a finite element method (FEM) analysis or the like, what kind of thermal conductivity distribution the first bonding film 30 has is a uniform temperature distribution on the surface of the substrate 11. calculate. Then, the surface of the first bonding film 30 is divided into a plurality of regions according to the measured temperature distribution on the surface of the substrate 11. Using a laser processing machine, small holes having a diameter of about 1 mm are opened so as to be evenly distributed in the divided regions at different densities depending on the calculation results such as FEM analysis, and the second bonding film 30 is produced. To do.

  Thereafter, the second bonding film 30 is sandwiched between the lower surface of the substrate 11 and the upper surface of the cooling plate 20, and the substrate 11, the cooling plate 20, and the second bonding film 30 are bonded to each other by thermal pressure welding or the like. In this way, the substrate holder 10 shown in FIGS. 1 and 2 can be manufactured.

  According to the substrate holder 10 and the method for manufacturing the same according to the embodiment of the present invention, the thermal conductivity of the bonding film 30 is changed for each region from the measured temperature distribution on the surface of the substrate 11, thereby Even if the temperature distribution differs for each product, the temperature distribution can be made uniform, so that the heat uniformity on the surface of the substrate 11 can be improved.

  Note that the first bonding film 30 and the second bonding film 30 may be the same bonding film or different bonding films.

  Next, examples of the method for manufacturing the substrate holder 10 according to the embodiment of the present invention will be described. In a state where the first bonding film 30 is clamped by being sandwiched between the base 11 and the cooling plate 20, it is set in the processing chamber 51 as shown in FIG. After the processing chamber 51 is evacuated, the heater power is turned on and the temperature is raised to 74 ° C. When the temperature was stabilized, the temperature distribution on the surface of the substrate 11 was measured using the IR camera 56. FIG. 14 shows the measurement results. The maximum temperature distribution on the surface of the substrate 11 having a diameter of 300 mm was 9.2 ° C.

  The bonding film 30 was divided into regions every 2 ° C. according to the measured temperature distribution. In this example, the highest temperature was 78.7 ° C., and the lowest temperature was 69.5 ° C., so that the in-plane of the bonding film 30 was 79-79 as shown in FIGS. It divided | segmented into the area | region of 77 degreeC, 77-75, 75-73, 73-71, 71-69 degreeC.

  Here, the temperature difference ΔT between the upper surface and the lower surface in the thickness direction of each material portion when the heater power is turned on is Q for the heater power, l for the material thickness, λ for the thermal conductivity of the material, Assuming that the cross-sectional area is S, it can be calculated as shown in Equation (1).

ΔT = (Ql) / (λS) (1)

The bonding film 30 has a heater power (Q) of 3 KW, a material thickness (l) of 300 μm, a material thermal conductivity (λ) of 0.2 W / mK, and a material cross-sectional area (S) of 700 cm ² . The temperature difference ΔT is 64 ° C. Further, regarding the substrate 11 (Al ₂ O ₃ ), the heater power (Q) is 3 KW, the material thickness (l) is 3 mm, the material thermal conductivity (λ) is 25 W / mK, and the material cross-sectional area (S) is 700 cm ² and the temperature difference ΔT is 5 ° C. Accordingly, when the temperature of the cooling plate 20 is 5 ° C. and 3 KW of heater power is applied, the surface temperature of the substrate 11 becomes about 74 ° C. due to the temperature difference between the bonding film 30 and the substrate 11.

  Since the temperature difference ΔT of the bonding film 30 is 64 ° C., small holes may be opened in the bonding film 30 at a density of 2/64 = 3% in order to increase the temperature of the surface of the substrate 11 by 2 ° C. Therefore, a small hole is not opened in the region of 79 to 77 ° C. having the highest temperature shown in FIG. 15, and 77 to 75, 75 to 73, 73 to 71, 71 to 69 shown in FIGS. For each region at 0 ° C., small holes having a diameter of 1 mm are opened with a density of 3%, 6%, 9%, and 12% using a laser processing machine so as to be evenly distributed in each region. A bonding film 30 was prepared. Thereafter, the second bonding film 30 was bonded to the base body 11 and the cooling plate 20 to produce the substrate holder 10.

  FIG. 20 shows the result of measuring the temperature distribution on the surface of the substrate 11 with respect to the substrate holder 10 using an IR camera. The temperature distribution at the time of bonding with the second bonding film 30 was improved from 9.2 ° C. when measured using the first bonding film 30 to 3.1 ° C.

(Modification)
The above-described method for manufacturing the substrate holder 10 according to the embodiment of the present invention is an example, and various methods can be used. For example, the steps of FIGS. 21 to 25 may be used instead of the steps described with reference to FIGS.

  As shown in FIGS. 21 and 25, two alumina sintered bodies 11d and 11e are prepared, and the ESC electrode 12 and the heating element 13 are printed on the surfaces of the two alumina sintered bodies 11d and 11e, respectively.

  As shown in FIG. 23, the mold accommodating portion 65 is sandwiched between the surface on which the ESC electrode 12 of the alumina sintered body 11d is formed and the surface on which the heating element 13 of the alumina sintered body 11e is formed. The granule 11f is accommodated. And it presses from the upper direction of the granulated granule 11f using the cover part 66, and as shown in FIG. 24, the alumina molded object 11f is shape | molded by the metal mold | die molding method.

  Subsequently, the alumina sintered bodies 11e and 11d, the ESC electrode 12, the heating element 13 and the alumina molded body 11f are integrally fired by a hot press method to produce an integrally sintered body. Thereafter, as shown in FIG. 25, openings for exposing the ESC electrodes 12 and openings for exposing the heating elements 13 are opened in the alumina sintered bodies 11c and 11d. Electrode terminals 40 and 41 are connected to the ESC electrode 12 and the heating element 13 through the openings, respectively. In this way, a substrate 11 similar to the structure shown in FIG. 11 can be manufactured.

(Other embodiments)
As described above, the present invention has been described by the embodiments and the modifications. However, it should not be understood that the description and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

  In the embodiment of the present invention, the case where small holes are opened in the bonding film 30 has been described. Instead of opening small holes, the distribution of the amount of filler contained in the bonding film 30 may be changed. By inserting fillers with different contents for each region where the in-plane of the bonding film 30 is divided, the distribution of the thermal conductivity of the bonding film 30 is changed as in the case of opening the small holes, thereby suppressing the temperature distribution. Can do.

  It goes without saying that the present invention includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

It is a plane schematic diagram showing an example of a substrate holder concerning an embodiment of the invention. It is the schematic which shows the AA cross section of the board | substrate holding body shown in FIG. It is a figure which shows an example of the plasma processing apparatus using the substrate holding body which concerns on embodiment of this invention. It is sectional drawing (the 1) which shows an example of the manufacturing method of the board | substrate holding body which concerns on embodiment of this invention. It is sectional drawing (the 2) which shows an example of the manufacturing method of the board | substrate holding body which concerns on embodiment of this invention. It is sectional drawing (the 3) which shows an example of the manufacturing method of the board | substrate holding body which concerns on embodiment of this invention. It is sectional drawing (the 4) which shows an example of the manufacturing method of the board | substrate holding body which concerns on embodiment of this invention. It is sectional drawing (the 5) which shows an example of the manufacturing method of the board | substrate holding body which concerns on embodiment of this invention. It is sectional drawing (the 6) which shows an example of the manufacturing method of the board | substrate holding body which concerns on embodiment of this invention. It is sectional drawing (the 7) which shows an example of the manufacturing method of the board | substrate holding body which concerns on embodiment of this invention. It is sectional drawing (the 8) which shows an example of the manufacturing method of the board | substrate holding body which concerns on embodiment of this invention. It is sectional drawing (the 9) which shows an example of the manufacturing method of the board | substrate holding body which concerns on embodiment of this invention. It is a figure which shows an example of the plasma processing apparatus used for the measurement of the temperature distribution of the substrate holding body which concerns on embodiment of this invention. It is the schematic which shows an example of the measurement result of the temperature distribution of the board | substrate holding body which concerns on embodiment of this invention. It is the schematic (the 1) which shows an example of the division area | region of the joining film | membrane of the board | substrate holding body which concerns on embodiment of this invention. It is the schematic (the 2) which shows an example of the division area | region of the joining film | membrane of the board | substrate holding body which concerns on embodiment of this invention. It is the schematic (the 3) which shows an example of the division area | region of the joining film | membrane of the board | substrate holding body which concerns on embodiment of this invention. It is the schematic (the 4) which shows an example of the division area | region of the joining film | membrane of the board | substrate holding body which concerns on embodiment of this invention. It is the schematic (the 5) which shows an example of the division area | region of the joining film | membrane of the board | substrate holding body which concerns on embodiment of this invention. It is the schematic which shows an example of the measurement result of the temperature distribution of the board | substrate holding body which concerns on embodiment of this invention. It is sectional drawing (the 1) which shows an example of the manufacturing method of the board | substrate holding body which concerns on the modification of embodiment of this invention. It is sectional drawing (the 2) which shows an example of the manufacturing method of the board | substrate holding body which concerns on the modification of embodiment of this invention. It is sectional drawing (the 3) which shows an example of the manufacturing method of the board | substrate holding body which concerns on the modification of embodiment of this invention. It is sectional drawing (the 4) which shows an example of the manufacturing method of the board | substrate holding body which concerns on the modification of embodiment of this invention. It is sectional drawing (the 5) which shows an example of the manufacturing method of the board | substrate holding body which concerns on the modification of embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Substrate holding body 11 ... Base | substrate 11a, 11b, 11c, 11d, 11e, 11d, 11f ... Alumina molded object (alumina sintered compact)
12 ... Electrostatic chuck electrode (ESC electrode)
DESCRIPTION OF SYMBOLS 13 ... Heat generating body 20 ... Cooling plate 21 ... Flow path 30 ... Bonding film 40, 41 ... Electrode terminal 42 ... DC power supply 43 ... AC power supply 44 ... High frequency power supply 50 ... Substrate 51 ... Processing chamber 52 ... Counter electrode 53 ... Gas introduction hole 54 ... Gas piping 55 ... Measuring window 56 ... Temperature measuring device 57 ... Holding member 60 ... Clamping device 61 ... Clamping member 62 ... Pin 63, 64 ... Clamping bolt

Claims (2)

A substrate made of a ceramic sintered body on which a substrate is placed;
A heating element embedded in the substrate;
A cooling plate for cooling the substrate;
A bonding film arranged between the substrate and the cooling plate and having a distribution of thermal conductivity changed ,
The bonding film has an opening for forming the thermal conductivity distribution;
The substrate holder is characterized in that the openings are provided at different densities for each region obtained by dividing the in-plane of the bonding film . Producing a substrate made of a ceramic sintered body on which a substrate is placed;
Clamping the first bonding film between the base and a cooling plate for cooling the substrate; and
Measuring the temperature distribution of the substrate surface;
Separating the substrate and the cooling plate from the first bonding film;
Producing a second bonding film in which the distribution of thermal conductivity of the first bonding film is changed so as to relax the temperature distribution;
Look including the step of bonding the respective said second bonding film of the substrate and the cooling plate across the second bonding film between said cooling plate and said substrate,
The step of producing the second bonding film includes:
Dividing the surface of the first bonding film into a plurality of regions according to the temperature distribution,
A manufacturing method of a substrate holder , wherein openings are formed in the first bonding film at different densities for each of the plurality of regions .

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