JP6578391B2 - Semiconductor manufacturing equipment component, semiconductor manufacturing equipment component temperature distribution measuring method, and semiconductor manufacturing equipment temperature distribution measuring device - Google Patents

Description

  The technology disclosed in this specification relates to a component for a semiconductor manufacturing apparatus.

  As a component for a semiconductor manufacturing apparatus, for example, an electrostatic chuck that holds and holds a wafer by electrostatic attraction is known. The electrostatic chuck includes a ceramic member, a base member, a joint portion for joining the ceramic member and the base member, and a chuck electrode provided inside the ceramic member, and a voltage is applied to the chuck electrode. The wafer is adsorbed and held on the surface of the ceramic member (hereinafter referred to as “adsorption surface”) by utilizing the electrostatic attractive force generated by this.

  If the temperature of the wafer held on the chucking surface of the electrostatic chuck does not reach the desired temperature, the accuracy of each process (film formation, etching, etc.) on the wafer may be reduced, so the temperature distribution of the electrostatic chuck is measured. It is required to do. Conventionally, a technique is known in which a plurality of temperature sensors are arranged inside an electrostatic chuck and the temperature of the electrostatic chuck is measured using the plurality of temperature sensors (see, for example, Patent Document 1).

Special table 2017-529705 gazette

  In the above-described electrostatic chuck in which a plurality of temperature sensors are arranged, only one specific temperature in the electrostatic chuck can be measured for each temperature sensor. For this reason, in order to measure the temperature distribution in a predetermined region of the electrostatic chuck, it is necessary to use a large number of temperature sensors. As a result, there is a problem that the configuration for measuring the temperature distribution becomes complicated.

  Such a problem is not limited to an electrostatic chuck that holds a wafer using electrostatic attraction, but a semiconductor including a first member made of ceramics, a second member, and a joint. This is a problem common to parts for manufacturing equipment in general.

  The present specification discloses a technique capable of solving at least a part of the problems described above.

  The technology disclosed in this specification can be implemented as the following forms.

(1) A component for a semiconductor manufacturing apparatus disclosed in the present specification includes a substantially planar first surface that is substantially perpendicular to the first direction, and a substantially planar first surface opposite to the first surface. A first member made of ceramics and a second surface having a substantially planar third surface disposed to face the second surface of the first member. In a component for a semiconductor manufacturing apparatus, comprising: a member; and a joining portion that is disposed between the second surface and the third surface and joins the first member and the second member. And a linear optical transmission medium having a parallel portion disposed in the joint and extending in a plane direction substantially parallel to the first surface, wherein at least one end side is outside the joint. The optical transmission medium exposed to the surface. The component for a semiconductor manufacturing apparatus includes a linear optical transmission medium that has a parallel portion that is disposed at the joint and extends in a plane direction substantially parallel to the first surface. At least one end side of the optical transmission medium is exposed to the outside of the joint. Based on the light intensity ratio of Stokes light and anti-Stokes light in Raman scattered light sequentially output from one end by projecting pulse light to at least one end of the optical transmission medium, The continuous temperature distribution in the region along the parallel part of the optical transmission medium among the members can be measured.

(2) In the semiconductor manufacturing device component, the semiconductor manufacturing device component is a holding device that holds an object on the first surface of the first member, and is parallel to the optical transmission medium. The portion may be arranged in a position closer to the first member than the second member in the first direction. According to this semiconductor manufacturing apparatus component, the parallel portion of the optical transmission medium is located in the middle between the first member and the second member, or compared to the configuration in which the optical transmission medium is disposed closer to the second member side. The temperature distribution in the first member can be measured more accurately.

(3) In the component for semiconductor manufacturing apparatus, the difference between the thermal conductivity of the optical transmission medium and the thermal conductivity of the joint is that the thermal conductivity of the optical transmission medium and the thermal conductivity of the first member. The difference may be smaller than the difference between the thermal conductivity of the optical transmission medium and the thermal conductivity of the second member. According to the component for a semiconductor manufacturing apparatus, the difference between the thermal conductivity of the optical transmission medium and the thermal conductivity of the joint is a difference between the thermal conductivity of the optical transmission medium and the thermal conductivity of the first member, and Compared to a configuration that is larger than at least one of the differences between the thermal conductivity of the optical transmission medium and the second member, the variation in the thermal conductivity in the joint due to the presence of the optical transmission medium is suppressed. As a result, variation in the endothermic effect from the first member to the second member can be suppressed.

(4) In the semiconductor manufacturing apparatus component, the cross-sectional shape substantially orthogonal to the axial direction of the optical transmission medium may be a substantially rectangular shape. According to this semiconductor manufacturing apparatus component, for example, compared to a configuration in which the shape of the cross section substantially orthogonal to the axial direction of the optical transmission medium is circular, a gap is less likely to be generated between the optical transmission medium and the joint portion. It can suppress that the measurement accuracy of the temperature distribution in a 1st member falls due to the clearance gap between an optical transmission medium and a junction part.

(5) In the semiconductor manufacturing apparatus component, the cross-sectional shape substantially perpendicular to the axial direction of the optical transmission medium may be a substantially circular shape. According to the semiconductor manufacturing apparatus component, for example, the light transmission loss in the optical transmission medium is small compared to the configuration in which the cross-sectional shape substantially orthogonal to the axial direction of the optical transmission medium is rectangular. It can suppress that the measurement accuracy of the temperature distribution in a 1st member falls due to.

(6) In the component for a semiconductor manufacturing apparatus, the second member has a through hole that opens in the third surface and penetrates the second member. At least one end side may be exposed to the outside of the joint through the through hole. According to the semiconductor manufacturing apparatus component, using the through-hole formed in the second member, the pulse light is projected to at least one end of the optical transmission medium and the Raman scattered light is received. Can do.

(7) In the semiconductor manufacturing apparatus component, the optical transmission medium includes an optical fiber and an optical waveguide, and the total length of the optical waveguide is shorter than the total length of the optical fiber; The maximum curvature as viewed in the first direction may be configured to satisfy at least one of the maximum curvature as viewed in the first direction of the optical waveguide. According to this semiconductor manufacturing apparatus component, if the total length of the optical waveguide is shorter than the total length of the optical fiber, the optical transmission loss of the optical waveguide is shorter than the configuration in which the total length of the optical waveguide is longer than the total length of the optical fiber. It can suppress that the measurement accuracy of the temperature distribution in a 1st member falls due to. Further, if the maximum curvature of the optical fiber in the first direction view is smaller than the maximum curvature of the optical waveguide in the first direction view, the maximum curvature of the optical fiber in the first direction view is the first direction of the optical waveguide. Compared to a configuration that is larger than the maximum curvature of vision, it is possible to suppress a decrease in measurement accuracy of the temperature distribution in the first member due to light transmission loss due to bending of the optical fiber.

(8) A method for measuring a temperature distribution of a component for a semiconductor manufacturing apparatus disclosed in the present specification includes a substantially planar first surface that is substantially perpendicular to the first direction, and a side opposite to the first surface. A first member made of ceramics, and a third member having a substantially planar shape disposed so as to face the second surface of the first member. Semiconductor manufacturing comprising: a second member having a surface; and a joint portion disposed between the second surface and the third surface and joining the first member and the second member In the method for measuring temperature distribution of device parts, the joint is a linear optical transmission medium having a parallel portion extending in a plane direction substantially parallel to the first surface, and at least one end portion The optical transmission medium having a side exposed to the outside of the joint is disposed, and the optical transmission medium The step of projecting pulsed light to at least one end, receiving the Raman scattered light sequentially output from the at least one end where the pulsed light was projected, and the Raman scattered light sequentially output Measuring a temperature distribution of the first member based on a light intensity ratio between the Stokes light and the anti-Stokes light.

(9) A temperature distribution measuring device for a component for a semiconductor manufacturing apparatus disclosed in the present specification includes a substantially planar first surface substantially perpendicular to a first direction and a side opposite to the first surface. A first member made of ceramics, and a third member having a substantially planar shape disposed so as to face the second surface of the first member. A second member having a surface, a joint disposed between the second surface and the third surface, and joining the first member and the second member; and A linear optical transmission medium that is arranged and has a parallel portion extending in a plane direction substantially parallel to the first surface, wherein at least one end portion side is exposed to the outside of the joint portion. An optical transmission medium; a light projecting unit that projects pulsed light onto the at least one end of the optical transmission medium; A light receiving unit that receives Raman scattered light sequentially output from the at least one end portion where the pulsed light is projected in the optical transmission medium, and a Stokes light in the Raman scattered light sequentially received by the light receiving unit. A measurement unit that measures a temperature distribution of the first member based on a light intensity ratio with Stokes light.

It is a perspective view which shows roughly the external appearance structure of the electrostatic chuck 10 in 1st Embodiment. It is explanatory drawing which shows roughly the XZ cross-sectional structure of the electrostatic chuck system 1 and the electrostatic chuck 10 in 1st Embodiment. It is explanatory drawing which shows roughly the XY cross-sectional structure of the electrostatic chuck 10 in 1st Embodiment. It is explanatory drawing which shows the verification result of the bending loss and fracture | rupture probability of two types of optical fibers 1 and 2. FIG. It is explanatory drawing which shows the relationship between the temperature distribution along the optical path of the optical fiber 600, and the change of the optical intensity of Stokes light L21 and anti-Stokes light L22. It is a perspective view which shows roughly the external appearance structure of 10 A of electrostatic chucks in 2nd Embodiment. It is explanatory drawing which shows roughly the XZ cross-sectional structure of 1 A of electrostatic chuck systems and 10 A of electrostatic chucks in 2nd Embodiment. It is explanatory drawing which shows roughly the XY cross-sectional structure of 10 A of electrostatic chucks in 2nd Embodiment.

A. First embodiment:
A-1. Configuration of the electrostatic chuck 10:
FIG. 1 is a perspective view schematically showing an external configuration of the electrostatic chuck 10 in the first embodiment, and FIG. 2 is an XZ sectional configuration of the electrostatic chuck system 1 and the electrostatic chuck 10 in the first embodiment. FIG. 3 is an explanatory diagram schematically showing FIG. 3, and FIG. 3 is an explanatory diagram schematically showing an XY cross-sectional configuration of the electrostatic chuck 10 in the first embodiment. 2 shows an XZ sectional configuration of the electrostatic chuck 10 at the position II-II in FIG. 3, and FIG. 3 shows an XY sectional configuration of the electrostatic chuck 10 at the position III-III in FIG. It is shown. In each figure, XYZ axes orthogonal to each other for specifying the direction are shown. In this specification, for convenience, the positive direction of the Z-axis is referred to as the upward direction, and the negative direction of the Z-axis is referred to as the downward direction. However, the electrostatic chuck 10 is actually installed in an orientation different from such an orientation. May be. 2 and 3 further show a first temperature distribution measurement unit 710, a second temperature distribution measurement unit 720, and a heater control unit 800. In FIG. 3, the internal configuration of the second temperature distribution measurement unit 720 is omitted. Hereinafter, a configuration including the electrostatic chuck 10, the temperature distribution measurement units 710 and 720, and the heater control unit 800 is referred to as an electrostatic chuck system 1. The electrostatic chuck system 1 corresponds to a temperature distribution measuring device for parts for semiconductor manufacturing equipment in the claims.

  The electrostatic chuck 10 is an apparatus that attracts and holds an object (for example, a wafer W) by electrostatic attraction, and is used, for example, to fix the wafer W in a vacuum chamber of a semiconductor manufacturing apparatus. The electrostatic chuck 10 includes a ceramic member 100 and a base member 200 arranged in a predetermined arrangement direction (in the present embodiment, the vertical direction (Z-axis direction)). The ceramic member 100 and the base member 200 are disposed such that the lower surface S2 (see FIG. 2) of the ceramic member 100 and the upper surface S3 of the base member 200 face each other in the arrangement direction. The ceramic member 100 corresponds to the first member in the claims, and the base member 200 corresponds to the second member in the claims. Further, the lower surface S2 of the ceramic member 100 corresponds to the second surface in the claims, and the upper surface S3 of the base member 200 corresponds to the third surface in the claims.

  The ceramic member 100 is, for example, a circular flat plate-like member, and is formed of ceramics (for example, alumina, aluminum nitride, or the like). The diameter of the ceramic member 100 is, for example, about 50 mm to 500 mm (usually about 200 mm to 350 mm), and the thickness of the ceramic member 100 is, for example, about 1 mm to 10 mm.

  As shown in FIG. 2, a chuck electrode 400 formed of a conductive material (for example, tungsten or molybdenum) is provided inside the ceramic member 100. The shape of the chuck electrode 400 when viewed in the Z-axis direction is, for example, a substantially circular shape. When a voltage is applied to the chuck electrode 400 from a power source (not shown), electrostatic attraction is generated, and the electrostatic attraction causes the wafer W to face the surface opposite to the lower surface S2 of the ceramic member 100 (hereinafter referred to as “adsorption”). (Referred to as “surface S1”). The adsorption surface S1 of the ceramic member 100 is a planar surface substantially orthogonal to the arrangement direction (Z-axis direction) described above. The adsorption surface S1 of the ceramic member 100 corresponds to the first surface in the claims, and the Z-axis direction corresponds to the first direction in the claims. In the present specification, a direction perpendicular to the Z axis (that is, a direction parallel to the suction surface S1) is referred to as a “plane direction”.

  As shown in FIG. 2, a heater electrode 500 made of a resistance heating element formed of a conductive material (for example, tungsten or molybdenum) is provided inside the ceramic member 100. In the present embodiment, the heater electrode 500 includes a plurality of heaters (not shown). The plurality of heaters are respectively disposed in different regions (segments) in the ceramic member 100 when viewed in the vertical direction (Z direction). When a voltage is applied to the heater electrode 500 from a power source (not shown), the heater electrode 500 generates heat, thereby warming the ceramic member 100 and warming the wafer W held on the suction surface S1 of the ceramic member 100. Thereby, the temperature control of the wafer W is realized. The plurality of heaters can individually adjust the heat generation amount by a heater control unit 800 described later.

  The base member 200 is, for example, a cylindrical member having the same diameter as the ceramic member 100 or a larger diameter than the ceramic member 100, and is formed of metal (aluminum, aluminum alloy, or the like). The diameter of the base member 200 is, for example, about 220 mm to 550 mm (usually 220 mm to 350 mm), and the thickness of the base member 200 is, for example, about 20 mm to 40 mm.

  A coolant channel 210 is formed inside the base member 200. When a coolant (for example, a fluorine-based inert liquid or water) flows through the coolant channel 210, the base member 200 is cooled, and is transmitted between the base member 200 and the ceramic member 100 via an adhesive layer 300 described later. The ceramic member 100 is cooled by heat, and the wafer W held on the suction surface S1 of the ceramic member 100 is cooled. Thereby, the temperature control of the wafer W is realized.

  The ceramic member 100 and the base member 200 are joined to each other by an adhesive layer 300 disposed between the lower surface S2 of the ceramic member 100 and the upper surface S3 of the base member 200. The adhesive layer 300 is made of an adhesive material such as a silicone resin, an acrylic resin, or an epoxy resin. The thickness of the adhesive layer 300 is, for example, about 0.1 mm to 1 mm. The adhesive layer 300 corresponds to the joint portion in the claims. The detailed configuration of the adhesive layer 300 will be described later.

  Next, a configuration for supplying power to the heater electrode 500 will be described. As shown in FIG. 2, a terminal through-hole 24 that opens to the upper surface S <b> 3 of the base member 200 is formed inside the base member 200, and a recess 16 is formed on the lower surface S <b> 2 of the ceramic member 100. The terminal through-hole 24 formed in the base member 200 and the recess 16 formed in the ceramic member 100 constitute an integral hole communicating with each other via the through-hole 32 formed in the adhesive layer 300. Yes. In addition, on the bottom surface of the recess 16 formed in the lower surface S <b> 2 of the ceramic member 100, an electrode pad 52 that is connected to the heater electrode 500 through the via 51 is disposed. A columnar electrode terminal 54 is disposed in the terminal through hole 24 formed in the base member 200, and the electrode terminal 54 is joined to the electrode pad 52. Further, an insulating member 80 that continuously surrounds the electrode terminal 54 is disposed in the terminal through hole 24 of the base member 200 so as to be interposed between the electrode terminal 54 and the surface of the terminal through hole 24. . When the electrostatic chuck 10 is used, a voltage is applied to the heater electrode 500 through a conduction path from a power source (not shown) to the heater electrode 500 through the electrode terminal 54, the electrode pad 52, and the via 51. . Thereby, the heater electrode 500 generates heat. The terminal through hole 24 corresponds to the through hole in the claims.

  The configuration for supplying power to the chuck electrode 400 is the same as the configuration for supplying power to the heater electrode 500. That is, a terminal through hole (not shown) that opens to the upper surface S3 of the base member 200 is formed inside the base member 200, and a recess (not shown) is formed on the lower surface S2 of the ceramic member 100. An electrode pad (not shown) that is electrically connected to the chuck electrode 400 through a via is disposed on the bottom surface of the recess. A columnar electrode terminal (not shown) is disposed in the terminal through-hole formed in the base member 200, and this electrode terminal is joined to the electrode pad. When the electrostatic chuck 10 is used, a voltage is applied to the chuck electrode 400 via a conduction path from a power source (not shown) to the chuck electrode 400 via the electrode terminal, electrode pad, and via. Thereby, an electrostatic attractive force for attracting and fixing the wafer W to the attracting surface S1 is generated.

A-2. Configuration of optical fiber 600:
As shown in FIGS. 2 and 3, the electrostatic chuck 10 further includes an optical fiber 600. The optical fiber 600 is a linear member whose main component is, for example, quartz. The optical fiber 600 may be a single mode or a multimode. Further, the shape (outer shape) of the cross section substantially orthogonal to the axial direction of the optical fiber 600 is substantially circular. Optical fiber 600 includes a buried portion 610, an inner exposed portion 620, and an outer exposed portion 630. The embedded portion 610 is a portion of the optical fiber 600 that is disposed in the adhesive layer 300 and extends in the plane direction. Specifically, the embedded portion 610 is at least partially embedded in the adhesive layer 300 and disposed on the same virtual plane (XY plane) substantially parallel to the adsorption surface S1 of the ceramic member 100. That is, the embedded portion 610 is a portion that is substantially parallel to the suction surface S <b> 1 of the ceramic member 100. The embedded portion 610 is disposed at a position closer to the ceramic member 100 than the base member 200 over the entire length. More specifically, the embedded portion 610 is disposed so as to be in contact with the lower surface S2 of the electrostatic chuck 10 over the entire length. The shape of the embedded portion 610 when viewed in the vertical direction is substantially spiral, and the end on the inner peripheral side of the embedded portion 610 reaches the through hole 32 formed in the adhesive layer 300, and the outer peripheral side of the embedded portion 610. This end reaches the outer peripheral surface of the adhesive layer 300. The optical fiber 600 corresponds to the optical transmission medium in the claims, and the embedded portion 610 corresponds to the parallel portion in the claims.

  Here, in general, an optical fiber includes a core that is a central portion having a large refractive index and a clad that is positioned around the core and has a refractive index smaller than that of the core. Light propagates while repeating total reflection at the boundary between the core and the clad. In general, since the diameter of the optical fiber is usually about 125 μm or less, the optical fiber 600 can be embedded in the adhesive layer 300. The diameter of the optical fiber 600 (that is, the outer diameter of the cladding) is more preferably less than 100 μm and greater than 60 μm. In the configuration in which the diameter of the optical fiber 600 is 100 μm or more, the optical fiber 600 is easy to bend when bent with a large curvature, and even if it is not bent, the bending stress increases so that it is difficult to be fixed in a bent state. Further, in the configuration in which the diameter of the optical fiber 600 is 60 μm or less, the optical fiber 600 is strong against bending, but the strength is reduced, so that the optical fiber 600 is easily cut by a tensile force.

  In general, the diameter of the core is preferably about 10 μm for a single mode optical fiber and about 50 μm for a multimode optical fiber. The single mode optical fiber is particularly preferable when measuring the temperature distribution over a long distance because the optical transmission loss is small and the mode dispersion is small. Further, when the core diameter is larger than 10 μm, the mode is changed from the single mode to the multimode, so that there is a possibility that it is not possible to obtain the single mode merit that the optical transmission loss and the mode dispersion are small. On the other hand, since the multimode optical fiber has a large core diameter, positioning with a member such as a light source or an optical circulator is easy, and there is an advantage that a component for a semiconductor manufacturing apparatus can be manufactured at low cost.

  When the relative refractive index difference Δn representing the difference between the refractive index n1 of the core and the refractive index n2 of the cladding is Δn = (n1−n2) / n1, the relative refractive index difference Δn is 0.3 in the single mode optical fiber. % (Δn = 0.003). If the relative refractive index difference Δn is extremely smaller than 0.3%, the total reflection condition between the core and the cladding cannot be satisfied, and light cannot propagate. On the other hand, when the relative refractive index difference Δn is larger than 0.5%, the mode changes from the single mode to the multi mode, and as a result, the merit of the single mode cannot be obtained. In the multimode optical fiber, the relative refractive index difference Δn is higher than 0.8 and less than 2.5% (0.008 to 0.025). If the relative refractive index difference Δn is 0.8% or less, the optical loss when the optical fiber is bent becomes large, so that it cannot be bent with a large curvature (20 mm or less in curvature radius). In addition, it is difficult to actually manufacture an optical fiber having a relative refractive index difference of Δn 2.5% or more. In general, the refractive index is increased by changing the composition of quartz to make the core portion, but this is because it exceeds the changeable range. A more preferable range of the relative refractive index difference of the optical fiber 600 is higher than 1.5% and lower than 2%. This is because the optical loss when bent is small and the fabrication is easy.

  FIG. 4 is an explanatory diagram showing verification results of bending loss and fracture probability of the two types of optical fibers 1 and 2. The breaking probability is a probability of breaking when an optical fiber having a service life of 10 years is bent at a bending radius of 5 mm. As shown in FIG. 4, the optical fiber 1 and the optical fiber 2 have the same core diameter, but the cladding diameter is smaller in the optical fiber 2 than in the optical fiber 1. If it is the optical fiber 2, it can be used conveniently, it can be bent 90 degree | times with a curvature radius of about 2 mm to 5 mm, and it can draw out from the through-hole 24 for terminals mentioned later. Further, in the optical fiber 2, since the clad diameter is as thin as 80 μm, even if it is embedded in the adhesive layer, the influence on the change in heat conduction and the flatness is extremely small.

  The inner exposed portion 620 is a portion of the optical fiber 600 that is disposed on the inner peripheral side of the embedded portion 610 so as to be exposed to the outside of the adhesive layer 300. Specifically, the inner exposed portion 620 is disposed in the through hole 32 formed in the adhesive layer 300 and the terminal through hole 24 formed in the base member 200. The upper end of the inner exposed portion 620 is connected to the inner peripheral end of the embedded portion 610, and the lower end of the inner exposed portion 620 extends from the lower opening of the terminal through hole 24 to the outside of the base member 200. . The outer exposed portion 630 is a portion of the optical fiber 600 that is disposed on the outer peripheral side of the embedded portion 610 so as to be exposed to the outside of the adhesive layer 300. Specifically, the outer exposed portion 630 is disposed on the outer peripheral side of the adhesive layer 300, and one end of the outer exposed portion 630 is connected to the outer peripheral end of the embedded portion 610.

  Further, the difference between the thermal conductivity of the optical fiber 600 and the thermal conductivity of the adhesive layer 300 is smaller than the difference between the thermal conductivity of the optical fiber 600 and the thermal conductivity of the ceramic member 100, and the heat of the optical fiber 600. It is smaller than the difference between the conductivity and the thermal conductivity of the base member 200. Specifically, when a quartz optical fiber is used for the optical fiber 600, the thermal conductivity of the optical fiber 600 is 1.4 to 1.5 W / (m · K). When alumina is used for the ceramic member 100, the thermal conductivity of the ceramic member 100 is about 32 W / (m · K). When aluminum is used for the base member 200, the thermal conductivity of the base member 200 is about 240 W / (m · K). When silicone resin, acrylic resin, or epoxy resin is used for the adhesive layer 300, the thermal conductivity of the adhesive layer 300 is 0.2 to 1.0 W / (m · K).

  An example of a method for manufacturing the electrostatic chuck 10 in which the optical fiber 600 is disposed on the adhesive layer 300 includes the following method. That is, when the ceramic member 100 and the base member 200 are joined, first, an adhesive sheet having adhesiveness (hereinafter referred to as a lower adhesive sheet) is pasted on the upper surface S3 of the base member 200, and the upper adhesive sheet is The embedded portion 610 of the optical fiber 600 is disposed and pressed. Next, an adhesive sheet (hereinafter referred to as an upper adhesive sheet) formed of the same material as the lower adhesive sheet is bonded to the lower adhesive sheet so as to cover the optical fiber 600. Next, the lower surface S2 of the ceramic member 100 is affixed on the upper adhesive sheet. Thereby, the electrostatic chuck 10 incorporating the optical fiber 600 for temperature distribution measurement can be manufactured. An adhesive sheet may be used instead of the adhesive sheet.

A-3. Configurations of temperature distribution measuring units 710 and 720 and heater control unit 800:
As shown in FIG. 2, the first temperature distribution measuring unit 710 includes one end of the optical fiber 600 exposed from the terminal through hole 24 of the base member 200 (the lower end of the inner exposed portion 620, hereinafter referred to as the first end 601). ), And the temperature distribution in the embedded portion 610 of the optical fiber 600 (along the embedded portion 610 of the ceramic member 100) based on the reflected pulsed light L2 sequentially output from the first end 601. Temperature distribution in the region).

  Specifically, the first temperature distribution measurement unit 710 includes a light source 712, an optical circulator 714, a light detection unit 716, and a signal processing unit 718. The light source 712 is a laser light source that emits laser light, for example. The optical circulator 714 projects the pulsed light L <b> 1 (laser pulse) emitted from the light source 712 to the first end 601 of the optical fiber 600. In addition, it is preferable that the wavelength of the pulsed light L1 is 700 nm or more and 1700 nm or less, for example. More preferably, when a quartz optical fiber is used for the optical fiber 600, the wavelength of the pulsed light L1 is preferably in the range of 1200 nm to 1350 nm and in the range of 1500 nm to 1600 nm. This is because light transmission loss is small and it can be used over a long distance. When a plastic optical fiber is used for the optical fiber 600 or a polymer optical waveguide is used instead of the optical fiber 600, the wavelength of the pulsed light L1 may be in the range of 825 nm to 1100 nm. preferable. This is because light transmission loss is small and it can be used over a long distance. Further, a surface emitting laser that can be produced at low cost can be used for the light source 712. The optical circulator 714 receives reflected pulsed light L2 (pulses of reflected light) sequentially output from the first end 601 of the optical fiber 600 and guides it to the light detecting unit 716. The light detection unit 716 includes, for example, a wavelength separation filter, and the reflected pulsed light L2 received from the optical circulator 714 by the wavelength separation filter is converted into light including a Stokes light component of Raman scattered light (hereinafter simply referred to as Stokes light). L21) and light including an anti-Stokes light component of Raman scattered light (hereinafter simply referred to as anti-Stokes light L22). The light source 712, the optical circulator 714, and the light detection unit 716 correspond to the light projecting unit and the light receiving unit in the claims.

  The signal processing unit 718 photoelectrically converts the Stokes light L21 and the anti-Stokes light L22 separated by the light detection unit 716, thereby obtaining an electrical signal corresponding to the light intensity of each of the Stokes light L21 and the anti-Stokes light L22. take in. The signal processing unit 718 measures the temperature distribution in a predetermined region parallel to the surface direction of the adhesive layer 300 based on the signal intensity of the captured electric signal, and outputs the measurement result to the heater control unit 800. The temperature distribution measuring method (processing content) by the signal processing unit 718 will be described below. The signal processing unit 718 corresponds to the measurement unit in the claims.

  As shown in FIG. 3, the second temperature distribution measurement unit 720 includes the other end of the optical fiber 600 exposed from the outer peripheral surface of the adhesive layer 300 (the outer end of the outer exposed portion 630, hereinafter referred to as the second end 602). ) And the temperature distribution in the embedded portion 610 of the optical fiber 600 is measured based on the reflected pulsed light L2 sequentially output from the second end 602. Since the internal configuration of the second temperature distribution measurement unit 720 is the same as that of the first temperature distribution measurement unit 710, detailed description thereof is omitted.

  The heater control unit 800 individually adjusts the heat generation amounts of the plurality of heaters based on the temperature distribution measurement results by the first temperature distribution measurement unit 710 and the second temperature distribution measurement unit 720, for example, ceramics. The temperature distribution in the surface direction of the suction surface S1 (wafer W) of the member 100 is controlled to be substantially uniform.

A-4. Measuring method of temperature distribution:
When the pulsed light L1 enters from one end of the optical fiber 600, scattered light is generated at each position in the optical path as the pulsed light L1 travels in the optical path of the optical fiber 600, and a part of the scattered light is backscattered. The light returns to one end side of the optical fiber 600 into which the pulsed light L1 is incident. Backscattered light from each position in the optical path is sequentially output from each end 601 and 602 of the optical fiber 600 as the above-described reflected pulsed light L2. The reflected pulse light L2 (backscattered light) includes Rayleigh scattered light, Brillouin scattered light, and Raman scattered light. Since Raman scattered light has higher temperature sensitivity than Rayleigh scattered light and Brillouin scattered light, it can be used for temperature measurement. That is, the Raman scattered light includes Stokes light L21 and anti-Stokes light L22 having different wavelengths, and the light intensity ratio between Stokes light L21 and anti-Stokes light L22 is determined at each position where Raman scattering occurs. Depends on temperature.

  FIG. 5 is an explanatory diagram showing the relationship between the temperature distribution along the optical path of the optical fiber 600 and the change in the light intensity of the Stokes light L21 and the anti-Stokes light L22 sequentially detected by the temperature distribution measuring units 710 and 720. It is. FIG. 5A shows the relationship between each position in the optical path of the optical fiber 600 and the temperature. The “distance” on the horizontal axis in the figure means the optical path length from each end 601 and 602 of the optical fiber 600 to each position. For example, the position corresponding to the distance P1 in the figure means that the position corresponding to the distance P1 is closer to the ends 601 and 602 of the optical fiber 600 on which the pulsed light L1 is projected than the position corresponding to the distance P2. “Temperature” on the vertical axis in the figure means the temperature at each position in the optical path. That is, the graph of FIG. 5A shows a continuous temperature distribution along the optical path of the optical fiber 600.

  FIG. 5B shows a change with time of the light intensity ratio between the Stokes light L21 and the anti-Stokes light L22 in the reflected pulsed light L2. The “time” on the horizontal axis in the figure means the elapsed time from the light projection timing at which the temperature distribution measuring units 710 and 720 project the pulsed light L1 to the ends 601 and 602 of the optical fiber 600, for example. The “signal intensity” on the vertical axis means the light intensity of the Stokes light L21 and the anti-Stokes light L22 in the reflected pulse light L2 received by the temperature distribution measuring units 710 and 720 at each elapsed time. As described above, in each temperature distribution measurement unit 710, 720, the reflected pulse light L2 (backscattered light) generated at each position in the optical path of the optical fiber 600 corresponds to the optical path length (distance) to the position. The light is sequentially received in time series, and the Stokes light L21 and the anti-Stokes light L22 included in the reflected pulse light L2 are detected. Therefore, based on the elapsed time from the light projection timing to a certain observation timing, the generation position in the optical path of the optical fiber 600 can be specified for the reflected pulsed light L2 received at the observation timing. For example, the reflected pulse light L2 received at the elapsed time T1 is the reflected pulse light L2 generated at a position corresponding to the distance P1, and the reflected pulse light L2 received at the elapsed time T2 is a position corresponding to the distance P2. It is possible to specify that the reflected pulsed light L2 generated in step 1 is. Further, as described above, the temperature at the generation position of the reflected pulsed light L2 can be specified based on the light intensity ratio between the Stokes light L21 and the anti-Stokes light L22 included in the received reflected pulsed light L2. As described above, the temperature distribution measuring units 710 and 720 sequentially specify the light intensity ratio between the Stokes light L21 and the anti-Stokes light L22 included in the reflected pulsed light L2 in time series, thereby burying the embedded portion of the optical fiber 600. A continuous temperature distribution in the region along 610 can be measured.

  In addition, since the light intensity of Stokes light L21 and anti-Stokes light L22 is comparatively weak, each temperature distribution measurement part 710,720 repeatedly measures the continuous temperature distribution in the optical fiber 600, and performs multiple times. It is preferable to average the measurement results. Thereby, the measurement accuracy of the temperature distribution in the embedded portion 610 of the optical fiber 600 is improved. Note that the temperature distribution measurement result here is, for example, information indicating the correspondence between each position of the embedded portion 610 and the relative temperature or absolute temperature with respect to the reference temperature at each position.

  In the present embodiment, the temperature distribution measurement by the first temperature distribution measurement unit 710 and the temperature distribution measurement by the second temperature distribution measurement unit 720 are alternately performed in a time division manner. Then, based on the measurement result of the temperature distribution by the first temperature distribution measurement unit 710 and the measurement result of the temperature distribution by the second temperature distribution measurement unit 720, the temperature distribution in the embedded portion 610 of the optical fiber 600 is measured (acquired). ) For example, for the position near the first end 601 in the optical fiber 600, use the measurement result of the first temperature distribution measurement unit 710 and the measurement result of the temperature distribution by the second temperature distribution measurement unit 720. First, for the position near the second end 602 in the optical fiber 600, the measurement result of the first temperature distribution measurement unit 710 is not used, but the measurement result of the first temperature distribution measurement unit 710 is not used. It is good also as. Thus, by projecting the pulsed light L1 to each of both ends of one optical fiber 600 and measuring the temperature distribution, the reflected pulsed light L2 generated at positions far from the temperature distribution measuring units 710 and 720 is measured. It can suppress that the measurement accuracy of temperature distribution falls by attenuation. For the position near the center of the optical fiber 600, the temperature distribution is measured by averaging the measurement result of the first temperature distribution measurement unit 710 and the measurement result of the temperature distribution by the second temperature distribution measurement unit 720. May be.

A-5. Effects of the first embodiment:
As described above, the electrostatic chuck 10 according to the present embodiment includes the optical fiber 600 having the embedded portion 610 that is disposed on the adhesive layer 300 and extends in the surface direction. Light intensity of Stokes light L21 and anti-Stokes light L22 in Raman scattered light sequentially output from the ends 601 and 602 by projecting pulsed light L1 onto the ends 601 and 602 of the optical fiber 600 exposed from the adhesive layer 300 Based on the ratio, the continuous temperature distribution in the region along the embedded portion 610 of the ceramic member 100 can be measured. Moreover, by continuously measuring the temperature distribution by the temperature distribution measuring units 710 and 720, for example, the temperature distribution of the ceramic member 100 whose temperature can be changed at any time in a plasma environment is measured in a timely manner. It can be reflected in temperature control.

  Here, if a thermocouple, a resistance temperature detector, or the like is used for measuring the temperature distribution, a conductor (wiring, etc.) for supplying power to the thermocouple or the like needs to be disposed in the electrostatic chuck 10. The conductor may adversely affect the plasma environment. In addition, thermocouples and the like may have low temperature detection accuracy due to the influence of electromagnetic induction. On the other hand, in the electrostatic chuck 10 of this embodiment, since the optical fiber 600 is used for measuring the temperature distribution, it is not necessary to arrange a conductor for supplying power. The optical fiber 600 itself is also an insulator. For this reason, it does not have a bad influence in a plasma environment, and it can suppress that the detection accuracy of temperature falls by the influence of electromagnetic induction. Further, in the electrostatic chuck 10 of the present embodiment, unlike the case where thermography (infrared radiation method) is used, the temperature distribution in the ceramic member 100 in a state where the wafer W is disposed on the suction surface S1 of the ceramic member 100. Can be measured.

  Further, when a gap exists between the buried portion 610 of the optical fiber 600 and the members around the buried portion 610, the temperature distribution measurement by the optical fiber 600 is caused by the low thermal conductivity air existing in the gap. The accuracy may be reduced. On the other hand, in the electrostatic chuck 10 of the present embodiment, the embedded portion 610 is arranged in the adhesive layer 300, not the ceramic member 100 or the base member 200. Since the adhesive layer 300 is formed of a material that is relatively softer than the ceramic member 100 and the base member 200, the adhesive layer 300 is formed around the embedded portion 610 as compared with the configuration in which the embedded portion 610 is embedded in the ceramic member 100 and the base member 200. It can suppress that a clearance gap arises. Even when the adhesive layer 300 is formed of a metal such as indium, it is possible to prevent a gap from being generated around the embedded portion 610. Specifically, for example, the melting point of indium is 157 ° C., whereas the softening point of quartz, which is a material for forming the optical fiber 600, is about 1700 ° C. For this reason, for example, when the ceramic member 100 and the base member 200 are bonded, the adhesive layer 300 is softened at a temperature equal to or higher than the melting point of indium, thereby preventing a gap from being generated around the embedded portion 610. At this time, the temperature sensitivity of the optical fiber 600 is hardly affected.

  Further, in the electrostatic chuck 10 of the present embodiment, the embedded portion 610 of the optical fiber 600 is disposed at a position closer to the ceramic member 100 than the base member 200 over the entire length. As a result, the temperature distribution in the ceramic member 100 can be measured more accurately as compared with a configuration in which the inner exposed portion 620 is positioned in the middle between the ceramic member 100 and the base member 200 or disposed closer to the base member 200 side. can do. In the present embodiment, the embedded portion 610 is disposed so as to be in contact with the lower surface S2 of the electrostatic chuck 10 over the entire length. Thereby, it can suppress that the measurement precision of the temperature distribution of the ceramic member 100 falls by the member interposed between the embedding part 610 and the ceramic member 100. FIG. Further, since the distance between the embedded portion 610 and the ceramic member 100 is uniform over the entire length of the embedded portion 610, the temperature of the ceramic member 100 is caused by the variation in the distance between the embedded portion 610 and the ceramic member 100. It can suppress that the measurement accuracy of distribution falls.

  Moreover, in the electrostatic chuck 10 of this embodiment, the shape of the cross section substantially orthogonal to the axial direction of the optical fiber 600 is substantially circular. Thereby, for example, since the transmission loss of light in the optical transmission medium is small compared to the configuration in which the cross-sectional shape substantially orthogonal to the axial direction of the optical transmission medium is rectangular, the ceramic member 100 is caused by the transmission loss of light. It can suppress that the measurement precision of the temperature distribution in falls. When the cross-sectional shape of the optical fiber 600 is substantially rectangular, the total reflection condition changes at the corners and sides of the rectangle, whereas when it is substantially circular, there are no corners and sides. Therefore, since the total reflection condition does not change in the transmission path, there is little light transmission loss.

  Further, in the electrostatic chuck 10 of the present embodiment, the difference between the thermal conductivity of the optical fiber 600 and the thermal conductivity of the adhesive layer 300 is the difference between the thermal conductivity of the optical fiber 600 and the thermal conductivity of the ceramic member 100. It is smaller and smaller than the difference between the thermal conductivity of the optical fiber 600 and the thermal conductivity of the base member 200. With such a configuration, for example, the difference between the thermal conductivity of the optical fiber 600 and the thermal conductivity of the adhesive layer 300 is the difference between the thermal conductivity of the optical fiber 600 and the thermal conductivity of the ceramic member 100, and The thermal conductivity in the adhesive layer 300 varies due to the presence of the optical fiber 600 as compared to a configuration in which the difference between the thermal conductivity of the optical fiber 600 and the thermal conductivity of the base member 200 is greater than one. As a result, variation in the endothermic effect from the ceramic member 100 to the base member 200 can be suppressed.

  In the electrostatic chuck 10 of the present embodiment, the second end 602 of the inner exposed portion 620 of the optical fiber 600 is connected to the adhesive layer 300 (electrostatic chuck) via the terminal through-hole 24 formed in the base member 200. 10) Exposed outside. Thus, in order to expose the second end 602 of the optical fiber 600 to the outside, a dedicated hole is separately formed by using a hole (terminal through hole 24) used for other purposes. This can suppress the generation of new temperature singularities.

B. Second embodiment:
6 to 8 show an electrostatic chuck 10A of the second embodiment. Among the configurations of the electrostatic chuck 10A of the second embodiment, the same configurations (processes) as those of the electrostatic chuck 10 of the first embodiment described above are denoted by the same reference numerals, and description thereof is omitted.

B-1. Configuration of electrostatic chuck 10A:
FIG. 6 is a perspective view schematically showing an external configuration of the electrostatic chuck 10A in the second embodiment, and FIG. 7 shows XZ cross-sectional configurations of the electrostatic chuck system 1A and the electrostatic chuck 10A in the second embodiment. FIG. 8 is an explanatory view schematically showing, and FIG. 8 is an explanatory view schematically showing an XY cross-sectional configuration of the electrostatic chuck 10A in the second embodiment. 7 shows an XZ sectional configuration of the electrostatic chuck 10A at the position VI-VI in FIG. 6, and FIG. 8 shows an XY sectional configuration of the electrostatic chuck 10A at the position VII-VII in FIG. It is shown. The electrostatic chuck system 1A includes an electrostatic chuck 10A, temperature distribution measurement units 710 and 720, and a heater control unit 800.

  The electrostatic chuck 10A is formed with a plurality of (three in this embodiment) pin insertion holes 120 extending in the vertical direction from the base member 200A to the suction surface S1 of the ceramic member 100A. The pin insertion hole 120 is a hole for movably inserting a lift pin (not shown) for pushing up the wafer W arranged on the ceramic member 100A and separating it from the adsorption surface S1 of the ceramic member 100A. Specifically, the pin insertion hole 120 includes a base side hole 220A formed in the base member 200A and a ceramic side hole 140 formed in the ceramic member 100A. The base side hole 220A penetrates in the vertical direction from the upper surface S3 to the lower surface S4 of the base member 200A. The ceramic side holes 140 penetrate vertically from the adsorption surface S1 to the lower surface S2 of the ceramic member 100A. The base side hole 220A and the ceramic side hole 140 communicate with each other. Note that the three pin insertion holes 120 are arranged at substantially equal intervals in the circumferential direction on a circle centered on the central axis O of the ceramic member 100A when viewed in the vertical direction.

B-2. Configuration of optical transmission medium 600A:
As shown in FIGS. 7 and 8, the electrostatic chuck 10A further includes an optical transmission medium 600A. The optical transmission medium 600A includes a first optical transmission medium 620A and a second optical transmission medium 640A. The first optical transmission medium 620A is an optical waveguide. The optical waveguide is a linear member whose main component is a polymer material such as silicone resin or acrylic resin. In addition, the shape (outer shape) of the cross section substantially orthogonal to the axial direction of the first optical transmission medium 620A is substantially rectangular. The first optical transmission medium 620A includes an embedded portion 622A and an exposed portion 624A. The embedded portion 622A is embedded in the adhesive layer 300A and is disposed on the same virtual plane (XY plane) substantially parallel to the adsorption surface S1 of the ceramic member 100A. Further, the embedded portion 622A is spirally disposed in the region on the center portion side of the adhesive layer 300A when viewed in the vertical direction. The exposed portion 624A is disposed in a base side hole 220A formed in the base member 200A. The upper end of the exposed portion 624A is connected to the outer peripheral end of the embedded portion 622A, and the lower end of the exposed portion 624A extends from the lower opening of the base side hole 220A to the outside of the base member 200A. The base side hole 220A corresponds to a through hole in the claims, and the embedded portion 622A corresponds to a parallel portion in the claims.

  The second optical transmission medium 640A is an optical fiber similar to the optical fiber 600 of the first embodiment. The second optical transmission medium 640A includes an embedded portion 642A and an exposed portion 644A. The embedded portion 642A is embedded in the adhesive layer 300A and is disposed on the same virtual plane (XY plane) substantially parallel to the adsorption surface S1 of the ceramic member 100A. Further, the embedded portion 642A is arranged in a spiral shape in a region on the peripheral side of the adhesive layer 300A when viewed in the vertical direction. The exposed portion 644A is disposed in a base side hole 220A formed in the base member 200A. The upper end of the exposed portion 644A is connected to the inner peripheral end of the embedded portion 642A, and the lower end of the exposed portion 644A extends from the lower opening of the base side hole 220A to the outside of the base member 200A. The embedded portion 642A corresponds to a parallel portion in the claims.

  Further, the total length of the first optical transmission medium 620A is shorter than the total length of the second optical transmission medium 640A. Further, the maximum curvature (1 / r) of the embedded portion 642A of the second optical transmission medium 640A in the vertical direction is smaller than the maximum curvature of the embedded portion 622A of the first optical transmission medium 620A. That is, the degree of bending of the embedded portion 642A is gentler than the degree of bending of the embedded portion 622A.

B-3. Configurations of temperature distribution measuring units 710 and 720 and heater control unit 800:
The first temperature distribution measuring unit 710 projects the pulsed light L1 to one end of the first optical transmission medium 620A exposed from the base side hole 220A of the base member 200A (the lower end of the exposed portion 624A), and sequentially from the one end. Based on the output reflected pulse light L2, a temperature distribution in the exposed portion 624A (temperature distribution in a region near the central axis O in the ceramic member 100) is measured. Further, as shown in FIG. 7, the second temperature distribution measurement unit 720 has pulsed light L1 at one end (the lower end of the exposed portion 644A) of the second optical transmission medium 640A exposed from the base side hole 220A of the base member 200A. And the temperature distribution in the embedded portion 642A (temperature distribution in the region near the periphery of the ceramic member 100) is measured based on the reflected pulsed light L2 sequentially output from the one end.

  The heater control unit 800 individually adjusts the heat generation amounts of the plurality of heaters based on the temperature distribution measurement results by the first temperature distribution measurement unit 710 and the second temperature distribution measurement unit 720, for example, ceramics. The temperature distribution in the surface direction of the suction surface S1 (wafer W) of the member 100 is controlled to be substantially uniform.

B-4. Effects of the second embodiment:
As described above, in the electrostatic chuck 10A in the present embodiment, the first optical transmission medium 620A and the second optical transmission having the embedded portions 622A and 642A that are disposed on the adhesive layer 300A and extend in the plane direction. A medium 640A (optical transmission medium 600A) is provided. By projecting the pulsed light L1 to one end of each of the optical transmission media 620A and 640A exposed from the adhesive layer 300A, the light intensity ratio between Stokes light L21 and anti-Stokes light L22 in Raman scattered light sequentially output from the one end Based on this, it is possible to measure a continuous temperature distribution in a region along the embedded portions 622A and 642A in the ceramic member 100A.

  Further, as described above, the total length of the first optical transmission medium 620A is shorter than the total length of the second optical transmission medium 640A. Here, since the first optical transmission medium 620A, which is an optical waveguide, has a larger optical transmission loss than the second optical transmission medium 640A, which is an optical fiber, the temperature at a position where the optical path length is long is accurately measured. There is a risk that it cannot be done. In contrast, as in the present embodiment, if the total length of the optical waveguide is shorter than the total length of the optical fiber, the total length of the optical waveguide is longer than the total length of the optical fiber. It can suppress that the measurement precision of the temperature distribution in the ceramic member 100A falls due to transmission loss. The maximum curvature of the embedded portion 642A of the second optical transmission medium 640A is smaller than the maximum curvature of the embedded portion 622A of the first optical transmission medium 620A. Here, the second optical transmission medium 640A, which is an optical fiber, has a larger light transmission loss due to bending than the first optical transmission medium 620A, which is an optical waveguide. On the other hand, as in this embodiment, if the maximum curvature of the optical fiber is smaller than the maximum curvature of the optical waveguide, the optical fiber has a maximum curvature larger than the maximum curvature of the optical waveguide. It can be suppressed that the measurement accuracy of the temperature distribution in the ceramic member 100A is lowered due to the light transmission loss due to the bending of the fiber.

  In the electrostatic chuck 10A of the present embodiment, the shape of the cross section substantially orthogonal to the axial direction of the first optical transmission medium 620A (optical waveguide) is substantially rectangular. As a result, a gap is less likely to occur between the optical transmission medium 600A and the adhesive layer 300A compared to a configuration in which the shape of the cross section substantially orthogonal to the axial direction of the optical transmission medium 600A is circular. It can suppress that the measurement precision of the temperature distribution in 100 A of ceramic members resulting from the clearance gap between the layers 300A falls.

  In the electrostatic chuck 10A of the present embodiment, the difference between the thermal conductivity of the optical transmission medium 600A and the thermal conductivity of the adhesive layer 300A is the difference between the thermal conductivity of the optical transmission medium 600A and the thermal conductivity of the ceramic member 100A. And smaller than the difference between the thermal conductivity of the optical transmission medium 600A and the thermal conductivity of the base member 200A. With such a configuration, variation in the thermal conductivity in the adhesive layer 300A due to the presence of the optical transmission medium 600A can be suppressed, and as a result, the endothermic effect from the ceramic member 100A to the base member 200A varies. It is possible to suppress the occurrence. It is more preferable to form the optical transmission medium 600A (for example, an optical waveguide) and the adhesive layer 300A from the same material.

  In the electrostatic chuck 10A of the present embodiment, one end of each of the optical transmission media 620A and 640A is exposed to the outside of the adhesive layer 300A (electrostatic chuck 10A) through a base side hole 220A formed in the base member 200A. is doing. As described above, in order to expose one end of each of the optical transmission media 620A and 640A to the outside, the hole (base side hole 220A) used for other purposes is used, thereby forming a dedicated hole separately. Thus, generation of a new temperature singularity can be suppressed.

C. Variations:
The technology disclosed in the present specification is not limited to the above-described embodiment, and can be modified into various forms without departing from the gist thereof. For example, the following modifications are possible.

  The configuration of the electrostatic chuck 10 in each of the above embodiments is merely an example, and can be variously modified. For example, in each of the above embodiments, the circular planar ceramic members 100 and 100A are exemplified as the first member. However, the first member may be a member having a shape different from the ceramic member 100 or the like, or the chuck electrode 400 and the heater electrode. The configuration may be such that at least one of 500 is not provided. Moreover, in each said embodiment, the adsorption | suction surface S1 of the ceramic members 100 and 100A should just be substantially planar shape, for example, it is good also as a gentle curved surface.

  Moreover, in each said embodiment, although the base members 200 and 200A formed with the metal were illustrated as a 2nd member, it is good also as a member formed with materials other than a metal, such as ceramics, for example. Further, the diameter of the second member (for example, the base member 200) may be larger or smaller than the diameter of the first member (for example, the ceramic member 100).

  In the above embodiments, the adhesive layers 300 and 300A are not limited to resin adhesives, and may be formed of a metal such as indium. Further, the optical fiber 600 and the second optical transmission medium 640A may be formed of a material other than quartz.

  In the first embodiment, an optical waveguide may be arranged in the adhesive layer 300 instead of the optical fiber 600. In general, the thermal conductivity of the optical waveguide is closer to the thermal conductivity of the adhesive layer 300 than the thermal conductivity of the optical fiber. Further, the optical fiber is made of quartz, whereas the adhesive layer and the optical waveguide are usually made of a polymer material. Therefore, if it is the structure using an optical waveguide, it can suppress that the measurement precision of the temperature distribution in the ceramic member 100 resulting from the difference in the thermal conductivity of an optical transmission medium and the contact bonding layer 300 falls. In such a configuration, even when the adhesive layer 300 is formed of a metal such as indium, it is possible to suppress a gap from being generated around the optical waveguide. For example, when the ceramic member 100 and the base member 200 are joined, the adhesive layer 300 is softened at a temperature equal to or higher than the melting point of indium, whereby generation of a gap around the optical waveguide can be suppressed. At this time, if the optical waveguide is formed of, for example, epoxy resin or silicone resin, the optical waveguide hardly affects the temperature sensitivity of the optical waveguide even if it is exposed for a relatively short time during bonding. Absent.

  In the first embodiment, the inner exposed portion 620 of the optical fiber 600 may be exposed to the outside through a terminal through hole in which an electrode terminal for supplying power to the chuck electrode 400 is disposed. In this case, the terminal through hole corresponds to the through hole in the claims. In the first embodiment, both ends of the optical fiber 600 may be exposed from the outer peripheral surface of the adhesive layer 300. For example, in the form shown in FIG. 3, instead of the inner exposed portion 620 of the optical fiber 600, the spiral inner portion of the optical fiber 600 may be extended to the outer peripheral surface of the adhesive layer 300 while being bent toward the base member 200 side. Further, the shape of the embedded portion 610 of the optical fiber 600 as viewed in the vertical direction is not limited to a spiral shape, and may be, for example, an arc shape or a linear shape. Further, the embedded portion 610 may be disposed at the middle position between the base member 200 and the ceramic member 100 over the entire length, or may be disposed at a position close to the base member 200. Furthermore, the embedded portion 610 may be in contact with the upper surface S3 of the base member 200. In the first embodiment, the temperature distribution may be measured by projecting the pulsed light L1 to only one of both ends of the optical fiber 600. In the first embodiment, the difference between the thermal conductivity of the optical fiber 600 and the thermal conductivity of the adhesive layer 300 is the difference between the thermal conductivity of the optical fiber 600 and the thermal conductivity of the ceramic member 100, and The configuration may be greater than at least one of the differences between the thermal conductivity of the optical fiber 600 and the thermal conductivity of the base member 200.

  In the above-described embodiment, the light source 712, the optical circulator 714, and the light detection unit 716 are exemplified as the light projecting unit and the light receiving unit. However, the light projecting unit projects pulse light to one end of the optical transmission medium, and receives the light receiving unit. Any device may be used as long as it receives the Raman scattered light output from the one end where the pulsed light in the optical transmission medium is projected. Therefore, as in the above-described embodiment, the light projecting axis of the light projecting unit and the light receiving axis of the light receiving unit are not limited to be arranged on the same axis. It is good also as a structure which is not arrange | positioned on the same axis | shaft.

  Further, in each of the above embodiments, a monopolar system in which one chuck electrode 400 is provided inside the ceramic member 100 is adopted, but a bipolar system in which a pair of chuck electrodes 400 is provided inside the ceramic member 100. May be adopted. Moreover, the material which forms each member in the electrostatic chuck 10 of each said embodiment is an illustration to the last, and each member may be formed with another material.

  In each of the above embodiments, the electrostatic chuck 10 includes the heater electrode 500, but the electrostatic chuck 10 may not include the heater electrode 500. Further, in each of the above embodiments, the refrigerant flow path 210 is formed inside the base member 200. However, the refrigerant flow path 210 is not inside the base member 200 but on the surface of the base member 200 (for example, the base member 200). And the adhesive layer 300). The present invention is not limited to the electrostatic chuck 10 that holds the wafer W using electrostatic attraction, but can be applied to a heater device or a shower head that does not include a vacuum chuck or a base member. In short, the present invention can be applied to a semiconductor manufacturing apparatus component including a first member formed of ceramics, a second member, and a joint.

  In each of the above embodiments, the electrostatic chuck systems 1 and 1A may be configured not to include one of the first temperature distribution measurement unit 710 and the second temperature distribution measurement unit 720. Further, the electrostatic chuck systems 1 and 1A may be configured not to include the heater control unit 800 and to output the measurement result of the temperature distribution of the ceramic member 100 to an external device (not shown).

  Moreover, the manufacturing method of the electrostatic chuck 10 in the above embodiments is merely an example, and various modifications can be made.

DESCRIPTION OF SYMBOLS 1,1A: Electrostatic chuck system 10, 10A: Electrostatic chuck 16: Concave 24: Through hole for terminal 32: Through hole 51: Via 52: Electrode pad 54: Electrode terminal 80: Insulating member 100, 100A: Ceramic member 120 : Pin insertion hole 140: Ceramic side hole 200, 200A: Base member 210: Refrigerant flow path 220A: Base side hole 300, 300A: Adhesive layer 400: Chuck electrode 500: Heater electrode 600: Optical fiber 600A: Optical transmission medium 601: First end 602: second end 610, 622A, 642A: embedded portion 620: inner exposed portion 620A: first optical transmission medium 624A, 644A: exposed portion 630: outer exposed portion 640A: second optical transmission medium 710: First temperature distribution measurement unit 712: Light source 714: Circulator 716: Light detection unit 718: Signal processing unit 720: Second temperature distribution measurement unit 800: Heater control unit L1: Pulsed light L21: Stokes light L22: Anti-Stokes light L2: Reflected pulsed light O: Center axis P1: Distance P2: Distance S1: Suction surface S2: Lower surface S3: Upper surface S4: Lower surface T1: Elapsed time T2: Elapsed time W: Wafer

Claims (8)

A first member having a substantially planar first surface substantially perpendicular to the first direction and a substantially planar second surface opposite to the first surface and made of ceramics When,
A second member having a substantially planar third surface disposed to face the second surface of the first member;
In a component for a semiconductor manufacturing apparatus, comprising: a joining portion that is disposed between the second surface and the third surface and joins the first member and the second member;
A linear optical transmission medium having a parallel portion disposed in the joint and extending in a plane direction substantially parallel to the first surface, wherein at least one end side is exposed to the outside of the joint. with the optical transmission medium it is,
The difference between the thermal conductivity of the optical transmission medium and the thermal conductivity of the joint is smaller than the difference between the thermal conductivity of the optical transmission medium and the thermal conductivity of the first member, and the optical transmission Smaller than the difference between the thermal conductivity of the medium and the thermal conductivity of the second member,
A component for semiconductor manufacturing equipment.   A first member having a substantially planar first surface substantially perpendicular to the first direction and a substantially planar second surface opposite to the first surface and made of ceramics When,
  A second member having a substantially planar third surface disposed to face the second surface of the first member;
  In a component for a semiconductor manufacturing apparatus, comprising: a joining portion that is disposed between the second surface and the third surface and joins the first member and the second member;
  A linear optical transmission medium having a parallel portion disposed in the joint and extending in a plane direction substantially parallel to the first surface, wherein at least one end side is exposed to the outside of the joint. Comprising the optical transmission medium
  The second member is formed with a through hole that opens to the third surface and penetrates the second member.
  The at least one end side of the optical transmission medium is exposed to the outside of the joint through the through hole.
  A component for semiconductor manufacturing equipment. A first member having a substantially planar first surface substantially perpendicular to the first direction and a substantially planar second surface opposite to the first surface and made of ceramics When,
A second member having a substantially planar third surface disposed to face the second surface of the first member;
In a component for a semiconductor manufacturing apparatus, comprising: a joining portion that is disposed between the second surface and the third surface and joins the first member and the second member;
A linear optical transmission medium having a parallel portion disposed in the joint and extending in a plane direction substantially parallel to the first surface, wherein at least one end side is exposed to the outside of the joint. Comprising the optical transmission medium
The optical transmission medium includes an optical fiber and an optical waveguide,
The total length of the optical waveguide is shorter than the total length of the optical fiber, and the maximum curvature of the optical fiber in the first direction view is larger than the maximum curvature of the optical waveguide in the first direction view. Satisfy at least one of being small,
A component for semiconductor manufacturing equipment. In the component for a semiconductor manufacturing apparatus according to any one of claims 1 to 3 ,
The semiconductor manufacturing apparatus component is a holding device that holds an object on the first surface of the first member,
The parallel portion of the optical transmission medium is disposed at a position closer to the first member than the second member in the first direction.
A component for semiconductor manufacturing equipment. In the component for a semiconductor manufacturing apparatus according to any one of claims 1 to 4 ,
The shape of the cross section substantially orthogonal to the axial direction of the optical transmission medium is substantially rectangular.
A component for semiconductor manufacturing equipment. In the component for a semiconductor manufacturing apparatus according to any one of claims 1 to 4 ,
The shape of the cross section substantially perpendicular to the axial direction of the optical transmission medium is substantially circular.
A component for semiconductor manufacturing equipment. A first member having a substantially planar first surface substantially perpendicular to the first direction and a substantially planar second surface opposite to the first surface and made of ceramics When,
A second member having a substantially planar third surface disposed to face the second surface of the first member;
In a method for measuring a temperature distribution of a component for a semiconductor manufacturing apparatus, comprising: a joining portion that is disposed between the second surface and the third surface and joins the first member and the second member. ,
The optical transmission medium according to any one of claims 1 to 6 is disposed in the joint portion,
Projecting pulsed light onto the at least one end of the optical transmission medium, and receiving Raman scattered light sequentially output from the at least one end where the pulsed light is projected;
Measuring a temperature distribution of the first member based on a light intensity ratio between Stokes light and anti-Stokes light in the Raman scattered light sequentially output;
including,
A method for measuring a temperature distribution of a component for a semiconductor manufacturing apparatus. A first member having a substantially planar first surface substantially perpendicular to the first direction and a substantially planar second surface opposite to the first surface and made of ceramics When,
A second member having a substantially planar third surface disposed to face the second surface of the first member;
A joint portion disposed between the second surface and the third surface, and joining the first member and the second member;
The optical transmission medium according to any one of claims 1 to 6 ,
A light projecting unit that projects pulsed light onto the at least one end of the optical transmission medium;
A light receiving unit that receives Raman scattered light that is sequentially output from the at least one end where the pulsed light in the optical transmission medium is projected;
A measurement unit for measuring a temperature distribution of the first member based on a light intensity ratio between Stokes light and anti-Stokes light in the Raman scattered light sequentially received by the light receiving unit;
Comprising
An apparatus for measuring temperature distribution of parts for semiconductor manufacturing equipment.

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