SG10201810902WA - Dual auxiliary dopant inlets on epi chamber - Google Patents

Dual auxiliary dopant inlets on epi chamber

Info

Publication number
SG10201810902WA
SG10201810902WA SG10201810902WA SG10201810902WA SG10201810902WA SG 10201810902W A SG10201810902W A SG 10201810902WA SG 10201810902W A SG10201810902W A SG 10201810902WA SG 10201810902W A SG10201810902W A SG 10201810902WA SG 10201810902W A SG10201810902W A SG 10201810902WA
Authority
SG
Singapore
Prior art keywords
dopant
auxiliary
chamber
inlet
dual
Prior art date
Application number
SG10201810902WA
Inventor
Jin Zheng
Youqun Dong
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10201810902WA publication Critical patent/SG10201810902WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/2496—Self-proportioning or correlating systems
    • Y10T137/2499—Mixture condition maintaining or sensing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

DUAL AUXILIARY DOPANT INLETS ON EPI CHAMBER The present invention provides methods and apparatus for processing semiconductor substrates with dual or multiple dopant inlets formed at different locations of an epitaxial chamber configured to supply dopant gases toward different locations of the substrate during deposition. In one embodiment, a gas delivery system configured to couple to an epitaxial deposition chamber includes a gas conduit has a first end and a second end configured to dispose in an epitaxial deposition chamber, the first end coupled to a gas panel and a second end branched out to include an auxiliary inner dopant inlet and an auxiliary outer dopant inlet, wherein the auxiliary inner dopant inlet and the auxiliary outer dopant inlet are independently controlled when implementing in the epitaxial deposition chamber. Fig. 5
SG10201810902WA 2014-06-13 2015-05-22 Dual auxiliary dopant inlets on epi chamber SG10201810902WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201462012067P 2014-06-13 2014-06-13

Publications (1)

Publication Number Publication Date
SG10201810902WA true SG10201810902WA (en) 2019-01-30

Family

ID=54834101

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201810902WA SG10201810902WA (en) 2014-06-13 2015-05-22 Dual auxiliary dopant inlets on epi chamber
SG11201609741XA SG11201609741XA (en) 2014-06-13 2015-05-22 Dual auxiliary dopant inlets on epi chamber

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201609741XA SG11201609741XA (en) 2014-06-13 2015-05-22 Dual auxiliary dopant inlets on epi chamber

Country Status (6)

Country Link
US (1) US20150361583A1 (en)
KR (1) KR102323392B1 (en)
CN (1) CN106663607A (en)
SG (2) SG10201810902WA (en)
TW (1) TWI660066B (en)
WO (1) WO2015191268A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104962880B (en) * 2015-07-31 2017-12-01 合肥京东方光电科技有限公司 A kind of vapor deposition apparatus
CN109661715B (en) * 2016-09-05 2023-07-28 信越半导体株式会社 Vapor phase growth apparatus and epitaxial wafer manufacturing method
CN113243039B (en) * 2018-12-20 2022-06-28 应用材料公司 Method for growing doped group IV materials

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5225561A (en) * 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
JP2000138168A (en) * 1998-10-29 2000-05-16 Shin Etsu Handotai Co Ltd Semiconductor wafer and vapor growth device
US6645302B2 (en) * 2000-04-26 2003-11-11 Showa Denko Kabushiki Kaisha Vapor phase deposition system
US20030000924A1 (en) * 2001-06-29 2003-01-02 Tokyo Electron Limited Apparatus and method of gas injection sequencing
US20040050325A1 (en) * 2002-09-12 2004-03-18 Samoilov Arkadii V. Apparatus and method for delivering process gas to a substrate processing system
US7166528B2 (en) * 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
DE102004060624B4 (en) * 2004-12-16 2010-12-02 Siltronic Ag Semiconductor wafer with epitaxially deposited layer and method for producing the semiconductor wafer
WO2007117576A2 (en) * 2006-04-07 2007-10-18 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
US7674337B2 (en) * 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
US20100101728A1 (en) * 2007-03-29 2010-04-29 Tokyo Electron Limited Plasma process apparatus
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate

Also Published As

Publication number Publication date
KR20170019429A (en) 2017-02-21
TWI660066B (en) 2019-05-21
TW201606117A (en) 2016-02-16
SG11201609741XA (en) 2016-12-29
CN106663607A (en) 2017-05-10
KR102323392B1 (en) 2021-11-05
WO2015191268A1 (en) 2015-12-17
US20150361583A1 (en) 2015-12-17

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