JP6650258B2 - プラズマ処理装置及びプラズマ処理装置の運転方法 - Google Patents

プラズマ処理装置及びプラズマ処理装置の運転方法 Download PDF

Info

Publication number
JP6650258B2
JP6650258B2 JP2015245786A JP2015245786A JP6650258B2 JP 6650258 B2 JP6650258 B2 JP 6650258B2 JP 2015245786 A JP2015245786 A JP 2015245786A JP 2015245786 A JP2015245786 A JP 2015245786A JP 6650258 B2 JP6650258 B2 JP 6650258B2
Authority
JP
Japan
Prior art keywords
time
component
processing apparatus
plasma processing
intensity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015245786A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017112238A (ja
JP2017112238A5 (https=
Inventor
洋平 川口
洋平 川口
臼井　建人
建人 臼井
真人 戸上
真人 戸上
智己 井上
智己 井上
茂 中元
中元　　茂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2015245786A priority Critical patent/JP6650258B2/ja
Priority to KR1020160122799A priority patent/KR101835437B1/ko
Priority to US15/277,272 priority patent/US9934946B2/en
Priority to TW105131351A priority patent/TWI612554B/zh
Publication of JP2017112238A publication Critical patent/JP2017112238A/ja
Publication of JP2017112238A5 publication Critical patent/JP2017112238A5/ja
Application granted granted Critical
Publication of JP6650258B2 publication Critical patent/JP6650258B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2015245786A 2015-12-17 2015-12-17 プラズマ処理装置及びプラズマ処理装置の運転方法 Active JP6650258B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015245786A JP6650258B2 (ja) 2015-12-17 2015-12-17 プラズマ処理装置及びプラズマ処理装置の運転方法
KR1020160122799A KR101835437B1 (ko) 2015-12-17 2016-09-26 플라스마 처리 장치 및 플라스마 처리 장치의 운전 방법
US15/277,272 US9934946B2 (en) 2015-12-17 2016-09-27 Plasma processing apparatus and operating method of plasma processing apparatus
TW105131351A TWI612554B (zh) 2015-12-17 2016-09-29 電漿處理裝置及電漿處理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015245786A JP6650258B2 (ja) 2015-12-17 2015-12-17 プラズマ処理装置及びプラズマ処理装置の運転方法

Publications (3)

Publication Number Publication Date
JP2017112238A JP2017112238A (ja) 2017-06-22
JP2017112238A5 JP2017112238A5 (https=) 2019-02-14
JP6650258B2 true JP6650258B2 (ja) 2020-02-19

Family

ID=59065241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015245786A Active JP6650258B2 (ja) 2015-12-17 2015-12-17 プラズマ処理装置及びプラズマ処理装置の運転方法

Country Status (4)

Country Link
US (1) US9934946B2 (https=)
JP (1) JP6650258B2 (https=)
KR (1) KR101835437B1 (https=)
TW (1) TWI612554B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6239294B2 (ja) * 2013-07-18 2017-11-29 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法
JP6173851B2 (ja) * 2013-09-20 2017-08-02 株式会社日立ハイテクノロジーズ 分析方法およびプラズマエッチング装置
US11504821B2 (en) 2017-11-16 2022-11-22 Applied Materials, Inc. Predictive filter for polishing pad wear rate monitoring
KR102286360B1 (ko) * 2019-02-08 2021-08-05 주식회사 히타치하이테크 에칭 처리 장치, 에칭 처리 방법 및 검출기
CN112885694B (zh) * 2019-11-29 2025-10-03 东京毅力科创株式会社 夹具、处理系统及处理方法
KR102429079B1 (ko) * 2019-12-23 2022-08-03 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리에 이용하는 파장 선택 방법
TWI895368B (zh) * 2020-03-13 2025-09-01 日商東京威力科創股份有限公司 解析裝置、解析方法及解析程式
JP7467292B2 (ja) * 2020-03-13 2024-04-15 東京エレクトロン株式会社 解析装置、解析方法及び解析プログラム
US12062530B2 (en) * 2020-06-25 2024-08-13 Hitachi High-Tech Corporation Vacuum processing apparatus and vacuum processing method
KR102515864B1 (ko) 2020-09-17 2023-03-31 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
JP7253668B2 (ja) * 2021-03-15 2023-04-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6160621A (en) * 1999-09-30 2000-12-12 Lam Research Corporation Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
CN1956618B (zh) * 2001-06-15 2013-06-12 东京毅力科创株式会社 干蚀刻方法
US6903826B2 (en) * 2001-09-06 2005-06-07 Hitachi, Ltd. Method and apparatus for determining endpoint of semiconductor element fabricating process
JP4833687B2 (ja) * 2006-02-27 2011-12-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2008218898A (ja) * 2007-03-07 2008-09-18 Hitachi High-Technologies Corp プラズマ処理装置
EP2232430A4 (en) * 2007-12-03 2011-11-23 Abbott Medical Optics Inc METHOD OF MANAGING MEDICAL PRODUCTS
JP2011528967A (ja) 2008-07-28 2011-12-01 ベーエスハー ボッシュ ウント ジーメンス ハウスゲレーテ ゲゼルシャフト ミット ベシュレンクテル ハフツング 収着乾燥装置を備えた食器洗浄機
JP5383265B2 (ja) * 2009-03-17 2014-01-08 株式会社日立ハイテクノロジーズ エッチング装置、分析装置、エッチング処理方法、およびエッチング処理プログラム
KR101293799B1 (ko) * 2009-08-06 2013-08-06 시바우라 메카트로닉스 가부시끼가이샤 플라즈마 에칭 장치 및 플라즈마 에칭 방법
JP5411215B2 (ja) * 2011-08-01 2014-02-12 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9887071B2 (en) * 2011-12-16 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-zone EPD detectors
JP6177513B2 (ja) * 2012-09-28 2017-08-09 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6033453B2 (ja) 2012-10-17 2016-11-30 東京エレクトロン株式会社 多変量解析を用いたプラズマエンドポイント検出
JP6186152B2 (ja) 2013-03-29 2017-08-23 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6239294B2 (ja) * 2013-07-18 2017-11-29 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法

Also Published As

Publication number Publication date
KR20170072784A (ko) 2017-06-27
TW201724161A (zh) 2017-07-01
US9934946B2 (en) 2018-04-03
KR101835437B1 (ko) 2018-03-08
TWI612554B (zh) 2018-01-21
JP2017112238A (ja) 2017-06-22
US20170178874A1 (en) 2017-06-22

Similar Documents

Publication Publication Date Title
JP6650258B2 (ja) プラズマ処理装置及びプラズマ処理装置の運転方法
KR101656745B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 장치의 운전 방법
JP4464276B2 (ja) プラズマ処理方法及びプラズマ処理装置
KR102033438B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 장치 상태 예측 방법
US11556853B2 (en) Learning method, management device, and management program
JP7150951B2 (ja) プラズマ処理装置およびプラズマ処理方法
JP6804694B1 (ja) エッチング処理装置、エッチング処理方法および検出器
US7101458B2 (en) Plasma processing method and apparatus
CN119028882A (zh) 多频调制等离子表面处理方法与系统
TWI770596B (zh) 電漿處理方法及使用在電漿處理的波長選擇方法
JP6177513B2 (ja) プラズマ処理装置
JP2024523162A (ja) 質量分析法を使用してラジカルを検出する方法
JP7673992B2 (ja) 半導体処理システムのための改良された制御
US12525442B2 (en) Plasma processing apparatus, data analysis apparatus, and semiconductor device manufacturing system
CN117411461A (zh) 用于半导体处理系统的改进的控制
WO2026004036A1 (ja) プラズマ処理方法およびプラズマ処理装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151218

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170119

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170125

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181128

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20181128

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181130

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190823

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190903

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191101

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20191224

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200120

R150 Certificate of patent or registration of utility model

Ref document number: 6650258

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350