JP2017092393A - 電子装置 - Google Patents
電子装置 Download PDFInfo
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- JP2017092393A JP2017092393A JP2015224197A JP2015224197A JP2017092393A JP 2017092393 A JP2017092393 A JP 2017092393A JP 2015224197 A JP2015224197 A JP 2015224197A JP 2015224197 A JP2015224197 A JP 2015224197A JP 2017092393 A JP2017092393 A JP 2017092393A
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- 239000000758 substrate Substances 0.000 claims abstract description 141
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000000919 ceramic Substances 0.000 claims abstract description 6
- 238000005219 brazing Methods 0.000 claims description 26
- 239000010949 copper Substances 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 9
- 229910002113 barium titanate Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract 4
- 238000005476 soldering Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 49
- 239000000463 material Substances 0.000 description 32
- 238000004088 simulation Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910015363 Au—Sn Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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Abstract
Description
(2)前記上部電極は前記下部電極より厚いことが好ましい。ともに金属で形成されたベースおよび上部電極が絶縁基板を上下から挟むため、絶縁基板における応力の集中が緩和され、クラックを効果的に抑制することができる。
(3)前記絶縁基板の上面における前記上部電極の形状は、前記絶縁基板の下面における前記下部電極の形状と同一であることが好ましい。これにより、絶縁基板、下部電極および上部電極で平行平板キャパシタを形成し、所望のキャパシタンスを得ることができる。
(4)前記絶縁基板はチタン酸バリウムにより形成され、前記下部電極および前記上部電極は金を含み、前記ベースは銅を含むことが好ましい。これにより、ベースと絶縁基板とで熱膨張係数に違いがある場合でも、クラックを抑制することができる。またキャパシタンスを大きくすることができる。
(5)前記下部電極は直線状の辺を備え、前記辺には切り込みが設けられていることが好ましい。これにより絶縁基板の辺における応力の集中を抑制し、クラックを抑制することができる。
ベース10のCu層10aの厚さ:3mm
Cu層10cの厚さ:1mm
Mo層10bの厚さ:2mm
絶縁基板50の材料:BaTiO3
絶縁基板50の長さL1:2.5mm
絶縁基板50の長さL2:3.5mm
絶縁基板50の厚さ:0.2mm
下部電極52および上部電極54の材料:Au
下部電極52の厚さ:2μm
上部電極54の厚さ:4μm
距離D1:2mm
直線部51および53の長さL3、L4:1mm
ロウ材15の材料:Au−Sn合金(Sn組成比22%)
ベース10とチップとの接合温度:320℃
シミュレーションした温度:330℃
11 凹部
12 枠体
12a 開口部
13 リッド
14、16、16a、16b、16c、
16d、16e、20、22 チップ
15 ロウ材
18 半導体チップ
24 ボンディングワイヤ
30 フィードスルー
32、34 ボディ
32a 突出部
36 配線パターン
40 リード
50、70 絶縁基板
51、53、61、63、71 直線部
52、62、72 下部電極
55 曲線部
54、60 上部電極
57 切り込み
74 金属層
80 領域
100 半導体装置
Claims (5)
- 金属により形成されたベースと、
セラミックスにより形成された絶縁基板、前記絶縁基板の上面に設けられた上部電極、および前記絶縁基板の下面に設けられた下部電極を有するキャパシタと、を具備し、
前記上部電極および前記下部電極は、矩形の角部が欠如した形状を有するとともに、前記下部電極はロウ付けにより前記ベースと接合される電子装置。 - 前記上部電極は前記下部電極より厚い請求項1に記載の電子装置。
- 前記絶縁基板の上面における前記上部電極の形状は、前記絶縁基板の下面における前記下部電極の形状と同一である請求項1または2に記載の電子装置。
- 前記絶縁基板はチタン酸バリウムにより形成され、
前記下部電極および前記上部電極は金を含み、
前記ベースは銅を含む請求項1から3のいずれか一項に記載の電子装置。 - 前記下部電極は直線状の辺を備え、前記辺には切り込みが設けられている請求項1から4のいずれか一項に記載の電子装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015224197A JP6584928B2 (ja) | 2015-11-16 | 2015-11-16 | 電子装置 |
US15/352,287 US10475777B2 (en) | 2015-11-16 | 2016-11-15 | Semiconductor apparatus installing passive device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015224197A JP6584928B2 (ja) | 2015-11-16 | 2015-11-16 | 電子装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017092393A true JP2017092393A (ja) | 2017-05-25 |
JP6584928B2 JP6584928B2 (ja) | 2019-10-02 |
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JP2019041086A (ja) * | 2017-08-29 | 2019-03-14 | 京セラ株式会社 | 半導体パッケージおよび半導体装置 |
JP2020004851A (ja) * | 2018-06-28 | 2020-01-09 | エイブリック株式会社 | 半導体装置及び半導体チップ |
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US10510825B2 (en) * | 2017-10-23 | 2019-12-17 | Globalfoundries Singapore Pte. Ltd. | Metal-insulator-metal capacitor with improved time-dependent dielectric breakdown |
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JPH05166969A (ja) * | 1991-10-14 | 1993-07-02 | Fuji Electric Co Ltd | 半導体装置 |
JPH07263634A (ja) * | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | 伝送線路及び半導体装置 |
JPH0982844A (ja) * | 1995-09-20 | 1997-03-28 | Mitsubishi Electric Corp | 半導体モジュール基板及びその製造方法 |
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JP2019041086A (ja) * | 2017-08-29 | 2019-03-14 | 京セラ株式会社 | 半導体パッケージおよび半導体装置 |
JP7017341B2 (ja) | 2017-08-29 | 2022-02-08 | 京セラ株式会社 | 半導体パッケージおよび半導体装置 |
JP2020004851A (ja) * | 2018-06-28 | 2020-01-09 | エイブリック株式会社 | 半導体装置及び半導体チップ |
JP7045271B2 (ja) | 2018-06-28 | 2022-03-31 | エイブリック株式会社 | 半導体装置及び半導体チップ |
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