JP2017088995A - 蒸着装置 - Google Patents

蒸着装置 Download PDF

Info

Publication number
JP2017088995A
JP2017088995A JP2015250244A JP2015250244A JP2017088995A JP 2017088995 A JP2017088995 A JP 2017088995A JP 2015250244 A JP2015250244 A JP 2015250244A JP 2015250244 A JP2015250244 A JP 2015250244A JP 2017088995 A JP2017088995 A JP 2017088995A
Authority
JP
Japan
Prior art keywords
source
chamber
hole
processing
injection hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015250244A
Other languages
English (en)
Japanese (ja)
Inventor
ジンウ イ
Jin Woo Lee
ジンウ イ
ジョンス パク
Jung Soo Park
ジョンス パク
ビュンスン ホ
Byung Soon Her
ビュンスン ホ
ドキュン ハ
Do Kyun Ha
ドキュン ハ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Charm Eng Co Ltd
Charm Engineering Co Ltd
Original Assignee
Charm Eng Co Ltd
Charm Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Charm Eng Co Ltd, Charm Engineering Co Ltd filed Critical Charm Eng Co Ltd
Publication of JP2017088995A publication Critical patent/JP2017088995A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
JP2015250244A 2015-11-11 2015-12-22 蒸着装置 Pending JP2017088995A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150158471A KR101723923B1 (ko) 2015-11-11 2015-11-11 증착 장치
KR10-2015-0158471 2015-11-11

Publications (1)

Publication Number Publication Date
JP2017088995A true JP2017088995A (ja) 2017-05-25

Family

ID=58580676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015250244A Pending JP2017088995A (ja) 2015-11-11 2015-12-22 蒸着装置

Country Status (3)

Country Link
JP (1) JP2017088995A (ko)
KR (1) KR101723923B1 (ko)
TW (1) TWI627304B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018198628A1 (ja) 2017-04-27 2018-11-01 株式会社ダイヤメット 高温耐摩耗性、耐塩害性に優れる耐熱焼結材及びその製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101925579B1 (ko) * 2017-06-23 2018-12-05 참엔지니어링(주) 증착 장치
CN113381286B (zh) * 2021-06-02 2023-03-03 山东大学 离子束增强腐蚀制备晶体薄膜的方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62290874A (ja) * 1986-04-09 1987-12-17 マサチユ−セツツ・インステチユ−ト・オブ・テクノロジ− 表面被膜の光蒸着方法とその装置
JPH0480371A (ja) * 1990-07-24 1992-03-13 Canon Inc 堆積膜形成方法及び装置
JPH06232046A (ja) * 1992-11-30 1994-08-19 Univ Colorado State 光化学蒸着方法
JPH07111246A (ja) * 1993-10-12 1995-04-25 Nec Corp レーザｃｖｄ装置
JPH10280152A (ja) * 1997-04-14 1998-10-20 Nec Corp チャンバレスレーザｃｖｄ装置
JP2005023376A (ja) * 2003-07-02 2005-01-27 Sony Corp レーザｃｖｄ装置
JP2005174972A (ja) * 2003-12-08 2005-06-30 Sony Corp レーザｃｖｄ装置
JP2005179711A (ja) * 2003-12-17 2005-07-07 Shimadzu Corp レーザーｃｖｄ装置
JP2006193824A (ja) * 2004-03-30 2006-07-27 Mitsubishi Materials Corp 金属酸化物膜の成膜装置及び成膜方法並びに金属酸化物膜
JP2006225705A (ja) * 2005-02-16 2006-08-31 Laserfront Technologies Inc ガスウィンドウ及び化学気相成長装置
JP2011080142A (ja) * 2009-09-23 2011-04-21 Fei Co ビーム誘起処理における窒素ベース化合物の使用
JP2013181182A (ja) * 2012-02-29 2013-09-12 Omron Corp レーザ加工装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3479838B2 (ja) * 2000-10-19 2003-12-15 日本電気株式会社 パターン修正方法及びパターン修正装置
KR100521997B1 (ko) 2003-11-11 2005-10-17 참이앤티 주식회사 박막증착시스템
KR20080061893A (ko) * 2006-12-28 2008-07-03 엘지전자 주식회사 가스 공급 장치
CN102560429B (zh) * 2012-03-13 2014-12-03 中微半导体设备(上海)有限公司 金属有机气相沉积装置

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62290874A (ja) * 1986-04-09 1987-12-17 マサチユ−セツツ・インステチユ−ト・オブ・テクノロジ− 表面被膜の光蒸着方法とその装置
JPH0480371A (ja) * 1990-07-24 1992-03-13 Canon Inc 堆積膜形成方法及び装置
JPH06232046A (ja) * 1992-11-30 1994-08-19 Univ Colorado State 光化学蒸着方法
JPH07111246A (ja) * 1993-10-12 1995-04-25 Nec Corp レーザｃｖｄ装置
JPH10280152A (ja) * 1997-04-14 1998-10-20 Nec Corp チャンバレスレーザｃｖｄ装置
JP2005023376A (ja) * 2003-07-02 2005-01-27 Sony Corp レーザｃｖｄ装置
JP2005174972A (ja) * 2003-12-08 2005-06-30 Sony Corp レーザｃｖｄ装置
JP2005179711A (ja) * 2003-12-17 2005-07-07 Shimadzu Corp レーザーｃｖｄ装置
JP2006193824A (ja) * 2004-03-30 2006-07-27 Mitsubishi Materials Corp 金属酸化物膜の成膜装置及び成膜方法並びに金属酸化物膜
JP2006225705A (ja) * 2005-02-16 2006-08-31 Laserfront Technologies Inc ガスウィンドウ及び化学気相成長装置
JP2011080142A (ja) * 2009-09-23 2011-04-21 Fei Co ビーム誘起処理における窒素ベース化合物の使用
JP2013181182A (ja) * 2012-02-29 2013-09-12 Omron Corp レーザ加工装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018198628A1 (ja) 2017-04-27 2018-11-01 株式会社ダイヤメット 高温耐摩耗性、耐塩害性に優れる耐熱焼結材及びその製造方法

Also Published As

Publication number Publication date
TWI627304B (zh) 2018-06-21
TW201716619A (zh) 2017-05-16
KR101723923B1 (ko) 2017-04-11

Similar Documents

Publication Publication Date Title
TWI692047B (zh) 用於epi製程之晶圓加熱的二極體雷射
JP6224054B2 (ja) 蒸着装置及び蒸着方法
JP6194034B2 (ja) 蒸着装置及び蒸着方法
US9579750B2 (en) Particle control in laser processing systems
TW201931493A (zh) Epi中的多區域點加熱
JP2017088995A (ja) 蒸着装置
US10053777B2 (en) Thermal processing chamber
TW202004951A (zh) 加熱器塊以及熱處理設備和方法
JP4949135B2 (ja) 真空チャンバ用レーザ加熱装置及び真空プロセス用装置
KR102100801B1 (ko) 증착 장치 및 방법
US9700960B2 (en) Laser processing apparatus
CN107012446B (zh) 沉积装置及沉积方法
KR101925579B1 (ko) 증착 장치
KR101820098B1 (ko) 증착 장치 및 증착 방법
JP6318363B2 (ja) プラズマ処理装置及び方法、電子デバイスの製造方法
TW201720945A (zh) 用以測量一沈積率之偵測元件及測量組件及其之方法
KR102504805B1 (ko) 웨이퍼 막질 제거 장치
KR102310047B1 (ko) 증착 장치
KR101530033B1 (ko) 박막 증착 장치
TWI724822B (zh) 用於epi製程之晶圓加熱的二極體雷射

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170307

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170605

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170711

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20180227