JP2017073498A - 気相成長装置および異常検出方法 - Google Patents

気相成長装置および異常検出方法 Download PDF

Info

Publication number
JP2017073498A
JP2017073498A JP2015200348A JP2015200348A JP2017073498A JP 2017073498 A JP2017073498 A JP 2017073498A JP 2015200348 A JP2015200348 A JP 2015200348A JP 2015200348 A JP2015200348 A JP 2015200348A JP 2017073498 A JP2017073498 A JP 2017073498A
Authority
JP
Japan
Prior art keywords
value
unit
heater
threshold value
warning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015200348A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017073498A5 (enExample
Inventor
野 貴 憲 早
Takanori Hayano
野 貴 憲 早
藤 英 樹 伊
Hideki Ito
藤 英 樹 伊
島 達 彦 飯
Tatsuhiko Iijima
島 達 彦 飯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuflare Technology Inc
Original Assignee
Nuflare Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Priority to JP2015200348A priority Critical patent/JP2017073498A/ja
Priority to DE112016004625.1T priority patent/DE112016004625T5/de
Priority to PCT/JP2016/079070 priority patent/WO2017061334A1/ja
Priority to TW105132122A priority patent/TWI626331B/zh
Publication of JP2017073498A publication Critical patent/JP2017073498A/ja
Priority to US15/946,696 priority patent/US20180291507A1/en
Publication of JP2017073498A5 publication Critical patent/JP2017073498A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
JP2015200348A 2015-10-08 2015-10-08 気相成長装置および異常検出方法 Pending JP2017073498A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2015200348A JP2017073498A (ja) 2015-10-08 2015-10-08 気相成長装置および異常検出方法
DE112016004625.1T DE112016004625T5 (de) 2015-10-08 2016-09-30 Dampfphasenwachstumseinrichtung und Abnormalitätsdetektionsverfahren
PCT/JP2016/079070 WO2017061334A1 (ja) 2015-10-08 2016-09-30 気相成長装置および異常検出方法
TW105132122A TWI626331B (zh) 2015-10-08 2016-10-05 Gas phase growth device and abnormality detection method
US15/946,696 US20180291507A1 (en) 2015-10-08 2018-04-05 Vapor phase growth apparatus and abnormality detection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015200348A JP2017073498A (ja) 2015-10-08 2015-10-08 気相成長装置および異常検出方法

Publications (2)

Publication Number Publication Date
JP2017073498A true JP2017073498A (ja) 2017-04-13
JP2017073498A5 JP2017073498A5 (enExample) 2018-11-08

Family

ID=58487648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015200348A Pending JP2017073498A (ja) 2015-10-08 2015-10-08 気相成長装置および異常検出方法

Country Status (5)

Country Link
US (1) US20180291507A1 (enExample)
JP (1) JP2017073498A (enExample)
DE (1) DE112016004625T5 (enExample)
TW (1) TWI626331B (enExample)
WO (1) WO2017061334A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019058358A1 (de) * 2017-09-25 2019-03-28 X-Fab Semiconductor Foundries Gmbh Echtzeit monitoring eines mehrzonen-vertikalofens mit fruehzeitiger erkennung eines ausfalls eines heizzonen-elements

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002352938A (ja) * 2001-05-28 2002-12-06 Tokyo Electron Ltd 熱処理装置のヒ−タ素線の断線予測方法及び熱処理装置
JP2006165200A (ja) * 2004-12-06 2006-06-22 Kokusai Electric Semiconductor Service Inc 半導体製造装置における抵抗加熱ヒータの抵抗値検出装置、半導体製造装置における抵抗加熱ヒータの劣化診断装置及びネットワークシステム
JP2008269853A (ja) * 2007-04-17 2008-11-06 Tokyo Electron Ltd ヒータ素線の寿命予測方法，熱処理装置，記録媒体，ヒータ素線の寿命予測処理システム
JP2009245978A (ja) * 2008-03-28 2009-10-22 Yokogawa Electric Corp 半導体製造装置
WO2012165174A1 (ja) * 2011-06-01 2012-12-06 シャープ株式会社 抵抗加熱ヒータの劣化検出装置および方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3988942B2 (ja) * 2003-03-31 2007-10-10 株式会社国際電気セミコンダクターサービス ヒータ検査装置及びそれを搭載した半導体製造装置
JP4343253B1 (ja) * 2008-03-27 2009-10-14 Ｔｄｋ株式会社 密閉容器の蓋開閉装置及び該開閉装置を用いたガス置換装置
US8581153B2 (en) * 2008-09-30 2013-11-12 Tokyo Electron Limited Method of detecting abnormal placement of substrate, substrate processing method, computer-readable storage medium, and substrate processing apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002352938A (ja) * 2001-05-28 2002-12-06 Tokyo Electron Ltd 熱処理装置のヒ−タ素線の断線予測方法及び熱処理装置
JP2006165200A (ja) * 2004-12-06 2006-06-22 Kokusai Electric Semiconductor Service Inc 半導体製造装置における抵抗加熱ヒータの抵抗値検出装置、半導体製造装置における抵抗加熱ヒータの劣化診断装置及びネットワークシステム
JP2008269853A (ja) * 2007-04-17 2008-11-06 Tokyo Electron Ltd ヒータ素線の寿命予測方法，熱処理装置，記録媒体，ヒータ素線の寿命予測処理システム
JP2009245978A (ja) * 2008-03-28 2009-10-22 Yokogawa Electric Corp 半導体製造装置
WO2012165174A1 (ja) * 2011-06-01 2012-12-06 シャープ株式会社 抵抗加熱ヒータの劣化検出装置および方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019058358A1 (de) * 2017-09-25 2019-03-28 X-Fab Semiconductor Foundries Gmbh Echtzeit monitoring eines mehrzonen-vertikalofens mit fruehzeitiger erkennung eines ausfalls eines heizzonen-elements
DE102018101010B4 (de) 2017-09-25 2025-01-09 X-Fab Semiconductor Foundries Ag Echtzeit Monitoring eines Mehrzonen-Vertikalofens mit frühzeitiger Erkennung eines Ausfalls eines Heizzonen-Elements

Also Published As

Publication number Publication date
TW201723218A (zh) 2017-07-01
TWI626331B (zh) 2018-06-11
US20180291507A1 (en) 2018-10-11
DE112016004625T5 (de) 2018-06-21
WO2017061334A1 (ja) 2017-04-13

Similar Documents

Publication Publication Date Title
KR101182502B1 (ko) 기판의 이상 배치 상태의 검지 방법, 기판 처리 방법, 컴퓨터 판독 가능한 기억 매체 및 기판 처리 장치
JP4326570B2 (ja) ヒータ素線の寿命予測方法，熱処理装置，記録媒体，ヒータ素線の寿命予測処理システム
US11546970B2 (en) Plasma processing apparatus and temperature control method
KR102545993B1 (ko) 플라즈마 처리 장치, 온도 제어 방법 및 온도 제어 프로그램
TWI676017B (zh) 加熱管之氣體洩漏檢測裝置及加熱管之氣體洩漏檢測方法
WO2012165174A1 (ja) 抵抗加熱ヒータの劣化検出装置および方法
JP4420356B2 (ja) ヒータ素線の寿命予測方法，熱処理装置，記録媒体，ヒータ素線の寿命予測処理システム
JP2017073498A (ja) 気相成長装置および異常検出方法
JP2011151055A (ja) 温度測定方法及び基板処理装置
KR102201063B1 (ko) 히터 온도 변화를 이용한 히터 이상 여부 판단 장치 및 그 방법
EP4379782A1 (en) Heater life prediction method, heat treatment apparatus, and heater life prediction program
JP6272743B2 (ja) 基板処理装置
JP2002352938A (ja) 熱処理装置のヒ−タ素線の断線予測方法及び熱処理装置
US12417890B2 (en) Methods, systems, and apparatus for monitoring radiation output of lamps
KR20160094057A (ko) 반응 챔버의 히터 단선 감지시스템 및 방법
KR102900018B1 (ko) 히터 제어 장치
JP7494946B2 (ja) ヒータ制御装置
JP2019106462A (ja) 気相成長装置及び温度測定方法
KR20140011712A (ko) 증발장치
KR102452021B1 (ko) 온도 감시 장치, 열처리 장치 및 온도 감시 방법
WO2022191242A1 (ja) 基板処理装置、異常検知方法及び半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180921

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180921

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20191122

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200121

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20200421