DE112016004625T5 - Dampfphasenwachstumseinrichtung und Abnormalitätsdetektionsverfahren - Google Patents
Dampfphasenwachstumseinrichtung und Abnormalitätsdetektionsverfahren Download PDFInfo
- Publication number
- DE112016004625T5 DE112016004625T5 DE112016004625.1T DE112016004625T DE112016004625T5 DE 112016004625 T5 DE112016004625 T5 DE 112016004625T5 DE 112016004625 T DE112016004625 T DE 112016004625T DE 112016004625 T5 DE112016004625 T5 DE 112016004625T5
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- Prior art keywords
- heater
- threshold
- difference
- value
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000001947 vapour-phase growth Methods 0.000 title claims abstract description 29
- 238000001514 detection method Methods 0.000 title claims abstract description 18
- 230000005856 abnormality Effects 0.000 title claims description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 238000005259 measurement Methods 0.000 claims abstract description 10
- 238000012545 processing Methods 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 description 43
- 239000010408 film Substances 0.000 description 13
- 230000005855 radiation Effects 0.000 description 12
- 239000002994 raw material Substances 0.000 description 11
- 230000007547 defect Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000002950 deficient Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015200348A JP2017073498A (ja) | 2015-10-08 | 2015-10-08 | 気相成長装置および異常検出方法 |
| JP2015-200348 | 2015-10-08 | ||
| PCT/JP2016/079070 WO2017061334A1 (ja) | 2015-10-08 | 2016-09-30 | 気相成長装置および異常検出方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112016004625T5 true DE112016004625T5 (de) | 2018-06-21 |
Family
ID=58487648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112016004625.1T Ceased DE112016004625T5 (de) | 2015-10-08 | 2016-09-30 | Dampfphasenwachstumseinrichtung und Abnormalitätsdetektionsverfahren |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20180291507A1 (enExample) |
| JP (1) | JP2017073498A (enExample) |
| DE (1) | DE112016004625T5 (enExample) |
| TW (1) | TWI626331B (enExample) |
| WO (1) | WO2017061334A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102018101010B4 (de) * | 2017-09-25 | 2025-01-09 | X-Fab Semiconductor Foundries Ag | Echtzeit Monitoring eines Mehrzonen-Vertikalofens mit frühzeitiger Erkennung eines Ausfalls eines Heizzonen-Elements |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009245978A (ja) | 2008-03-28 | 2009-10-22 | Yokogawa Electric Corp | 半導体製造装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002352938A (ja) * | 2001-05-28 | 2002-12-06 | Tokyo Electron Ltd | 熱処理装置のヒ−タ素線の断線予測方法及び熱処理装置 |
| JP3988942B2 (ja) * | 2003-03-31 | 2007-10-10 | 株式会社国際電気セミコンダクターサービス | ヒータ検査装置及びそれを搭載した半導体製造装置 |
| JP2006165200A (ja) * | 2004-12-06 | 2006-06-22 | Kokusai Electric Semiconductor Service Inc | 半導体製造装置における抵抗加熱ヒータの抵抗値検出装置、半導体製造装置における抵抗加熱ヒータの劣化診断装置及びネットワークシステム |
| JP4326570B2 (ja) * | 2007-04-17 | 2009-09-09 | 東京エレクトロン株式会社 | ヒータ素線の寿命予測方法，熱処理装置，記録媒体，ヒータ素線の寿命予測処理システム |
| JP4343253B1 (ja) * | 2008-03-27 | 2009-10-14 | Ｔｄｋ株式会社 | 密閉容器の蓋開閉装置及び該開閉装置を用いたガス置換装置 |
| WO2010038674A1 (ja) * | 2008-09-30 | 2010-04-08 | 東京エレクトロン株式会社 | 基板の異常載置状態の検知方法、基板処理方法、コンピュータ読み取り可能な記憶媒体および基板処理装置 |
| WO2012165174A1 (ja) * | 2011-06-01 | 2012-12-06 | シャープ株式会社 | 抵抗加熱ヒータの劣化検出装置および方法 |
-
2015
- 2015-10-08 JP JP2015200348A patent/JP2017073498A/ja active Pending
-
2016
- 2016-09-30 WO PCT/JP2016/079070 patent/WO2017061334A1/ja not_active Ceased
- 2016-09-30 DE DE112016004625.1T patent/DE112016004625T5/de not_active Ceased
- 2016-10-05 TW TW105132122A patent/TWI626331B/zh active
-
2018
- 2018-04-05 US US15/946,696 patent/US20180291507A1/en not_active Abandoned
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009245978A (ja) | 2008-03-28 | 2009-10-22 | Yokogawa Electric Corp | 半導体製造装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201723218A (zh) | 2017-07-01 |
| WO2017061334A1 (ja) | 2017-04-13 |
| JP2017073498A (ja) | 2017-04-13 |
| TWI626331B (zh) | 2018-06-11 |
| US20180291507A1 (en) | 2018-10-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed | ||
| R002 | Refusal decision in examination/registration proceedings | ||
| R003 | Refusal decision now final |