JP2017059281A - 半導体記憶装置および半導体記憶装置におけるデータ消去方法 - Google Patents

半導体記憶装置および半導体記憶装置におけるデータ消去方法 Download PDF

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Publication number
JP2017059281A
JP2017059281A JP2015181628A JP2015181628A JP2017059281A JP 2017059281 A JP2017059281 A JP 2017059281A JP 2015181628 A JP2015181628 A JP 2015181628A JP 2015181628 A JP2015181628 A JP 2015181628A JP 2017059281 A JP2017059281 A JP 2017059281A
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page
data
pages
erasing
state
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Ceased
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JP2015181628A
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English (en)
Japanese (ja)
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JP2017059281A5 (enExample
Inventor
一行 伊達
Kazuyuki Date
一行 伊達
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Sony Corp
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Sony Corp
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Priority to JP2015181628A priority Critical patent/JP2017059281A/ja
Priority to US15/758,021 priority patent/US10658042B2/en
Priority to PCT/JP2016/072919 priority patent/WO2017047272A1/ja
Publication of JP2017059281A publication Critical patent/JP2017059281A/ja
Publication of JP2017059281A5 publication Critical patent/JP2017059281A5/ja
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0608—Saving storage space on storage systems
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0646—Horizontal data movement in storage systems, i.e. moving data in between storage devices or systems
    • G06F3/0652—Erasing, e.g. deleting, data cleaning, moving of data to a wastebasket
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/08—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers from or to individual record carriers, e.g. punched card, memory card, integrated circuit [IC] card or smart card
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7205—Cleaning, compaction, garbage collection, erase control
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
JP2015181628A 2015-09-15 2015-09-15 半導体記憶装置および半導体記憶装置におけるデータ消去方法 Ceased JP2017059281A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015181628A JP2017059281A (ja) 2015-09-15 2015-09-15 半導体記憶装置および半導体記憶装置におけるデータ消去方法
US15/758,021 US10658042B2 (en) 2015-09-15 2016-08-04 Semiconductor memory device and method of erasing data of partial page and overwriting partial page with predetermined data
PCT/JP2016/072919 WO2017047272A1 (ja) 2015-09-15 2016-08-04 半導体記憶装置および半導体記憶装置におけるデータ消去方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015181628A JP2017059281A (ja) 2015-09-15 2015-09-15 半導体記憶装置および半導体記憶装置におけるデータ消去方法

Publications (2)

Publication Number Publication Date
JP2017059281A true JP2017059281A (ja) 2017-03-23
JP2017059281A5 JP2017059281A5 (enExample) 2018-10-18

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JP2015181628A Ceased JP2017059281A (ja) 2015-09-15 2015-09-15 半導体記憶装置および半導体記憶装置におけるデータ消去方法

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Country Link
US (1) US10658042B2 (enExample)
JP (1) JP2017059281A (enExample)
WO (1) WO2017047272A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10685713B2 (en) 2018-04-25 2020-06-16 Samsung Electronics Co., Ltd. Storage device including nonvolatile memory device and controller

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2620445B (en) * 2022-07-08 2024-12-04 Kirintec Ltd Data erasure system

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7580151B2 (en) * 2003-10-01 2009-08-25 Seiko Epson Corporation Image processing system and method, printing system
KR20140021780A (ko) * 2012-08-10 2014-02-20 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 제어 방법
JP2014096122A (ja) 2012-11-12 2014-05-22 Genusion:Kk 不揮発性半導体記憶装置を用いた記憶媒体のファイルの記録方法
US9098401B2 (en) * 2012-11-21 2015-08-04 Apple Inc. Fast secure erasure schemes for non-volatile memory
US20160155495A1 (en) * 2013-07-08 2016-06-02 Wilus Institute Of Standards And Technology Inc. Memory system and method for processing data in memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10685713B2 (en) 2018-04-25 2020-06-16 Samsung Electronics Co., Ltd. Storage device including nonvolatile memory device and controller

Also Published As

Publication number Publication date
US20180254088A1 (en) 2018-09-06
WO2017047272A1 (ja) 2017-03-23
US10658042B2 (en) 2020-05-19

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