JP2017059281A5 - - Google Patents

Download PDF

Info

Publication number
JP2017059281A5
JP2017059281A5 JP2015181628A JP2015181628A JP2017059281A5 JP 2017059281 A5 JP2017059281 A5 JP 2017059281A5 JP 2015181628 A JP2015181628 A JP 2015181628A JP 2015181628 A JP2015181628 A JP 2015181628A JP 2017059281 A5 JP2017059281 A5 JP 2017059281A5
Authority
JP
Japan
Prior art keywords
page
erased
pages
data
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2015181628A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017059281A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2015181628A priority Critical patent/JP2017059281A/ja
Priority claimed from JP2015181628A external-priority patent/JP2017059281A/ja
Priority to US15/758,021 priority patent/US10658042B2/en
Priority to PCT/JP2016/072919 priority patent/WO2017047272A1/ja
Publication of JP2017059281A publication Critical patent/JP2017059281A/ja
Publication of JP2017059281A5 publication Critical patent/JP2017059281A5/ja
Ceased legal-status Critical Current

Links

Images

JP2015181628A 2015-09-15 2015-09-15 半導体記憶装置および半導体記憶装置におけるデータ消去方法 Ceased JP2017059281A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015181628A JP2017059281A (ja) 2015-09-15 2015-09-15 半導体記憶装置および半導体記憶装置におけるデータ消去方法
US15/758,021 US10658042B2 (en) 2015-09-15 2016-08-04 Semiconductor memory device and method of erasing data of partial page and overwriting partial page with predetermined data
PCT/JP2016/072919 WO2017047272A1 (ja) 2015-09-15 2016-08-04 半導体記憶装置および半導体記憶装置におけるデータ消去方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015181628A JP2017059281A (ja) 2015-09-15 2015-09-15 半導体記憶装置および半導体記憶装置におけるデータ消去方法

Publications (2)

Publication Number Publication Date
JP2017059281A JP2017059281A (ja) 2017-03-23
JP2017059281A5 true JP2017059281A5 (enExample) 2018-10-18

Family

ID=58288872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015181628A Ceased JP2017059281A (ja) 2015-09-15 2015-09-15 半導体記憶装置および半導体記憶装置におけるデータ消去方法

Country Status (3)

Country Link
US (1) US10658042B2 (enExample)
JP (1) JP2017059281A (enExample)
WO (1) WO2017047272A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102603916B1 (ko) 2018-04-25 2023-11-21 삼성전자주식회사 불휘발성 메모리 장치 및 제어기를 포함하는 스토리지 장치
GB2620445B (en) * 2022-07-08 2024-12-04 Kirintec Ltd Data erasure system

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7580151B2 (en) * 2003-10-01 2009-08-25 Seiko Epson Corporation Image processing system and method, printing system
KR20140021780A (ko) * 2012-08-10 2014-02-20 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 제어 방법
JP2014096122A (ja) 2012-11-12 2014-05-22 Genusion:Kk 不揮発性半導体記憶装置を用いた記憶媒体のファイルの記録方法
US9098401B2 (en) * 2012-11-21 2015-08-04 Apple Inc. Fast secure erasure schemes for non-volatile memory
US20160155495A1 (en) * 2013-07-08 2016-06-02 Wilus Institute Of Standards And Technology Inc. Memory system and method for processing data in memory

Similar Documents

Publication Publication Date Title
ATE546782T1 (de) Speichersystem
WO2017111798A8 (en) High retention time memory element with dual gate devices
DE602004022459D1 (de) Tragbare datenspeichereinrichtung mit einer speicheradressen-abbildungstabelle
WO2008132725A3 (en) A method for efficient storage of metadata in flash memory
EP2271987A4 (en) SAVING CHECKPOINT DATA IN NON-VOLATILE MEMORY
WO2014126820A3 (en) Group word line erase and erase-verify methods for 3d nand non-volatile memory
GB2476536B (en) Modified B+ tree to store nand memory indirection maps
JP2014022031A5 (enExample)
WO2016022583A3 (en) Write operations in a tree-based distributed file system
ATE490540T1 (de) Variable programmierung von nicht-flüchtigem speicher
WO2016048837A3 (en) Host-managed non-volatile memory
JP2012198977A5 (ja) 半導体装置
ATE512441T1 (de) Bereitstellung von energiereduktion bei der datenspeicherung in einem speicher
IN2014MU00845A (enExample)
JP2014527254A5 (enExample)
WO2015020900A3 (en) Method and device for error correcting code (ecc) error handling
WO2008050337A3 (en) Erase history-based flash writing method
GB2571218A (en) Memory cell structure
JP2017027244A5 (enExample)
TW200634838A (en) Page buffer of flash memory device with improved program operation performance and program operation control method
WO2017119995A3 (en) Fast bulk secure erase at the device level
JP2017059281A5 (enExample)
EP2779173A3 (en) 2T and flash memory array
WO2015116142A3 (en) Memory cell having resistive and capacitive storage elements
JP2014063540A5 (enExample)