JP2017011225A - 研磨方法及び不純物除去用組成物並びに基板及びその製造方法 - Google Patents

研磨方法及び不純物除去用組成物並びに基板及びその製造方法 Download PDF

Info

Publication number
JP2017011225A
JP2017011225A JP2015128105A JP2015128105A JP2017011225A JP 2017011225 A JP2017011225 A JP 2017011225A JP 2015128105 A JP2015128105 A JP 2015128105A JP 2015128105 A JP2015128105 A JP 2015128105A JP 2017011225 A JP2017011225 A JP 2017011225A
Authority
JP
Japan
Prior art keywords
polishing
composition
polished
acid
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015128105A
Other languages
English (en)
Japanese (ja)
Inventor
康登 石田
Yasuto Ishida
康登 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Priority to JP2015128105A priority Critical patent/JP2017011225A/ja
Priority to PCT/JP2016/067570 priority patent/WO2016208445A1/ja
Priority to TW105119985A priority patent/TWI730970B/zh
Publication of JP2017011225A publication Critical patent/JP2017011225A/ja
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2015128105A 2015-06-25 2015-06-25 研磨方法及び不純物除去用組成物並びに基板及びその製造方法 Pending JP2017011225A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015128105A JP2017011225A (ja) 2015-06-25 2015-06-25 研磨方法及び不純物除去用組成物並びに基板及びその製造方法
PCT/JP2016/067570 WO2016208445A1 (ja) 2015-06-25 2016-06-13 研磨方法及び不純物除去用組成物並びに基板及びその製造方法
TW105119985A TWI730970B (zh) 2015-06-25 2016-06-24 研磨方法及雜質去除用組成物以及基板及其製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015128105A JP2017011225A (ja) 2015-06-25 2015-06-25 研磨方法及び不純物除去用組成物並びに基板及びその製造方法

Publications (1)

Publication Number Publication Date
JP2017011225A true JP2017011225A (ja) 2017-01-12

Family

ID=57585285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015128105A Pending JP2017011225A (ja) 2015-06-25 2015-06-25 研磨方法及び不純物除去用組成物並びに基板及びその製造方法

Country Status (3)

Country Link
JP (1) JP2017011225A (zh)
TW (1) TWI730970B (zh)
WO (1) WO2016208445A1 (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018168207A1 (ja) * 2017-03-14 2018-09-20 株式会社フジミインコーポレーテッド 表面処理組成物、その製造方法、およびこれを用いた表面処理方法
KR20190035490A (ko) * 2017-09-26 2019-04-03 가부시키가이샤 후지미인코퍼레이티드 표면 처리 조성물, 그 제조 방법, 및 이것을 사용한 표면 처리 방법
JP2020155568A (ja) * 2019-03-20 2020-09-24 三菱ケミカル株式会社 Cmp後洗浄液、洗浄方法及び半導体ウェハの製造方法
US11060051B2 (en) 2018-10-12 2021-07-13 Fujimi Incorporated Composition for rinsing or cleaning a surface with ceria particles adhered
US11339310B2 (en) 2017-03-22 2022-05-24 Fujimi Incorporated Polishing composition
JP7389007B2 (ja) 2019-10-18 2023-11-29 三星エスディアイ株式会社 シリコン窒化膜エッチング用組成物及びこれを用いたシリコン窒化膜エッチング方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7216478B2 (ja) * 2017-09-22 2023-02-01 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理組成物の製造方法、表面処理方法、および半導体基板の製造方法
KR102588218B1 (ko) * 2017-09-22 2023-10-13 가부시키가이샤 후지미인코퍼레이티드 표면 처리 조성물, 표면 처리 조성물의 제조 방법, 표면 처리 방법 및 반도체 기판의 제조 방법
JP7299102B2 (ja) * 2018-09-25 2023-06-27 株式会社フジミインコーポレーテッド 中間原料、ならびにこれを用いた研磨用組成物および表面処理組成物

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005260213A (ja) * 2004-02-09 2005-09-22 Mitsubishi Chemicals Corp 半導体デバイス用基板洗浄液及び洗浄方法
JP2005268409A (ja) * 2004-03-17 2005-09-29 Toshiba Corp 有機膜用化学的機械的研磨スラリー、および有機膜の化学的機械的研磨方法
JP2006228955A (ja) * 2005-02-17 2006-08-31 Fuji Photo Film Co Ltd 研磨液及びそれを用いた研磨方法
JP2007150184A (ja) * 2005-11-30 2007-06-14 Jsr Corp 有機膜研磨用化学的機械的研磨スラリー、化学的機械的研磨方法、ならびに半導体装置の製造方法
JP2007288155A (ja) * 2006-03-22 2007-11-01 Fujifilm Corp 半導体デバイス用基板の洗浄液及びそれを用いた洗浄方法
JP2009070904A (ja) * 2007-09-11 2009-04-02 Mitsui Chemicals Inc 研磨用組成物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040029494A1 (en) * 2002-08-09 2004-02-12 Souvik Banerjee Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques
TWI241626B (en) * 2003-06-02 2005-10-11 Toshiba Corp Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device
KR20080025697A (ko) * 2005-05-26 2008-03-21 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 구리를 부동태화하는 cmp후 세정 조성물 및 이용 방법
JP5561914B2 (ja) * 2008-05-16 2014-07-30 関東化学株式会社 半導体基板洗浄液組成物
JP5401359B2 (ja) * 2010-02-16 2014-01-29 花王株式会社 硬質表面用アルカリ洗浄剤組成物

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005260213A (ja) * 2004-02-09 2005-09-22 Mitsubishi Chemicals Corp 半導体デバイス用基板洗浄液及び洗浄方法
JP2005268409A (ja) * 2004-03-17 2005-09-29 Toshiba Corp 有機膜用化学的機械的研磨スラリー、および有機膜の化学的機械的研磨方法
JP2006228955A (ja) * 2005-02-17 2006-08-31 Fuji Photo Film Co Ltd 研磨液及びそれを用いた研磨方法
JP2007150184A (ja) * 2005-11-30 2007-06-14 Jsr Corp 有機膜研磨用化学的機械的研磨スラリー、化学的機械的研磨方法、ならびに半導体装置の製造方法
JP2007288155A (ja) * 2006-03-22 2007-11-01 Fujifilm Corp 半導体デバイス用基板の洗浄液及びそれを用いた洗浄方法
JP2009070904A (ja) * 2007-09-11 2009-04-02 Mitsui Chemicals Inc 研磨用組成物

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI741139B (zh) * 2017-03-14 2021-10-01 日商福吉米股份有限公司 表面處理組合物、其製造方法以及使用此組合物的表面處理方法
CN110419094B (zh) * 2017-03-14 2023-12-19 福吉米株式会社 表面处理组合物、其制造方法、及使用其的表面处理方法
US11377627B2 (en) 2017-03-14 2022-07-05 Fujimi Incorporated Composition for surface treatment, method for producing the same, and surface treatment method using the same
CN110419094A (zh) * 2017-03-14 2019-11-05 福吉米株式会社 表面处理组合物、其制造方法、及使用其的表面处理方法
JPWO2018168207A1 (ja) * 2017-03-14 2020-01-16 株式会社フジミインコーポレーテッド 表面処理組成物、その製造方法、およびこれを用いた表面処理方法
JP7093765B2 (ja) 2017-03-14 2022-06-30 株式会社フジミインコーポレーテッド 表面処理組成物、その製造方法、およびこれを用いた表面処理方法
WO2018168207A1 (ja) * 2017-03-14 2018-09-20 株式会社フジミインコーポレーテッド 表面処理組成物、その製造方法、およびこれを用いた表面処理方法
US11339310B2 (en) 2017-03-22 2022-05-24 Fujimi Incorporated Polishing composition
JP2019059915A (ja) * 2017-09-26 2019-04-18 株式会社フジミインコーポレーテッド 表面処理組成物、その製造方法、およびこれを用いた表面処理方法
JP7168370B2 (ja) 2017-09-26 2022-11-09 株式会社フジミインコーポレーテッド 表面処理組成物、その製造方法、およびこれを用いた表面処理方法
KR102497508B1 (ko) * 2017-09-26 2023-02-08 가부시키가이샤 후지미인코퍼레이티드 표면 처리 조성물, 그 제조 방법, 및 이것을 사용한 표면 처리 방법
KR20190035490A (ko) * 2017-09-26 2019-04-03 가부시키가이샤 후지미인코퍼레이티드 표면 처리 조성물, 그 제조 방법, 및 이것을 사용한 표면 처리 방법
US11060051B2 (en) 2018-10-12 2021-07-13 Fujimi Incorporated Composition for rinsing or cleaning a surface with ceria particles adhered
JP2020155568A (ja) * 2019-03-20 2020-09-24 三菱ケミカル株式会社 Cmp後洗浄液、洗浄方法及び半導体ウェハの製造方法
JP7215267B2 (ja) 2019-03-20 2023-01-31 三菱ケミカル株式会社 Cmp後洗浄液、洗浄方法及び半導体ウェハの製造方法
JP7389007B2 (ja) 2019-10-18 2023-11-29 三星エスディアイ株式会社 シリコン窒化膜エッチング用組成物及びこれを用いたシリコン窒化膜エッチング方法

Also Published As

Publication number Publication date
TW201724236A (zh) 2017-07-01
WO2016208445A1 (ja) 2016-12-29
TWI730970B (zh) 2021-06-21

Similar Documents

Publication Publication Date Title
TWI730970B (zh) 研磨方法及雜質去除用組成物以及基板及其製造方法
TWI408195B (zh) 拋光組合物及使用經胺基矽烷處理之研磨顆粒的方法
KR101525249B1 (ko) 연마용 조성물
JP6156630B2 (ja) 化学機械研磨用水系分散体および化学機械研磨方法
CN110283572B (zh) 研磨用组合物、研磨方法及基板的制造方法
US8262435B2 (en) Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and chemical mechanical polishing aqueous dispersion preparation kit
EP2071615A1 (en) Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method for semiconductor device
KR20150083085A (ko) 연마용 조성물
JP5576112B2 (ja) ヨウ素酸塩を含有する化学機械研磨用組成物及び化学機械研磨方法
KR20090038038A (ko) 금속용 연마액 및 이것을 이용한 연마방법
WO2009064365A2 (en) Compositions and methods for ruthenium and tantalum barrier cmp
WO2009085164A2 (en) Halide anions for metal removal rate control
JP6697362B2 (ja) 表面処理組成物、ならびにこれを用いた表面処理方法および半導体基板の製造方法
WO2013115172A1 (ja) 金属用研磨液及び研磨方法
JP2016069522A (ja) 組成物
JP2013120885A (ja) Cmp用研磨液及びこの研磨液を用いた研磨方法
TWI754376B (zh) 選擇性化學機械拋光鈷、氧化鋯、多晶矽及二氧化矽膜之方法
JP7015663B2 (ja) 研磨用組成物及びその製造方法並びに研磨方法
JP2015209523A (ja) 有機膜研磨用組成物および研磨方法
WO2015140850A1 (ja) 研磨用組成物および研磨方法
JP6557243B2 (ja) 研磨用組成物
JP2013232628A (ja) 研磨組成物、研磨組成物の製造方法および基板の製造方法
JPWO2017163942A1 (ja) 金属を含む層を有する研磨対象物の研磨用組成物
JP2008118099A (ja) 金属用研磨液及びこの研磨液を用いた被研磨膜の研磨方法
KR20210132204A (ko) Cmp 슬러리에 대한 입자 분산을 개선하는 첨가제

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20160427

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20160427

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180308

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190312

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190426

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20191001

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191209

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20191217

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20200117