JP2016540393A5 - - Google Patents

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Publication number
JP2016540393A5
JP2016540393A5 JP2016516529A JP2016516529A JP2016540393A5 JP 2016540393 A5 JP2016540393 A5 JP 2016540393A5 JP 2016516529 A JP2016516529 A JP 2016516529A JP 2016516529 A JP2016516529 A JP 2016516529A JP 2016540393 A5 JP2016540393 A5 JP 2016540393A5
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JP
Japan
Prior art keywords
magnetic field
substrate
dipole
plane
dipole coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2016516529A
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English (en)
Japanese (ja)
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JP2016540393A (ja
Filing date
Publication date
Priority claimed from US14/036,526 external-priority patent/US9495899B2/en
Application filed filed Critical
Publication of JP2016540393A publication Critical patent/JP2016540393A/ja
Publication of JP2016540393A5 publication Critical patent/JP2016540393A5/ja
Ceased legal-status Critical Current

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JP2016516529A 2013-09-25 2014-09-24 面内磁界を使用する非接触データ通信、ならびに関連するシステムおよび方法 Ceased JP2016540393A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/036,526 US9495899B2 (en) 2013-09-25 2013-09-25 Contactless data communication using in-plane magnetic fields, and related systems and methods
US14/036,526 2013-09-25
PCT/US2014/057176 WO2015048104A2 (en) 2013-09-25 2014-09-24 Contactless data communication using in-plane magnetic fields, and related systems and methods

Publications (2)

Publication Number Publication Date
JP2016540393A JP2016540393A (ja) 2016-12-22
JP2016540393A5 true JP2016540393A5 (enExample) 2017-10-05

Family

ID=51846938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016516529A Ceased JP2016540393A (ja) 2013-09-25 2014-09-24 面内磁界を使用する非接触データ通信、ならびに関連するシステムおよび方法

Country Status (8)

Country Link
US (2) US9495899B2 (enExample)
EP (1) EP3050218A2 (enExample)
JP (1) JP2016540393A (enExample)
KR (1) KR20160062083A (enExample)
CN (1) CN105580284B (enExample)
BR (1) BR112016006531A2 (enExample)
CA (1) CA2922509A1 (enExample)
WO (1) WO2015048104A2 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6202853B2 (ja) * 2013-03-29 2017-09-27 キヤノン株式会社 給電装置
US9495899B2 (en) 2013-09-25 2016-11-15 Qualcomm Incorporated Contactless data communication using in-plane magnetic fields, and related systems and methods
CN103794224B (zh) * 2014-01-27 2017-01-11 华中科技大学 一种基于相变磁性材料的非易失性逻辑器件及逻辑操作方法
WO2016154762A1 (en) * 2015-04-02 2016-10-06 Insight Diagnostics Inc. Portable detection device
US10027381B2 (en) 2016-07-27 2018-07-17 Micron Technology, Inc. Method and apparatus for inductive coupling signal transmission
US10580560B2 (en) 2016-12-28 2020-03-03 Wits Co., Ltd. Coil module
GB2565310B (en) * 2017-08-08 2020-05-13 Advanced Risc Mach Ltd 3D interconnected die stack
JP2019047030A (ja) 2017-09-05 2019-03-22 Tdk株式会社 スピン流磁化反転素子、磁気抵抗効果素子、磁気メモリ及び高周波磁気素子
US10741318B2 (en) * 2017-09-05 2020-08-11 Tdk Corporation Spin current magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and high-frequency magnetic element
US11115084B2 (en) * 2018-11-27 2021-09-07 Allegro Microsystems, Llc Isolated data transfer system
US11782105B2 (en) 2022-01-17 2023-10-10 Allegro Microsystems, Llc Fabricating planarized coil layer in contact with magnetoresistance element
US11630169B1 (en) 2022-01-17 2023-04-18 Allegro Microsystems, Llc Fabricating a coil above and below a magnetoresistance element
US12364163B2 (en) 2022-08-30 2025-07-15 Allegro Microsystems, Llc Fabricating an electroconductive contact on a top layer of a tunneling magnetoresistance element using two hard masks

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WO2002091615A1 (en) * 2001-05-04 2002-11-14 Koninklijke Philips Electronics N.V. Communication device with a coil configuration for the communication with stationary data carriers
US7440479B2 (en) * 2001-09-06 2008-10-21 Brown University Magneto-optoelectronic switch and sensor
US6859063B2 (en) * 2002-04-11 2005-02-22 Integrated Magnetoelectronics Corporation Transpinnor-based transmission line transceivers and applications
US7164181B2 (en) * 2003-07-30 2007-01-16 Hewlett-Packard Development Company, L.P. Spin injection devices
WO2005064356A2 (en) 2003-12-23 2005-07-14 Koninklijke Philips Electronics N.V. High sensitivity magnetic built-in current sensor
US7088611B2 (en) 2004-11-30 2006-08-08 Infineon Technologies Ag MRAM with switchable ferromagnetic offset layer
JP2007234896A (ja) * 2006-03-01 2007-09-13 Toyota Motor Corp 信号伝達装置
US8120949B2 (en) * 2006-04-27 2012-02-21 Avalanche Technology, Inc. Low-cost non-volatile flash-RAM memory
JP4194110B2 (ja) * 2007-03-12 2008-12-10 オムロン株式会社 磁気カプラ素子および磁気結合型アイソレータ
FR2914132B1 (fr) * 2007-03-23 2012-11-02 Commissariat Energie Atomique Dispositif electronique pour le transport d'informations numeriques.
KR20100119556A (ko) 2008-02-11 2010-11-09 퀄컴 엠이엠스 테크놀로지스, 인크. Ｍｅｍｓ 기반 디스플레이용의 전기적 구동 변수의 전기적 측정을 위한 방법 및 장치
US7894248B2 (en) * 2008-09-12 2011-02-22 Grandis Inc. Programmable and redundant circuitry based on magnetic tunnel junction (MTJ)
JP5265689B2 (ja) * 2008-09-22 2013-08-14 アルプス・グリーンデバイス株式会社 磁気結合型アイソレータ
US8630585B2 (en) * 2008-09-24 2014-01-14 Lg Electronics Inc. Method and apparatus for communicating with external interface device using contactless
JP5299675B2 (ja) * 2008-11-27 2013-09-25 Ｔｄｋ株式会社 信号伝送装置
JP5440837B2 (ja) * 2009-03-26 2014-03-12 Ｔｄｋ株式会社 信号伝達装置
JP5375952B2 (ja) * 2009-03-31 2013-12-25 日本電気株式会社 半導体装置
CN201788291U (zh) * 2010-03-11 2011-04-06 清华大学 极低频发射接收系统、极低频发射机和极低频接收机
US8547736B2 (en) * 2010-08-03 2013-10-01 Qualcomm Incorporated Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
US8482968B2 (en) 2010-11-13 2013-07-09 International Business Machines Corporation Non-volatile magnetic tunnel junction transistor
US8890266B2 (en) 2011-01-31 2014-11-18 Everspin Technologies, Inc. Fabrication process and layout for magnetic sensor arrays
US8976577B2 (en) 2011-04-07 2015-03-10 Tom A. Agan High density magnetic random access memory
JP5809903B2 (ja) * 2011-09-21 2015-11-11 株式会社東芝 不揮発性記憶装置
US8791533B2 (en) 2012-01-30 2014-07-29 Broadcom Corporation Semiconductor package having an interposer configured for magnetic signaling
JP5464307B2 (ja) * 2012-02-24 2014-04-09 株式会社村田製作所 アンテナ装置および無線通信装置
US9030780B2 (en) * 2012-08-08 2015-05-12 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for reading a non-volatile memory using a spin torque oscillator
US9495899B2 (en) 2013-09-25 2016-11-15 Qualcomm Incorporated Contactless data communication using in-plane magnetic fields, and related systems and methods

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