JP2016540110A5 - - Google Patents

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Publication number
JP2016540110A5
JP2016540110A5 JP2016516865A JP2016516865A JP2016540110A5 JP 2016540110 A5 JP2016540110 A5 JP 2016540110A5 JP 2016516865 A JP2016516865 A JP 2016516865A JP 2016516865 A JP2016516865 A JP 2016516865A JP 2016540110 A5 JP2016540110 A5 JP 2016540110A5
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JP
Japan
Prior art keywords
conductive
wall
silicon carbide
low resistivity
resistivity silicon
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JP2016516865A
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English (en)
Japanese (ja)
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JP6450372B2 (ja
JP2016540110A (ja
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Priority claimed from US14/039,654 external-priority patent/US9384937B2/en
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Publication of JP2016540110A publication Critical patent/JP2016540110A/ja
Publication of JP2016540110A5 publication Critical patent/JP2016540110A5/ja
Application granted granted Critical
Publication of JP6450372B2 publication Critical patent/JP6450372B2/ja
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JP2016516865A 2013-09-27 2014-09-24 イオン注入装置のＳｉＣコーティング Active JP6450372B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/039,654 US9384937B2 (en) 2013-09-27 2013-09-27 SiC coating in an ion implanter
US14/039,654 2013-09-27
PCT/US2014/057201 WO2015048122A1 (en) 2013-09-27 2014-09-24 SiC COATING IN AN ION IMPLANTER

Publications (3)

Publication Number Publication Date
JP2016540110A JP2016540110A (ja) 2016-12-22
JP2016540110A5 true JP2016540110A5 (https=) 2017-09-21
JP6450372B2 JP6450372B2 (ja) 2019-01-09

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ID=52739156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016516865A Active JP6450372B2 (ja) 2013-09-27 2014-09-24 イオン注入装置のＳｉＣコーティング

Country Status (6)

Country Link
US (2) US9384937B2 (https=)
JP (1) JP6450372B2 (https=)
KR (1) KR101967238B1 (https=)
CN (1) CN105593401B (https=)
TW (1) TWI673776B (https=)
WO (1) WO2015048122A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9384937B2 (en) 2013-09-27 2016-07-05 Varian Semiconductor Equipment Associates, Inc. SiC coating in an ion implanter
US9543110B2 (en) * 2013-12-20 2017-01-10 Axcelis Technologies, Inc. Reduced trace metals contamination ion source for an ion implantation system
JP6539414B2 (ja) * 2015-07-07 2019-07-03 バリュー エンジニアリング リミテッドＶａｌｕｅ Ｅｎｇｉｎｅｅｒｉｎｇ，Ｌｔｄ． イオン注入器用リペラー、カソード、チャンバーウォール、スリット部材、及びこれを含むイオン発生装置
US10460941B2 (en) * 2016-11-08 2019-10-29 Varian Semiconductor Equipment Associates, Inc. Plasma doping using a solid dopant source
US9934933B1 (en) * 2017-01-19 2018-04-03 Kla-Tencor Corporation Extractor electrode for electron source
US10276340B1 (en) * 2017-12-20 2019-04-30 Varian Semiconductor Equipment Associates, Inc. Low particle capacitively coupled components for workpiece processing
CN113261073B (zh) * 2018-12-15 2024-07-16 恩特格里斯公司 利用非钨材料的氟离子植入系统和其使用方法
US12033843B2 (en) * 2020-03-26 2024-07-09 Agilent Technologies, Inc. Mass spectrometry ION source
WO2023139532A1 (en) * 2022-01-21 2023-07-27 Cisterni Marco Ion source
US12431338B2 (en) 2023-11-03 2025-09-30 Applied Materials, Inc. Composite structures for semiconductor process chambers

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US9384937B2 (en) 2013-09-27 2016-07-05 Varian Semiconductor Equipment Associates, Inc. SiC coating in an ion implanter

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