KR101967238B1 - 이온 주입기내 ＳｉＣ 코팅 - Google Patents

이온 주입기내 ＳｉＣ 코팅 Download PDF

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Publication number
KR101967238B1
KR101967238B1 KR1020167010646A KR20167010646A KR101967238B1 KR 101967238 B1 KR101967238 B1 KR 101967238B1 KR 1020167010646 A KR1020167010646 A KR 1020167010646A KR 20167010646 A KR20167010646 A KR 20167010646A KR 101967238 B1 KR101967238 B1 KR 101967238B1
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South Korea
Prior art keywords
conductive
wall
silicon carbide
ion source
coated
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KR1020167010646A
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English (en)
Korean (ko)
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KR20160064147A (ko
Inventor
로버트 제이. 마손
샤르둘 파텔
로버트 에이치. 베텐코우트
티모씨 제이. 밀러
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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Publication of KR20160064147A publication Critical patent/KR20160064147A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/083—Beam forming

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
KR1020167010646A 2013-09-27 2014-09-24 이온 주입기내 ＳｉＣ 코팅 Active KR101967238B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/039,654 US9384937B2 (en) 2013-09-27 2013-09-27 SiC coating in an ion implanter
US14/039,654 2013-09-27
PCT/US2014/057201 WO2015048122A1 (en) 2013-09-27 2014-09-24 SiC COATING IN AN ION IMPLANTER

Publications (2)

Publication Number Publication Date
KR20160064147A KR20160064147A (ko) 2016-06-07
KR101967238B1 true KR101967238B1 (ko) 2019-04-09

Family

ID=52739156

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167010646A Active KR101967238B1 (ko) 2013-09-27 2014-09-24 이온 주입기내 ＳｉＣ 코팅

Country Status (6)

Country Link
US (2) US9384937B2 (https=)
JP (1) JP6450372B2 (https=)
KR (1) KR101967238B1 (https=)
CN (1) CN105593401B (https=)
TW (1) TWI673776B (https=)
WO (1) WO2015048122A1 (https=)

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US9384937B2 (en) 2013-09-27 2016-07-05 Varian Semiconductor Equipment Associates, Inc. SiC coating in an ion implanter
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JP6539414B2 (ja) * 2015-07-07 2019-07-03 バリュー エンジニアリング リミテッドＶａｌｕｅ Ｅｎｇｉｎｅｅｒｉｎｇ，Ｌｔｄ． イオン注入器用リペラー、カソード、チャンバーウォール、スリット部材、及びこれを含むイオン発生装置
US10460941B2 (en) * 2016-11-08 2019-10-29 Varian Semiconductor Equipment Associates, Inc. Plasma doping using a solid dopant source
US9934933B1 (en) * 2017-01-19 2018-04-03 Kla-Tencor Corporation Extractor electrode for electron source
US10276340B1 (en) * 2017-12-20 2019-04-30 Varian Semiconductor Equipment Associates, Inc. Low particle capacitively coupled components for workpiece processing
CN113261073B (zh) * 2018-12-15 2024-07-16 恩特格里斯公司 利用非钨材料的氟离子植入系统和其使用方法
US12033843B2 (en) * 2020-03-26 2024-07-09 Agilent Technologies, Inc. Mass spectrometry ION source
WO2023139532A1 (en) * 2022-01-21 2023-07-27 Cisterni Marco Ion source
US12431338B2 (en) 2023-11-03 2025-09-30 Applied Materials, Inc. Composite structures for semiconductor process chambers

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JPH09259779A (ja) * 1996-03-15 1997-10-03 Nissin Electric Co Ltd イオン源およびそれを用いたイオン注入装置
US6090733A (en) 1997-08-27 2000-07-18 Bridgestone Corporation Sintered silicon carbide and method for producing the same
US6331713B1 (en) 1999-10-06 2001-12-18 Applied Materials, Inc. Movable ion source assembly
US7018947B2 (en) * 2000-02-24 2006-03-28 Shipley Company, L.L.C. Low resistivity silicon carbide
US6710338B2 (en) * 2000-10-18 2004-03-23 Fei Company Focused ion beam system
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US6929720B2 (en) * 2003-06-09 2005-08-16 Tokyo Electron Limited Sputtering source for ionized physical vapor deposition of metals
US20080223409A1 (en) * 2003-12-12 2008-09-18 Horsky Thomas N Method and apparatus for extending equipment uptime in ion implantation
FR2871934B1 (fr) * 2004-06-16 2006-09-22 Ion Beam Services Sa Alimentation d'implanteur ionique prevue pour une limitation de l'effet de charge
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US20090084988A1 (en) * 2007-09-27 2009-04-02 Varian Semiconductor Equipment Associates, Inc. Single wafer implanter for silicon-on-insulator wafer fabrication
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US9384937B2 (en) 2013-09-27 2016-07-05 Varian Semiconductor Equipment Associates, Inc. SiC coating in an ion implanter

Also Published As

Publication number Publication date
JP6450372B2 (ja) 2019-01-09
TWI673776B (zh) 2019-10-01
US9793086B2 (en) 2017-10-17
US20160293378A1 (en) 2016-10-06
US20150090897A1 (en) 2015-04-02
KR20160064147A (ko) 2016-06-07
US9384937B2 (en) 2016-07-05
CN105593401B (zh) 2017-10-27
WO2015048122A1 (en) 2015-04-02
JP2016540110A (ja) 2016-12-22
CN105593401A (zh) 2016-05-18
TW201517132A (zh) 2015-05-01

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