JP6450372B2 - イオン注入装置のＳｉＣコーティング - Google Patents

イオン注入装置のＳｉＣコーティング Download PDF

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Publication number
JP6450372B2
JP6450372B2 JP2016516865A JP2016516865A JP6450372B2 JP 6450372 B2 JP6450372 B2 JP 6450372B2 JP 2016516865 A JP2016516865 A JP 2016516865A JP 2016516865 A JP2016516865 A JP 2016516865A JP 6450372 B2 JP6450372 B2 JP 6450372B2
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Prior art keywords
conductive
wall
silicon carbide
low resistivity
ion source
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Japanese (ja)
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JP2016540110A (ja
JP2016540110A5 (https=
Inventor
ジェイ メイソン ロバート
ジェイ メイソン ロバート
パテル シャルダル
パテル シャルダル
エイチ ベッテンコート ロバート
エイチ ベッテンコート ロバート
ジェイ ミラー ティモシー
ジェイ ミラー ティモシー
Original Assignee
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/083—Beam forming

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2016516865A 2013-09-27 2014-09-24 イオン注入装置のＳｉＣコーティング Active JP6450372B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/039,654 US9384937B2 (en) 2013-09-27 2013-09-27 SiC coating in an ion implanter
US14/039,654 2013-09-27
PCT/US2014/057201 WO2015048122A1 (en) 2013-09-27 2014-09-24 SiC COATING IN AN ION IMPLANTER

Publications (3)

Publication Number Publication Date
JP2016540110A JP2016540110A (ja) 2016-12-22
JP2016540110A5 JP2016540110A5 (https=) 2017-09-21
JP6450372B2 true JP6450372B2 (ja) 2019-01-09

Family

ID=52739156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016516865A Active JP6450372B2 (ja) 2013-09-27 2014-09-24 イオン注入装置のＳｉＣコーティング

Country Status (6)

Country Link
US (2) US9384937B2 (https=)
JP (1) JP6450372B2 (https=)
KR (1) KR101967238B1 (https=)
CN (1) CN105593401B (https=)
TW (1) TWI673776B (https=)
WO (1) WO2015048122A1 (https=)

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US9384937B2 (en) 2013-09-27 2016-07-05 Varian Semiconductor Equipment Associates, Inc. SiC coating in an ion implanter
US9543110B2 (en) * 2013-12-20 2017-01-10 Axcelis Technologies, Inc. Reduced trace metals contamination ion source for an ion implantation system
JP6539414B2 (ja) * 2015-07-07 2019-07-03 バリュー エンジニアリング リミテッドＶａｌｕｅ Ｅｎｇｉｎｅｅｒｉｎｇ，Ｌｔｄ． イオン注入器用リペラー、カソード、チャンバーウォール、スリット部材、及びこれを含むイオン発生装置
US10460941B2 (en) * 2016-11-08 2019-10-29 Varian Semiconductor Equipment Associates, Inc. Plasma doping using a solid dopant source
US9934933B1 (en) * 2017-01-19 2018-04-03 Kla-Tencor Corporation Extractor electrode for electron source
US10276340B1 (en) * 2017-12-20 2019-04-30 Varian Semiconductor Equipment Associates, Inc. Low particle capacitively coupled components for workpiece processing
CN113261073B (zh) * 2018-12-15 2024-07-16 恩特格里斯公司 利用非钨材料的氟离子植入系统和其使用方法
US12033843B2 (en) * 2020-03-26 2024-07-09 Agilent Technologies, Inc. Mass spectrometry ION source
WO2023139532A1 (en) * 2022-01-21 2023-07-27 Cisterni Marco Ion source
US12431338B2 (en) 2023-11-03 2025-09-30 Applied Materials, Inc. Composite structures for semiconductor process chambers

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WO1993018201A1 (en) 1992-03-02 1993-09-16 Varian Associates, Inc. Plasma implantation process and equipment
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JPH09259779A (ja) * 1996-03-15 1997-10-03 Nissin Electric Co Ltd イオン源およびそれを用いたイオン注入装置
US6090733A (en) 1997-08-27 2000-07-18 Bridgestone Corporation Sintered silicon carbide and method for producing the same
US6331713B1 (en) 1999-10-06 2001-12-18 Applied Materials, Inc. Movable ion source assembly
US7018947B2 (en) * 2000-02-24 2006-03-28 Shipley Company, L.L.C. Low resistivity silicon carbide
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US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
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FR2871934B1 (fr) * 2004-06-16 2006-09-22 Ion Beam Services Sa Alimentation d'implanteur ionique prevue pour une limitation de l'effet de charge
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US9384937B2 (en) 2013-09-27 2016-07-05 Varian Semiconductor Equipment Associates, Inc. SiC coating in an ion implanter

Also Published As

Publication number Publication date
KR101967238B1 (ko) 2019-04-09
TWI673776B (zh) 2019-10-01
US9793086B2 (en) 2017-10-17
US20160293378A1 (en) 2016-10-06
US20150090897A1 (en) 2015-04-02
KR20160064147A (ko) 2016-06-07
US9384937B2 (en) 2016-07-05
CN105593401B (zh) 2017-10-27
WO2015048122A1 (en) 2015-04-02
JP2016540110A (ja) 2016-12-22
CN105593401A (zh) 2016-05-18
TW201517132A (zh) 2015-05-01

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