JP6450372B2 - イオン注入装置のSiCコーティング - Google Patents
イオン注入装置のSiCコーティング Download PDFInfo
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- JP6450372B2 JP6450372B2 JP2016516865A JP2016516865A JP6450372B2 JP 6450372 B2 JP6450372 B2 JP 6450372B2 JP 2016516865 A JP2016516865 A JP 2016516865A JP 2016516865 A JP2016516865 A JP 2016516865A JP 6450372 B2 JP6450372 B2 JP 6450372B2
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- conductive
- wall
- silicon carbide
- low resistivity
- ion source
- Prior art date
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- 239000011248 coating agent Substances 0.000 title claims description 7
- 238000000576 coating method Methods 0.000 title claims description 7
- 150000002500 ions Chemical class 0.000 claims description 95
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 52
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 52
- 238000000605 extraction Methods 0.000 claims description 42
- 238000005468 ion implantation Methods 0.000 claims description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- 229910002804 graphite Inorganic materials 0.000 description 12
- 239000010439 graphite Substances 0.000 description 12
- 238000010884 ion-beam technique Methods 0.000 description 11
- 239000000356 contaminant Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000001629 suppression Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- -1 carbon ions Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/12—Lenses electrostatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/061—Construction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/083—Beam forming
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Description
Claims (14)
- 第1壁、前記第1壁に対向する導電性の第2壁、及び複数個の導電性側壁を持ち、抽出開孔を前記導電性の第2壁に配置するイオン源チャンバを有するイオン源と、
各々が前記導電性側壁のそれぞれに対応する内部表面に当接配置して電気的に連通する複数の導電性内張りと、
を備え、
前記導電性の第2壁、及び前記複数個の導電性側壁は、第1のバイアス電圧で連通し、
少なくとも1個の前記導電性内張りを低抵抗率炭化ケイ素で被覆する、イオン注入装置。 - 前記低抵抗率炭化ケイ素は1Ωcm未満の抵抗率を有する、請求項1記載のイオン注入装置。
- 前記導電性の第2壁の内部表面を前記低抵抗率炭化ケイ素で被覆する、請求項1記載のイオン注入装置。
- 前記抽出開孔近傍で前記イオン源チャンバの外側に配置し、1個又は複数個の導電性電極を有し、前記導電性電極は、1つ又は複数の第2のバイアス電圧で連通し、前記イオン源チャンバからのイオンを前記抽出開孔を通って引き付ける抽出電極アセンブリを更に備え、
前記1個又は複数個の導電性電極の表面を前記低抵抗率炭化ケイ素で被覆する、請求項1記載のイオン注入装置。 - 前記1個又は複数個の導電性電極の各々はそれぞれに対応する開孔を有し、前記1個又は複数個の導電性電極の内の少なくとも1個における前記対応する開孔の包囲部分を前記低抵抗率炭化ケイ素で被覆する、請求項4記載のイオン注入装置。
- 第1壁、前記第1壁に対向する導電性の第2壁、及び複数個の導電性側壁を持ち、抽出開孔を前記導電性の第2壁に配置するイオン源チャンバを有するイオン源と、
前記抽出開孔近傍で前記イオン源チャンバの外側に配置し、1個又は複数個の導電性電極を有する抽出電極アセンブリと、
を備え、
前記導電性の第2壁、及び前記複数個の導電性側壁は、第1のバイアス電圧で連通し、前記1個又は複数個の導電性電極は、1つ又は複数の第2のバイアス電圧で連通し、前記第1のバイアス電圧と前記第2のバイアス電圧との間の電圧の差は、前記イオン源チャンバからの正イオンを前記抽出開孔を通って引き付けるのに役立ち、
前記導電性の第2壁の内部表面、前記複数個の導電性側壁の内の1個の内部表面、及び前記抽出電極アセンブリの内の少なくとも1個を、低抵抗率炭化ケイ素で被覆し、
前記低抵抗率炭化ケイ素は1Ωcm未満の抵抗率を有する、イオン注入装置。 - 各々が前記複数個の導電性側壁のそれぞれに対応する内部表面に当接配置して電気的に連通する複数の導電性内張りを、さらに備える、請求項6記載のイオン注入装置。
- 前記複数の導電性内張りの各々は、前記イオン源チャンバの内部に対面する第1表面、及び前記第1表面とは反対側でそれぞれに対応する導電性側壁に対面する第2表面を有し、前記第1表面を低抵抗率炭化ケイ素で被覆する、請求項7記載のイオン注入装置。
- 前記導電性の第2壁の前記内部表面を前記低抵抗率炭化ケイ素で被覆する、請求項6記載のイオン注入装置。
- 前記1個又は複数個の導電性電極の表面を前記低抵抗率炭化ケイ素で被覆する、請求項6記載のイオン注入装置。
- 前記1個又は複数個の導電性電極の各々はそれぞれに対応する開孔を有し、前記1個又は複数個の導電性電極の内の少なくとも1個における前記対応する開孔の包囲部分を前記低抵抗率炭化ケイ素で被覆する、請求項10記載のイオン注入装置。
- 第1壁、前記第1壁に対向する導電性の第2壁、及び複数個の導電性側壁を持ち、抽出開孔を前記導電性の第2壁に配置するイオン源チャンバを有するイオン源と、
各々が前記導電性側壁のそれぞれに対応する内部表面に当接配置して電気的に導通する複数の導電性内張りであり、前記複数の導電性内張りの各々は、前記イオン源チャンバの内部に対面する第1表面、及び前記第1表面とは反対側でそれぞれに対応する導電性側壁に対面する第2表面を有し、前記第1表面を低抵抗率炭化ケイ素で被覆する、複数の導電性内張りと、
前記抽出開孔近傍で前記イオン源チャンバの外側に配置する抽出電極アセンブリであり、1個又は複数個の導電性電極を有し、前記導電性電極の各々はそれぞれに対応する開孔を有し、前記1個又は複数個の導電性電極の内の少なくとも1個における前記対応する開孔の包囲部分を低抵抗率炭化ケイ素で被覆する、抽出電極アセンブリと、
を備え、
前記低抵抗率炭化ケイ素は1Ωcm未満の抵抗率を有し、
前記導電性側壁は、第1のバイアス電圧で連通し、前記1個又は複数個の導電性電極は、1つ又は複数の第2のバイアス電圧で連通し、前記イオン源チャンバからのイオンを前記抽出開孔を通って引き付ける、イオン注入装置。 - 前記導電性の第2壁の内部表面を前記低抵抗率炭化ケイ素で被覆する、請求項12記載のイオン注入装置。
- 前記導電性の第2壁と前記導電性側壁とを取り付ける領域は、前記低抵抗率炭化ケイ素で被覆しない、請求項13記載のイオン注入装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/039,654 US9384937B2 (en) | 2013-09-27 | 2013-09-27 | SiC coating in an ion implanter |
US14/039,654 | 2013-09-27 | ||
PCT/US2014/057201 WO2015048122A1 (en) | 2013-09-27 | 2014-09-24 | SiC COATING IN AN ION IMPLANTER |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016540110A JP2016540110A (ja) | 2016-12-22 |
JP2016540110A5 JP2016540110A5 (ja) | 2017-09-21 |
JP6450372B2 true JP6450372B2 (ja) | 2019-01-09 |
Family
ID=52739156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016516865A Active JP6450372B2 (ja) | 2013-09-27 | 2014-09-24 | イオン注入装置のSiCコーティング |
Country Status (6)
Country | Link |
---|---|
US (2) | US9384937B2 (ja) |
JP (1) | JP6450372B2 (ja) |
KR (1) | KR101967238B1 (ja) |
CN (1) | CN105593401B (ja) |
TW (1) | TWI673776B (ja) |
WO (1) | WO2015048122A1 (ja) |
Families Citing this family (8)
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US9384937B2 (en) | 2013-09-27 | 2016-07-05 | Varian Semiconductor Equipment Associates, Inc. | SiC coating in an ion implanter |
US9543110B2 (en) * | 2013-12-20 | 2017-01-10 | Axcelis Technologies, Inc. | Reduced trace metals contamination ion source for an ion implantation system |
WO2017007138A1 (ko) * | 2015-07-07 | 2017-01-12 | 주식회사 밸류엔지니어링 | 이온주입기용 리펠러, 캐소드, 챔버 월, 슬릿 부재 및 이를 포함하는 이온발생장치 |
US10460941B2 (en) * | 2016-11-08 | 2019-10-29 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping using a solid dopant source |
US9934933B1 (en) * | 2017-01-19 | 2018-04-03 | Kla-Tencor Corporation | Extractor electrode for electron source |
US10276340B1 (en) | 2017-12-20 | 2019-04-30 | Varian Semiconductor Equipment Associates, Inc. | Low particle capacitively coupled components for workpiece processing |
KR102642616B1 (ko) * | 2018-12-15 | 2024-03-05 | 엔테그리스, 아이엔씨. | 불소 이온 주입 방법 및 시스템 |
WO2023139532A1 (en) * | 2022-01-21 | 2023-07-27 | Cisterni Marco | Ion source |
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-
2013
- 2013-09-27 US US14/039,654 patent/US9384937B2/en active Active
-
2014
- 2014-09-17 TW TW103132000A patent/TWI673776B/zh active
- 2014-09-24 CN CN201480053311.2A patent/CN105593401B/zh active Active
- 2014-09-24 KR KR1020167010646A patent/KR101967238B1/ko active IP Right Grant
- 2014-09-24 JP JP2016516865A patent/JP6450372B2/ja active Active
- 2014-09-24 WO PCT/US2014/057201 patent/WO2015048122A1/en active Application Filing
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2016
- 2016-06-07 US US15/175,501 patent/US9793086B2/en active Active
Also Published As
Publication number | Publication date |
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US9793086B2 (en) | 2017-10-17 |
US20160293378A1 (en) | 2016-10-06 |
TWI673776B (zh) | 2019-10-01 |
WO2015048122A1 (en) | 2015-04-02 |
KR101967238B1 (ko) | 2019-04-09 |
CN105593401A (zh) | 2016-05-18 |
US20150090897A1 (en) | 2015-04-02 |
TW201517132A (zh) | 2015-05-01 |
KR20160064147A (ko) | 2016-06-07 |
JP2016540110A (ja) | 2016-12-22 |
CN105593401B (zh) | 2017-10-27 |
US9384937B2 (en) | 2016-07-05 |
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