200949891 六、發明說明： 【發明所屬么技術々貝域3 _ 發明領域200949891 VI. Description of the invention: [Technology of the invention] Mussel domain 3 _ Field of invention
• 本發明係關於一種離子植入裝置及一種用以製造診I 5 置之方法，且較特定地，關於一種包含鎢塗覆部件，諸^ 形成一源頭組件中一電弧箱之一箱體的—底板、側及端 板，及一頂板，及一操縱器組件的一抑制電極之離子植入 裝置，及一種用於製造該裝置的方法。 Ο• The present invention relates to an ion implantation apparatus and a method for fabricating a medical device, and more particularly to a container comprising a tungsten coated component that forms a box of an arc box in a source assembly - a bottom plate, side and end plates, and a top plate, and an ion implantation device for suppressing electrodes of a manipulator assembly, and a method for manufacturing the device. Ο
L· U 10 發明背景 ‘ 在身為製造一半導體裝置的多個程序之一的一典型離 ‘ 子植入程序中，P型雜質諸如硼(B)、鋁(A1)，及銦（In)，與 N型雜質諸如録(Sb)、璘(P)、及石申(As)被轉變為一電漿離子 束，且這些雜質被植入一純半導體基板，例如一矽（Si)基 15 板，以產生植入區中所希望的傳導性及電阻率等級。該離 〇 子植入程序具有優勢是因為簡單地控制植入該基板中的雜 質濃度是可能的，且將一所希望的離子以一所希望的量及 %度植入該基板之表面是可能的。 一種執行離子植入程序的離子植入裝置包括產生一離 20子束的一源頭組件及抽取該離子束的一操縱器組件。在源 頭組件中產生該離子束的—空間稱為一電弧箱。 在該電弧箱中’一反應氣體（來源氣體)被迫與由一燈絲 發出的熱電子碰撞以使一中性狀態反應氣體失去電子，因 此產生正離子。即’當一離子區使用該離子植入裝置在該 3 200949891 半導體基板上形成時，由注入電弧箱的反應氣體與從燈絲 發射的熱電子之間的碰撞產生的電離氣體被植入該半導體 基板，藉此形成該離子區。 該電弧箱包括一中空箱體，該空心箱體具有一進氣口 5 設於其一個表面上、一陰極安裝於該箱體中且具有一發射 熱電子的燈絲，及一反射極安裝成面對該陰極且反射(排斥） 從該燈絲透過該陰極的一端蓋發射的熱電子。 因此，當來源氣體透過進氣口被注入該箱體時，該來 源氣體與從該陰極的燈絲發射的熱電子碰撞，且快速地向 10 該反射極移動，由該反射極反射的熱電子被電離，且電離 氣體轉換為一離子束且被排出至外部。 同時，因為在電離期間所包含的金屬組件可導致一基 板型樣上的短路及該離子植入裝置中的各種程序事故，鎢 加工部件根據溫度、穩定原子結構被廣泛地用於離子植入 15 裝置中而沒有污染物及類似物。 第1圖繪示一電弧箱100在一離子植入裝置中產生離 子，其中相關參考數字11至13表示形成一箱體10的壁板， 參考數字30表示一反射極，且參考數字15表示一狹縫，一 離子束通過該狹縫。 20 在電弧箱100中，一燈絲（未示於圖中）產生且注入熱電 子到箱體10中，使得該等熱電子與在箱體10中的一反應氣 體反應以產生一電漿。 即，被發射進箱體10的該等熱電子撞擊反應氣體的分 子以產生一離子電漿，且因此離子電漿形式的離子形成一 200949891 5 ❹ 10 15Ο 離子束，該離子束通過狹缝15被排出至外部。 上述電弧箱的組件主要由鎢形成。特別是其中有—程 序在由於高電壓產生高温熱量的不利條件下被執行的鶴形 成箱體。另外，因為該電弧箱的溫度在電離期間上升至 900°C，鎢被廣泛使用作為一耐高溫且在電離期間不被電離 的材料。 業界習知鎢是一種啟動一電離大氣且提供一高溫環境 的理想材料。另外，藉由鎢的使用，阻止由於周邊部件的 電離產生不需要的離子的問題且防止與該問題相關聯的處 理問題是可能的。 然而，鎢具有高製造成本及重量重、壽命短，且在數 次使用後難以重複使用鎢的劣勢。 另外，鎢磨損發生於電離在該電弧箱所佔據的區域， 因為離子束撞擊由鶴製作的箱體内壁而被損壞，定期檢查 及更換是需要的。 如此，維護成本因為該有限的壽命及定期更換操作增 加，且在使鎢組件的形狀多樣化中導致一很高的成本。另 外，因為鎢難以加工 當大的困難。 故製造具有一希求形狀之箱體有相 20 、爲了解決各種問題諸如在使用鎮製造該箱體中導致的 成本’整個部件並不由糾作，取而代之，歧地使用〆 ^術使用—相對易於加工的指定金屬基質形成一希爹的 形狀，且接著以鎢塗覆對應於該箱體内表面的金屬基質表 5 200949891 然而，在該箱體的内部溫度升高至900°C且離子持續撞 擊該箱體内壁的的條件下，非常不利於驅散使用一昂貴的 金屬基質形成的箱體中的熱量，且雜質被容易納入該導電 金屬基質的表面使得該箱體之内壁被污染或被挖空。特別 5 是，當被過度加熱時，内部材料達到最上限，且因此對應 部件可能被損壞。 另外，因為當使用金屬基質時，該箱本身的重量被增 加，重量及熱量可導致離子束排至外部所通過的狹縫變 形，這改變該狹縫的離子發射位置且使整個裝置變形，使 10 得難以保證一精確的離子植入程序。 【發明内容3 發明概要 本發明被提出以試圖解決上述與習知技術相關聯的問 題。因此，本發明提供一種包括鎢塗覆部件，諸如形成一 15 源頭組件中一電弧箱之一箱體的一底板、側及端板，及一 頂板，及一操縱器組件的一抑制電極的離子植入裝置，及 一種用於製造該裝置的方法。依據本發明，各該鎢塗覆部 件透過使用易於加工、重量輕，且不貴的一石墨基質形成 一所希望形狀，且用鎢塗覆該石墨基質的表面而被製造， 20 藉此利於製造程序。因此改進部件設計之自由度且減少製 造成本及重量是可能的。 在一個層面，本發明提供一種具有鎢塗覆部件的離子 植入裝置，該裝置包含一用於產生一離子束的源頭組件及 一操縱器組件，其中該源頭組件包括由一底板、一側板， 200949891 及一頂板組成的一電弧箱，產生一離子束的空間由該等板 界定，各該底板、側板及頂板由一碳材料的一基質及一層 壓在各板之内表面，該基質上的一鎢塗覆層組成。 .該操縱器組件的一抑制電極可由一碳材料作為一基質 5 形成，且一鎢塗覆層形成於形成該抑制電極的碳基質的表 面上。 該碳材料可以是石墨。 該鎢塗覆層可以100至1 ,ΟΟΟμιη範圍的厚度形成於該基 質的表面上。 10 該鎢塗覆層可以150至450μιη範圍的厚度形成於該基 質的表面上。 在另一層面，本發明提供一種產生包含鎢塗覆部件的 一離子植入裝置的方法，該等鎢塗覆部件包括產生一離子 束的一源頭組件及一操縱器組件，其中在製造包括一底板、 15 側及端板，及一頂板的一電弧箱的箱體中，其中該離子束 0 產生於該源頭組件，各該板藉由使用一碳材料作為基質形 成一所希望的形狀及用鎢塗覆對應於各板的内表面的碳基 質之表面被製造。 該操縱器組件的一抑制電極可藉由使用一碳材料作為 20 —基質形成一所希望的形狀且用鎢塗覆碳基質的表面被製 造。 該碳材料可以是石墨。 鎢可以100至Ι,ΟΟΟμιη範圍的厚度被塗覆於該基質的表 面上。 7 200949891 鎢可以150至450μιη範圍的厚度被塗覆於該基質的表 面上。 鎢可透過一電漿喷塗塗覆程序被塗覆於該基質的表面 上。 5 應理解本發明的上文概要及下文詳細描述關於僅爲了 進一步理解所主張的發明的示範性實施例。 圖式簡單說明 本發明之上述及其他物件、特徵及優勢將參考附圖從 下文本發明之實施例詳細的描述變得較為明顯，在該地附 !〇 圖中： 第1圖是繪示一離子植入裝置中產生離子的一源頭組 件的一電弧箱之圖式； 第2圖是繪示依據本發明之一示範性實施例形成一離 15子植入裝置中的一電弧箱的一箱體的壁板的截面視圖；及 第3圖疋繪示依據本發明之一示範性實施例在該離子 植入裝置中的—操縱器的—分解視圖。 【貧施方式】 較佳實施例之詳細說明 20 本發明現在將在下文中參考料附圖被較全面地描 2本發月之不|巳性實施例緣示於該等附圖中。然而，本 月可以衫不同形式被實現且不應被解釋為被限制於本 =閣明的該等示範性實施例。凡有元件出現於該等圖式 或在該朗書被提到，它們都由相同的參考數字表示。 第2圖疋綠示依據本發明之—示範性實施例形成一離 200949891 . 子植入裝置中的一電弧箱的一箱體的壁板的截面視圖。 本發明目的是提供一種離子植入裝置及一種用以製造 該裝置之方法，其中諸如形成一源頭組件中的一電弧箱的 . 一箱體的一底板、側及端板，及一頂板，及一操縱器組件 5 的一抑制電極的組件相較于由鶴形成的一習知離子植入裝 置的由一破材料作為一基質形成。 習知地，在離子植入裝置中包括箱體的電弧箱之組件 由重量重、昂貴且難以加工的鎢形成，或者各該組件透過 使用比鎢輕且易於加工的一特定金屬基質形成一所希望的 10 形狀，且用鎢塗覆該金屬基質表面被製造。然而，在本發 明中，各該組件透過使用重量輕、不貴、易於加工，且能 夠克服習知金屬材料的劣勢的一碳材料作為一基質形成一 所希望的形狀，且用鎢塗覆該碳基質的表面被製造。 在此情況中，用鎢塗覆的區域對應於該基質的表面， 15 例如，該箱體的内表面。 A 回參第1圖，電弧箱100的箱體10包含底板12、側及端 板11，及具有狹縫15的頂板13，它們形成離子束被產生的 空間。 在本發明中，如第2圖所示，形成箱體10的板11至13的 20 内表面被用鎢塗覆以形成一鎢塗覆層B。在此情況中，易於 加工的一碳材料被用作一基質A，其形成各該板11至13的形 狀，且鎢塗覆層B形成於該基質A之上。 另外，操縱器組件的抑制電極同樣由一碳材料作為一 基質形成，且該基質之表面用鎢塗覆。這裡，該基質之結 9 200949891 構及鎢塗覆層與第2圖的相同。 5 10 第3圖是繪示依據本發明之一系範性實施例在該離子 植入裝置中的-操縱H2GG的-分解透視圖，其情示透過 用鎢塗覆該碳材料而被製造的的抑制電極21G。參考數字 220表示操縱器200的一接地電極。 在本發明的較佳實施例中，易於加工，且在就強度、 耐腐蝕性及耐熱性、重量，及成本而言有優勢的石墨而不 是習知的鎢材料被用作該碳材料用於該箱體的各板及該操 縱器組件的抑制電極。 形成箱體10的各該底板12、侧及端板11，及頂板13使 用—石墨基質形成一適當的形狀，真該石墨基質的表面由 鎢塗覆至—預定厚度。接著，鎢塗覆板11至13被組合形成 箱體10。該基質之表面由鎢塗覆的原因是當該箱體僅由碳 形成時所產生的離子數量被減少。 如此，在本發明中，依據製造電弧箱的箱體及操縱器 組件的抑制電極的程序之特徵，易於加工的石墨材料被用 作基質A且鎢塗覆層B形成於該基質A之表面上。因此，相 較於對應的部件由鎢或任一其他金屬基質形成的習知方法 減少製造成本、利於加工，且減少重量是可能的。 在本發明中，已被使用的一鎢基質可作為鎢塗覆材料 破重新使用。β卩，祕形成且被用於離子植人裝置的鹤基 或依據損害度被更換’且被更換的: 質ΊΓ作為鎢塗覆材料被重新使用。 另外，在本發明中，鎢較佳 地藉由一電漿喷塗塗覆程 20 200949891 序被直接塗覆於石墨基質表面上。 在此情況中’鎢塗覆層具有較佳地在範圍100至 1，000μιη的一厚度。當厚度小於1〇〇μιη時，被塗覆表面可能 被離子束損壞以減少壽命(在該電弧箱、該表面可能在離子 5 束輻射期間被挖空的情況中）。當厚度超過ΙΟΟΟμιη時，鎢 塗覆層可能易於從該基質剝落，且所塗覆鎢的量被增加’ 這導致製造成本的增加。因此’該鎢塗覆層之厚度較佳地 在範圍150至450μπι中。 另外，收集且再循環鎢所形成且已藉由透過電漿喷塗 10 塗覆程序用鎢塗覆其表面被使用的鎢基質是可能的。即， 當該鎢基質的挖空部份被用鎢塗覆時，再循環對應的鎢基 質（以該鎢基質的結構及鎢塗覆層）是可能的。在此情況中， 因為鎢基質的循環，防止鎢基質的浪費是可能的，該鎢基 質除了因離子產生損壞的部份也包括未損壞的部份，且因 15 此有利於該裝置的操作且減少成本是可能的。 如上所述，依據本發明的離子植入裝置及用於製造該 裝置的方法，各該鎢塗覆部件，諸如形成源頭組件中電弧 箱的箱體的底板、側及端板，及頂板，以及一操縱器組件 的抑制電極透過使用易於加工、重量輕且不貴的一石墨基 20 質形成—所希望的形狀，且用鎢塗覆該石墨基質的表面被 製造。因此，改進部件設計的自由度及減少製造成本及重 量是可能的。 另外，因為被用作基質材料的石墨具有優秀的散熱效 果且當該等離子與石墨碰撞時吸收一部份離子，該石墨基 11 200949891 質的表面較少被挖空。因此，延長更換期且減少維護成本 是可能的。 另外，因為耐熱且具有優良強度的石墨基質被用於包 括鎢塗覆部件的離子植入裝置，沒有由重量及熱量所導致 5 的變形（防止部件的變形及該整個裝置的變形），因此確保一 精確的程序。 雖然本發明之示範性實施例已被詳細地繪示及描述， 該技藝中具有通常知識者將理解在不違背所附申請專利範 圍及其等效物所界定的本發明之精神及範圍下可作成該等 10 示範性實施例的各種改變。 【圖式簡單說明3 第1圖是繪示一離子植入裝置中產生離子的一源頭組 件的一電弧箱之圖式； 第2圖是繪示依據本發明之一示範性實施例形成一離 15 子植入裝置中的一電弧箱的一箱體的壁板的截面視圖；及 第3圖是繪示依據本發明之一示範性實施例在該離子 植入裝置中的一操縱器的一分解視圖。 【主要元件符號說明】 10…箱體 100…電弧箱 11…側及端板 200…操縱器 12…底板 210…抑制電極 13…頂板 220…接地電極 15…狹縫 A…基質 30···反射極 B…鶴塗覆層 12L·U 10 BACKGROUND OF THE INVENTION P-type impurities such as boron (B), aluminum (A1), and indium (In) in a typical ion implantation process which is one of a plurality of programs for fabricating a semiconductor device , and N-type impurities such as Sb, 璘 (P), and Ashen are converted into a plasma ion beam, and these impurities are implanted into a pure semiconductor substrate, such as a bismuth (Si) group 15 The plates are used to create the desired conductivity and resistivity levels in the implanted area. The dice implant procedure has the advantage that it is possible to simply control the concentration of impurities implanted in the substrate, and it is possible to implant a desired ion onto the surface of the substrate in a desired amount and %. of. An ion implantation apparatus for performing an ion implantation process includes a source assembly that produces a beam of 20 beams and a manipulator assembly that extracts the ion beam. The space in which the ion beam is generated in the source assembly is referred to as an arc box. In the arc tank, a reaction gas (source gas) is forced to collide with hot electrons emitted from a filament to cause a neutral state reaction gas to lose electrons, thereby generating positive ions. That is, when an ion implantation region is formed on the 3 200949891 semiconductor substrate using the ion implantation device, an ionized gas generated by a collision between a reaction gas injected into the arc tank and hot electrons emitted from the filament is implanted into the semiconductor substrate. Thereby, the ion region is formed. The arc box comprises a hollow box body having an air inlet 5 disposed on one surface thereof, a cathode mounted in the box body and having a filament for emitting hot electrons, and a reflector pole mounted to the surface The cathode is reflected and repels (hotsed) hot electrons emitted from the filament through the end cap of the cathode. Therefore, when the source gas is injected into the tank through the gas inlet, the source gas collides with the hot electrons emitted from the filament of the cathode, and rapidly moves toward the reflector, and the hot electrons reflected by the reflector are Ionized, and the ionized gas is converted into an ion beam and discharged to the outside. At the same time, since the metal component contained during ionization can cause short circuit on a substrate pattern and various program accidents in the ion implantation apparatus, the tungsten processing part is widely used for ion implantation according to temperature and stable atomic structure. There are no contaminants and the like in the device. 1 shows an arc box 100 generating ions in an ion implantation apparatus, wherein reference numerals 11 to 13 denote walls forming a case 10, reference numeral 30 denotes a reflection pole, and reference numeral 15 denotes a A slit through which an ion beam passes. In the arc tank 100, a filament (not shown) is generated and injected with thermoelectric electrons into the tank 10 such that the hot electrons react with a reactive gas in the tank 10 to produce a plasma. That is, the hot electrons emitted into the tank 10 strike the molecules of the reactive gas to produce an ion plasma, and thus the ions in the form of ion plasma form a 200949891 5 ❹ 10 15 离子 ion beam that passes through the slit 15 It is discharged to the outside. The components of the above arc box are mainly formed of tungsten. In particular, there is a crane-like case in which the program is executed under adverse conditions in which high-temperature heat is generated due to a high voltage. In addition, since the temperature of the arc box rises to 900 °C during ionization, tungsten is widely used as a material which is resistant to high temperatures and is not ionized during ionization. Tungsten is an ideal material for starting an ionized atmosphere and providing a high temperature environment. In addition, by the use of tungsten, it is possible to prevent the problem of unwanted ions from being generated by ionization of peripheral components and to prevent processing problems associated with the problem. However, tungsten has a disadvantage of high manufacturing cost and heavy weight, short life, and difficulty in reusing tungsten after several uses. In addition, tungsten wear occurs in the area occupied by the arc box, and the ion beam is damaged by impacting the inner wall of the tank made of cranes, and regular inspection and replacement are required. As such, maintenance costs increase due to the limited life and periodic replacement operations, and result in a high cost in diversifying the shape of the tungsten component. In addition, because tungsten is difficult to process, it is a big difficulty. Therefore, the manufacture of a box having a desired shape has a phase 20, in order to solve various problems such as the cost caused by the use of the town to manufacture the cabinet, the whole component is not corrected, and instead, it is used in a relatively easy manner. The specified metal matrix forms a desired shape, and then the metal substrate corresponding to the inner surface of the case is coated with tungsten. Table 5 200949891 However, the internal temperature of the case rises to 900 ° C and the ions continue to strike. Under the conditions of the inner wall of the tank, it is highly disadvantageous to dissipate the heat in the tank formed using an expensive metal matrix, and the impurities are easily incorporated into the surface of the conductive metal substrate such that the inner wall of the tank is contaminated or hollowed out. In particular, when the material is overheated, the internal material reaches the upper limit, and accordingly the corresponding part may be damaged. In addition, because when the metal substrate is used, the weight of the box itself is increased, and the weight and heat can cause the slit of the ion beam to be discharged to the outside to be deformed, which changes the ion emission position of the slit and deforms the entire device. 10 It is difficult to guarantee a precise ion implantation procedure. SUMMARY OF THE INVENTION The present invention has been made in an effort to solve the above problems associated with the prior art. Accordingly, the present invention provides a substrate, a side plate, an end plate, and a top plate, and a suppressor electrode of a manipulator assembly, including a tungsten coated member, such as a case forming one of the arc boxes in a source assembly. An implant device, and a method for making the device. According to the present invention, each of the tungsten-coated members is formed by forming a desired shape using a graphite substrate which is easy to process, light in weight, and inexpensive, and coating the surface of the graphite substrate with tungsten, thereby facilitating manufacture. program. Therefore, it is possible to improve the degree of freedom in component design and to reduce the manufacturing cost and weight. In one aspect, the present invention provides an ion implantation apparatus having a tungsten coated component, the apparatus comprising a source assembly for generating an ion beam and a manipulator assembly, wherein the source assembly comprises a bottom plate, a side plate, 200949891 and an arc box composed of a top plate, a space for generating an ion beam is defined by the plates, each of the bottom plate, the side plate and the top plate being laminated by a substrate of a carbon material and an inner surface of each plate on the substrate A tungsten coating layer composition. A suppressing electrode of the manipulator assembly may be formed of a carbon material as a matrix 5, and a tungsten coating layer is formed on the surface of the carbon substrate forming the suppressing electrode. The carbon material may be graphite. The tungsten coating layer may be formed on the surface of the substrate in a thickness ranging from 100 to 1, ΟΟΟμηη. 10 The tungsten coating layer may be formed on the surface of the substrate in a thickness ranging from 150 to 450 μm. In another aspect, the present invention provides a method of producing an ion implantation apparatus comprising a tungsten coated component, the tungsten coated component comprising a source assembly that produces an ion beam and a manipulator assembly, wherein the manufacturing comprises a a bottom plate, a 15 side and an end plate, and a case of an arc box of a top plate, wherein the ion beam 0 is generated from the source assembly, each plate forming a desired shape by using a carbon material as a substrate Tungsten is applied to the surface of the carbon substrate corresponding to the inner surface of each of the plates. A suppressor electrode of the manipulator assembly can be fabricated by using a carbon material as the substrate to form a desired shape and coating the surface of the carbon substrate with tungsten. The carbon material may be graphite. Tungsten may be applied to the surface of the substrate in a thickness ranging from 100 to Ι, ΟΟΟμηη. 7 200949891 Tungsten may be applied to the surface of the substrate in a thickness ranging from 150 to 450 μm. Tungsten can be applied to the surface of the substrate by a plasma spray coating procedure. The above summary of the present invention and the following detailed description of the invention are intended to provide a BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will become more apparent from the detailed description of embodiments of A diagram of an arc box of a source assembly for generating ions in an ion implantation apparatus; and FIG. 2 is a diagram showing a box for forming an arc box in a 15 sub-implant apparatus according to an exemplary embodiment of the present invention A cross-sectional view of a body panel; and FIG. 3 illustrates an exploded view of the manipulator in the ion implantation apparatus in accordance with an exemplary embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described more fully hereinafter with reference to the accompanying drawings in which: FIG. However, this month may be implemented in different forms and should not be construed as being limited to such exemplary embodiments. Where elements appear in the drawings or are referred to in the book, they are denoted by the same reference numerals. Figure 2 is a cross-sectional view of a wall of a box of an arc box in a sub-implant device in accordance with an exemplary embodiment of the present invention. SUMMARY OF THE INVENTION It is an object of the present invention to provide an ion implantation apparatus and a method for fabricating the same, such as a bottom plate, side and end plates of a case, and a top plate, and an arc box formed in a source assembly, and A suppressor electrode assembly of a manipulator assembly 5 is formed from a broken material as a matrix as compared to a conventional ion implant device formed by a crane. Conventionally, an assembly of an arc box including a tank in an ion implantation apparatus is formed of heavy, expensive, and difficult to process tungsten, or each of the components is formed by using a specific metal matrix that is lighter than tungsten and easy to process. The desired 10 shape and the surface of the metal substrate coated with tungsten are fabricated. However, in the present invention, each of the components is formed into a desired shape by using a carbon material which is light in weight, inexpensive, easy to process, and capable of overcoming the disadvantages of the conventional metal materials, and is coated with tungsten. The surface of the carbon substrate is fabricated. In this case, the area coated with tungsten corresponds to the surface of the substrate, 15 for example, the inner surface of the case. A Referring back to Fig. 1, the casing 10 of the arc tank 100 includes a bottom plate 12, side and end plates 11, and a top plate 13 having slits 15, which form a space in which an ion beam is generated. In the present invention, as shown in Fig. 2, the inner surfaces of the plates 11 to 13 forming the casing 10 are coated with tungsten to form a tungsten coating layer B. In this case, a carbon material which is easy to process is used as a substrate A which forms the shape of each of the plates 11 to 13, and a tungsten coating layer B is formed on the substrate A. Further, the suppressing electrode of the manipulator assembly is also formed of a carbon material as a matrix, and the surface of the substrate is coated with tungsten. Here, the junction of the substrate 9 200949891 and the tungsten coating layer are the same as those of the second drawing. 5 10 is a exploded perspective view of the H2GG-operated H2GG in the ion implantation apparatus according to an exemplary embodiment of the present invention, which is manufactured by coating the carbon material with tungsten. The suppression electrode 21G. Reference numeral 220 denotes a ground electrode of the manipulator 200. In a preferred embodiment of the present invention, graphite which is easy to process and which is advantageous in terms of strength, corrosion resistance, heat resistance, weight, and cost, rather than a conventional tungsten material, is used as the carbon material. The plates of the box and the suppression electrodes of the manipulator assembly. Each of the bottom plate 12, the side and end plates 11 forming the casing 10, and the top plate 13 are formed into a suitable shape using a graphite matrix, and the surface of the graphite substrate is coated with tungsten to a predetermined thickness. Next, the tungsten coated sheets 11 to 13 are combined to form the case 10. The reason why the surface of the substrate is coated with tungsten is that the amount of ions generated when the case is formed only of carbon is reduced. Thus, in the present invention, the graphite material which is easy to process is used as the matrix A and the tungsten coating layer B is formed on the surface of the substrate A in accordance with the characteristics of the procedure for manufacturing the arc chamber and the suppressing electrode of the manipulator assembly. . Thus, conventional methods of forming tungsten or any other metal matrix compared to corresponding components reduce manufacturing costs, facilitate processing, and reduce weight. In the present invention, a tungsten substrate which has been used can be reused as a tungsten coating material. The β 卩, secretly formed and used in the ion implanting device of the crane base or replaced according to the degree of damage 'and replaced: the enamel is reused as a tungsten coating material. Further, in the present invention, tungsten is preferably directly coated on the surface of the graphite substrate by a plasma spray coating process. In this case, the tungsten coating layer has a thickness preferably in the range of 100 to 1,000 μm. When the thickness is less than 1 μm, the coated surface may be damaged by the ion beam to reduce the life (in the case where the arc tank may be hollowed out during ion beam radiation). When the thickness exceeds ΙΟΟΟμηη, the tungsten coating layer may be easily peeled off from the substrate, and the amount of coated tungsten is increased', which leads to an increase in manufacturing cost. Therefore, the thickness of the tungsten coating layer is preferably in the range of 150 to 450 μm. In addition, it is possible to collect and recycle the tungsten formed by the tungsten substrate which has been coated with tungsten by a plasma coating process. That is, when the hollowed out portion of the tungsten substrate is coated with tungsten, it is possible to recycle the corresponding tungsten substrate (with the structure of the tungsten substrate and the tungsten coating layer). In this case, it is possible to prevent the waste of the tungsten matrix due to the circulation of the tungsten substrate, which also includes the undamaged portion except for the damage caused by the ions, and 15 is advantageous for the operation of the device and It is possible to reduce costs. As described above, according to the ion implantation apparatus of the present invention and the method for manufacturing the same, each of the tungsten coating members, such as a bottom plate, side and end plates, and a top plate of a case forming an arc tank in the source head assembly, and The suppressing electrode of a manipulator assembly is formed by forming a desired shape from a graphite-based material that is easy to process, lightweight, and inexpensive, and coating the surface of the graphite substrate with tungsten. Therefore, it is possible to improve the freedom of component design and reduce manufacturing cost and weight. In addition, since graphite used as a matrix material has an excellent heat dissipation effect and absorbs a part of ions when the plasma collides with graphite, the surface of the graphite base is less hollowed out. Therefore, it is possible to extend the replacement period and reduce maintenance costs. In addition, since a graphite substrate which is heat-resistant and has excellent strength is used for an ion implantation apparatus including a tungsten-coated member, there is no deformation due to weight and heat (preventing deformation of the member and deformation of the entire device), thereby ensuring A precise procedure. Although the exemplary embodiments of the present invention have been shown and described in detail, it will be understood by those of ordinary skill in the art Various changes to these 10 exemplary embodiments are made. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing an arc box of a source assembly for generating ions in an ion implantation apparatus; FIG. 2 is a diagram showing a formation according to an exemplary embodiment of the present invention. a cross-sectional view of a wall of a box of an arc box in a sub-implant device; and FIG. 3 is a view of a manipulator in the ion implant device in accordance with an exemplary embodiment of the present invention Decompose the view. [Description of main component symbols] 10... Cabinet 100... Arc box 11... Side and end plate 200... Manipulator 12... Base plate 210... Suppression electrode 13... Top plate 220... Ground electrode 15... Slit A... Substrate 30···Reflection Extreme B... crane coating 12