KR101132720B1 - Tungsten coated liner and arc chamber of ion implantation apparatus - Google Patents

Tungsten coated liner and arc chamber of ion implantation apparatus Download PDF

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Publication number
KR101132720B1
KR101132720B1 KR1020100135531A KR20100135531A KR101132720B1 KR 101132720 B1 KR101132720 B1 KR 101132720B1 KR 1020100135531 A KR1020100135531 A KR 1020100135531A KR 20100135531 A KR20100135531 A KR 20100135531A KR 101132720 B1 KR101132720 B1 KR 101132720B1
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KR
South Korea
Prior art keywords
tungsten
liner
arc chamber
coated
graphite plate
Prior art date
Application number
KR1020100135531A
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Korean (ko)
Inventor
최영미
Original Assignee
주식회사성심
최영미
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Priority to KR1020100135531A priority Critical patent/KR101132720B1/en
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Publication of KR101132720B1 publication Critical patent/KR101132720B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Abstract

A tungsten coated liner is disclosed. The tungsten coating liner of the present invention includes a rectangular graphite plate rounded along the top edge, and a tungsten coating layer coated on the top surface of the graphite plate with a predetermined thickness. Therefore, cracks generated along the edge of the liner can be prevented.

Description

Tungsten Coated Liner and Arc Chamber of Ion Implantation Apparatus Using the Tungsten Coated Liner

The present invention relates to an arc chamber of an ion implanter, and more particularly to a tungsten coated liner constituting the arc chamber inner wall.

In a semiconductor manufacturing process for manufacturing an integrated circuit device, an ion implantation apparatus is used to implant ions into a semiconductor substrate, that is, a wafer surface.

The ion implantation apparatus includes an arc chamber in which source gases collide with accelerated hot electrons to ionize to generate ions to be injected into a wafer.

Typically, the arc chamber emits hot electrons by arc generation by applying a high voltage between the filament and the cathode to produce accelerated hot electrons. Therefore, the arc chamber inner wall uses refractory metals such as tungsten or molybdenum to withstand high temperatures of 900 degrees or more.

However, due to the characteristics of the semiconductor manufacturing line, which is generally operated 24 hours a full time, the arc chamber of the expensive tungsten cylinder is also replaced every two weeks due to internal wall damage. Therefore, replacing the arc chamber of expensive tungsten cylindrical material with consumables every two weeks increases the production cost of semiconductor devices.

To solve this problem, a technique of using a tungsten liner on the inner wall of a metal cylinder instead of a tungsten cylinder was introduced. The cost savings was achieved by replacing only the damaged tungsten liner in the inner wall of the metal cylindrical arc chamber.

However, tungsten liners are also very expensive, and according to Korean Patent Application Publication No. 10-0853404, a liner coated with tungsten on a carbon material such as graphite is introduced.

Conventional tungsten coating liner technology can reduce the use of tungsten compared to the tungsten liner has the advantage of reducing the maintenance cost, but there was a problem of serious contamination when the tungsten coating layer cracks. In particular, the tungsten coating liner may be partially dropped due to thermal stress because the bonding strength between layers is relatively decreased along the interface between the coating layer and the base material at the edge. When the coating film is partially peeled off, the internal base material is exposed, which may act as a pollution source.

An object of the present invention for solving the above problems is to provide a tungsten coated liner that can prevent edge cracks.

Another object of the present invention is to provide a tungsten coated liner including a partial tungsten liner in a portion where damage is frequently caused.

Still another object of the present invention is to provide an arc chamber of an ion implantation apparatus using such a tungsten coated liner.

The liner of the present invention for achieving the above object is a tungsten coated liners constituting the inner wall of the arc chamber of the ion implanter, each of the tungsten coated liners is a rounded graphite plate rounded along the upper edge and the upper surface of the graphite plate It characterized in that it is provided with a tungsten coating layer coated to a predetermined thickness. Graphite plate has a groove on the upper surface, tungsten liner is preferably inserted in the groove.

The arc chamber of the present invention also has a box-shaped metal body with an inner space for arc generation, and a plurality of tungsten coated liners for covering each wall of the inner space of the metal body, each of the tungsten coated liners having an upper edge Rounded square graphite plate and a tungsten coating layer coated with a predetermined thickness on the upper surface of the graphite plate.

In the tungsten coated liners constituting the inner wall of the arc chamber of the ion implanter of another embodiment of the present invention, each of the tungsten coated liners is a rectangular graphite plate having a groove on the upper surface, a tungsten liner inserted into the groove, and the graphite plate Characterized by having a tungsten coating layer coated on a predetermined thickness on the upper surface.

Since the tungsten coating liner according to the embodiment of the present invention increases the edge bonding area of the tungsten coating layer by the edge rounding process, edge cracks may be remarkably reduced since it is resistant to external impact or physical stress and to resistance to thermal stress. In addition, for parts that are severely damaged, the tungsten liner is reinforced inside the coating layer, thereby extending the use time, thereby reducing the cost of replacing parts.

1 is a view showing a schematic configuration of an ion implantation apparatus according to the present invention.
Figure 2 is a photograph showing the mounting state of the tungsten coating liner mounted in the arc chamber of the ion implantation apparatus according to the present invention.
3 is a view for explaining the problem of the conventional tungsten coating liner.
4 is a view showing an embodiment of a tungsten coated liner according to the present invention.
5 is a view showing another embodiment of the tungsten coating liner according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in more detail with reference to the accompanying drawings. As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to the specific disclosed form, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

1 is a view showing a schematic configuration of an ion implantation apparatus according to the present invention. Figure 2 is a photograph showing the mounting state of the tungsten coating liner mounted in the arc chamber of the ion implantation apparatus according to the present invention.

Referring to the drawings, the ion implantation apparatus 100 is used to implant ions into a semiconductor substrate or wafer 104 mounted on the support 102. Ions are produced by an ion source or arc chamber 106. The ions are generally directed towards the substrate 104 in the form of an ion beam by the mass spectrometer 108. Mass spectrometry is performed by the analyzer, after which the desired ions are selected by the slit 110 which allows only the passage of ions with the mass / charge ratio desired to proceed to the substrate. Ion source 106, mass spectrometer 108 and wafer support 102 are mounted in vacuum chamber 114 maintained in vacuum by vacuum pump 112.

The arc chamber 106 has a box shape including an inner space defined by front, top, bottom, left and right sides, and a rear side, and filaments 106a and cathodes 106b protruding into the inner space are formed on the upper side and the lower side, respectively. .

Hot electrons are released from the filament by the current applied to the filament 106a and the hot electrons are accelerated and moved in the direction of the cathode by the electric field applied between the filament and the cathode and collide with the gas molecules supplied during the movement. Gas molecules are ionized by the collision. Positively charged ions are extracted from the arc chamber 106 to the mass spectrometer 108 through the slit 106c on the front side by the extraction potential between the ionization chamber and the extraction electrode.

Referring to FIG. 2, the arc chamber 106 is a box-shaped metal body 107 that includes an upper wall 106d, a lower wall 106e, a right wall 106f, a left wall 106g, and is surrounded by these walls. An interior space 106h is included. An upper tungsten coating liner 202 is mounted on the inner side of the upper side wall 106d, a lower tungsten coating liner 204 is mounted on the inner side of the lower side wall 106e, and a right tungsten coating liner on the inner side of the right side wall 106f. 206 is mounted, the left tungsten coating liner 208 is mounted on the inner side of the left side wall 106g, and the bottom tungsten coating liner 210 is mounted on the inner side of the bottom side. A filament coupling hole 202a is formed at the center of the upper tungsten coating liner 202, a cathode coupling hole 204a is formed at the center of the lower tungsten coating liner 204, and a center of the bottom tungsten coating liner 210 is formed. In the ion gas injection port 210a is formed.

Each liner is manufactured in the form of a square plate and then mounted to protect the inner wall of the interior space of the arc chamber 106.

3 is a view for explaining the problem of the conventional tungsten coating liner. The conventional tungsten coating liner 300 is mounted on the inner side of the arc chamber 106 and coated the graphite plate 302 with a tungsten coating layer 304. In the conventional tungsten coating liner 300, the tungsten coating is formed on the upper surface of the graphite plate 302 without the edge rounding process, so that the tungsten coating layer 304 is formed at the edge. Therefore, the coating layer of the corner portion where one side is exposed more than the coating layer of the central portion filled with the liner 300 is relatively weak to mechanical impact, and due to the difference in thermal expansion characteristics of the graphite plate 302 and thermal expansion characteristics of the tungsten coating layer 304. When thermal stress is applied, cracks 306 are formed from the coating layer 304 at the edge portion. As the crack progresses, a portion of the edge portion is separated to form a damaged portion 308 on the coating layer 304, and the graphite plate 302 exposed at the damaged portion is provided as a source of contamination during the ionization process or adversely affects the ionization characteristics. Can give

4 is a view showing an embodiment of a tungsten coated liner according to the present invention.

In the tungsten coating liner 400 according to the first embodiment of the present invention, after rounding the edge of the graphite plate 402, the tungsten coating layer 404 is directly coated by a plasma spray coating method or 50 to 800 by an aerosol deposition method. It may also be formed to a thickness.

Since the tungsten coated liner 400 according to the present invention is rounded at the edge of the graphite plate 402, the edge of the coating layer 404 forms a round shape at the edge, so that the tungsten coated liner 400 is dispersed by the inclined plane effect on mechanical impact, and thus impact resistance is achieved. Is increased. In addition, since the edge portion of the coating layer 404 is coupled along the round-processed surface, the bonding surface area is increased, and even if stress is generated at the interface due to the difference in coefficient of thermal expansion of the two layers, the thickness gradually increases as it enters the edge. Since the stress distribution decreases toward the edges because of the combined structure, crack generation due to thermal stress is reduced.

Therefore, the edge-rounded tungsten coated liner 400 according to the present invention has a structure that is more resistant to mechanical and thermal stress than the conventional liner, so that the risk of cracking or damage is reduced, and thus the component replacement cycle may be extended. Reduce maintenance costs.

5 is a view showing another embodiment of the tungsten coating liner according to the present invention.

The tungsten coated liner 500 according to the second embodiment of the present invention rounds the edge of the graphite plate 402 on which the groove 502a is formed. The groove 502a is formed to have a null ratio sufficient to cover the portion 501 in response to the damage portion 501. 50 to 200 μm thick tungsten liner 504 is inserted into the groove 502a of the edge rounded graphite plate 502, and then a 50 to 400 μm thick tungsten coating layer 404 is directly applied by a plasma spray coating method. Coated or formed by aerosol deposition.

The liner 500 according to the second embodiment has a structure in which the tungsten liner 504 and the tungsten coating layer 506 are combined with each other as compared with the first embodiment described above. Therefore, since the tungsten liner 504 and the tungsten coating layer 506 are combined at the damage area, the service life of the liner 500 can be extended and the thickness of the tungsten coating layer can be made relatively thin in the area where the damage is not severe. It can reduce the coating time and reduce the use of expensive tungsten raw materials. In addition, since the area of the contact interface between the tungsten coating layer 506 and the graphite plate 502 is reduced, thermal stress generated at the interface is reduced, and the impact resistance is increased because the interface bonding force between the tungsten liner 504 and the tungsten coating layer 506 is increased. do.

In the above, the monolithic three-axis magnetic sensor according to the embodiments of the present invention has been described with reference to the drawings, but the drawings and the description thereof are exemplary and are not limited to the technical spirit of the present invention. Modifications and variations may be made by those skilled in the art. Therefore, the technical spirit of the present invention should not be limited to the embodiments of the present invention.

Claims (2)

In the tungsten coated liners constituting the inner wall of the arc chamber of the ion implanter, each of the tungsten coated liners
A square graphite plate rounded along the top edge; And
Tungsten coating liner, characterized in that provided with a tungsten coating layer coated on a predetermined thickness on the upper surface of the graphite plate. The tungsten coated liner of claim 1, wherein the graphite plate has a groove on an upper surface thereof, and a tungsten liner is inserted into the groove.
KR1020100135531A 2010-12-27 2010-12-27 Tungsten coated liner and arc chamber of ion implantation apparatus KR101132720B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101769844B1 (en) * 2015-11-12 2017-08-21 주식회사 밸류엔지니어링 Arc chamber for ion implanter
CN111902904A (en) * 2018-03-30 2020-11-06 瓦里安半导体设备公司 Ion implantation foil assembly

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06223771A (en) * 1993-01-29 1994-08-12 Sony Corp Ion implantation device
KR20070007621A (en) * 2005-07-11 2007-01-16 삼성전자주식회사 Ion source section for ion implantation equipment
KR100853404B1 (en) 2008-04-18 2008-08-21 (주)제이씨이노텍 Ion implantation apparatus having tungsten coating parts and method for manufacturing the same
KR20100101721A (en) * 2009-03-10 2010-09-20 주식회사 아스플로 Parts for ion implantation apparatus, manufacturing method thereof and ion implantation apparatus using the parts

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06223771A (en) * 1993-01-29 1994-08-12 Sony Corp Ion implantation device
KR20070007621A (en) * 2005-07-11 2007-01-16 삼성전자주식회사 Ion source section for ion implantation equipment
KR100853404B1 (en) 2008-04-18 2008-08-21 (주)제이씨이노텍 Ion implantation apparatus having tungsten coating parts and method for manufacturing the same
KR20100101721A (en) * 2009-03-10 2010-09-20 주식회사 아스플로 Parts for ion implantation apparatus, manufacturing method thereof and ion implantation apparatus using the parts

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101769844B1 (en) * 2015-11-12 2017-08-21 주식회사 밸류엔지니어링 Arc chamber for ion implanter
CN111902904A (en) * 2018-03-30 2020-11-06 瓦里安半导体设备公司 Ion implantation foil assembly
TWI713415B (en) * 2018-03-30 2020-12-11 美商瓦里安半導體設備公司 Ion source and foil liner
CN111902904B (en) * 2018-03-30 2023-08-22 瓦里安半导体设备公司 Ion source and foil liner

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