TWI673776B - 離子植入機中的ｓｉｃ鍍膜 - Google Patents
離子植入機中的ｓｉｃ鍍膜 Download PDFInfo
- Publication number
- TWI673776B TWI673776B TW103132000A TW103132000A TWI673776B TW I673776 B TWI673776 B TW I673776B TW 103132000 A TW103132000 A TW 103132000A TW 103132000 A TW103132000 A TW 103132000A TW I673776 B TWI673776 B TW I673776B
- Authority
- TW
- Taiwan
- Prior art keywords
- conductive
- silicon carbide
- ion source
- wall
- low
- Prior art date
Links
- 239000011248 coating agent Substances 0.000 title abstract description 5
- 238000000576 coating method Methods 0.000 title abstract description 5
- 150000002500 ions Chemical class 0.000 claims abstract description 150
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 72
- 238000000605 extraction Methods 0.000 claims abstract description 63
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 238000004891 communication Methods 0.000 claims description 15
- 229910002804 graphite Inorganic materials 0.000 claims description 15
- 239000010439 graphite Substances 0.000 claims description 15
- 238000005468 ion implantation Methods 0.000 claims description 13
- 239000000356 contaminant Substances 0.000 abstract description 14
- 238000010884 ion-beam technique Methods 0.000 abstract description 13
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000003344 environmental pollutant Substances 0.000 description 5
- 231100000719 pollutant Toxicity 0.000 description 5
- 230000001629 suppression Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- -1 carbon ions Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
- H01J37/12—Lenses electrostatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/061—Construction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/083—Beam forming
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/039,654 US9384937B2 (en) | 2013-09-27 | 2013-09-27 | SiC coating in an ion implanter |
| US14/039,654 | 2013-09-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201517132A TW201517132A (zh) | 2015-05-01 |
| TWI673776B true TWI673776B (zh) | 2019-10-01 |
Family
ID=52739156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103132000A TWI673776B (zh) | 2013-09-27 | 2014-09-17 | 離子植入機中的ｓｉｃ鍍膜 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9384937B2 (https=) |
| JP (1) | JP6450372B2 (https=) |
| KR (1) | KR101967238B1 (https=) |
| CN (1) | CN105593401B (https=) |
| TW (1) | TWI673776B (https=) |
| WO (1) | WO2015048122A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9384937B2 (en) | 2013-09-27 | 2016-07-05 | Varian Semiconductor Equipment Associates, Inc. | SiC coating in an ion implanter |
| US9543110B2 (en) * | 2013-12-20 | 2017-01-10 | Axcelis Technologies, Inc. | Reduced trace metals contamination ion source for an ion implantation system |
| JP6539414B2 (ja) * | 2015-07-07 | 2019-07-03 | バリュー エンジニアリング リミテッドＶａｌｕｅ Ｅｎｇｉｎｅｅｒｉｎｇ，Ｌｔｄ． | イオン注入器用リペラー、カソード、チャンバーウォール、スリット部材、及びこれを含むイオン発生装置 |
| US10460941B2 (en) * | 2016-11-08 | 2019-10-29 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping using a solid dopant source |
| US9934933B1 (en) * | 2017-01-19 | 2018-04-03 | Kla-Tencor Corporation | Extractor electrode for electron source |
| US10276340B1 (en) * | 2017-12-20 | 2019-04-30 | Varian Semiconductor Equipment Associates, Inc. | Low particle capacitively coupled components for workpiece processing |
| CN113261073B (zh) * | 2018-12-15 | 2024-07-16 | 恩特格里斯公司 | 利用非钨材料的氟离子植入系统和其使用方法 |
| US12033843B2 (en) * | 2020-03-26 | 2024-07-09 | Agilent Technologies, Inc. | Mass spectrometry ION source |
| WO2023139532A1 (en) * | 2022-01-21 | 2023-07-27 | Cisterni Marco | Ion source |
| US12431338B2 (en) | 2023-11-03 | 2025-09-30 | Applied Materials, Inc. | Composite structures for semiconductor process chambers |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100140508A1 (en) * | 2008-12-04 | 2010-06-10 | Blake Julian G | Coated graphite liners |
| US20130072008A1 (en) * | 2011-09-16 | 2013-03-21 | Alexander S. Perel | Technique for ion implanting a target |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05190129A (ja) * | 1992-01-13 | 1993-07-30 | Toshiba Corp | 静電型レンズ |
| WO1993018201A1 (en) | 1992-03-02 | 1993-09-16 | Varian Associates, Inc. | Plasma implantation process and equipment |
| US5343047A (en) * | 1992-06-27 | 1994-08-30 | Tokyo Electron Limited | Ion implantation system |
| JP3090802B2 (ja) * | 1992-12-17 | 2000-09-25 | 株式会社東芝 | 静電レンズおよびその製造方法 |
| JPH09259779A (ja) * | 1996-03-15 | 1997-10-03 | Nissin Electric Co Ltd | イオン源およびそれを用いたイオン注入装置 |
| US6090733A (en) | 1997-08-27 | 2000-07-18 | Bridgestone Corporation | Sintered silicon carbide and method for producing the same |
| US6331713B1 (en) | 1999-10-06 | 2001-12-18 | Applied Materials, Inc. | Movable ion source assembly |
| US7018947B2 (en) * | 2000-02-24 | 2006-03-28 | Shipley Company, L.L.C. | Low resistivity silicon carbide |
| US6710338B2 (en) * | 2000-10-18 | 2004-03-23 | Fei Company | Focused ion beam system |
| US6805952B2 (en) * | 2000-12-29 | 2004-10-19 | Lam Research Corporation | Low contamination plasma chamber components and methods for making the same |
| US6929720B2 (en) * | 2003-06-09 | 2005-08-16 | Tokyo Electron Limited | Sputtering source for ionized physical vapor deposition of metals |
| US20080223409A1 (en) * | 2003-12-12 | 2008-09-18 | Horsky Thomas N | Method and apparatus for extending equipment uptime in ion implantation |
| FR2871934B1 (fr) * | 2004-06-16 | 2006-09-22 | Ion Beam Services Sa | Alimentation d'implanteur ionique prevue pour une limitation de l'effet de charge |
| US20070137576A1 (en) * | 2005-12-19 | 2007-06-21 | Varian Semiconductor Equipment Associates, Inc. | Technique for providing an inductively coupled radio frequency plasma flood gun |
| US20080160170A1 (en) * | 2006-12-28 | 2008-07-03 | Varian Semiconductor Equipment Assoicates, Inc. | Technique for using an improved shield ring in plasma-based ion implantation |
| US20080169183A1 (en) * | 2007-01-16 | 2008-07-17 | Varian Semiconductor Equipment Associates, Inc. | Plasma Source with Liner for Reducing Metal Contamination |
| CN100577866C (zh) * | 2007-02-27 | 2010-01-06 | 中微半导体设备(上海)有限公司 | 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法 |
| US20090084988A1 (en) * | 2007-09-27 | 2009-04-02 | Varian Semiconductor Equipment Associates, Inc. | Single wafer implanter for silicon-on-insulator wafer fabrication |
| US7807984B2 (en) * | 2008-01-02 | 2010-10-05 | Applied Materials, Inc. | Ion implanters |
| US7888662B2 (en) | 2008-06-20 | 2011-02-15 | Varian Semiconductor Equipment Associates, Inc. | Ion source cleaning method and apparatus |
| US8466431B2 (en) * | 2009-02-12 | 2013-06-18 | Varian Semiconductor Equipment Associates, Inc. | Techniques for improving extracted ion beam quality using high-transparency electrodes |
| US8476587B2 (en) * | 2009-05-13 | 2013-07-02 | Micromass Uk Limited | Ion source with surface coating |
| US8729806B2 (en) * | 2010-02-02 | 2014-05-20 | The Regents Of The University Of California | RF-driven ion source with a back-streaming electron dump |
| US20130108863A1 (en) * | 2010-04-21 | 2013-05-02 | Entegris, Inc. | Coated Graphite Article And Reactive Ion Etch Manufacturing And Refurbishment Of Graphite Article |
| US8590485B2 (en) * | 2010-04-26 | 2013-11-26 | Varian Semiconductor Equipment Associates, Inc. | Small form factor plasma source for high density wide ribbon ion beam generation |
| US20120000421A1 (en) * | 2010-07-02 | 2012-01-05 | Varian Semicondutor Equipment Associates, Inc. | Control apparatus for plasma immersion ion implantation of a dielectric substrate |
| US20120056101A1 (en) * | 2010-09-03 | 2012-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Ion doping apparatus and ion doping method |
| US8471476B2 (en) * | 2010-10-08 | 2013-06-25 | Varian Semiconductor Equipment Associates, Inc. | Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement |
| FR2981193B1 (fr) * | 2011-10-06 | 2014-05-23 | Ion Beam Services | Procede de commande d'un implanteur ionique en mode immersion plasma. |
| US9064795B2 (en) * | 2012-03-30 | 2015-06-23 | Varian Semiconductor Equipment Associates, Inc. | Technique for processing a substrate |
| US8809803B2 (en) * | 2012-08-13 | 2014-08-19 | Varian Semiconductor Equipment Associates, Inc. | Inductively coupled plasma ion source with multiple antennas for wide ion beam |
| US20140097752A1 (en) * | 2012-10-09 | 2014-04-10 | Varian Semiconductor Equipment Associates, Inc. | Inductively Coupled Plasma ION Source Chamber with Dopant Material Shield |
| JP2014157758A (ja) * | 2013-02-18 | 2014-08-28 | Sumitomo Heavy Ind Ltd | マイクロ波イオン源及びその起動方法 |
| US9384937B2 (en) | 2013-09-27 | 2016-07-05 | Varian Semiconductor Equipment Associates, Inc. | SiC coating in an ion implanter |
-
2013
- 2013-09-27 US US14/039,654 patent/US9384937B2/en active Active
-
2014
- 2014-09-17 TW TW103132000A patent/TWI673776B/zh active
- 2014-09-24 CN CN201480053311.2A patent/CN105593401B/zh active Active
- 2014-09-24 JP JP2016516865A patent/JP6450372B2/ja active Active
- 2014-09-24 WO PCT/US2014/057201 patent/WO2015048122A1/en not_active Ceased
- 2014-09-24 KR KR1020167010646A patent/KR101967238B1/ko active Active
-
2016
- 2016-06-07 US US15/175,501 patent/US9793086B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100140508A1 (en) * | 2008-12-04 | 2010-06-10 | Blake Julian G | Coated graphite liners |
| US20130072008A1 (en) * | 2011-09-16 | 2013-03-21 | Alexander S. Perel | Technique for ion implanting a target |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101967238B1 (ko) | 2019-04-09 |
| JP6450372B2 (ja) | 2019-01-09 |
| US9793086B2 (en) | 2017-10-17 |
| US20160293378A1 (en) | 2016-10-06 |
| US20150090897A1 (en) | 2015-04-02 |
| KR20160064147A (ko) | 2016-06-07 |
| US9384937B2 (en) | 2016-07-05 |
| CN105593401B (zh) | 2017-10-27 |
| WO2015048122A1 (en) | 2015-04-02 |
| JP2016540110A (ja) | 2016-12-22 |
| CN105593401A (zh) | 2016-05-18 |
| TW201517132A (zh) | 2015-05-01 |
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