JP2016536599A5 - - Google Patents
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- JP2016536599A5 JP2016536599A5 JP2016537398A JP2016537398A JP2016536599A5 JP 2016536599 A5 JP2016536599 A5 JP 2016536599A5 JP 2016537398 A JP2016537398 A JP 2016537398A JP 2016537398 A JP2016537398 A JP 2016537398A JP 2016536599 A5 JP2016536599 A5 JP 2016536599A5
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- Prior art keywords
- electrode
- nanogap
- mask
- gap
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 claims description 119
- 239000000758 substrate Substances 0.000 claims description 91
- 230000015572 biosynthetic process Effects 0.000 description 134
- 238000005755 formation reaction Methods 0.000 description 134
- 238000000034 method Methods 0.000 description 120
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 73
- 229910021332 silicide Inorganic materials 0.000 description 72
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 69
- 229910052814 silicon oxide Inorganic materials 0.000 description 65
- 239000010408 film Substances 0.000 description 58
- 108020004414 DNA Proteins 0.000 description 42
- 102000053602 DNA Human genes 0.000 description 42
- 239000000463 material Substances 0.000 description 41
- 229910052751 metal Inorganic materials 0.000 description 38
- 239000002184 metal Substances 0.000 description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
- 238000005530 etching Methods 0.000 description 28
- 229910052710 silicon Inorganic materials 0.000 description 28
- 239000010703 silicon Substances 0.000 description 28
- 238000010438 heat treatment Methods 0.000 description 27
- 239000004065 semiconductor Substances 0.000 description 26
- 102000039446 nucleic acids Human genes 0.000 description 23
- 108020004707 nucleic acids Proteins 0.000 description 23
- 150000007523 nucleic acids Chemical class 0.000 description 23
- 230000008569 process Effects 0.000 description 22
- 108020004682 Single-Stranded DNA Proteins 0.000 description 20
- 238000006243 chemical reaction Methods 0.000 description 18
- 150000001875 compounds Chemical group 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 239000010936 titanium Substances 0.000 description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 239000004020 conductor Substances 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 11
- 238000001312 dry etching Methods 0.000 description 10
- 239000002090 nanochannel Substances 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 8
- 229910017052 cobalt Inorganic materials 0.000 description 8
- 239000010941 cobalt Substances 0.000 description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 8
- 238000011161 development Methods 0.000 description 8
- 229920002477 rna polymer Polymers 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 7
- 229910052758 niobium Inorganic materials 0.000 description 6
- 239000010955 niobium Substances 0.000 description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 6
- 229910052763 palladium Inorganic materials 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000002041 carbon nanotube Substances 0.000 description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- ISAKRJDGNUQOIC-UHFFFAOYSA-N Uracil Chemical compound O=C1C=CNC(=O)N1 ISAKRJDGNUQOIC-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000012811 non-conductive material Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000000615 nonconductor Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- OPTASPLRGRRNAP-UHFFFAOYSA-N cytosine Chemical compound NC=1C=CNC(=O)N=1 OPTASPLRGRRNAP-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- UYTPUPDQBNUYGX-UHFFFAOYSA-N guanine Chemical compound O=C1NC(N)=NC2=C1N=CN2 UYTPUPDQBNUYGX-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- 239000002773 nucleotide Substances 0.000 description 2
- 125000003729 nucleotide group Chemical group 0.000 description 2
- 229910021339 platinum silicide Inorganic materials 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- RWQNBRDOKXIBIV-UHFFFAOYSA-N thymine Chemical compound CC1=CNC(=O)NC1=O RWQNBRDOKXIBIV-UHFFFAOYSA-N 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229940035893 uracil Drugs 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 150000001720 carbohydrates Chemical class 0.000 description 1
- 235000014633 carbohydrates Nutrition 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229940104302 cytosine Drugs 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 150000003212 purines Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229940113082 thymine Drugs 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013176132 | 2013-08-27 | ||
| JP2013176132 | 2013-08-27 | ||
| JP2013177051 | 2013-08-28 | ||
| JP2013177051 | 2013-08-28 | ||
| PCT/IB2014/002143 WO2015028886A2 (en) | 2013-08-27 | 2014-08-26 | Nano-gap electrode and methods for manufacturing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016536599A JP2016536599A (ja) | 2016-11-24 |
| JP2016536599A5 true JP2016536599A5 (https=) | 2017-11-16 |
Family
ID=52587427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016537398A Pending JP2016536599A (ja) | 2013-08-27 | 2014-08-26 | ナノギャップ電極およびその製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20160245789A1 (https=) |
| EP (1) | EP3042187A4 (https=) |
| JP (1) | JP2016536599A (https=) |
| KR (1) | KR20160086320A (https=) |
| CN (1) | CN105593673A (https=) |
| CA (1) | CA2922600A1 (https=) |
| TW (2) | TWI632599B (https=) |
| WO (1) | WO2015028886A2 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9194838B2 (en) | 2010-03-03 | 2015-11-24 | Osaka University | Method and device for identifying nucleotide, and method and device for determining nucleotide sequence of polynucleotide |
| KR20150041146A (ko) | 2012-08-17 | 2015-04-15 | 오사카 유니버시티 | 시료의 분석 방법 |
| JP6282036B2 (ja) | 2012-12-27 | 2018-02-21 | クオンタムバイオシステムズ株式会社 | 物質の移動速度の制御方法および制御装置 |
| EP3047282B1 (en) | 2013-09-18 | 2019-05-15 | Quantum Biosystems Inc. | Biomolecule sequencing devices, systems and methods |
| JP2015077652A (ja) | 2013-10-16 | 2015-04-23 | クオンタムバイオシステムズ株式会社 | ナノギャップ電極およびその製造方法 |
| US10438811B1 (en) | 2014-04-15 | 2019-10-08 | Quantum Biosystems Inc. | Methods for forming nano-gap electrodes for use in nanosensors |
| WO2015170782A1 (en) | 2014-05-08 | 2015-11-12 | Osaka University | Devices, systems and methods for linearization of polymers |
| KR101489154B1 (ko) * | 2014-06-26 | 2015-02-03 | 국민대학교산학협력단 | 잔류응력을 이용한 나노갭 센서의 제조방법 및 이에 의해 제조되는 나노갭 센서 |
| US20160177383A1 (en) * | 2014-12-16 | 2016-06-23 | Arizona Board Of Regents On Behalf Of Arizona State University | Nanochannel with integrated tunnel gap |
| CA3000942A1 (en) * | 2015-10-08 | 2017-04-13 | Quantum Biosystems Inc. | Devices, systems and methods for nucleic acid sequencing |
| KR20190075010A (ko) | 2016-04-27 | 2019-06-28 | 퀀텀 바이오시스템즈 가부시키가이샤 | 생체분자의 측정 및 시퀀싱을 위한 시스템 및 방법 |
| US10168299B2 (en) * | 2016-07-15 | 2019-01-01 | International Business Machines Corporation | Reproducible and manufacturable nanogaps for embedded transverse electrode pairs in nanochannels |
| CN110023479A (zh) * | 2016-08-02 | 2019-07-16 | 量子生物有限公司 | 用于产生和校准纳米电极对的装置和方法 |
| US10739299B2 (en) * | 2017-03-14 | 2020-08-11 | Roche Sequencing Solutions, Inc. | Nanopore well structures and methods |
| US11740226B2 (en) | 2017-10-13 | 2023-08-29 | Analog Devices International Unlimited Company | Designs and fabrication of nanogap sensors |
| EP3572104A1 (de) * | 2018-05-25 | 2019-11-27 | Berlin Heart GmbH | Bauteil zum führen eines fluids mit einem sensor |
| TWI753317B (zh) * | 2019-10-31 | 2022-01-21 | 錼創顯示科技股份有限公司 | 電極結構、微型發光元件以及顯示面板 |
| EP4673745A1 (en) * | 2023-03-02 | 2026-01-07 | Agency for Science, Technology and Research | A nanogap electrode device, a method of making a nanogap electrode device, and a sensor for detecting a target analyte |
| CN120348906A (zh) * | 2025-06-24 | 2025-07-22 | 中国人民解放军国防科技大学 | 一种金属纳米缝隙阵列的制备方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62194673A (ja) * | 1986-02-20 | 1987-08-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH04302151A (ja) * | 1991-03-29 | 1992-10-26 | Toshiba Corp | 電荷結合装置の製造方法 |
| JP3560990B2 (ja) * | 1993-06-30 | 2004-09-02 | 株式会社東芝 | 固体撮像装置 |
| US6905586B2 (en) * | 2002-01-28 | 2005-06-14 | Ut-Battelle, Llc | DNA and RNA sequencing by nanoscale reading through programmable electrophoresis and nanoelectrode-gated tunneling and dielectric detection |
| JP2003332555A (ja) * | 2002-05-09 | 2003-11-21 | Fuji Film Microdevices Co Ltd | 固体撮像素子およびその製造方法 |
| US7410564B2 (en) * | 2003-01-27 | 2008-08-12 | Agilent Technologies, Inc. | Apparatus and method for biopolymer identification during translocation through a nanopore |
| JP3787630B2 (ja) * | 2003-02-14 | 2006-06-21 | 独立行政法人情報通信研究機構 | ナノギャップ電極の製造方法 |
| TWI273237B (en) * | 2004-12-13 | 2007-02-11 | Nat Applied Res Laboratories | Coulomb blockade device operated under room temperature |
| ATE529734T1 (de) * | 2005-04-06 | 2011-11-15 | Harvard College | Molekulare charakterisierung mit kohlenstoff- nanoröhrchen-steuerung |
| TWI287041B (en) * | 2005-04-27 | 2007-09-21 | Jung-Tang Huang | An ultra-rapid DNA sequencing method with nano-transistors array based devices |
| JP4869985B2 (ja) * | 2006-03-06 | 2012-02-08 | 株式会社Ｊｖｃケンウッド | 液晶表示装置及びその製造方法 |
| WO2008018834A1 (en) * | 2006-08-11 | 2008-02-14 | Agency For Science, Technology And Research | Nanowire sensor, nanowire sensor array and method of fabricating the same |
| GB0625070D0 (en) * | 2006-12-15 | 2007-01-24 | Imp Innovations Ltd | Characterization of molecules |
| JP2008186975A (ja) * | 2007-01-30 | 2008-08-14 | Renesas Technology Corp | 半導体装置の製造方法 |
| TWI383144B (zh) * | 2008-09-23 | 2013-01-21 | Univ Nat Chiao Tung | 感測元件、製造方法及其生物檢測系統 |
| TWI424160B (zh) * | 2009-06-17 | 2014-01-21 | 國立交通大學 | 結合矽奈米線閘極二極體之感測元件、製造方法及其檢測系統 |
| US9194838B2 (en) * | 2010-03-03 | 2015-11-24 | Osaka University | Method and device for identifying nucleotide, and method and device for determining nucleotide sequence of polynucleotide |
| EP2573554A1 (en) * | 2011-09-21 | 2013-03-27 | Nxp B.V. | Apparatus and method for bead detection |
-
2014
- 2014-08-26 KR KR1020167008057A patent/KR20160086320A/ko not_active Withdrawn
- 2014-08-26 CN CN201480047572.3A patent/CN105593673A/zh active Pending
- 2014-08-26 JP JP2016537398A patent/JP2016536599A/ja active Pending
- 2014-08-26 EP EP14839260.8A patent/EP3042187A4/en not_active Withdrawn
- 2014-08-26 CA CA2922600A patent/CA2922600A1/en not_active Abandoned
- 2014-08-26 WO PCT/IB2014/002143 patent/WO2015028886A2/en not_active Ceased
- 2014-08-27 TW TW103129615A patent/TWI632599B/zh not_active IP Right Cessation
- 2014-08-27 TW TW107115826A patent/TW201907454A/zh unknown
-
2016
- 2016-02-19 US US15/048,810 patent/US20160245789A1/en not_active Abandoned
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