JP2016535299A - ウェブベース処理用のマスクレスリソグラフィ - Google Patents

ウェブベース処理用のマスクレスリソグラフィ Download PDF

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Publication number
JP2016535299A
JP2016535299A JP2016525042A JP2016525042A JP2016535299A JP 2016535299 A JP2016535299 A JP 2016535299A JP 2016525042 A JP2016525042 A JP 2016525042A JP 2016525042 A JP2016525042 A JP 2016525042A JP 2016535299 A JP2016535299 A JP 2016535299A
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JP
Japan
Prior art keywords
substrate
processing
strain
roller
alignment
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Pending
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JP2016525042A
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English (en)
Japanese (ja)
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JP2016535299A5 (enExample
Inventor
クリストファー ベンチャー，
クリストファー ベンチャー，
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Applied Materials Inc
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Applied Materials Inc
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Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2016535299A publication Critical patent/JP2016535299A/ja
Publication of JP2016535299A5 publication Critical patent/JP2016535299A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/703—Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Inking, Control Or Cleaning Of Printing Machines (AREA)
JP2016525042A 2013-10-22 2014-09-25 ウェブベース処理用のマスクレスリソグラフィ Pending JP2016535299A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361894328P 2013-10-22 2013-10-22
US61/894,328 2013-10-22
PCT/US2014/057348 WO2015060983A1 (en) 2013-10-22 2014-09-25 Maskless lithography for web based processing

Publications (2)

Publication Number Publication Date
JP2016535299A true JP2016535299A (ja) 2016-11-10
JP2016535299A5 JP2016535299A5 (enExample) 2017-11-02

Family

ID=52993357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016525042A Pending JP2016535299A (ja) 2013-10-22 2014-09-25 ウェブベース処理用のマスクレスリソグラフィ

Country Status (7)

Country Link
US (1) US10073350B2 (enExample)
EP (1) EP3060961A4 (enExample)
JP (1) JP2016535299A (enExample)
KR (1) KR20160077116A (enExample)
CN (2) CN106896647B (enExample)
TW (1) TWI659269B (enExample)
WO (1) WO2015060983A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018116017A (ja) * 2017-01-20 2018-07-26 旭化成株式会社 アライメントマーク及び可撓性基板の歪量検出方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI753865B (zh) * 2015-11-03 2022-02-01 以色列商奧寶科技有限公司 用於高解析度電子圖案化的無針跡直接成像
CA2924160A1 (en) * 2016-03-18 2017-09-18 Chaji, Reza Maskless patterning
US10585360B2 (en) 2017-08-25 2020-03-10 Applied Materials, Inc. Exposure system alignment and calibration method

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073986A (ja) * 2004-08-06 2006-03-16 Fujitsu Ltd 半導体装置の製造方法
JP2006098719A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 露光装置
JP2006098725A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 描画位置の補正方法と、描画位置を補正可能な描画装置
JP2006098727A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 伸縮状態の検出手段を設けた長尺の可撓性記録媒体と、この可撓性記録媒体に伸縮状態を補正して画像を描画可能な描画方法及び装置
JP2006106097A (ja) * 2004-09-30 2006-04-20 Fuji Photo Film Co Ltd 画像記録装置及び画像記録方法
JP2006235448A (ja) * 2005-02-28 2006-09-07 Fuji Photo Film Co Ltd 画像記録システム、画像記録方法、プログラムおよび画像形成方法
JP2006349945A (ja) * 2005-06-15 2006-12-28 Fujifilm Holdings Corp 露光装置
JP2010122526A (ja) * 2008-11-20 2010-06-03 Shinko Electric Ind Co Ltd マスクレス露光方法
US20110253425A1 (en) * 2008-12-23 2011-10-20 Haase Michael A Roll-to-roll digital photolithography
JP2013045815A (ja) * 2011-08-23 2013-03-04 Nikon Corp 露光方法及びデバイス製造方法
JP2013044972A (ja) * 2011-08-24 2013-03-04 V Technology Co Ltd フィルム露光装置
WO2013105317A1 (ja) * 2012-01-12 2013-07-18 株式会社ニコン 基板処理装置、基板処理方法、及び円筒状マスク

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
US5691541A (en) 1996-05-14 1997-11-25 The Regents Of The University Of California Maskless, reticle-free, lithography
US6246064B1 (en) * 1997-09-03 2001-06-12 Hitachi, Ltd. Electron beam drawing apparatus
SG124270A1 (en) * 2002-12-16 2006-08-30 Asml Netherlands Bv Lithographic apparatus with alignment subsystem, device manufacturing method using alignment, and alignment structure
JP2005003799A (ja) * 2003-06-10 2005-01-06 Fuji Photo Film Co Ltd 感光性板状部材吸着機構及び画像記録装置
US7102733B2 (en) * 2004-08-13 2006-09-05 Asml Holding N.V. System and method to compensate for static and dynamic misalignments and deformations in a maskless lithography tool
KR20060051977A (ko) * 2004-09-30 2006-05-19 후지 샤신 필름 가부시기가이샤 묘화 방법 및 장치
US7368207B2 (en) 2006-03-31 2008-05-06 Eastman Kodak Company Dynamic compensation system for maskless lithography
US20090042139A1 (en) 2007-04-10 2009-02-12 Nikon Corporation Exposure method and electronic device manufacturing method
CN102460633B (zh) * 2009-05-20 2014-12-17 迈普尔平版印刷Ip有限公司 用于光刻系统的图案数据转换器

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073986A (ja) * 2004-08-06 2006-03-16 Fujitsu Ltd 半導体装置の製造方法
JP2006098719A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 露光装置
JP2006098725A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 描画位置の補正方法と、描画位置を補正可能な描画装置
JP2006098727A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 伸縮状態の検出手段を設けた長尺の可撓性記録媒体と、この可撓性記録媒体に伸縮状態を補正して画像を描画可能な描画方法及び装置
JP2006106097A (ja) * 2004-09-30 2006-04-20 Fuji Photo Film Co Ltd 画像記録装置及び画像記録方法
JP2006235448A (ja) * 2005-02-28 2006-09-07 Fuji Photo Film Co Ltd 画像記録システム、画像記録方法、プログラムおよび画像形成方法
JP2006349945A (ja) * 2005-06-15 2006-12-28 Fujifilm Holdings Corp 露光装置
JP2010122526A (ja) * 2008-11-20 2010-06-03 Shinko Electric Ind Co Ltd マスクレス露光方法
US20110253425A1 (en) * 2008-12-23 2011-10-20 Haase Michael A Roll-to-roll digital photolithography
JP2013045815A (ja) * 2011-08-23 2013-03-04 Nikon Corp 露光方法及びデバイス製造方法
JP2013044972A (ja) * 2011-08-24 2013-03-04 V Technology Co Ltd フィルム露光装置
WO2013105317A1 (ja) * 2012-01-12 2013-07-18 株式会社ニコン 基板処理装置、基板処理方法、及び円筒状マスク

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018116017A (ja) * 2017-01-20 2018-07-26 旭化成株式会社 アライメントマーク及び可撓性基板の歪量検出方法

Also Published As

Publication number Publication date
CN106896647B (zh) 2019-05-10
TW201531808A (zh) 2015-08-16
WO2015060983A1 (en) 2015-04-30
US20160238941A1 (en) 2016-08-18
CN106896647A (zh) 2017-06-27
EP3060961A4 (en) 2017-06-28
TWI659269B (zh) 2019-05-11
CN105659166A (zh) 2016-06-08
US10073350B2 (en) 2018-09-11
EP3060961A1 (en) 2016-08-31
CN105659166B (zh) 2019-01-29
KR20160077116A (ko) 2016-07-01

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