TWI659269B - 用於網格式處理之無遮罩微影 - Google Patents

用於網格式處理之無遮罩微影 Download PDF

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Publication number
TWI659269B
TWI659269B TW103134697A TW103134697A TWI659269B TW I659269 B TWI659269 B TW I659269B TW 103134697 A TW103134697 A TW 103134697A TW 103134697 A TW103134697 A TW 103134697A TW I659269 B TWI659269 B TW I659269B
Authority
TW
Taiwan
Prior art keywords
substrate
distortion
processing
alignment marks
roller
Prior art date
Application number
TW103134697A
Other languages
English (en)
Chinese (zh)
Other versions
TW201531808A (zh
Inventor
克利斯多福 班傑
Original Assignee
應用材料股份有限公司
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Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201531808A publication Critical patent/TW201531808A/zh
Application granted granted Critical
Publication of TWI659269B publication Critical patent/TWI659269B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/703—Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Inking, Control Or Cleaning Of Printing Machines (AREA)
TW103134697A 2013-10-22 2014-10-06 用於網格式處理之無遮罩微影 TWI659269B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361894328P 2013-10-22 2013-10-22
US61/894,328 2013-10-22

Publications (2)

Publication Number Publication Date
TW201531808A TW201531808A (zh) 2015-08-16
TWI659269B true TWI659269B (zh) 2019-05-11

Family

ID=52993357

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103134697A TWI659269B (zh) 2013-10-22 2014-10-06 用於網格式處理之無遮罩微影

Country Status (7)

Country Link
US (1) US10073350B2 (enExample)
EP (1) EP3060961A4 (enExample)
JP (1) JP2016535299A (enExample)
KR (1) KR20160077116A (enExample)
CN (2) CN106896647B (enExample)
TW (1) TWI659269B (enExample)
WO (1) WO2015060983A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI753865B (zh) * 2015-11-03 2022-02-01 以色列商奧寶科技有限公司 用於高解析度電子圖案化的無針跡直接成像
CA2924160A1 (en) * 2016-03-18 2017-09-18 Chaji, Reza Maskless patterning
JP6832170B2 (ja) * 2017-01-20 2021-02-24 旭化成株式会社 可撓性基板の歪量検出方法
US10585360B2 (en) 2017-08-25 2020-03-10 Applied Materials, Inc. Exposure system alignment and calibration method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201107897A (en) * 2009-05-20 2011-03-01 Mapper Lithography Ip Bv Pattern data conversion for lithography system
CN102301280A (zh) * 2008-12-23 2011-12-28 3M创新有限公司 卷到卷数字光刻法

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US5691541A (en) 1996-05-14 1997-11-25 The Regents Of The University Of California Maskless, reticle-free, lithography
US6246064B1 (en) * 1997-09-03 2001-06-12 Hitachi, Ltd. Electron beam drawing apparatus
SG124270A1 (en) * 2002-12-16 2006-08-30 Asml Netherlands Bv Lithographic apparatus with alignment subsystem, device manufacturing method using alignment, and alignment structure
JP2005003799A (ja) * 2003-06-10 2005-01-06 Fuji Photo Film Co Ltd 感光性板状部材吸着機構及び画像記録装置
JP4612412B2 (ja) * 2004-08-06 2011-01-12 富士通セミコンダクター株式会社 半導体装置の製造方法
US7102733B2 (en) * 2004-08-13 2006-09-05 Asml Holding N.V. System and method to compensate for static and dynamic misalignments and deformations in a maskless lithography tool
JP2006098727A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 伸縮状態の検出手段を設けた長尺の可撓性記録媒体と、この可撓性記録媒体に伸縮状態を補正して画像を描画可能な描画方法及び装置
JP2006098719A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 露光装置
JP2006098725A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 描画位置の補正方法と、描画位置を補正可能な描画装置
JP4491311B2 (ja) * 2004-09-30 2010-06-30 富士フイルム株式会社 画像記録装置及び画像記録方法
KR20060051977A (ko) * 2004-09-30 2006-05-19 후지 샤신 필름 가부시기가이샤 묘화 방법 및 장치
JP2006235448A (ja) * 2005-02-28 2006-09-07 Fuji Photo Film Co Ltd 画像記録システム、画像記録方法、プログラムおよび画像形成方法
JP2006349945A (ja) * 2005-06-15 2006-12-28 Fujifilm Holdings Corp 露光装置
US7368207B2 (en) 2006-03-31 2008-05-06 Eastman Kodak Company Dynamic compensation system for maskless lithography
US20090042139A1 (en) 2007-04-10 2009-02-12 Nikon Corporation Exposure method and electronic device manufacturing method
JP2010122526A (ja) * 2008-11-20 2010-06-03 Shinko Electric Ind Co Ltd マスクレス露光方法
JP2013045815A (ja) * 2011-08-23 2013-03-04 Nikon Corp 露光方法及びデバイス製造方法
JP5874126B2 (ja) * 2011-08-24 2016-03-02 株式会社ブイ・テクノロジー フィルム露光装置
TWI641915B (zh) * 2012-01-12 2018-11-21 尼康股份有限公司 基板處理裝置、基板處理方法、及圓筒狀光罩

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102301280A (zh) * 2008-12-23 2011-12-28 3M创新有限公司 卷到卷数字光刻法
TW201107897A (en) * 2009-05-20 2011-03-01 Mapper Lithography Ip Bv Pattern data conversion for lithography system

Also Published As

Publication number Publication date
CN106896647B (zh) 2019-05-10
TW201531808A (zh) 2015-08-16
WO2015060983A1 (en) 2015-04-30
US20160238941A1 (en) 2016-08-18
CN106896647A (zh) 2017-06-27
EP3060961A4 (en) 2017-06-28
CN105659166A (zh) 2016-06-08
JP2016535299A (ja) 2016-11-10
US10073350B2 (en) 2018-09-11
EP3060961A1 (en) 2016-08-31
CN105659166B (zh) 2019-01-29
KR20160077116A (ko) 2016-07-01

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